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17 Feb 2003

Volume 82, Issue 7, pp. 1003-1136

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1069 (2003); http://dx.doi.org/10.1063/1.1544428 (3 pages)

M. L. Povinelli, Steven G. Johnson, J. D. Joannopoulos, and J. B. Pendry
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InAs/AlSb quantum cascade lasers operating at 10 μm

K. Ohtani and H. Ohno

Appl. Phys. Lett. 82, 1003 (2003); http://dx.doi.org/10.1063/1.1545151 (3 pages) | Cited 19 times

Online Publication Date: 10 February 2003

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InAs/AlSb intersubband quantum cascade lasers based on bound-to-continuum transitions are fabricated and operation at 10 μm is demonstrated. A spatially indirect intersubband transition together with a double plasmon waveguide structure is employed. Threshold current density is 4.9 kA/cm2 at 4 K. Temperature dependence of the threshold current density is also presented. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Fd III-V semiconductors

Triplet exciton confinement in phosphorescent polymer light-emitting diodes

Fang-Chung Chen, Gufeng He, and Yang Yang

Appl. Phys. Lett. 82, 1006 (2003); http://dx.doi.org/10.1063/1.1544658 (3 pages) | Cited 55 times

Online Publication Date: 10 February 2003

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A series of iridium complexes, with triplet energy levels above or below the triplet level of host polymer, were used to study the flow of excitons between the host and the dopants. The performance of phosphorescent polymer light-emitting diodes has been shown to be sensitive to the triplet energy of the dopant. When the dopant exciton level was higher than that of the host polymer, a “backward excitation energy transfer” occurred; hence, the photoluminescence is quenched and the device performance is poor. When the triplet energy level of the dopant was lower than that of the host polymer, the exciton is confined to the dopant site, and the device shows better performance due to this confinement. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
71.35.-y Excitons and related phenomena

Hole depth- and shape-induced radiation losses in two-dimensional photonic crystals

R. Ferrini, B. Lombardet, B. Wild, R. Houdré, and G.-H. Duan

Appl. Phys. Lett. 82, 1009 (2003); http://dx.doi.org/10.1063/1.1545167 (3 pages) | Cited 20 times

Online Publication Date: 10 February 2003

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A phenomenological model is adopted to study three-dimensional radiation losses in two-dimensional (2D) photonic crystals (PhC) deeply etched in a step-index waveguide. In the case of low vertical refractive index contrast, losses are modeled in a 2D approach and out-of-plane scattering is translated into an effective imaginary index in the air holes. The case of truncated-cone holes is analytically solved. Depth and shape contributions to losses are extracted showing that the verticality of the hole sidewalls is a fundamental parameter. In order to validate the model, the case of a 2D triangular lattice etched through an InP/GaInAsP slab waveguide is studied both theoretically and experimentally. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Cf Surface cleaning, etching, patterning
78.66.Fd III-V semiconductors

Reflectivity of planar metallic fractal patterns

Lei Zhou, Weijia Wen, C. T. Chan, and Ping Sheng

Appl. Phys. Lett. 82, 1012 (2003); http://dx.doi.org/10.1063/1.1553993 (3 pages) | Cited 21 times

Online Publication Date: 10 February 2003

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We studied the reflective properties of a small dielectric plate covered with a fractal-like metallic pattern generated by a particular type of space-filling curves. We found, both experimentally and theoretically, that the plate can reflect electromagnetic waves in a multitude of frequencies, generated from a near-field monopole antenna. Some of the reflected waves have wavelengths much larger than the lateral dimension of the plate. In comparison, a metal plate of the same size failed to reflect when its lateral size was smaller than half of the corresponding wavelength. © 2003 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.Ba Antennas: theory, components and accessories
05.45.Df Fractals
78.70.Gq Microwave and radio-frequency interactions

3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation

Benjamin S. Williams, Hans Callebaut, Sushil Kumar, Qing Hu, and John L. Reno

Appl. Phys. Lett. 82, 1015 (2003); http://dx.doi.org/10.1063/1.1554479 (3 pages) | Cited 148 times

Online Publication Date: 10 February 2003

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We report the development of a quantum cascade laser, at λ = 87.2 μm, corresponding to 3.44 THz or 14.2 meV photon energy. The GaAs/Al0.15Ga0.85As laser structure utilizes longitudinal-optical (LO) phonon scattering for electron depopulation. Laser action is obtained in pulsed mode at temperatures up to 65 K, and at 50% duty cycle up to 29 K. Operating at 5 K in pulsed mode, the threshold current density is 840 A/cm2, and the peak power is approximately 2.5 mW. Based on the relatively high operating temperatures and duty cycles, we propose that direct LO-phonon-based depopulation is a robust method for achieving quantum cascade lasers at long-wavelength THz frequencies. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
63.20.K- Phonon interactions
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.67.De Quantum wells

A way to obtain visible blue light emission in porous silicon

Q. W. Chen, D. L. Zhu, C. Zhu, J. Wang, and Y. G. Zhang

Appl. Phys. Lett. 82, 1018 (2003); http://dx.doi.org/10.1063/1.1554774 (3 pages) | Cited 29 times

Online Publication Date: 10 February 2003

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Strong blue emission around 435 nm from porous silicon (PS) embedded in Pb(Zrx,Ti1−x)O3 (PZT) is realized, which is stable and clearly visible to the naked eye even after exposure in an ambient atmosphere for a year. The sample is obtained by hydrothermal etching of (100)-oriented single crystal silicon wafers in an HF aqueous solution, followed by pulsed laser ablation deposition of a PZT thin layer on the surface of the PS. The electrons and holes excited from silicon nanocrystallites could be separated by the PZT-induced electrostatic field and migrate to the boundaries of PS/PZT along opposite directions, respectively. Therefore, the blue emission is interpreted in terms of the recombination of excited carriers from the silicon nanocrystallites in the interfacial region of PS/PZT. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.60.Fi Electroluminescence
78.55.Ap Elemental semiconductors
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