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8 Sep 2003

Volume 83, Issue 10, pp. 1909-2078

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1929 (2003); http://dx.doi.org/10.1063/1.1609044 (3 pages)

Thierry Aellen, Stéphane Blaser, Mattias Beck, Daniel Hofstetter, Jérôme Faist, and Emilio Gini
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Field-effect-induced midinfrared electroluminescence of a quantum-wire-cascade structure by remote δ-doping

Stefan Schmult, Ingo Keck, Thomas Herrle, Werner Wegscheider, Max Bichler, Dieter Schuh, and Gerhard Abstreiter

Appl. Phys. Lett. 83, 1909 (2003); http://dx.doi.org/10.1063/1.1609041 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2003

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We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) heterosystem whose emission properties are controlled by an additional electric field perpendicular to the transport direction. In our case, the additional field is established by remote δ-silicon doping, which is also responsible for charge carrier supply. The field originating from the δ-doping gives rise to an in-plane confinement creating a quantum-wire cascade. This field-effect quantum-cascade emitter is realized using the cleaved edge overgrowth method. Radiative electronic transitions between discrete energy levels in coupled quantum wires were calculated for such a structure. Without an additional electric field, no significant transport is observed. With a field applied, midinfrared emission is observed at a peak wave number of 1200 cm−1 with a full width at half maximum of 300 cm−1 for a heat-sink temperature of 20 K. The presented sample is an experimental proposal for a unipolar quantum-wire intersubband laser. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.Lt Quantum wires
78.60.Fi Electroluminescence

Infrared photonic crystal fiber

E. Rave, K. Roodenko, and A. Katzir

Appl. Phys. Lett. 83, 1912 (2003); http://dx.doi.org/10.1063/1.1608481 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2003

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An infrared photonic crystal fiber has been made by multiple extrusions of silver halide (AgClxBr1−x) crystalline materials. The core of the fiber consisted of pure AgBr, and the cladding area included fiberoptic elements made of AgCl (with lower refractive index). Fibers of outer diameter 1 mm and length of the order of 1 m were flexible and transparent in the spectral range 3–20 μm. Measurements of the power distribution and the transmission losses in the fibers indicated that they behave like core-clad structures, with an effective core diameter 200 μm. These fibers will be extremely useful for many applications in the middle- and far-infrared. © 2003 American Institute of Physics.
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42.81.Bm Fabrication, cladding, and splicing
42.81.Dp Propagation, scattering, and losses; solitons
42.70.Qs Photonic bandgap materials

Experimental demonstration of a high quality factor photonic crystal microcavity

Kartik Srinivasan, Paul E. Barclay, Oskar Painter, Jianxin Chen, Alfred Y. Cho, and Claire Gmachl

Appl. Phys. Lett. 83, 1915 (2003); http://dx.doi.org/10.1063/1.1606866 (3 pages) | Cited 49 times

Online Publication Date: 2 September 2003

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Subthreshold measurements of a photonic crystal (PC) microcavity laser operating at 1.3 μm show a linewidth of 0.10 nm, corresponding to a quality factor (Q) ∼ 1.3×104. The PC microcavity mode is a donor-type mode in a graded square lattice of air holes, with a theoretical Q ∼ 105 and mode volume Veff ∼ 0.25 cubic half-wavelengths in air. Devices are fabricated in an InAsP/InGaAsP multi-quantum-well membrane and are optically pumped at 830 nm. External peak pump power laser thresholds as low as 100 μW are also observed. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.55.Sa Microcavity and microdisk lasers
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
78.66.Fd III-V semiconductors
42.70.Qs Photonic bandgap materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Concept of a liquid-crystal polarization beamsplitter based on binary phase gratings

Jae-Hong Park, Chang-Jae Yu, Jinyool Kim, Sung-Yeop Chung, and Sin-Doo Lee

Appl. Phys. Lett. 83, 1918 (2003); http://dx.doi.org/10.1063/1.1609042 (3 pages) | Cited 27 times

Online Publication Date: 2 September 2003

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We propose a concept of fabricating a liquid-crystal (LC) polarization beamsplitter based on binary phase gratings. The binary grating phenomenon in the LC layer physically originates from two different interfacial interactions at periodically alternating domain boundaries. The periodic LC domains are produced by employing a single-step photoalignment technique which precisely controls the surface orientation of the LC molecules in an alternating homeotropic and hybrid aligned geometry. In this binary configuration, the polarization-separating phase modulation of an input beam is achieved in a wide range of the wavelengths under an applied voltage. The experimental data are consistent with our linearly graded binary model. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings

Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

R. P. Green, A. Krysa, J. S. Roberts, D. G. Revin, L. R. Wilson, E. A. Zibik, W. H. Ng, and J. W. Cockburn

Appl. Phys. Lett. 83, 1921 (2003); http://dx.doi.org/10.1063/1.1609055 (2 pages) | Cited 9 times

Online Publication Date: 2 September 2003

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We report the room-temperature operation of λ ≈ 8.5 μm InGaAs/AlInAs quantum cascade lasers, grown by low-pressure metalorganic vapor phase epitaxy. The necessary control of interfacial abruptness and layer thicknesses was achieved by the use of individually purged vent/run valves and a growth rate of 0.8 μm/h for the active region. Low-temperature threshold current densities of ∼ 1.5 kA cm−2 and a maximum operating temperature of 290 K have been measured in pulsed operation. These values are comparable with those reported for structures of a similar design grown using molecular beam epitaxy. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Ct Interface structure and roughness
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.A- Nucleation and growth

Demonstration of a microelectromechanical tunable asymmetric Fabry–Pérot quantum well modulator

W. S. Rabinovich, T. H. Stievater, N. A. Papanicolaou, D. S. Katzer, and P. G. Goetz

Appl. Phys. Lett. 83, 1923 (2003); http://dx.doi.org/10.1063/1.1606499 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2003

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Asymmetric Fabry–Pérot multiple quantum well modulators can have much higher extinction ratios than are otherwise possible with surface normal devices. This performance comes at the price of very tight tolerances on the epitaxial growth and high sensitivity to temperature and angle of incidence. We demonstrate that a quantum well modulator with an integrated microelectromechanical mirror can remove these sensitivities. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

J. G. Kim, L. Shterengas, R. U. Martinelli, and G. L. Belenky

Appl. Phys. Lett. 83, 1926 (2003); http://dx.doi.org/10.1063/1.1605245 (3 pages) | Cited 38 times

Online Publication Date: 2 September 2003

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We have fabricated and characterized 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 μm apertures. Continuous wave operation up to 500 mW was recorded at 16 °C from 2.7 μm lasers, while 160 mW was obtained from 2.8 μm lasers. Threshold current densities as low as 350 A/cm2 were recorded from 2.7 μm lasers with external quantum efficiencies of 0.26 photon/electrons. The maximum wall-plug efficiency was 9.2% at a current of 2.4 A. A peak power of 2.5 W was recorded in pulsed-current mode operation at 20 °C at 2.7 μm and 2 W at 2.8 μm. Characteristic temperatures of T0 = 71 K and T1 = 86 K were measured from the 2.7 μm devices. T0 = 59 K and T1 = 72 K for the 2.8 μm lasers. The devices have differential series resistances of about 0.18 Ω with estimated thermal resistances of about 5 K/W. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Pk Continuous operation
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Continuous-wave distributed-feedback quantum-cascade lasers on a Peltier cooler

Thierry Aellen, Stéphane Blaser, Mattias Beck, Daniel Hofstetter, Jérôme Faist, and Emilio Gini

Appl. Phys. Lett. 83, 1929 (2003); http://dx.doi.org/10.1063/1.1609044 (3 pages) | Cited 25 times

Online Publication Date: 2 September 2003

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Continuous-wave operation of λ ∼ 9 μm distributed-feedback quantum-cascade lasers is reported up to a temperature of 260 K. Single-frequency emission with a side mode suppression ratio of ≥ 27 dB and with a tuning range of 5 cm−1 between 200 and 245 K (a tunability of −0.078 cm−1/K and −0.764 cm−1/W) is obtained for the junction-down mounted buried heterostructure devices. Uncoated lasers display an output power of up to 18 mW at 180 K and still 1 mW at 250 K. Lasers with high-reflection coated facets could be operated up to 260 K. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
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High-efficiency, high-power, stable 172 nm xenon excimer light source

M. Salvermoser and D. E. Murnick

Appl. Phys. Lett. 83, 1932 (2003); http://dx.doi.org/10.1063/1.1605798 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2003

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Stable, continuous-wave light sources at 172 nm, based on the Xe2∗ excimer molecule, with conversion efficiency of electrical energy to vacuum ultraviolet (VUV) light greater than 50%, are reported. In high-pressure xenon gas, “Saint Elmo’s Fire” corona discharges serve as localized point electron sources with a metal grid at a few kilovolts providing an accelerating electric field. An extended VUV light-emitting region with high-energy conversion efficiency indicates that electron energy loss is predominantly by excitation of Xe atoms rather than by ionization. A room-temperature prototype lamp with variable VUV power to 35 mW/cm2 has been demonstrated. © 2003 American Institute of Physics.
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42.72.Bj Visible and ultraviolet sources
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
52.80.Hc Glow; corona
34.80.Dp Atomic excitation and ionization

Kinetics of hydrogen atoms in high-density CF4/H2 plasmas studied by (2+1)-photon laser-induced fluorescence spectroscopy

K. Sasaki and M. Okamoto

Appl. Phys. Lett. 83, 1935 (2003); http://dx.doi.org/10.1063/1.1609244 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2003

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We measured the distribution of absolute H atom density in high-density, low-pressure CF4 plasmas with the addition of H2 by (2+1)-photon laser-induced fluorescence spectroscopy. The H atom density had hollow-shaped distributions, i.e., the H atom density adjacent to the chamber wall was higher than that in the plasma column. In addition, when the chamber wall was covered with hydrogenated fluorocarbon film, we detected H atoms without the addition of feedstock H2. These experimental results indicate surface production of H atoms from hydrogenated fluorocarbon film. The surface production rate was sensitive to the property of fluorocarbon film. When the property of fluorocarbon film was unified, the surface production rate increased linearly with the pressure of feedstock H2, suggesting a recycling process of H atoms between gas phase and fluorocarbon film as a mechanism of plasma–surface interaction in CF4/H2 plasmas. © 2003 American Institute of Physics.
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52.40.Hf Plasma-material interactions; boundary layer effects
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Low-noise microwave magnetrons by azimuthally varying axial magnetic field

V. B. Neculaes, R. M. Gilgenbach, and Y. Y. Lau

Appl. Phys. Lett. 83, 1938 (2003); http://dx.doi.org/10.1063/1.1609040 (3 pages) | Cited 24 times

Online Publication Date: 2 September 2003

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A technique has been demonstrated to significantly reduce the noise in microwave oven magnetrons. The technique employs permanent magnets to generate an azimuthally varying axial magnetic field. Noise measurements are reported which show dramatic reductions in the noise of kW oven magnetrons operating near 2.45 GHz. The noise reduction near the carrier is some 30 dB. Microwave sidebands are reduced or eliminated. Noise reduction occurs at all anode currents, but is particularly significant at low current near the start-oscillation condition. © 2003 American Institute of Physics.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
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Stimulated resonance Raman scattering from single crystals of a thiophene/phenylene co-oligomer

Hisao Yanagi, Atsutoshi Yoshiki, Shu Hotta, and Shunsuke Kobayashi

Appl. Phys. Lett. 83, 1941 (2003); http://dx.doi.org/10.1063/1.1605233 (3 pages) | Cited 30 times

Online Publication Date: 2 September 2003

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We have investigated the stimulated resonance Raman scattering from single crystals of a thiophene/phenylene co-oligomer. The very narrow lines [full width at half maximum (FWHM) = 11–20 cm−1] are observed in the same spectral regions where the spectrally narrowed emissions (FWHM ≈ 300 cm−1) occur upon excitation with intense laser pulse. We related these modes to the stimulated resonance Raman scattering. Two lines of Raman shifts of 1466 and 1605 cm−1 are of molecular origin. Another line with an energy shift of ∼ 1260 cm−1 from excitation energy, on the other hand, implies the presence of the coherence of crystal origin. The associated split lines accompanying this mode are thought to constitute the longitudinal modes in the Fabry–Pérot cavity naturally formed in the crystals. © 2003 American Institute of Physics.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.30.Jw Organic compounds, polymers

Epitaxial electrodeposition of Cu2O films onto InP(001)

Run Liu, Eric W. Bohannan, Jay A. Switzer, Fumiyasu Oba, and Frank Ernst

Appl. Phys. Lett. 83, 1944 (2003); http://dx.doi.org/10.1063/1.1606503 (3 pages) | Cited 20 times

Online Publication Date: 2 September 2003

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Cu2O (cuprite) films were deposited electrochemically onto InP (001) single-crystal substrates from aqueous solutions at room temperature. X-ray diffraction indicates a unique epitaxial 45°[001] orientation relationship between Cu2O and InP. This reduces the mismatch between corresponding spacings to 2.9%, compared with a mismatch of 27.2% between the lattice parameters of Cu2O and InP. The morphology of the Cu2O film can be influenced via the electrolyte acidity. At a pH of 9.0, Cu2O forms pyramidal islands. At a pH of 12.0, on the other hand, cubelike morphologies of Cu2O are observed. Between a pH of 9.0 and 12.0, the direction of slowest growth changes from 〈111〉 to 〈100〉. In apparent contradiction to the observation of a unique epitaxial orientation relationship, transmission electron microscopy reveals an amorphous oxygen-rich interlayer between the Cu2O and the InP crystal. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Pq Electrodeposition, electroplating
68.35.Ct Interface structure and roughness
68.35.Dv Composition, segregation; defects and impurities
68.37.Lp Transmission electron microscopy (TEM)

Blue photoluminescence of α-Ga2S3 and α-Ga2S3:Fe2+ single crystals

Chang-Sun Yoon, F. D. Medina, L. Martinez, Tae-Young Park, Moon-Seog Jin, and Wha-Tek Kim

Appl. Phys. Lett. 83, 1947 (2003); http://dx.doi.org/10.1063/1.1609254 (3 pages)

Online Publication Date: 2 September 2003

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α-Ga2S3 and α-Ga2S3:Fe2+ single crystals were grown by the two-zone sublimation method. The optical energy gaps of α-Ga2S3 and α-Ga2S3:Fe2+ at 10 K were found to be 3.440 and 3.392 eV, respectively. From the absorption spectra of α-Ga2S3:Fe2+, the crystal field parameter Dq of 345 cm−1 and Racah parameters B of 700 and C of 3365 cm−1 were obtained for tetrahedral Fe2+ ions. From the photoluminescence spectra at 10 K, the blue and red emissions at 424 and 643 nm, respectively, for α-Ga2S3 and the violet and yellow emissions at 400 and 580 nm, respectively, for α-Ga2S3:Fe2+ were observed. All the emission lines observed in the photoluminescence spectra were identified. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.70.Ch Crystal and ligand fields
78.30.Hv Other nonmetallic inorganics
78.40.Fy Semiconductors

Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

Takahito Ono, Dong F. Wang, and Masayoshi Esashi

Appl. Phys. Lett. 83, 1950 (2003); http://dx.doi.org/10.1063/1.1608485 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2003

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The nanomechanical properties of single-crystalline silicon cantilevers as resonating elements are investigated in ultra-high vacuum. Flash heating the single-crystalline silicon cantilever at 1000 °C in ultra-high vacuum dramatically reduced the mechanical energy dissipation of the oscillating cantilever due to the removal of contaminants and natural oxide and reconstruction of the silicon surface. However, the reconstructed silicon surface is not stable and mechanical properties change depending on the surface state. The Q-factor and influence of gas adsorption on ultrathin single crystalline silicon resonators having (100) and (111)-oriented surfaces are presented. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
81.05.Cy Elemental semiconductors
68.43.Mn Adsorption kinetics

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau, N. E. B. Cowern, F. Cristiano, P. Calvo, N. Cherkashin, Y. Lamrani, and A. Claverie

Appl. Phys. Lett. 83, 1953 (2003); http://dx.doi.org/10.1063/1.1608489 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2003

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The evolution of {113} defects as a function of time and depth within Si implant-generated defect profiles has been investigated by transmission electron microscopy. Two cases are considered: one in which the {113} defects evolve into dislocation loops, and the other, at lower dose and energy, in which the {113} defects grow in size and finally dissolve. The study shows that dissolution occurs preferentially at the near-surface side of the defect band, indicating that the silicon surface is the principal sink for interstitials in this system. The results provide a critical test of the ability of physical models to simulate defect evolution and transient enhanced diffusion. © 2003 American Institute of Physics.
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66.30.Lw Diffusion of other defects
68.37.Lp Transmission electron microscopy (TEM)
61.72.Lk Linear defects: dislocations, disclinations

Role of the indium–carbon interaction on In diffusion and activation in Si

Antonino La Magna, Silvia Scalese, Paola Alippi, Giovanni Mannino, Vittorio Privitera, Massimo Bersani, and Christoph Zechner

Appl. Phys. Lett. 83, 1956 (2003); http://dx.doi.org/10.1063/1.1609253 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2003

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We present a theoretical approach to the study of C influence on In diffusion and activation in Si. We consider a kick-out type model for the defect driven migration of both species, while we assume that InC complexes form by the interaction between the defect-impurity pairs and the substitutional species. Moreover, we introduce a double-level activation model in order to calculate the active fraction of the diffusion profiles. In parameters are derived both from ab initio calculations and from fitting the experimental diffusion profiles. The modeling is used in order to explain experimental data relative to In implanted into Si substrates containing different C contamination background. © 2003 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
66.30.J- Diffusion of impurities

Mechanism of reliability failure in Cu interconnects with ultralow-κ materials

N. L. Michael, Choong-Un Kim, P. Gillespie, and R. Augur

Appl. Phys. Lett. 83, 1959 (2003); http://dx.doi.org/10.1063/1.1609242 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2003

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This letter presents evidence of an oxidation-driven failure mechanism in Cu interconnects integrated with ultralow-κ materials. It is found that the open pore structure of ultralow-κ materials allows oxidants in the ambient to reach the interconnect structure and induce oxidation of Cu. In contrast to a normal oxidation process where Cu is in contact with the oxidant, oxidation is controlled by the outdiffusion of Cu through the barrier layers, Ta and SiCN, to form Cu oxide in the pores of the dielectric material. The loss of Cu by outdiffusion induces extensive voiding and subsequent failure in Cu interconnects. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
81.65.Mq Oxidation
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Microstructural influences on stress migration in electroplated Cu metallization

A. Sekiguchi, J. Koike, and K. Maruyama

Appl. Phys. Lett. 83, 1962 (2003); http://dx.doi.org/10.1063/1.1609238 (3 pages) | Cited 13 times

Online Publication Date: 2 September 2003

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Stress migration in advanced Cu interconnects leads to device failure and to poor production throughput. In this work, microstructural effects on stress-migration resistance were investigated in two types of electroplated Cu metallization having a 〈111〉 texture and a random texture. Transmission electron microscopy showed incoherent twins in the 〈111〉 textured films whereas coherent twins in the random textured films. The incoherent twins were found to accompany stress-induced voids because of a weak bonding at twin interfaces. Unlike conventional Al interconnects, a strong 〈111〉 texture should be avoided to minimize stress-migration failure in Cu interconnects. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
61.72.Mm Grain and twin boundaries

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

J. P. O’Neill, I. M. Ross, A. G. Cullis, T. Wang, and P. J. Parbrook

Appl. Phys. Lett. 83, 1965 (2003); http://dx.doi.org/10.1063/1.1606105 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2003

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We report a study of the morphology and composition of InxGa1−xN/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron microscopy. Microstructural analysis was performed to investigate the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100 pA/cm2, was found to induce significant nanoclustering of indium within the multiple-quantum wells. These findings highlight the need for caution when reporting the presence of indium-rich clusters within InGaN/GaN multiple-quantum wells studied in the transmission electron microscope. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
61.80.Fe Electron and positron radiation effects
68.37.Lp Transmission electron microscopy (TEM)
61.82.Fk Semiconductors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Strong anti-Stokes luminescence from H+-irradiated diamond

Y. Xu, H. Naramoto, K. Narumi, K. Miyashita, T. Kamiya, and T. Sakai

Appl. Phys. Lett. 83, 1968 (2003); http://dx.doi.org/10.1063/1.1608465 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2003

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A strong anti-Stokes luminescence (ASL) peak associated with 3H color centers is observed from H+-irradiated diamond, when the diamond is excited at 514.5 nm of wavelength. The characteristics of 3H emission spectrum are discussed in terms of the vibrational–electronic interaction in diamond. We consider that the ASL peak is due to simultaneous phonon absorption with photon absorption in the process of electronic excitations. According to the mechanism of the ASL, some weak ASL peaks at the high-energy side of the strong ASL peak have been also found. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.80.Jh Ion radiation effects
61.72.J- Point defects and defect clusters
81.05.U- Carbon/carbon-based materials

X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Robert S. Okojie, Thomas Holzheu, XianRong Huang, and Michael Dudley

Appl. Phys. Lett. 83, 1971 (2003); http://dx.doi.org/10.1063/1.1606497 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2003

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High-resolution x-ray diffractometry was used to measure the lattice mismatch and misorientation in n-type 4H-SiC epilayers grown homoepitaxially on p-type 4H-SiC as function of different nitrogen doping levels. The spatially averaged lattice mismatch increased from 1.0×10−5 to 4.0×10−5, 6.3×10−5, 8.8×10−5, and 11.6×10−5 in epilayers doped 4.1×1017 cm−3, 2.6×1018 cm−3, 1.7×1019 cm−3, 2.2×1019, and 4×1019, respectively. The resolved multiple subsidiary peaks in the rocking curve of the epilayers doped 2.2×1019 and 4×1019 cm−3 are likely due to high density of domain boundaries. The increase in mismatch with doping, is attributed to the substitutional nitrogen incorporated preferentially in the host carbon sites of the 4H-SiC epilayer. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Mm Grain and twin boundaries
68.60.Bs Mechanical and acoustical properties

Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E. M. Kaidashev, M. Lorenz, and M. Grundmann

Appl. Phys. Lett. 83, 1974 (2003); http://dx.doi.org/10.1063/1.1609251 (3 pages) | Cited 159 times

Online Publication Date: 2 September 2003

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Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm−1, recently assigned to N incorporation [A. Kaschner et al., Appl. Phys. Lett. 80, 1909 (2002)], were observed for Fe, Sb, and Al doped films, intentionally grown without N. The mode at 277 cm−1 occurs also for Ga doped films. These modes thus cannot be related directly to N incorporation. Instead, we suggest host lattice defects as their origin. Further additional modes at 531, 631, and 720 cm−1 seem specific for the Sb, Ga, and Fe dopants, respectively. Li doped ZnO did not reveal additional modes. © 2003 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

G. Suryanarayanan, Anish A. Khandekar, Thomas F. Kuech, and Susan E. Babcock

Appl. Phys. Lett. 83, 1977 (2003); http://dx.doi.org/10.1063/1.1609231 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2003

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Substantial defect reduction was achieved in InAs/GaAs by lateral epitaxial overgrowth in which InAs was grown on mask-patterned (100) GaAs with stripe-shaped windows of various widths by metalorganic chemical vapor deposition. The InAs growth morphology, crystal quality, and microstructure were evaluated using double-crystal x-ray rocking curves and scanning and transmission electron microscopy. The microstructure of the InAs grown on mask-free control samples was comprised of micron-scale misoriented grains and dislocations at a density of 1011 cm−2. As the width of the mask openings decreased to 0.8 μm, the rocking curves narrowed, grain boundaries disappeared and the dislocation density decreased to <107 cm−2. The distribution of the remaining defects suggests substantial changes in microstructural development when the window width is ≲1 μm. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Lk Linear defects: dislocations, disclinations
61.72.Mm Grain and twin boundaries
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Temperature stability for silicon-based photonic band-gap structures

S. M. Weiss, M. Molinari, and P. M. Fauchet

Appl. Phys. Lett. 83, 1980 (2003); http://dx.doi.org/10.1063/1.1609249 (3 pages) | Cited 20 times

Online Publication Date: 2 September 2003

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A method for minimizing thermal effects on silicon-based photonic band-gap (PBG) structures is demonstrated. The reflectance resonance positions of as-anodized one-dimensional porous silicon (PSi) PBG microcavities exhibit 3 nm redshifts when heated up to 100 °C, which significantly alters the light propagation properties of the structures. By carefully controlling the oxidation conditions of the PSi microcavities, it is possible to reduce the shift to less than 0.5 nm. High-resolution x-ray diffraction experiments directly link variations of the silicon strain during heating to shifts of the reflectance resonance. The pressure change induced by the proper oxidation level can compensate for the effect of the temperature change and, thus, stabilize the resonance position. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.20.-e Optical properties of bulk materials and thin films
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