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3 Mar 2003

Volume 82, Issue 9, pp. 1323-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1437 (2003); http://dx.doi.org/10.1063/1.1556958 (3 pages)

T. K. Yamada, M. M. J. Bischoff, T. Mizoguchi, and H. van Kempen
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Fatigue-free La-modified PbTiO3 thin films prepared by pulsed-laser deposition on Pt/Ti/SiO2/Si substrates

Zhenggao Dong, Mingrong Shen, and Wenwu Cao

Appl. Phys. Lett. 82, 1449 (2003); http://dx.doi.org/10.1063/1.1556559 (3 pages) | Cited 10 times

Online Publication Date: 25 February 2003

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Fatigue-free 14 mol % La-modified PbTiO3 (PLT) thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition and crystallized by furnace annealing at 600 °C. The 220-nm-thick PLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2Pr) and the coercive field (2Ec) were about 20 μC/cm2 and 70 kV/cm, respectively, and the PLT capacitors did not show any noticeable fatigue up to 3×109 read/write switching cycles at a frequency of 1 MHz and switching voltage of 5 V. By comparing the microstructures, electric, and dielectric properties with those of pure PbTiO3 thin films, the suppression of oxygen vacancies and/or charged defects, and the coral-like microstructures developed in PLT films were attributed to its fatigue-free feature. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
81.15.Fg Pulsed laser ablation deposition
81.40.Gh Other heat and thermomechanical treatments
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

W. Fan, S. Saha, J. A. Carlisle, O. Auciello, R. P. H. Chang, and R. Ramesh

Appl. Phys. Lett. 82, 1452 (2003); http://dx.doi.org/10.1063/1.1556959 (3 pages) | Cited 17 times

Online Publication Date: 25 February 2003

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Ti–Al/Cu/Ta multilayered electrodes were fabricated on SiO2/Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 °C. The thin oxide layer, formed on the Ti–Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (BaxSr1−x)TiO3 (BST) thin films were grown on the layered Ti–Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current <2×10−8 A/cm2 at 100 kV/cm. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
81.05.Bx Metals, semimetals, and alloys
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.Mq Oxidation
81.15.Cd Deposition by sputtering

Electro-optic characteristics of (001)-oriented Ba0.6Sr0.4TiO3 thin films

Dal-Young Kim, Seung Eon Moon, Eun-Kyung Kim, Su-Jae Lee, Jong-Jin Choi, and Hyoun-Ee Kim

Appl. Phys. Lett. 82, 1455 (2003); http://dx.doi.org/10.1063/1.1556962 (3 pages) | Cited 22 times

Online Publication Date: 25 February 2003

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Ba0.6Sr0.4TiO3 thin films were grown on MgO(001) substrates using pulsed-laser deposition. The films were highly oriented along the (001) direction, and showed a high electro-optic response to an external electric field. The quadratic electro-optic coefficient Rc was 1.0×10−14 m2/V2, and the birefringence variation was as large as 0.09. Various electro-optic applications as well as the microwave applications of barium strontium titanate thin films are expected. © 2003 American Institute of Physics.
Show PACS
78.20.Jq Electro-optical effects
78.66.Nk Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
78.20.Fm Birefringence
42.70.-a Optical materials
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