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3 Mar 2003

Volume 82, Issue 9, pp. 1323-1488

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Appl. Phys. Lett. 82, 1437 (2003); http://dx.doi.org/10.1063/1.1556958 (3 pages)

T. K. Yamada, M. M. J. Bischoff, T. Mizoguchi, and H. van Kempen
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Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x ≅ 0.6) epilayer grown on GaN

W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 82, 1413 (2003); http://dx.doi.org/10.1063/1.1556576 (3 pages) | Cited 7 times

Online Publication Date: 25 February 2003

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Field-induced electron transport in an InxGa1−xN (x ≅ 0.6) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Nonequilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the InxGa1−xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
77.65.Ly Strain-induced piezoelectric fields
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.30.Fs III-V and II-VI semiconductors

Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Ümit Özgür, Henry O. Everitt, Stacia Keller, and Steven P. DenBaars

Appl. Phys. Lett. 82, 1416 (2003); http://dx.doi.org/10.1063/1.1557770 (3 pages) | Cited 10 times

Online Publication Date: 25 February 2003

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Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different QW In compositions x. SE threshold energy densities (Ith) increased with increasing x-dependent QW depth. Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of Ith on x. Carriers are captured from the barriers to the QWs in <1 ps, while carrier recombination rates increased with increasing x. For excitation above Ith, an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing Ith. © 2003 American Institute of Physics.
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78.67.De Quantum wells
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.66.Fd III-V semiconductors
81.07.St Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Cd Superlattices
73.21.Fg Quantum wells
78.47.-p Spectroscopy of solid state dynamics
61.66.Bi Elemental solids
61.66.Dk Alloys

Nonvolatile electrical bistability of organic/metal-nanocluster/organic system

Liping Ma, Seungmoon Pyo, Jianyong Ouyang, Qianfei Xu, and Yang Yang

Appl. Phys. Lett. 82, 1419 (2003); http://dx.doi.org/10.1063/1.1556555 (3 pages) | Cited 167 times

Online Publication Date: 25 February 2003

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Two-terminal electrical bistable devices have been fabricated using a sandwich structure of organic/metal/organic as the active medium, sandwiched between two external electrodes. The nonvolatile electrical bistability of these devices can be controlled using a positive and a negative electrical bias alternatively. A forward bias may switch the device to a high-conductance state, while a reverse bias is required to restore it to a low-conductance state. In this letter, a model to explain this electrical bistability is proposed. It is found that the bistability is very sensitive to the nanostructure of the middle metal layer. For obtaining the devices with well-controlled bistability, the middle metal layer is incorporated with metal nanoclusters separated by thin oxide layers. These nanoclusters behave as the charge storage elements, which enable the nonvolatile electrical bistability when biased to a sufficiently high voltage. This mechanism is supported by the experimental data obtained from UV–visible absorption spectra, atomic force microscopy, and impedance spectroscopy. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
68.37.Ps Atomic force microscopy (AFM)
78.40.Kc Metals, semimetals, and alloys
78.66.Bz Metals and metallic alloys

Band offsets at CdCr2Se4–(AlGa)As and CdCr2Se4–ZnSe interfaces

H. B. Zhao, Y. H. Ren, B. Sun, G. Lüpke, A. T. Hanbicki, and B. T. Jonker

Appl. Phys. Lett. 82, 1422 (2003); http://dx.doi.org/10.1063/1.1558956 (3 pages) | Cited 3 times

Online Publication Date: 25 February 2003

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The band discontinuities of CdCr2Se4–(AlGa)As and CdCr2Se4–ZnSe heterojunctions are measured to high resolution by internal photoemission using a widely tunable optical parametric amplifier system. The conduction band offsets ΔEc = 660 and 530 meV at the CdCr2Se4–GaAs and CdCr2Se4–ZnSe interfaces are determined from the threshold energies of the photocurrent spectrum at room temperature. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Jv Interfaces; heterostructures; nanostructures

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

T. Irisawa, M. Myronov, O. A. Mironov, E. H. C. Parker, K. Nakagawa, M. Murata, S. Koh, and Y. Shiraki

Appl. Phys. Lett. 82, 1425 (2003); http://dx.doi.org/10.1063/1.1558895 (3 pages) | Cited 17 times

Online Publication Date: 25 February 2003

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We performed systematic low-temperature (T = 350 mK–15 K) magnetotransport measurements on the two-dimensional hole gas with various sheet carrier densities Ps = (0.57–2.1)×1012 cm−2 formed in the strained Ge channel modulation-doped (MOD) SiGe heterostructures grown on Si substrates. It was found that the effective hole mass deduced by temperature dependent Shubnikov–de Hass oscillations increased monotonically from (0.087±0.05)m0 to (0.19±0.01)m0 with the increase of Ps, showing large band nonparabolicity in strained Ge. In contrast to this result, the increase of the mobility with increasing Ps (up to 29 000 cm2/V s) was observed, suggesting that Coulomb scattering played a dominant role in the transport of the Ge channel at low temperatures. In addition, the Dingle ratio of the transport time to the quantum lifetime was found to increase with increasing Ps, which was attributed to the increase of remote impurity scattering with the increase of the doping concentration in MOD SiGe layers. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.20.My Galvanomagnetic and other magnetotransport effects

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, Jihyun Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, et al.

Appl. Phys. Lett. 82, 1428 (2003); http://dx.doi.org/10.1063/1.1559631 (3 pages) | Cited 17 times

Online Publication Date: 25 February 2003

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Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm−2). Devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices, consistent with differences in average band energy. The changes in device performance could be attributed completely to bulk trapping effects, demonstrating that the effectiveness of the Sc2O3 layers in passivating surface states in the drain-source region was undiminished by the proton irradiation. Sc2O3-passivated AlGaN/HEMTs appear to be attractive candidates for space and terrestrial applications where resistance to high fluxes of ionizing radiation is a criteria. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.61.Ey III-V semiconductors
81.65.Rv Passivation
61.80.Jh Ion radiation effects
61.82.Ms Insulators
61.82.Fk Semiconductors

Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier

Shreepad Karmalkar and D. Mahaveer Sathaiya

Appl. Phys. Lett. 82, 1431 (2003); http://dx.doi.org/10.1063/1.1557773 (3 pages) | Cited 6 times

Online Publication Date: 25 February 2003

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We report a simple closed-form model of the total emission through a triangular potential barrier due to thermionic field emission (TFE) and field emission (FE). Such a model has not been derived previously, since the energy distribution function of emitted electrons is not analytically integrable. We overcame this difficulty using a geometrical approximation of the integration operation. Our model so derived reveals the energy location and spread of the emission, which allow estimation of the emission through any fraction of the barrier. It also yields a characteristic field parameter in terms of the barrier height, temperature, and effective mass, which can be used to identify the TFE, FE, and TE regimes of device operation. © 2003 American Institute of Physics.
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79.40.+z Thermionic emission
79.70.+q Field emission, ionization, evaporation, and desorption
02.60.Jh Numerical differentiation and integration
73.40.Cg Contact resistance, contact potential
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