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3 Mar 2003

Volume 82, Issue 9, pp. 1323-1488

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Appl. Phys. Lett. 82, 1437 (2003); http://dx.doi.org/10.1063/1.1556958 (3 pages)

T. K. Yamada, M. M. J. Bischoff, T. Mizoguchi, and H. van Kempen
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Linear and nonlinear optical properties of single-walled carbon nanotubes within an ordered array of nanosized silica spheres

H. Han, S. Vijayalakshmi, A. Lan, Z. Iqbal, H. Grebel, E. Lalanne, and A. M. Johnson

Appl. Phys. Lett. 82, 1458 (2003); http://dx.doi.org/10.1063/1.1557322 (3 pages) | Cited 15 times

Online Publication Date: 25 February 2003

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The linear and nonlinear optical properties of well-separated, single-walled carbon nanotubes were measured. The tubes were grown into the voids of an ordered array of silica spheres. Transmission of light through these tubes increased with the incident laser intensity. The nonlinear decay time of a λ = 800-nm probe was measured at 320 fs when the sample was pumped with 400-nm light. Current–voltage characteristics changed upon illumination with a laser beam. Raman scattering decreased as electrical biasing increased. © 2003 American Institute of Physics.
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78.67.Ch Nanotubes
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.30.Na Fullerenes and related materials
73.63.Fg Nanotubes

Insight into the premelting and melting processes of metal nanoparticles through capacitance measurements

G. B. Parravicini, A. Stella, P. Tognini, P. G. Merli, A. Migliori, P. Cheyssac, and R. Kofman

Appl. Phys. Lett. 82, 1461 (2003); http://dx.doi.org/10.1063/1.1556968 (3 pages) | Cited 8 times

Online Publication Date: 25 February 2003

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We demonstrate that capacitance measurements on metallic nanosystems (specifically Ga nanoparticles embedded in dielectric matrix) yield information to clarify the complex phenomenon of melting, where different mechanisms may interplay. The technique is proved to be extremely powerful to study the role of surfaces and interfaces on a twofold basis: very short (of the order of a few angstroms) penetration depth of the probing electric field and a strict relationship of capacity with entropy. We show that initial disorder starts to take place ≈65 °C before full melting, with evidence of two regimes in the premelting and melting region. © 2003 American Institute of Physics.
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64.70.D- Solid-liquid transitions
61.46.-w Structure of nanoscale materials
64.70.Nd Structural transitions in nanoscale materials
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
81.07.Bc Nanocrystalline materials
73.63.Bd Nanocrystalline materials
65.40.G- Other thermodynamical quantities
72.80.Tm Composite materials

Self-limiting size control of hemispherical grains of microcrystalline Si self-assembled on an amorphous Si film surface

Housei Akazawa

Appl. Phys. Lett. 82, 1464 (2003); http://dx.doi.org/10.1063/1.1558214 (3 pages) | Cited 2 times

Online Publication Date: 25 February 2003

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When a hydrogen-free amorphous silicon film deposited by rf plasma sputtering is annealed at temperatures above 540 °C, hemispherical grains of microcrystalline Si nucleate on its surface. The film surface is maintained macroscopically flat without any protrusions around the grains, indicating that only Si atoms at the outermost surface aggregate into grains. The size distribution of the grains was very narrow; the deviation from the mean was less than 8%. Even when the annealing temperature was varied between 600 and 850 °C, the mean base radii and the mean heights of the grains stayed within the ranges of 45 to 48.5 and 35 to 42 nm, respectively. Also, 3 h of annealing produced a saturation of the self-assembling process. This observation suggests that the grain size can be controlled in a self-limiting manner in terms of the temperature and period of annealing. © 2003 American Institute of Physics.
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68.47.Fg Semiconductor surfaces
68.35.Dv Composition, segregation; defects and impurities
61.72.Cc Kinetics of defect formation and annealing
61.43.Dq Amorphous semiconductors, metals, and alloys
68.55.A- Nucleation and growth

Chirality-dependent curvature effect in smallest single-walled carbon nanotubes

Irene L. Li, G. D. Li, H. J. Liu, C. T. Chan, and Z. K. Tang

Appl. Phys. Lett. 82, 1467 (2003); http://dx.doi.org/10.1063/1.1558892 (3 pages) | Cited 18 times

Online Publication Date: 25 February 2003

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Polarized Raman spectra are measured for 0.4 nm single-walled carbon nanotubes embedded in the zeolite matrix. The polarization dependence of the Raman intensity of the radial breathing mode showed that the carbon nanotubes inside the channels of the zeolite are perfectly aligned. The observed radial breathing mode frequencies deviated from those predicted by the elastic model. The strong curvature effect leads to two features: (i) the radial breathing mode frequencies show obvious softening and (ii) the degree of the softening depends on the tube chirality, which agrees well with the theoretic calculations. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.67.Ch Nanotubes
81.07.De Nanotubes
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions
78.30.Na Fullerenes and related materials
78.20.Ek Optical activity

Electrochemical route for the fabrication of alkanethiolate-capped gold nanoparticles

P. Zhang, P. S. Kim, and T. K. Sham

Appl. Phys. Lett. 82, 1470 (2003); http://dx.doi.org/10.1063/1.1558901 (3 pages) | Cited 5 times

Online Publication Date: 25 February 2003

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Nearly monodispersed gold nanoparticles (NPs) of a few nanometers were fabricated and immobilized simultaneously on silicon surface by the galvanostatic reduction of HAuCl4 in the presence of dodecanethiol. X-ray absorption spectra at both sulfur K edge and gold L3 edge confirm the existence of the alkanethiolate-protected Au NPs and reveal their structural and bonding characteristics. Alkanethiolate-capped Au NPs were also successfully fabricated, with the same technique, on porous silicon, a functional substrate with high surface area. The hybrid thiol-capping/electrodeposition method reported here offers an attractive approach to the fabrication of highly stable gold NPs on various functional substrates with a simple, fast, and easily controlled experimental procedure. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
82.45.Aa Electrochemical synthesis
82.45.Yz Nanostructured materials in electrochemistry
82.45.Qr Electrodeposition and electrodissolution
81.16.Be Chemical synthesis methods
81.15.Pq Electrodeposition, electroplating
78.70.Dm X-ray absorption spectra

Nanometer-scale composition measurements of Ge/Si(100) islands

Margaret Floyd, Yangting Zhang, K. P. Driver, Jeff Drucker, P. A. Crozier, and David J. Smith

Appl. Phys. Lett. 82, 1473 (2003); http://dx.doi.org/10.1063/1.1558215 (3 pages) | Cited 51 times

Online Publication Date: 25 February 2003

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Quantitative, nanometer-scale spatial resolution electron energy-loss spectroscopy (EELS) was used to map the composition of coherent islands grown by molecular-beam epitaxy of pure Ge onto Si(100). The Ge concentration XGe decreased, and the Ge/Si interface became more diffuse as the growth temperature increased from 400 to 700 °C. Integrated island volumes measured by atomic force microscopy (AFM) increased linearly with Ge coverage θGe, with slopes greater than 1. This result confirmed that island growth is faster than the Ge deposition rate due to Si interdiffusion. The linearity of the island volume versus θGe curves implied that XGe was independent of island size. XGe measured by EELS and AFM agree well with each other and correctly predicted the minimum dome size observed at each growth temperature. © 2003 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.47.Fg Semiconductor surfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.49.Jk Electron scattering from surfaces
68.55.A- Nucleation and growth
79.20.Uv Electron energy loss spectroscopy
68.37.Ps Atomic force microscopy (AFM)
81.05.Cy Elemental semiconductors
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