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3 Mar 2003

Volume 82, Issue 9, pp. 1323-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1437 (2003); http://dx.doi.org/10.1063/1.1556958 (3 pages)

T. K. Yamada, M. M. J. Bischoff, T. Mizoguchi, and H. van Kempen
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Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, and M. Holtz

Appl. Phys. Lett. 82, 1323 (2003); http://dx.doi.org/10.1063/1.1557325 (3 pages) | Cited 9 times

Online Publication Date: 25 February 2003

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We describe solar-blind photodetectors based on superlattices of AlN/AlGa(In)N. The superlattices have a period of 1.4 nm, determined by x-ray diffraction, and an effective band gap of 260 nm measured by optical reflectivity. Using simple mesa diodes, without surface passivation, we obtain low dark leakage currents of 0.2–0.3 pA, corresponding to the leakage current density of ∼0.3 nA/cm2, and high zero-bias resistance of ∼ 1×1011 Ω. Excellent visible cutoff is obtained for these devices, with six orders of magnitude decrease in responsivity from 260 to 380 nm. These results demonstrate the potential of junctions formed by short-period superlattices in large-band-gap devices. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

GaN-based waveguide devices for long-wavelength optical communications

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 82, 1326 (2003); http://dx.doi.org/10.1063/1.1557790 (3 pages) | Cited 26 times

Online Publication Date: 25 February 2003

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Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.81.Qb Fiber waveguides, couplers, and arrays
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors

Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices

M. H. M. Reddy, D. A. Buell, A. S. Huntington, T. Asano, R. Koda, D. Feezell, D. Lofgreen, and L. A. Coldren

Appl. Phys. Lett. 82, 1329 (2003); http://dx.doi.org/10.1063/1.1554485 (3 pages) | Cited 5 times

Online Publication Date: 25 February 2003

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We report a lateral oxide-confinement layer for InP-based devices using lattice-matched AlGaAsSb. The confinement-layer-induced excess loss at different widths was extracted after de-embedding the losses due to carrier diffusion, nonradiative recombination, and changes in internal injection efficiency. The results show that AlGaAsSb oxide acts as an excellent confinement layer, and shows no excess loss down to a width of 4 μm. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Single-mode tapered waveguide laser in Er-doped glass with multimode-diode pumping

Pratheepan Madasamy, S. Honkanen, D. F. Geraghty, and N. Peyghambarian

Appl. Phys. Lett. 82, 1332 (2003); http://dx.doi.org/10.1063/1.1557771 (3 pages) | Cited 18 times

Online Publication Date: 25 February 2003

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We report on a demonstration of a planar waveguide laser configuration for single-mode operation around 1550 nm using cost-effective multimode diode pumping. The laser was fabricated by Ag film ion exchange in a hybrid phosphate glass which has active and passive regions monolithically integrated in a single glass chip. Power of 54 mW at 1538 nm was measured from the single-mode output waveguide. © 2003 American Institute of Physics.
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42.55.Xi Diode-pumped lasers
42.55.Rz Doped-insulator lasers and other solid state lasers
42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.70.Ce Glasses, quartz
42.86.+b Optical workshop techniques

Widely tunable L-band erbium-doped fiber laser with fiber Bragg gratings based on optical bistability

Qinghe Mao and John W. Y. Lit

Appl. Phys. Lett. 82, 1335 (2003); http://dx.doi.org/10.1063/1.1557321 (3 pages) | Cited 15 times

Online Publication Date: 25 February 2003

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We propose and demonstrate a mechanism to widely tune L-band erbium-doped fiber lasers with ordinary commercial tunable fiber Bragg gratings. The function is based on the dual-wavelength bistability in linear overlapping laser cavities. The laser may be switched between two wavelengths located, respectively, in the short- and long-wavelength regions of the L-band by triggering the pump with a typical switching time of about 11 ms. The two wavelengths can be independently tuned to give the laser a total tuning range of 33 nm and an output dynamic range of 7 dB. Nearly constant output powers with high optical signal-to-noise ratios are achieved across the whole tuning range. © 2003 American Institute of Physics.
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42.55.Wd Fiber lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Tunable microfluidic optical fiber gratings

C. Kerbage and B. J. Eggleton

Appl. Phys. Lett. 82, 1338 (2003); http://dx.doi.org/10.1063/1.1557334 (3 pages) | Cited 25 times

Online Publication Date: 25 February 2003

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We demonstrate periodic refractive index gratings in optical waveguides formed by microfluidic plugs that are infused into the airholes of a microstructured optical fibers. The periodic microfluidic plugs, created in the cladding, cause resonant coupling between copropagating optical fiber modes, which results in wavelength-dependent attenuation. We also demonstrate the ability to tune the resonant wavelength by compressing the microfluidic structure. These microfluidic resonant structures provide an alternative method for creating and tuning long-period gratings in optical fibers. This also represents an example of a resonant microfluidic structure and establishes potential strategies for enhanced tunable photonic crystal devices. © 2003 American Institute of Physics.
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42.81.Wg Other fiber-optical devices
42.79.Dj Gratings

Design of a channel drop filter by using a donor-type cavity with high-quality factor in a two-dimensional photonic crystal slab

Yoshihiro Akahane, Masamitsu Mochizuki, Takashi Asano, Yoshinori Tanaka, and Susumu Noda

Appl. Phys. Lett. 82, 1341 (2003); http://dx.doi.org/10.1063/1.1556556 (3 pages) | Cited 52 times

Online Publication Date: 25 February 2003

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We report a design of the surface-emitting-type channel drop filters based on point defect cavities and line defect waveguides in two-dimensional photonic crystal slabs, which aim to improve the filtering resolution and light emission characteristics. Since the filters are passive, the mode volume size of the defects needs not be minimized, but the interaction between the defect cavity and the line defect waveguide must be considered. By adopting a donor-type point defect with three missing holes of linear shape, the quality factor of the filter theoretically increases to values as high as 2900 while it reached only 500 in the previously utilized acceptor-type defect. The results suggest that this donor-type defect is very useful for the development of ultrasmall channel add/drop devices. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures

Noriyuki Yokouchi, Aaron J. Danner, and Kent D. Choquette

Appl. Phys. Lett. 82, 1344 (2003); http://dx.doi.org/10.1063/1.1556562 (3 pages) | Cited 47 times

Online Publication Date: 25 February 2003

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A vertical-cavity surface-emitting laser (VCSEL) having a two-dimensional (2-D) photonic crystal structure on its surface has been investigated for single-lateral-mode operation. We evaluated the effective index change of a VCSEL cavity introduced by a 2-D pattern. Our experimental results showed good agreement with a theoretical model in which the influence of a finite etching depth was taken into consideration. The etching-depth dependence parameter γ, which can be explained by the optical power distribution inside a VCSEL structure, will be helpful for controlling the lateral mode of VCSEL devices. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Tv Photonic crystal lasers and coherent effects
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
42.60.By Design of specific laser systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Cf Surface cleaning, etching, patterning
42.70.Qs Photonic bandgap materials

Mechanisms of temperature performance degradation in terahertz quantum-cascade lasers

D. Indjin, P. Harrison, R. W. Kelsall, and Z. Ikonić

Appl. Phys. Lett. 82, 1347 (2003); http://dx.doi.org/10.1063/1.1558220 (3 pages) | Cited 27 times

Online Publication Date: 25 February 2003

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Electron transport in a terahertz GaAs/AlGaAs quantum-cascade laser is calculated using a fully self-consistent intersubband scattering model. Subband populations, carrier transition rates, and current densities are calculated and all relevant intra- and interperiod electron–electron and electron–LO-phonon scattering mechanisms are included. Employing an energy balance equation that includes the influence of both electron–LO-phonon and electron–electron scattering, the method also enables evaluation of the average electron temperature of the nonequilibrium carrier distributions in the device. In particular, the influence of the lattice temperature on the degradation of population inversion and device performance is investigated. The threshold currents, electric-field-current-density characteristics, and temperature-dependent performance are in good qualitative and quantitative agreement with measurement in a recent experimental realization [Köhler et al., Nature (London) 417, 156 (2002)]. Calculations indicate that an important mechanism limiting its operating temperature is the increase of leakage current from the injector to low levels in the active region, and this feature should be improved in future designs. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.67.De Quantum wells
73.63.Hs Quantum wells
81.05.Ea III-V semiconductors
73.21.Fg Quantum wells
81.07.St Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.38.-k Polarons and electron-phonon interactions
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
72.20.Ht High-field and nonlinear effects
42.50.-p Quantum optics

Stimulated Stokes downconversion in liquid and solid parahydrogen

B. J. McCall, A. J. Huneycutt, R. J. Saykally, C. M. Lindsay, T. Oka, M. Fushitani, Y. Miyamoto, and T. Momose

Appl. Phys. Lett. 82, 1350 (2003); http://dx.doi.org/10.1063/1.1556560 (3 pages) | Cited 3 times

Online Publication Date: 25 February 2003

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We report the results of our preliminary investigations into the suitability of condensed-phase parahydrogen as a Raman-shifting medium for infrared cavity ringdown laser absorption spectroscopy. We have observed the conversion of ∼10-ns pulses of 532-nm radiation into first-, second-, and third-order vibrational Stokes radiation in bulk liquid and solid parahydrogen after a single 11-cm pass. Unexpectedly, we find that liquid H2 yields more efficient conversion than solid H2 with certain focal geometries, and that in the case of the solid, a collimated or loosely focused pump geometry is more efficient than a tight focus. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.By Design of specific laser systems
42.55.Ye Raman lasers
67.80.-s Quantum solids
78.30.C- Liquids
78.30.Hv Other nonmetallic inorganics
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Microwave absorption on a thin film

Herman Bosman, Y. Y. Lau, and R. M. Gilgenbach

Appl. Phys. Lett. 82, 1353 (2003); http://dx.doi.org/10.1063/1.1556969 (3 pages) | Cited 26 times

Online Publication Date: 25 February 2003

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With the use of a simple model, it is shown that a thin film of contaminant on a microwave window may absorb up to 50% of the incident power, even if the film thickness is only a small fraction of its resistive skin depth. This unexpectedly large amount of absorption is conjectured to have played a significant role in window failure. The temperature rise in a thin film is estimated. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources

Current-free double-layer formation in a high-density helicon discharge

Christine Charles and Rod Boswell

Appl. Phys. Lett. 82, 1356 (2003); http://dx.doi.org/10.1063/1.1557319 (3 pages) | Cited 119 times

Online Publication Date: 25 February 2003

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A strong, current-free, electric double-layer with eΦ/kTe ∼ 3 and a thickness of less than 50 debye lengths has been experimentally observed in an expanding, high-density helicon sustained rf (13.56-MHz) discharge. The rapid potential decrease is associated with the “neck” of the vacuum vessel, where the glass source tube joins the aluminum diffusion chamber, and is only observed when the argon gas pressure is less than about 0.5 mTorr. The upstream electron temperature Te appears 25% greater than the downstream Te, and there is a density hole on the downstream edge. This experiment differs from others in that the potentials are self-consistently generated by the plasma itself, and there is no current flowing through an external circuit. The plasma electrons are heated by the rf fields in the source, provide the power to maintain the double-layer, and hence accelerate ions created in the source out into the diffusion chamber. © 2003 American Institute of Physics.
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52.25.Fi Transport properties
52.50.Dg Plasma sources
52.40.Hf Plasma-material interactions; boundary layer effects
52.30.-q Plasma dynamics and flow
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
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Self-organized phase gratings in photoreactive polymer liquid crystals

Hiroshi Ono, Akira Emoto, Nobuhiro Kawatsuki, and Takako Hasegawa

Appl. Phys. Lett. 82, 1359 (2003); http://dx.doi.org/10.1063/1.1557327 (3 pages) | Cited 23 times

Online Publication Date: 25 February 2003

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Optical phase gratings have been prepared in a photo-cross-linkable polymer liquid crystal substituted with a 4-methoxycinnamoyloxybiphenyl side group by the use of linearly polarized ultraviolet interference light and subsequent annealing. The diffraction was almost invisible after irradiation, and was successfully enhanced during the subsequent annealing. Recorded phase grating involves both linear birefringence and surface-relief modulation, which is generated by thermally enhanced reorientation of the mesogenic groups and molecular migration. The sign of the induced birefringence was dependent on the degree of photoreaction and the reversion of the reorientation direction of mesogenic groups has been observed. © 2003 American Institute of Physics.
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61.30.Vx Polymer liquid crystals
42.70.Df Liquid crystals
42.40.Eq Holographic optical elements; holographic gratings
78.20.Fm Birefringence
81.40.Gh Other heat and thermomechanical treatments

Inverse Fourier transform technique to determine second-order optical nonlinearity spatial profiles

A. Ozcan, M. J. F. Digonnet, and G. S. Kino

Appl. Phys. Lett. 82, 1362 (2003); http://dx.doi.org/10.1063/1.1557789 (3 pages) | Cited 7 times

Online Publication Date: 25 February 2003

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A technique is described to measure the second-order nonlinearity spatial profile of nonlinear films. It consists of placing two identical samples back-to-back to create a symmetric nonlinearity profile and measuring the Maker fringes of this sample. Because the profile is symmetric, both its shape and location inside the film can be determined uniquely from the Maker fringe data. Applied to a sample of thermally poled silica, this method reveals a nonlinearity profile that is both deeper (∼25 μm) and stronger (peak d33 = 0.8 pm/V) than previously believed, with spatial features that could not be resolved with previous techniques. This powerful principle is applicable to many other physical problems in which the amplitude, but not the phase, of the Fourier transform can be measured. © 2003 American Institute of Physics.
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42.30.Kq Fourier optics
42.70.Ce Glasses, quartz
42.65.An Optical susceptibility, hyperpolarizability

Bright blue phosphors in ZnO–WO3 binary system discovered through combinatorial methodology

Hideki Hayashi, Akitoshi Ishizaka, Masamitsu Haemori, and Hideomi Koinuma

Appl. Phys. Lett. 82, 1365 (2003); http://dx.doi.org/10.1063/1.1554767 (3 pages) | Cited 16 times

Online Publication Date: 25 February 2003

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We screened bright blue phosphor materials for a ZnO–WO3 binary system. The film was deposited by combinatorial pulsed laser deposition at room temperature and then annealed. The film composition changes continuously in a full-range from ZnO to WO3 on a single substrate. We obtained two results from the distribution of blue emission-intensity observed by cathodoluminescence of the film: (1) not only did the film have a W composition of 50 mol % (stoichiometric ZnWO4 as the well-known blue phosphor material) but also the W composition region from 45 to 60 mol % had the most emissive phase, and (2) two emissive phases other than the ZnWO4, which have not been described in the phase diagram, were found in the W composition region from 10 to 20 mol % and from 65 to 75 mol %. © 2003 American Institute of Physics.
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78.66.Nk Insulators
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Fg Pulsed laser ablation deposition

Surface plasmon transmission across narrow grooves in thin silver films

J. Seidel, S. Grafström, L. Eng, and L. Bischoff

Appl. Phys. Lett. 82, 1368 (2003); http://dx.doi.org/10.1063/1.1558219 (3 pages) | Cited 14 times

Online Publication Date: 25 February 2003

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We report on the direct measurement of surface plasmon transmissivity of narrow grooves in thin silver films using near-field optical microscopy in an attenuated-total-reflection setup. For different groove widths, we observe characteristic changes in transmissivity that are attributed to resonant gap modes. The results are in good agreement with existing theoretical predictions. © 2003 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Uv Near-field scanning microscopy and spectroscopy

Electronic excitations and decomposition of 1,1-diamino-2,2-dinitroethylene

S. N. Rashkeev, M. M. Kuklja, and F. J. Zerilli

Appl. Phys. Lett. 82, 1371 (2003); http://dx.doi.org/10.1063/1.1557768 (3 pages) | Cited 11 times

Online Publication Date: 25 February 2003

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We present first-principles density-functional calculations of the atomic and electronic structure of the molecular crystal 1,1-diamino-2,2-dinitroethylene (FOX-7). Under either an isotropic or uniaxial applied stress, the ideal crystal lattice of this material accumulates elastic energy without any chemical or significant electronic structure changes. The presence of “reversed-orientationmolecule” defects narrows the band gap and lowers the decomposition barrier of the material in the solid phase. © 2003 American Institute of Physics.
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71.20.Rv Polymers and organic compounds
71.55.Ht Other nonmetals
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.Nc Total energy and cohesive energy calculations

X-ray imaging of surface acoustic waves generated in semiconductor crystals by an external transducer

D. Shilo, E. Lakin, E. Zolotoyabko, J. Härtwig, and J. Baruchel

Appl. Phys. Lett. 82, 1374 (2003); http://dx.doi.org/10.1063/1.1557320 (3 pages) | Cited 1 time

Online Publication Date: 25 February 2003

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We demonstrate successful x-ray-diffraction imaging of high-frequency (0.29-GHz) surface acoustic waves (SAWs) propagating in semiconductor crystals (Si and GaAs) with no deposited electrodes on top of them. Experiments were performed at the ID19 beamline of the European Synchrotron Radiation Facility (Grenoble). We used the stroboscopic x-ray topography technique, in which x-ray bursts coming from the storage ring are synchronized with the excited acoustic waves. This technique is able to visualize individual acoustic wave fronts of traveling SAWs and their distortions caused by phonon scattering. In order to generate SAW in semiconductor crystals the latter were coupled to LiNbO3-based SAW transducers via contact liquids. The maximum SAW transmission is achieved for evanescent waves under optimized coupling conditions at the liquid/sample interface. The technique developed opens a way to directly study phonon interaction with defects in nonpiezoelectric and weakly piezoelectric crystals. © 2003 American Institute of Physics.
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43.35.Pt Surface waves in solids and liquids
68.35.Iv Acoustical properties
68.35.Ja Surface and interface dynamics and vibrations

Strong green luminescence in quaternary InAlGaN thin films

Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Kung-Jeng Ma, Chih-Chiang Yan, Chen Hsu, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 82, 1377 (2003); http://dx.doi.org/10.1063/1.1556965 (3 pages) | Cited 8 times

Online Publication Date: 25 February 2003

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We observed strong green luminescence (around 2.37 eV) in two InAlGaN thin film samples, which were originally prepared for applications in the UV range. Based on the observation of the InN peaks and the extended distributions, corresponding to InGaN compounds, in the x-ray diffraction patterns, such green luminescence was attributed to the formation of indium-rich clusters, which formed localized states, in the quaternary films of low indium content (2%). Carrier trapping of such localized states, particularly when carriers received thermal energy such that they could overcome certain potential barriers around the clusters, resulted in strong green luminescence. The observed optical behaviors, including the blueshift phenomenon of photoluminescence spectral peak position in varying temperature, showed that the green luminescence was quite different from the previously reported yellow luminescence, which resulted from defects. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Compressive stress relaxation through buckling of a low-k polymer-thin cap layer system

F. Iacopi, S. H. Brongersma, and K. Maex

Appl. Phys. Lett. 82, 1380 (2003); http://dx.doi.org/10.1063/1.1558897 (3 pages) | Cited 14 times

Online Publication Date: 25 February 2003

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The thermomechanical stability of a system composed of a metallic cap layer on top of a low-k thermosetting polymer film is investigated. It is observed that, when metal layers with high compressive stresses are used, a stress relaxation takes place during thermal anneal at temperatures above 300 °C through buckling of the two-layer system (wrinkling on rigid base). When designing low-k films for interconnects, this should be considered through a careful analysis of structural stability. The onset of this instability is allowed by the high compliance of the polymeric film, due to its transition from elastic to viscoelastic behavior through creep phenomena. This mechanism is more pronounced when a polymer film with 20% subtractive porosity is used. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Cc Kinetics of defect formation and annealing

Improved interface stability of phase-change recording media

A. E. T. Kuiper, M. van Schijndel, and Y. Tamminga

Appl. Phys. Lett. 82, 1383 (2003); http://dx.doi.org/10.1063/1.1558893 (3 pages) | Cited 2 times

Online Publication Date: 25 February 2003

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During writing, the phase-change layer in a medium for optical recording is heated to above its melting temperature of typically 600 °C. Although this situation lasts for only 10–100 ns, it is repeated many times during consecutive overwrite cycles. As a result, the phase-change layer gradually reacts with the adjacent ZnS:SiO2 isolation layers, which deteriorates the overwrite performance. Applying Rutherford backscattering spectrometry, we observed that thin caplayers of AlOxNy, HfOxNy, Si3N4, or In–SnOx, introduced at both interfaces of the phase-change layer, suppress this reaction adequately. Such layers appear also very beneficial for the inherently unstable interface between the Ag mirror and the ZnS:SiO2 dielectric layer. © 2003 American Institute of Physics.
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68.65.Ac Multilayers
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.79.Wc Optical coatings
42.79.Vb Optical storage systems, optical disks
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.60.Dv Thermal stability; thermal effects
42.70.-a Optical materials
64.70.D- Solid-liquid transitions

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Dogheche, and E. Dumont

Appl. Phys. Lett. 82, 1386 (2003); http://dx.doi.org/10.1063/1.1558217 (3 pages) | Cited 10 times

Online Publication Date: 25 February 2003

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We report on the influence of the structural properties on the refractive index of AlN films grown on Si(111) substrates by molecular-beam epitaxy using ammonia. The structural properties are assessed by reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and x-ray diffraction. Refractive index values are deduced from room-temperature spectroscopic ellipsometry. Optical data analysis is performed using the Kramers-Krönig relation in the transparent spectral region, from 1.6 to 3.2 eV. Evidence is presented showing the influence of strain and dislocation density on the AlN layer refractive index. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.Lk Linear defects: dislocations, disclinations
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)
68.60.Bs Mechanical and acoustical properties

Layer-by-layer growth of Ag on a GaN(0001) surface

Kehui Wu, Q. Z. Xue, R. Z. Bakhtizin, Y. Fujikawa, X. Li, T. Nagao, Q. K. Xue, and T. Sakurai

Appl. Phys. Lett. 82, 1389 (2003); http://dx.doi.org/10.1063/1.1556572 (3 pages) | Cited 4 times

Online Publication Date: 25 February 2003

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A drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski–Krastanov (SK) growth at low Ag flux ( ∼ 0.8 ML/min) to layer-by-layer growth at a high flux ( ∼ 60 ML/min), was observed. Based on this finding, an approach to obtain a flat epitaxial Ag film on the GaN(0001) surface, by using the high Ag flux, was demonstrated. In addition, an unreconstructed Ag-terminated GaN(0001)-1×1 surface was obtained by annealing the Ag film-covered GaN(0001) surface, and its structure was explained by T1-site adatom model. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.43.Fg Adsorbate structure (binding sites, geometry)
61.72.Cc Kinetics of defect formation and annealing
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Tunable optical properties of nanostructured-gold/ mesoporous-silica assembly

Z. S. Li, C. X. Kan, and W. P. Cai

Appl. Phys. Lett. 82, 1392 (2003); http://dx.doi.org/10.1063/1.1556563 (3 pages) | Cited 13 times

Online Publication Date: 25 February 2003

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Gold nanowires have been fabricated by heat treatment of HAuCl4-soaked mesoporous silica at 300 °C in air atmosphere. Transmission-electron-microscope images show that, with increase of annealing temperature, Au nanowires gradually grow into nanoparticles. Due to the morphology transformation, the surface plasmon resonance peak of the composite can be continuously tuned from about 1080 to about 530 nm. Adopting the extended Gans’ formula in dipole approximation, simulation also proves that tunable optical properties over a large spectral region can be realized by such morphology transformation. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.05.Mh Cermets, ceramic and refractory composites
64.70.Nd Structural transitions in nanoscale materials
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
68.37.Lp Transmission electron microscopy (TEM)
42.70.-a Optical materials
81.16.Dn Self-assembly

Photoluminescence quenching in Er-doped compounds

A. R. Zanatta

Appl. Phys. Lett. 82, 1395 (2003); http://dx.doi.org/10.1063/1.1557318 (3 pages) | Cited 23 times

Online Publication Date: 25 February 2003

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The temperature-induced quenching in the photoluminescence intensity (IPL) of Er3+ ions in different semiconductor hosts is discussed in this letter. Based on a compilation of several IPL(T) experimental curves, corresponding to either crystalline or amorphous Er-doped samples, and after a critical data analysis, it was possible to determine a temperature of quenching Tq such that IPL(Tq) = 0.95 IPL (lowest T). These experimental Tq values have been analyzed in terms of certain host characteristics such as optical band gap and phonon frequency. As a result of this study it was possible to state that: (i) Tq strongly depends on the optical band gap and atomic structure of all studied semiconductor hosts; (ii) the host phonon frequency plays a minor role in the quenching of IPL; and (iii) based on the partial ionic character of each semiconductor host, both the energy and the localization of the photon-generated electron–hole pairs determine the IPL quenching. Moreover, the present phenomenological model is consistent with the influence that codoping and thermal anneals have on the IPL enhancement of Er-doped compounds. © 2003 American Institute of Physics.
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78.55.-m Photoluminescence, properties and materials
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
63.50.-x Vibrational states in disordered systems
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Hj Laser materials
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