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24 Feb 2003

Volume 82, Issue 8, pp. 1143-1314

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1152 (2003); http://dx.doi.org/10.1063/1.1555694 (3 pages)

Madanagopal V. Kunnavakkam, F. M. Houlihan, M. Schlax, J. A. Liddle, P. Kolodner, O. Nalamasu, and J. A. Rogers
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Fluid detection with photonic crystal-based multichannel waveguides

J. Topol’ančik, P. Bhattacharya, J. Sabarinathan, and P.-C. Yu

Appl. Phys. Lett. 82, 1143 (2003); http://dx.doi.org/10.1063/1.1554772 (3 pages) | Cited 23 times

Online Publication Date: 20 February 2003

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A simple fluid detection scheme, based on light propagation through linear defect waveguides in photonic crystals, is demonstrated with isopropanol and xylene. The two-channel photonic crystal waveguide sensor is made from a GaAs-based heterostructure. The preferential channeling of light is controlled by the change in the refractive index of the corresponding waveguide branch due to the presence of the inserted fluid in the guide regions only. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
47.85.Np Fluidics
42.79.Gn Optical waveguides and couplers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Femtosecond laser aperturless near-field nanomachining of metals assisted by scanning probe microscopy

A. Chimmalgi, T. Y. Choi, C. P. Grigoropoulos, and K. Komvopoulos

Appl. Phys. Lett. 82, 1146 (2003); http://dx.doi.org/10.1063/1.1555693 (3 pages) | Cited 55 times

Online Publication Date: 20 February 2003

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Ultrashort pulsed-laser radiation is an effective method for precision materials processing and surface nano-/micromodification because of minimal thermal and mechanical damage. This study demonstrates that controllable surface nanomachining can be achieved by femtosecond laser pulses through local field enhancement in the near-field of a sharp probe tip. Nanomachining of thin gold films was accomplished by coupling 800-nm femtosecond laser radiation with a silicon tip in ambient air. Finite-difference time-domain numerical predictions of the spatial distribution of the laser field intensity beneath the tip confirmed that the observed high spatial resolution is due to the enhancement of the local electric field. Possible structuring mechanisms and factors affecting this process are discussed. The present process provides an intriguing means for massive nanofabrication due to the flexibility in the substrate material selection, high spatial resolution of ∼10 nm (not possible with standard nanomachining techniques), and fast processing rates achievable through simultaneous irradiation of multiarray tips. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Ta Atom manipulation
42.62.Cf Industrial applications
07.10.Cm Micromechanical devices and systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
02.70.Bf Finite-difference methods
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
81.20.Wk Machining, milling
81.65.Ps Polishing, grinding, surface finishing

High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm

S. A. Choulis, A. Andreev, M. Merrick, A. R. Adams, B. N. Murdin, A. Krier, and V. V. Sherstnev

Appl. Phys. Lett. 82, 1149 (2003); http://dx.doi.org/10.1063/1.1555276 (3 pages) | Cited 2 times

Online Publication Date: 20 February 2003

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The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
62.50.-p High-pressure effects in solids and liquids

Low-cost, low-loss microlens arrays fabricated by soft-lithography replication process

Madanagopal V. Kunnavakkam, F. M. Houlihan, M. Schlax, J. A. Liddle, P. Kolodner, O. Nalamasu, and J. A. Rogers

Appl. Phys. Lett. 82, 1152 (2003); http://dx.doi.org/10.1063/1.1555694 (3 pages) | Cited 58 times

Online Publication Date: 20 February 2003

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This letter describes a soft lithographic approach for fabricating low-cost, low-loss microlens arrays. An accurate negative reproduction (stamp) of an existing high-quality lens surface (master) is made by thermally curing a prepolymer to a silicone elastomer against the master. Fabricating the stamp on a rigid backing plate minimizes distortion of its surface relief. Dispensing a liquid photocurable epoxy loaded to high weight percent with functionalized silica nanoparticles into the features of relief on the mold and then curing this material with UV radiation against a quartz substrate generates a replica lens array. The physical and optical characteristics of the resulting lenses suggest that the approach will be suitable for a range of applications in micro and integrated optics. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Bh Lenses, prisms and mirrors
42.70.Jk Polymers and organics
42.82.Et Waveguides, couplers, and arrays
82.35.Ej Nonlinear optics with polymers
82.50.Hp Processes caused by visible and UV light

Direct observation of nonlinear effects in a one-dimensional photonic crystal

Hideyuki Inouye and Yoshihiko Kanemitsu

Appl. Phys. Lett. 82, 1155 (2003); http://dx.doi.org/10.1063/1.1556171 (3 pages) | Cited 14 times

Online Publication Date: 20 February 2003

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A total-reflection one-dimensional photonic crystal with a gold nanoparticles dispersed layer as a defect structure is fabricated and defect mode shifts induced by strong localization of light are demonstrated. It is found that the defect mode shift can be attributed to the Kerr effect inside the defect structure. Nonlinear optical effects inside the photonic crystal with the defect structure are also discussed. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Simulations of nanometric optical circuits based on surface plasmon polariton gap waveguide

Kazuo Tanaka and Masahiro Tanaka

Appl. Phys. Lett. 82, 1158 (2003); http://dx.doi.org/10.1063/1.1557323 (3 pages) | Cited 124 times

Online Publication Date: 20 February 2003

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Nanometric optical waveguides can be made by using the dependence of surface plasmon polaritons on the gap-width between two parallel metallic plates. This waveguide can be called surface plasmon polariton gap waveguide (SPGW). The H-plane and E-plane optical circuits that consist of SPGWs have been considered. Three-dimensional numerical simulations have been performed for the nanometric optical circuits that consist of straight and branched bend SPGWs. Results show that optical circuits considered in this letter can perform guiding, branching, and bending functions of optical waves in the nanometric device. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Integrated optic broadband duplexer made by ion exchange

E. Ghibaudo, J.-E. Broquin, and P. Benech

Appl. Phys. Lett. 82, 1161 (2003); http://dx.doi.org/10.1063/1.1556961 (3 pages) | Cited 2 times

Online Publication Date: 20 February 2003

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The development of optical amplification and bidirectional traffic in local and wide area networks requires broadband multiplexers which are able to treat the signal of an entire telecommunication window. A device made by ion exchange and answering to these needs is proposed in this letter. Its working principle, based on a leaky structure is first explained. An experimental result confirming a good broadband spectral behavior is then presented. Its spectral response displays two duplexing bands of at least 100 nm. © 2003 American Institute of Physics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes
42.86.+b Optical workshop techniques
42.81.Uv Fiber networks

Anomalous power and spectrum dependence of terahertz radiation from femtosecond-laser-irradiated indium arsenide in high magnetic fields up to 14 T

Hideyuki Ohtake, Hidetoshi Murakami, Takayuki Yano, Shingo Ono, Nobuhiko Sarukura, Hiroshi Takahashi, Yuji Suzuki, Gen Nishijima, and Kazuo Watanabe

Appl. Phys. Lett. 82, 1164 (2003); http://dx.doi.org/10.1063/1.1556963 (3 pages) | Cited 5 times

Online Publication Date: 20 February 2003

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We report on the terahertz radiation from femtosecond-laser-irradiated indium arsenide in high magnetic fields up to 14 T. It is found that the radiation power exhibits anomalous magnetic-field dependence, including saturation, decrease, and recovery up to 14 T. Moreover, the radiation spectrum possesses a clear periodic structure over 6 T. © 2003 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Quasi-phase-matched difference frequency generation (8–13 μm) in an isotropic semiconductor using total reflection

R. Haïdar, Ph. Kupecek, E. Rosencher, R. Triboulet, and Ph. Lemasson

Appl. Phys. Lett. 82, 1167 (2003); http://dx.doi.org/10.1063/1.1557326 (3 pages) | Cited 4 times

Online Publication Date: 20 February 2003

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We report on the quasi-phase-matched difference frequency generation in an isotropic semiconductor (zinc selenide) using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler outputs of an optical parametric oscillator. Large tunability (between 8 and 13 μm) is demonstrated. Agreement between theoretical expectation and experimental results is excellent. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Yj Optical parametric oscillators and amplifiers
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In situ measurements of GaN nucleation layer decompostion

D. D. Koleske, M. E. Coltrin, A. A. Allerman, K. C. Cross, C. C. Mitchell, and J. J. Figiel

Appl. Phys. Lett. 82, 1170 (2003); http://dx.doi.org/10.1063/1.1555264 (3 pages) | Cited 8 times

Online Publication Date: 20 February 2003

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GaN nucleation layer (NL) decomposition was measured using optical reflectance over a wide range of pressure P, temperature T, and H2/NH3 gas mixture. The GaN NLs show measurable decomposition above 800 °C and do not significantly roughen until above 960 °C. The NL decomposition rates increase with increasing P, increasing T, and decreasing NH3 flow. An activation energy EA of 2.68 eV was measured (from 820 to 960 °C) for NL decomposition and an EA of 2.62 eV was measured (from 900 to 1075 °C) for decomposition of thick, high-T bulk GaN films. Depending on P, the pre-exponential factor A0 was four to nine times larger for NL decomposition compared to bulk GaN decomposition. The EA measured for both NL and bulk GaN decomposition in mixed H2 and NH3 flows is similar to the EA for Ga desorption, suggesting that the rate-limiting step for both NL and bulk GaN decomposition is Ga desorption. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.47.Fg Semiconductor surfaces
78.66.Fd III-V semiconductors
68.43.Mn Adsorption kinetics
78.68.+m Optical properties of surfaces

Implantation site of rare earths in single-crystalline ZnO

U. Wahl, E. Rita, J. G. Correia, E. Alves, J. P. Araújo, and The ISOLDE Collaboration

Appl. Phys. Lett. 82, 1173 (2003); http://dx.doi.org/10.1063/1.1555283 (3 pages) | Cited 15 times

Online Publication Date: 20 February 2003

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The lattice location of rare-earth 167mEr in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV, room-temperature implantation of the precursor isotope 167Tm at doses of 1.3–2.8×1013 cm−2 and annealing up to 900 °C, the angular distribution of conversion electrons emitted by the radioactive isotope 167mEr was measured by a position-sensitive electron detector. The conversion electron emission patterns from 167mEr around the [0001], [1102], [1101], and [2113] directions give direct evidence that the large majority of Er atoms (75%–90%) occupies substitutional Zn sites. © 2003 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Cc Kinetics of defect formation and annealing

Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices

B. Dietrich, V. Bukalo, A. Fischer, K. F. Dombrowski, E. Bugiel, B. Kuck, and H. H. Richter

Appl. Phys. Lett. 82, 1176 (2003); http://dx.doi.org/10.1063/1.1555692 (3 pages) | Cited 6 times

Online Publication Date: 20 February 2003

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We present the deconvolution of measurements of inhomogeneous mechanical stress in silicon device structures obtained by UV micro-Raman spectroscopy. Due to the very small UV penetration depth of only 12 nm, averaging of stress over the depth is almost eliminated. Only the averaging of stress over the area of the laser spot remains. By deconvolution of the spectra and comparison with finite element simulations, it is now possible to extract information on mechanical stress from areas as small as 200 nm. Oppositely stressed regions in submicroscopic dimensions can be detected, which could not be detected in previous visible light measurements due to averaging. © 2003 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
78.66.Db Elemental semiconductors and insulators
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Direct measurements of grain boundary sliding in yttrium-doped alumina bicrystals

K. Matsunaga, H. Nishimura, H. Muto, T. Yamamoto, and Y. Ikuhara

Appl. Phys. Lett. 82, 1179 (2003); http://dx.doi.org/10.1063/1.1555690 (3 pages) | Cited 24 times

Online Publication Date: 20 February 2003

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The behavior of grain boundary sliding in pure and yttrium-doped Al2O3 was directly measured at a high temperature, using bicrystal experiments. For this purpose, we fabricated Al2O3 bicrystals containing a random grain boundary with or without yttrium ions. High-resolution transmission electron microscopy observations and energy dispersive x-ray spectroscopy analyses showed that bicrystals were successfully joined at an atomic scale, and doped yttrium ions segregated along the grain boundaries. It was found by compressive creep tests that the grain boundary sliding rate was restrained by two orders of magnitude due to yttrium addition, as compared to that of undoped bicrystals. © 2003 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
68.35.Dv Composition, segregation; defects and impurities
81.40.Lm Deformation, plasticity, and creep
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
62.20.Hg Creep
68.37.Lp Transmission electron microscopy (TEM)
61.72.S- Impurities in crystals

Origin of the efficient light emission from inversion domain boundaries in GaN

Vincenzo Fiorentini

Appl. Phys. Lett. 82, 1182 (2003); http://dx.doi.org/10.1063/1.1554776 (3 pages) | Cited 9 times

Online Publication Date: 20 February 2003

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Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.-m Methods of electronic structure calculations
73.40.Ei Rectification

CoSi2 surface phase separation into self-assembled lateral multilayers

I. Goldfarb

Appl. Phys. Lett. 82, 1185 (2003); http://dx.doi.org/10.1063/1.1556169 (3 pages)

Online Publication Date: 20 February 2003

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CoSi2 was grown on the Si(001) surface by solid-phase reaction. Its transformation from elemental Co/Si(001) was complete after a 700 °C anneal, as followed from the reflection high-energy electron diffraction analysis. Scanning tunneling microscopy observations of the resulting surface revealed a variety of atomic reconstructions, some apparent only under bias-dependent imaging conditions. Particularly striking was the appearance of alternating (3√2×2√2)-R45° and (4√2×2√2)-R45° surface domains arranged in long parallel stripes. Plausible reasons for such a phase separation are discussed. © 2003 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Blueshifted Kerr effects and enhanced reflectivity in nanocrystalline CoFe2−xAlxO4 thin films

Biao Zhou, Ya-Wen Zhang, Chun-Sheng Liao, Yue-Jun Yu, Chun-Hua Yan, Liang-Yao Chen, and Song-You Wang

Appl. Phys. Lett. 82, 1188 (2003); http://dx.doi.org/10.1063/1.1556172 (3 pages) | Cited 3 times

Online Publication Date: 20 February 2003

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The doping effects of Al3+ on the microstructure, magnetism, polar magneto-optical Kerr effects, and optical property of the sol-gel derived nanocrystalline CoFe2−xAlxO4 (x = 0–1.0) thin films on silicon substrate were investigated. Doping of Al3+ not only led to the existence of two Kerr rotation peaks at 620 and 550 nm associated with the crystal-field transition, but also aroused the blueshifting of another peak at 540 nm correlated with the intervalence charge transfer transition. On the other hand, the reflectivity of as-deposited films increased with the Al3+ content x (except x = 0.2) due to the decreased light scatter and absorptivity of Al3+ in substitution of Fe3+. Both the blueshifted Kerr effects and enhanced reflectivity in these films are of much benefit to magneto-optical recording. © 2003 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Ss Magnetic recording materials
75.70.Ak Magnetic properties of monolayers and thin films
78.20.Ls Magneto-optical effects
75.50.Gg Ferrimagnetics
68.55.-a Thin film structure and morphology
75.10.Dg Crystal-field theory and spin Hamiltonians
75.10.Lp Band and itinerant models
78.40.Ha Other nonmetallic inorganics
78.66.Vs Fine-particle systems

Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

P. Offermans, P. M. Koenraad, J. H. Wolter, J. D. Song, Jong Min Kim, Seong Ju Bae, and Yong Tak Lee

Appl. Phys. Lett. 82, 1191 (2003); http://dx.doi.org/10.1063/1.1555265 (3 pages) | Cited 1 time

Online Publication Date: 20 February 2003

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We have investigated the structural properties of as-grown and annealed (750 and 800 °C) digital alloy InGaAlAs (λ = 1.3 μm) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 °C annealed sample. The 800 °C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 °C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 °C annealed samples was the same. Annealing at 800 °C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness

Physical and electronic structure of p-sexiphenyl on Au(111)

C. B. France and B. A. Parkinson

Appl. Phys. Lett. 82, 1194 (2003); http://dx.doi.org/10.1063/1.1554766 (3 pages) | Cited 18 times

Online Publication Date: 20 February 2003

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The electronic structure, adsorption energies, and molecular ordering of p-sexiphenyl (p-6P) films on Au(111) have been investigated with ultraviolet photoemission spectroscopy, temperature programmed desorption (TPD), and scanning tunneling microscopy (STM). Films up to 50 Å of p-6P were studied and a substantial interface dipole was measured (0.73 eV). Two distinct p-6P binding environments with heats of adsorption of 126 and 143 kJ/mol were observed using TPD. An unusual surface structure that contains alternating face and edge-on p-6P molecules was observed using STM. A model similar to the bulk p-6P structure with alternating face and edge-on interactions is proposed. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.47.Fg Semiconductor surfaces
68.43.Vx Thermal desorption
79.60.Dp Adsorbed layers and thin films
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
85.65.+h Molecular electronic devices
68.55.-a Thin film structure and morphology

Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Byung-Eun Park and Hiroshi Ishiwara

Appl. Phys. Lett. 82, 1197 (2003); http://dx.doi.org/10.1063/1.1556966 (3 pages) | Cited 70 times

Online Publication Date: 20 February 2003

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Lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates by a molecular beam deposition method with an electron beam gun and annealed typically in N2 atmosphere at 800 °C for 1 min. Reflection high-energy electron diffraction observation as well as x-ray diffraction analysis showed that the crystalline quality of the LaAlO3 films was amorphous, even after annealing at 800 °C. It was also found from x-ray fluorescence measurements that the ratio of La-to-Al for LaAlO3 films was almost 1:1. The dielectric constant of LaAlO3 films was estimated to be 20–25 and the leakage current density was improved by about eight orders of magnitude in maximum after the annealing process. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.43.Er Other amorphous solids
77.22.Ch Permittivity (dielectric function)

Effects of Zn addition and thermal annealing on yield phenomena of CdTe and Cd0.96Zn0.04Te single crystals by nanoindentation

M. Pang, D. F. Bahr, and K. G. Lynn

Appl. Phys. Lett. 82, 1200 (2003); http://dx.doi.org/10.1063/1.1556573 (3 pages) | Cited 11 times

Online Publication Date: 20 February 2003

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Mechanical yield phenomena in CdTe and CdZnTe single crystals for use as radiation detectors were studied by nanoindentation, since dislocations can act as electrically active levels that would impact device performance. The initial deformation behavior prior to yielding is elastic for as-grown crystals, indicating that rapid dislocation nucleation is the controlling mechanism for the observed yield point. Zn doping increases the stress required for initiating plastic deformation from 0.76 GPa in CdTe to 1.29 GPa in CdZnTe, and increases the flow stress of the material from solid solution hardening. Thermal annealing leads to plastic loading at very low loads, suggesting that annealing CdZnTe generates a low but increased density of dislocations in the bulk material. © 2003 American Institute of Physics.
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62.20.F- Deformation and plasticity
62.20.M- Structural failure of materials
61.72.Cc Kinetics of defect formation and annealing
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Electroreflectance of hexagonal gallium nitride at the fundamental and E1 spectral regions

M. F. Al-Kuhaili, R. Glosser, A. E. Wickenden, D. D. Koleske, and R. L. Henry

Appl. Phys. Lett. 82, 1203 (2003); http://dx.doi.org/10.1063/1.1556964 (3 pages)

Online Publication Date: 20 February 2003

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We have measured the room-temperature electroreflectance (ER) of hexagonal gallium nitride. Our measurements were obtained at the fundamental optical gap and at the E1 critical point regions. The measurements were performed using front contact ER. In the fundamental region, the ER spectra were found to be of excitonic nature and in the low field regime. In the E1 region, the ER spectra were also in the low field regime, but were fitted with two-dimensional critical points. © 2003 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers

Sh. U. Yuldashev, Hyunsik Im, V. Sh. Yalishev, C. S. Park, T. W. Kang, Sanghoon Lee, Y. Sasaki, X. Liu, and J. K. Furdyna

Appl. Phys. Lett. 82, 1206 (2003); http://dx.doi.org/10.1063/1.1554482 (3 pages) | Cited 28 times

Online Publication Date: 20 February 2003

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We have investigated the effect of additional doping by Be on the properties of Ga1−xMnxAs (x = 0.03). For this relatively low value of x, the Curie temperature is observed to increase with increasing Be concentration. We show that the temperature dependence of the resistivity at zero magnetic field, including the resistivity maximum near the Curie temperature, can be successfully described by the magnetoimpurity scattering model proposed by Nagaev [Phys. Rep. 346, 387 (2001)] in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the data in terms of this model yields the value of the p–d exchange energy ∣N0β∣ ≈ 1.6 eV for Ga0.97Mn0.03As. © 2003 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
73.61.Ey III-V semiconductors
75.30.Hx Magnetic impurity interactions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Et Exchange and superexchange interactions

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

I. Hapke-Wurst, U. Zeitler, U. F. Keyser, R. J. Haug, K. Pierz, and Z. Ma

Appl. Phys. Lett. 82, 1209 (2003); http://dx.doi.org/10.1063/1.1555712 (3 pages) | Cited 6 times

Online Publication Date: 20 February 2003

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We investigated the size dependence of the ground-state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current–voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples. © 2003 American Institute of Physics.
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73.63.Kv Quantum dots
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
73.21.La Quantum dots
78.67.Hc Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
68.37.Ps Atomic force microscopy (AFM)
85.35.Gv Single electron devices
73.23.-b Electronic transport in mesoscopic systems

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, A. Nylandsted Larsen, N. Cherkashin, A. Claverie, P. Normand, E. Kapelanakis, D. Skarlatos, and D. Tsoukalas

Appl. Phys. Lett. 82, 1212 (2003); http://dx.doi.org/10.1063/1.1555709 (3 pages) | Cited 63 times

Online Publication Date: 20 February 2003

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A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO2 on top of a p-(001)Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid thermal processing and characterized structurally and electrically. The average size of the Ge nanodots was estimated to be 4.5 nm with an average aerial density of 3×1011 cm−2, situated at 4.4 nm in average away from the Si/SiO2 interface. Significant charge storage effects were observed through capacitance–voltage measurements of metal–oxide–semiconductor capacitors. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
73.63.Kv Quantum dots
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Large conductance switching and memory effects in organic molecules for data-storage applications

Anirban Bandyopadhyay and Amlan J. Pal

Appl. Phys. Lett. 82, 1215 (2003); http://dx.doi.org/10.1063/1.1555263 (3 pages) | Cited 72 times

Online Publication Date: 20 February 2003

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We have observed a large electrical conductance switching (ON:OFF ratio = 105) in single-layer sandwich structures based on organic molecules at room temperature. The switching devices showed an associated memory effect for data-storage applications. We could write or erase a state and read it for many cycles. In switching devices, the active semiconductor retained its high conducting state until a reverse voltage erased it. A high conducting state arose due to restoration of conjugation in the molecule via electroreduction. Such a high ON–OFF ratio in a single layer sandwich structure, as compared to contemporary switching devices, is due to low off-state leakage current. The concept of conjugation restoration has been verified in supramolecular structures by adding donor groups to the molecule, which resulted in increased off-state current and hence lower ON–OFF ratio. Our work set a generalized example of selecting organic molecules to obtain higher ON–OFF ratio in molecular switching devices. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
72.60.+g Mixed conductivity and conductivity transitions
73.61.Ph Polymers; organic compounds
84.32.Dd Connectors, relays, and switches
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