APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

24 Feb 2003

Volume 82, Issue 8, pp. 1143-1314

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1152 (2003); http://dx.doi.org/10.1063/1.1555694 (3 pages)

Madanagopal V. Kunnavakkam, F. M. Houlihan, M. Schlax, J. A. Liddle, P. Kolodner, O. Nalamasu, and J. A. Rogers
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

In situ measurements of GaN nucleation layer decompostion

D. D. Koleske, M. E. Coltrin, A. A. Allerman, K. C. Cross, C. C. Mitchell, and J. J. Figiel

Appl. Phys. Lett. 82, 1170 (2003); http://dx.doi.org/10.1063/1.1555264 (3 pages) | Cited 8 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaN nucleation layer (NL) decomposition was measured using optical reflectance over a wide range of pressure P, temperature T, and H2/NH3 gas mixture. The GaN NLs show measurable decomposition above 800 °C and do not significantly roughen until above 960 °C. The NL decomposition rates increase with increasing P, increasing T, and decreasing NH3 flow. An activation energy EA of 2.68 eV was measured (from 820 to 960 °C) for NL decomposition and an EA of 2.62 eV was measured (from 900 to 1075 °C) for decomposition of thick, high-T bulk GaN films. Depending on P, the pre-exponential factor A0 was four to nine times larger for NL decomposition compared to bulk GaN decomposition. The EA measured for both NL and bulk GaN decomposition in mixed H2 and NH3 flows is similar to the EA for Ga desorption, suggesting that the rate-limiting step for both NL and bulk GaN decomposition is Ga desorption. © 2003 American Institute of Physics.
Show PACS
68.55.A- Nucleation and growth
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.47.Fg Semiconductor surfaces
78.66.Fd III-V semiconductors
68.43.Mn Adsorption kinetics
78.68.+m Optical properties of surfaces

Implantation site of rare earths in single-crystalline ZnO

U. Wahl, E. Rita, J. G. Correia, E. Alves, J. P. Araújo, and The ISOLDE Collaboration

Appl. Phys. Lett. 82, 1173 (2003); http://dx.doi.org/10.1063/1.1555283 (3 pages) | Cited 15 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The lattice location of rare-earth 167mEr in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV, room-temperature implantation of the precursor isotope 167Tm at doses of 1.3–2.8×1013 cm−2 and annealing up to 900 °C, the angular distribution of conversion electrons emitted by the radioactive isotope 167mEr was measured by a position-sensitive electron detector. The conversion electron emission patterns from 167mEr around the [0001], [1102], [1101], and [2113] directions give direct evidence that the large majority of Er atoms (75%–90%) occupies substitutional Zn sites. © 2003 American Institute of Physics.
Show PACS
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Cc Kinetics of defect formation and annealing

Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices

B. Dietrich, V. Bukalo, A. Fischer, K. F. Dombrowski, E. Bugiel, B. Kuck, and H. H. Richter

Appl. Phys. Lett. 82, 1176 (2003); http://dx.doi.org/10.1063/1.1555692 (3 pages) | Cited 6 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present the deconvolution of measurements of inhomogeneous mechanical stress in silicon device structures obtained by UV micro-Raman spectroscopy. Due to the very small UV penetration depth of only 12 nm, averaging of stress over the depth is almost eliminated. Only the averaging of stress over the area of the laser spot remains. By deconvolution of the spectra and comparison with finite element simulations, it is now possible to extract information on mechanical stress from areas as small as 200 nm. Oppositely stressed regions in submicroscopic dimensions can be detected, which could not be detected in previous visible light measurements due to averaging. © 2003 American Institute of Physics.
Show PACS
78.30.Am Elemental semiconductors and insulators
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
78.66.Db Elemental semiconductors and insulators
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Direct measurements of grain boundary sliding in yttrium-doped alumina bicrystals

K. Matsunaga, H. Nishimura, H. Muto, T. Yamamoto, and Y. Ikuhara

Appl. Phys. Lett. 82, 1179 (2003); http://dx.doi.org/10.1063/1.1555690 (3 pages) | Cited 24 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The behavior of grain boundary sliding in pure and yttrium-doped Al2O3 was directly measured at a high temperature, using bicrystal experiments. For this purpose, we fabricated Al2O3 bicrystals containing a random grain boundary with or without yttrium ions. High-resolution transmission electron microscopy observations and energy dispersive x-ray spectroscopy analyses showed that bicrystals were successfully joined at an atomic scale, and doped yttrium ions segregated along the grain boundaries. It was found by compressive creep tests that the grain boundary sliding rate was restrained by two orders of magnitude due to yttrium addition, as compared to that of undoped bicrystals. © 2003 American Institute of Physics.
Show PACS
61.72.Mm Grain and twin boundaries
68.35.Dv Composition, segregation; defects and impurities
81.40.Lm Deformation, plasticity, and creep
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
62.20.Hg Creep
68.37.Lp Transmission electron microscopy (TEM)
61.72.S- Impurities in crystals

Origin of the efficient light emission from inversion domain boundaries in GaN

Vincenzo Fiorentini

Appl. Phys. Lett. 82, 1182 (2003); http://dx.doi.org/10.1063/1.1554776 (3 pages) | Cited 9 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces. © 2003 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.-m Methods of electronic structure calculations
73.40.Ei Rectification

CoSi2 surface phase separation into self-assembled lateral multilayers

I. Goldfarb

Appl. Phys. Lett. 82, 1185 (2003); http://dx.doi.org/10.1063/1.1556169 (3 pages)

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
CoSi2 was grown on the Si(001) surface by solid-phase reaction. Its transformation from elemental Co/Si(001) was complete after a 700 °C anneal, as followed from the reflection high-energy electron diffraction analysis. Scanning tunneling microscopy observations of the resulting surface revealed a variety of atomic reconstructions, some apparent only under bias-dependent imaging conditions. Particularly striking was the appearance of alternating (3√2×2√2)-R45° and (4√2×2√2)-R45° surface domains arranged in long parallel stripes. Plausible reasons for such a phase separation are discussed. © 2003 American Institute of Physics.
Show PACS
68.35.Dv Composition, segregation; defects and impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Blueshifted Kerr effects and enhanced reflectivity in nanocrystalline CoFe2−xAlxO4 thin films

Biao Zhou, Ya-Wen Zhang, Chun-Sheng Liao, Yue-Jun Yu, Chun-Hua Yan, Liang-Yao Chen, and Song-You Wang

Appl. Phys. Lett. 82, 1188 (2003); http://dx.doi.org/10.1063/1.1556172 (3 pages) | Cited 3 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The doping effects of Al3+ on the microstructure, magnetism, polar magneto-optical Kerr effects, and optical property of the sol-gel derived nanocrystalline CoFe2−xAlxO4 (x = 0–1.0) thin films on silicon substrate were investigated. Doping of Al3+ not only led to the existence of two Kerr rotation peaks at 620 and 550 nm associated with the crystal-field transition, but also aroused the blueshifting of another peak at 540 nm correlated with the intervalence charge transfer transition. On the other hand, the reflectivity of as-deposited films increased with the Al3+ content x (except x = 0.2) due to the decreased light scatter and absorptivity of Al3+ in substitution of Fe3+. Both the blueshifted Kerr effects and enhanced reflectivity in these films are of much benefit to magneto-optical recording. © 2003 American Institute of Physics.
Show PACS
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Ss Magnetic recording materials
75.70.Ak Magnetic properties of monolayers and thin films
78.20.Ls Magneto-optical effects
75.50.Gg Ferrimagnetics
68.55.-a Thin film structure and morphology
75.10.Dg Crystal-field theory and spin Hamiltonians
75.10.Lp Band and itinerant models
78.40.Ha Other nonmetallic inorganics
78.66.Vs Fine-particle systems

Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

P. Offermans, P. M. Koenraad, J. H. Wolter, J. D. Song, Jong Min Kim, Seong Ju Bae, and Yong Tak Lee

Appl. Phys. Lett. 82, 1191 (2003); http://dx.doi.org/10.1063/1.1555265 (3 pages) | Cited 1 time

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the structural properties of as-grown and annealed (750 and 800 °C) digital alloy InGaAlAs (λ = 1.3 μm) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 °C annealed sample. The 800 °C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 °C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 °C annealed samples was the same. Annealing at 800 °C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys. © 2003 American Institute of Physics.
Show PACS
68.65.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness

Physical and electronic structure of p-sexiphenyl on Au(111)

C. B. France and B. A. Parkinson

Appl. Phys. Lett. 82, 1194 (2003); http://dx.doi.org/10.1063/1.1554766 (3 pages) | Cited 18 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic structure, adsorption energies, and molecular ordering of p-sexiphenyl (p-6P) films on Au(111) have been investigated with ultraviolet photoemission spectroscopy, temperature programmed desorption (TPD), and scanning tunneling microscopy (STM). Films up to 50 Å of p-6P were studied and a substantial interface dipole was measured (0.73 eV). Two distinct p-6P binding environments with heats of adsorption of 126 and 143 kJ/mol were observed using TPD. An unusual surface structure that contains alternating face and edge-on p-6P molecules was observed using STM. A model similar to the bulk p-6P structure with alternating face and edge-on interactions is proposed. © 2003 American Institute of Physics.
Show PACS
68.35.Ct Interface structure and roughness
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.47.Fg Semiconductor surfaces
68.43.Vx Thermal desorption
79.60.Dp Adsorbed layers and thin films
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
85.65.+h Molecular electronic devices
68.55.-a Thin film structure and morphology

Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Byung-Eun Park and Hiroshi Ishiwara

Appl. Phys. Lett. 82, 1197 (2003); http://dx.doi.org/10.1063/1.1556966 (3 pages) | Cited 70 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates by a molecular beam deposition method with an electron beam gun and annealed typically in N2 atmosphere at 800 °C for 1 min. Reflection high-energy electron diffraction observation as well as x-ray diffraction analysis showed that the crystalline quality of the LaAlO3 films was amorphous, even after annealing at 800 °C. It was also found from x-ray fluorescence measurements that the ratio of La-to-Al for LaAlO3 films was almost 1:1. The dielectric constant of LaAlO3 films was estimated to be 20–25 and the leakage current density was improved by about eight orders of magnitude in maximum after the annealing process. © 2003 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.43.Er Other amorphous solids
77.22.Ch Permittivity (dielectric function)

Effects of Zn addition and thermal annealing on yield phenomena of CdTe and Cd0.96Zn0.04Te single crystals by nanoindentation

M. Pang, D. F. Bahr, and K. G. Lynn

Appl. Phys. Lett. 82, 1200 (2003); http://dx.doi.org/10.1063/1.1556573 (3 pages) | Cited 11 times

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Mechanical yield phenomena in CdTe and CdZnTe single crystals for use as radiation detectors were studied by nanoindentation, since dislocations can act as electrically active levels that would impact device performance. The initial deformation behavior prior to yielding is elastic for as-grown crystals, indicating that rapid dislocation nucleation is the controlling mechanism for the observed yield point. Zn doping increases the stress required for initiating plastic deformation from 0.76 GPa in CdTe to 1.29 GPa in CdZnTe, and increases the flow stress of the material from solid solution hardening. Thermal annealing leads to plastic loading at very low loads, suggesting that annealing CdZnTe generates a low but increased density of dislocations in the bulk material. © 2003 American Institute of Physics.
Show PACS
62.20.F- Deformation and plasticity
62.20.M- Structural failure of materials
61.72.Cc Kinetics of defect formation and annealing
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Electroreflectance of hexagonal gallium nitride at the fundamental and E1 spectral regions

M. F. Al-Kuhaili, R. Glosser, A. E. Wickenden, D. D. Koleske, and R. L. Henry

Appl. Phys. Lett. 82, 1203 (2003); http://dx.doi.org/10.1063/1.1556964 (3 pages)

Online Publication Date: 20 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have measured the room-temperature electroreflectance (ER) of hexagonal gallium nitride. Our measurements were obtained at the fundamental optical gap and at the E1 critical point regions. The measurements were performed using front contact ER. In the fundamental region, the ER spectra were found to be of excitonic nature and in the low field regime. In the E1 region, the ER spectra were also in the low field regime, but were fitted with two-dimensional critical points. © 2003 American Institute of Physics.
Show PACS
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close