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3 Mar 2003

Volume 82, Issue 9, pp. 1323-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1437 (2003); http://dx.doi.org/10.1063/1.1556958 (3 pages)

T. K. Yamada, M. M. J. Bischoff, T. Mizoguchi, and H. van Kempen
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Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, and M. Holtz

Appl. Phys. Lett. 82, 1323 (2003); http://dx.doi.org/10.1063/1.1557325 (3 pages) | Cited 9 times

Online Publication Date: 25 February 2003

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We describe solar-blind photodetectors based on superlattices of AlN/AlGa(In)N. The superlattices have a period of 1.4 nm, determined by x-ray diffraction, and an effective band gap of 260 nm measured by optical reflectivity. Using simple mesa diodes, without surface passivation, we obtain low dark leakage currents of 0.2–0.3 pA, corresponding to the leakage current density of ∼0.3 nA/cm2, and high zero-bias resistance of ∼ 1×1011 Ω. Excellent visible cutoff is obtained for these devices, with six orders of magnitude decrease in responsivity from 260 to 380 nm. These results demonstrate the potential of junctions formed by short-period superlattices in large-band-gap devices. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

GaN-based waveguide devices for long-wavelength optical communications

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 82, 1326 (2003); http://dx.doi.org/10.1063/1.1557790 (3 pages) | Cited 26 times

Online Publication Date: 25 February 2003

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Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.81.Qb Fiber waveguides, couplers, and arrays
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors

Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices

M. H. M. Reddy, D. A. Buell, A. S. Huntington, T. Asano, R. Koda, D. Feezell, D. Lofgreen, and L. A. Coldren

Appl. Phys. Lett. 82, 1329 (2003); http://dx.doi.org/10.1063/1.1554485 (3 pages) | Cited 5 times

Online Publication Date: 25 February 2003

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We report a lateral oxide-confinement layer for InP-based devices using lattice-matched AlGaAsSb. The confinement-layer-induced excess loss at different widths was extracted after de-embedding the losses due to carrier diffusion, nonradiative recombination, and changes in internal injection efficiency. The results show that AlGaAsSb oxide acts as an excellent confinement layer, and shows no excess loss down to a width of 4 μm. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Single-mode tapered waveguide laser in Er-doped glass with multimode-diode pumping

Pratheepan Madasamy, S. Honkanen, D. F. Geraghty, and N. Peyghambarian

Appl. Phys. Lett. 82, 1332 (2003); http://dx.doi.org/10.1063/1.1557771 (3 pages) | Cited 18 times

Online Publication Date: 25 February 2003

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We report on a demonstration of a planar waveguide laser configuration for single-mode operation around 1550 nm using cost-effective multimode diode pumping. The laser was fabricated by Ag film ion exchange in a hybrid phosphate glass which has active and passive regions monolithically integrated in a single glass chip. Power of 54 mW at 1538 nm was measured from the single-mode output waveguide. © 2003 American Institute of Physics.
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42.55.Xi Diode-pumped lasers
42.55.Rz Doped-insulator lasers and other solid state lasers
42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.70.Ce Glasses, quartz
42.86.+b Optical workshop techniques

Widely tunable L-band erbium-doped fiber laser with fiber Bragg gratings based on optical bistability

Qinghe Mao and John W. Y. Lit

Appl. Phys. Lett. 82, 1335 (2003); http://dx.doi.org/10.1063/1.1557321 (3 pages) | Cited 15 times

Online Publication Date: 25 February 2003

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We propose and demonstrate a mechanism to widely tune L-band erbium-doped fiber lasers with ordinary commercial tunable fiber Bragg gratings. The function is based on the dual-wavelength bistability in linear overlapping laser cavities. The laser may be switched between two wavelengths located, respectively, in the short- and long-wavelength regions of the L-band by triggering the pump with a typical switching time of about 11 ms. The two wavelengths can be independently tuned to give the laser a total tuning range of 33 nm and an output dynamic range of 7 dB. Nearly constant output powers with high optical signal-to-noise ratios are achieved across the whole tuning range. © 2003 American Institute of Physics.
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42.55.Wd Fiber lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Tunable microfluidic optical fiber gratings

C. Kerbage and B. J. Eggleton

Appl. Phys. Lett. 82, 1338 (2003); http://dx.doi.org/10.1063/1.1557334 (3 pages) | Cited 25 times

Online Publication Date: 25 February 2003

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We demonstrate periodic refractive index gratings in optical waveguides formed by microfluidic plugs that are infused into the airholes of a microstructured optical fibers. The periodic microfluidic plugs, created in the cladding, cause resonant coupling between copropagating optical fiber modes, which results in wavelength-dependent attenuation. We also demonstrate the ability to tune the resonant wavelength by compressing the microfluidic structure. These microfluidic resonant structures provide an alternative method for creating and tuning long-period gratings in optical fibers. This also represents an example of a resonant microfluidic structure and establishes potential strategies for enhanced tunable photonic crystal devices. © 2003 American Institute of Physics.
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42.81.Wg Other fiber-optical devices
42.79.Dj Gratings

Design of a channel drop filter by using a donor-type cavity with high-quality factor in a two-dimensional photonic crystal slab

Yoshihiro Akahane, Masamitsu Mochizuki, Takashi Asano, Yoshinori Tanaka, and Susumu Noda

Appl. Phys. Lett. 82, 1341 (2003); http://dx.doi.org/10.1063/1.1556556 (3 pages) | Cited 52 times

Online Publication Date: 25 February 2003

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We report a design of the surface-emitting-type channel drop filters based on point defect cavities and line defect waveguides in two-dimensional photonic crystal slabs, which aim to improve the filtering resolution and light emission characteristics. Since the filters are passive, the mode volume size of the defects needs not be minimized, but the interaction between the defect cavity and the line defect waveguide must be considered. By adopting a donor-type point defect with three missing holes of linear shape, the quality factor of the filter theoretically increases to values as high as 2900 while it reached only 500 in the previously utilized acceptor-type defect. The results suggest that this donor-type defect is very useful for the development of ultrasmall channel add/drop devices. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures

Noriyuki Yokouchi, Aaron J. Danner, and Kent D. Choquette

Appl. Phys. Lett. 82, 1344 (2003); http://dx.doi.org/10.1063/1.1556562 (3 pages) | Cited 47 times

Online Publication Date: 25 February 2003

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A vertical-cavity surface-emitting laser (VCSEL) having a two-dimensional (2-D) photonic crystal structure on its surface has been investigated for single-lateral-mode operation. We evaluated the effective index change of a VCSEL cavity introduced by a 2-D pattern. Our experimental results showed good agreement with a theoretical model in which the influence of a finite etching depth was taken into consideration. The etching-depth dependence parameter γ, which can be explained by the optical power distribution inside a VCSEL structure, will be helpful for controlling the lateral mode of VCSEL devices. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Tv Photonic crystal lasers and coherent effects
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
42.60.By Design of specific laser systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Cf Surface cleaning, etching, patterning
42.70.Qs Photonic bandgap materials

Mechanisms of temperature performance degradation in terahertz quantum-cascade lasers

D. Indjin, P. Harrison, R. W. Kelsall, and Z. Ikonić

Appl. Phys. Lett. 82, 1347 (2003); http://dx.doi.org/10.1063/1.1558220 (3 pages) | Cited 27 times

Online Publication Date: 25 February 2003

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Electron transport in a terahertz GaAs/AlGaAs quantum-cascade laser is calculated using a fully self-consistent intersubband scattering model. Subband populations, carrier transition rates, and current densities are calculated and all relevant intra- and interperiod electron–electron and electron–LO-phonon scattering mechanisms are included. Employing an energy balance equation that includes the influence of both electron–LO-phonon and electron–electron scattering, the method also enables evaluation of the average electron temperature of the nonequilibrium carrier distributions in the device. In particular, the influence of the lattice temperature on the degradation of population inversion and device performance is investigated. The threshold currents, electric-field-current-density characteristics, and temperature-dependent performance are in good qualitative and quantitative agreement with measurement in a recent experimental realization [Köhler et al., Nature (London) 417, 156 (2002)]. Calculations indicate that an important mechanism limiting its operating temperature is the increase of leakage current from the injector to low levels in the active region, and this feature should be improved in future designs. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.67.De Quantum wells
73.63.Hs Quantum wells
81.05.Ea III-V semiconductors
73.21.Fg Quantum wells
81.07.St Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.38.-k Polarons and electron-phonon interactions
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
72.20.Ht High-field and nonlinear effects
42.50.-p Quantum optics

Stimulated Stokes downconversion in liquid and solid parahydrogen

B. J. McCall, A. J. Huneycutt, R. J. Saykally, C. M. Lindsay, T. Oka, M. Fushitani, Y. Miyamoto, and T. Momose

Appl. Phys. Lett. 82, 1350 (2003); http://dx.doi.org/10.1063/1.1556560 (3 pages) | Cited 3 times

Online Publication Date: 25 February 2003

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We report the results of our preliminary investigations into the suitability of condensed-phase parahydrogen as a Raman-shifting medium for infrared cavity ringdown laser absorption spectroscopy. We have observed the conversion of ∼10-ns pulses of 532-nm radiation into first-, second-, and third-order vibrational Stokes radiation in bulk liquid and solid parahydrogen after a single 11-cm pass. Unexpectedly, we find that liquid H2 yields more efficient conversion than solid H2 with certain focal geometries, and that in the case of the solid, a collimated or loosely focused pump geometry is more efficient than a tight focus. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.By Design of specific laser systems
42.55.Ye Raman lasers
67.80.-s Quantum solids
78.30.C- Liquids
78.30.Hv Other nonmetallic inorganics
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