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3 Mar 2003

Volume 82, Issue 9, pp. 1323-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1437 (2003); http://dx.doi.org/10.1063/1.1556958 (3 pages)

T. K. Yamada, M. M. J. Bischoff, T. Mizoguchi, and H. van Kempen
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Zenithal bistability in a nematic liquid-crystal device with a monostable surface condition

L. A. Parry-Jones, E. G. Edwards, S. J. Elston, and C. V. Brown

Appl. Phys. Lett. 82, 1476 (2003); http://dx.doi.org/10.1063/1.1557317 (3 pages) | Cited 11 times

Online Publication Date: 25 February 2003

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The ground-state director configurations in a grating-aligned, zenithally bistable nematic device are calculated in two dimensions using a Q tensor approach. The director profiles generated are well described by a one-dimensional variation of the director across the width of the device, with the distorted region near the grating replaced by an effective surface anchoring energy. This work shows that device bistability can in fact be achieved by using a monostable surface term in the one-dimensional model. This implies that is should be possible to construct a device showing zenithal bistability without the need for a micropatterned surface. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Electron spin resonance microscopic surface imaging using a microwave scanning probe

F. Sakran, A. Copty, M. Golosovsky, N. Bontemps, D. Davidov, and A. Frenkel

Appl. Phys. Lett. 82, 1479 (2003); http://dx.doi.org/10.1063/1.1556561 (3 pages) | Cited 10 times

Online Publication Date: 25 February 2003

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We report on a scanning electron-spin-resonance microscopy based on a microwave near-field probe. The probe consists of an open dielectric resonator with a thin-slit aperture. The spatial resolution in one direction is determined by the slit width and can be varied between 1 and 100 μm, while the spatial resolution in the perpendicular direction is ∼10 times larger. We demonstrate spatially-resolved measurements on diphenyl-picryl-hydrazil samples on a substrate. A sensitivity of 1011 spins could be achieved using a 4-μm-wide slit operating at 8.5 GHz and in a contact mode. © 2003 American Institute of Physics.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
76.30.-v Electron paramagnetic resonance and relaxation
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Formation of the accumulation layer in polymer field-effect transistors

L. Bürgi, R. H. Friend, and H. Sirringhaus

Appl. Phys. Lett. 82, 1482 (2003); http://dx.doi.org/10.1063/1.1556564 (3 pages) | Cited 31 times

Online Publication Date: 25 February 2003

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We present an experimental study of charge transfer in polymer thin-film field-effect devices. The rearrangement of the charge-carrier density in the transistor channel upon a gate-voltage swing has been monitored in real time and space by means of noncontact scanning potentiometry. The experimental results are in excellent agreement with a simple theory, in which the charging currents are assumed to be driven by drift in the self-induced electric field. The charge density exponentially approaches its final value with a time constant given by L2/μ∣Vg∣π2, where L is the characteristic device dimension, μ the field-effect mobility, and Vg the final gate voltage. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
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