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15 Sep 2003

Volume 83, Issue 11, pp. 2091-2291

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2244 (2003); http://dx.doi.org/10.1063/1.1610259 (3 pages)

X.-M. Meng, Y. Jiang, J. Liu, C.-S. Lee, I. Bello, and S.-T. Lee
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Ultrahigh magnetic field sensitivity in laminates of TERFENOL-D and Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals

Shuxiang Dong, Jie-Fang Li, and D. Viehland

Appl. Phys. Lett. 83, 2265 (2003); http://dx.doi.org/10.1063/1.1611276 (3 pages) | Cited 140 times

Online Publication Date: 9 September 2003

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It has been found that laminate composites of longitudinally magnetized magnetostrictive TERFENOL-D and a transversely poled piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 crystal have extremely high magnetic field sensitivity. At room temperature, an output voltage with an exceptionally good linear response to an ac magnetic field Hac was found over the range of 10−11<Hac<10−3 T. © 2003 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
77.65.-j Piezoelectricity and electromechanical effects

Room-temperature Si single-electron memory fabricated by nanoimprint lithography

Wei Wu, Jian Gu, Haixiong Ge, Christopher Keimel, and Stephen Y. Chou

Appl. Phys. Lett. 83, 2268 (2003); http://dx.doi.org/10.1063/1.1610814 (3 pages) | Cited 19 times

Online Publication Date: 9 September 2003

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We report the design, fabrication, and characterization of room-temperature Si single-electron memories using nanoimprint lithography (NIL). The devices consist of a narrow channel metal–oxide–semiconductor field-effect transistor and a sub-10-nm storage dot, which is located between the channel and the gate. The memories operate at room temperature by charging and discharging one electron in or out of the dot. The charge retention time is up to two days. NIL is shown to be tailored for nanodevice fabrication. By using NIL as a nanolithography tool, the single-electron memory is more feasible for mass production. © 2003 American Institute of Physics.
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85.35.Gv Single electron devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.16.Nd Micro- and nanolithography
81.07.Ta Quantum dots

Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Y. Irokawa, B. Luo, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, S. S. Park, and Y. J. Park

Appl. Phys. Lett. 83, 2271 (2003); http://dx.doi.org/10.1063/1.1611624 (3 pages) | Cited 11 times

Online Publication Date: 9 September 2003

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p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, VF was ∼ 5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance (RON) was ∼ 5 mΩ cm2 at 300 K, with an ideality factor of ∼ 2 and activation energy for low forward current density of ∼ 1.6 eV. This is consistent with carrier recombination in the space charge region via a midgap deep level. The figure-of-merit, VB2/RON, where VB is the reverse breakdown voltage, was 0.32 MW cm−2. The reverse recovery time was ⩽ 600 ns at 300 K. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers show the advantages of employing a GaN substrate to make a true vertical transport geometry device. © 2003 American Institute of Physics.
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73.40.Ei Rectification
73.61.Ey III-V semiconductors
85.30.Kk Junction diodes
73.20.At Surface states, band structure, electron density of states
73.40.Ty Semiconductor-insulator-semiconductor structures
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