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15 Sep 2003

Volume 83, Issue 11, pp. 2091-2291

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2244 (2003); http://dx.doi.org/10.1063/1.1610259 (3 pages)

X.-M. Meng, Y. Jiang, J. Liu, C.-S. Lee, I. Bello, and S.-T. Lee
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Ferroelectric epitaxial nanocrystals obtained by a self-patterning method

I. Szafraniak, C. Harnagea, R. Scholz, S. Bhattacharyya, D. Hesse, and M. Alexe

Appl. Phys. Lett. 83, 2211 (2003); http://dx.doi.org/10.1063/1.1611258 (3 pages) | Cited 70 times

Online Publication Date: 9 September 2003

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Lead zirconate titanate nanoislands were obtained by a self-patterning method making use of the instability of ultrathin films during high-temperature treatments. After high-temperature annealing, the as-deposited film breaks into islands with a narrow size distribution. The single-crystal nanoislands were studied by scanning and high-resolution transmission electron microscopy, atomic force microscopy, and x-ray diffraction. They show an epitaxial relationship with the Nb-doped (001) SrTiO3 substrate. The ferroelectric switching of several individual islands was investigated by piezoresponse force microscopy. © 2003 American Institute of Physics.
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77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.46.-w Structure of nanoscale materials
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)

Ferroelectricity in Mn-implanted CdTe

D. J. Fu, J. C. Lee, S. W. Choi, C. S. Park, G. N. Panin, T. W. Kang, and X. J. Fan

Appl. Phys. Lett. 83, 2214 (2003); http://dx.doi.org/10.1063/1.1610789 (3 pages) | Cited 10 times

Online Publication Date: 9 September 2003

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CdTe:Mn was prepared by implantation of CdTe with 200 keV Mn ions with a dose of 5×1016 cm−2, which produced an insulating layer in the surface region. Ferroelectric characterization of the implanted sample revealed a clear hysteresis in its polarization–voltage curves. The remnant polarization of CdTe:Mn amounts to 0.64 μC/cm2 at 400 Hz, and it decreases with increasing temperature in a continuous and diffusive manner. Capacitance measurement demonstrated a maximum capacitance at 140 °C, and fitting of the data with Curie–Weiss law shows the occurrence of a second-order-type phase transition. The ferroelectricity is accounted for by the cation size difference in CdTe:Mn. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
61.72.uj III-V and II-VI semiconductors

Observation of ferroelectromagnetic nature in rare-earth-substituted bismuth iron titanate

A. Srinivas, Dong-Wan Kim, Kug Sun Hong, and S. V. Suryanarayana

Appl. Phys. Lett. 83, 2217 (2003); http://dx.doi.org/10.1063/1.1610255 (3 pages) | Cited 25 times

Online Publication Date: 9 September 2003

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Rare earth ions; Nd, Sm, Gd, and Dy, are substituted at the bismuth site in bismuth iron titanate, a four-layered compound which belongs to bismuth layer structured ferroelectrics. A solid-state sintering route was adopted in synthesizing the materials. X-ray diffraction indicates the formation of single-phase materials. The dielectric measurements showed the anomalies at high temperatures. Dynamic magnetoelectric measurements showed magnetoelectric output at room temperature and at low temperatures. Thus, the material is ferroelectromagnetic in nature. © 2003 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
77.80.-e Ferroelectricity and antiferroelectricity
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Ferroelectric switching of strontium–barium–niobate crystals in pulsed fields

T. Volk, D. Isakov, L. Ivleva, and M. Wöhlecke

Appl. Phys. Lett. 83, 2220 (2003); http://dx.doi.org/10.1063/1.1606871 (3 pages) | Cited 18 times

Online Publication Date: 9 September 2003

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In strontium–barium–niobate (SBN) polarization and switching processes under pulsed field differ from those in model ferroelectrics. In most SBN crystals, the polarization changes smoothly with relaxation times up to seconds even under fields strongly exceeding the coercive field. The kinetics are described with a power law. In some samples of a variety of compositions faster changes have been observed, but their characteristics fundamentally differ from those in model ferroelectrics. The peculiarities are evidently caused by the relaxor properties of SBN. © 2003 American Institute of Physics.
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77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

Chih Hang Tung, Kin Leong Pey, Lei Jun Tang, M. K. Radhakrishnan, Wen He Lin, Felix Palumbo, and Salvatore Lombardo

Appl. Phys. Lett. 83, 2223 (2003); http://dx.doi.org/10.1063/1.1611649 (3 pages) | Cited 21 times

Online Publication Date: 9 September 2003

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A physical model has been developed which complies with the experimental observation on the failure mechanism of ultrathin gate oxide breakdown during constant voltage stress. Dynamic equilibrium needs to be established between the percolation conductive path and the dielectric breakdown induced epitaxy (DBIE) formation during gate dielectric breakdown transient. The model is capable of linking the percolation model, soft breakdown, and hard breakdown to the DBIE growth for a variety of stress conditions and gate oxide thickness without involving new empirical parameters. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
77.22.Jp Dielectric breakdown and space-charge effects
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Low dielectric constant porous diamond films formed by diamond nanoparticles

Hiroyuki Sakaue, Noriyoshi Yoshimura, Shoso Shingubara, and Takayuki Takahagi

Appl. Phys. Lett. 83, 2226 (2003); http://dx.doi.org/10.1063/1.1609659 (3 pages) | Cited 4 times

Online Publication Date: 9 September 2003

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The reduction of the dielectric constant of interlayer insulating films in ultra large scale integrated circuits is an important factor in improving resistance-capacitance delay. A “porous diamond” film, composed of nanoscale diamond particles, is proposed as a material with a low dielectric constant, and is prepared by spin coating a 5% diamond colloidal solution mixed by 4 nm diamond nanoparticles in purified water. High-resolution scanning electron microscope observations show that the film contains nanoscale pores. The mechanical strength and adhesion of the porous diamond films were improved by forming the chemical bonds between diamond nanoparticles and also between the nanoparticles and the substrate. The chemical bonds were created by introducing a bi-functional silane coupler such as hexachlorodisiloxan molecules followed by annealing at 300 °C. A low dielectric constant of 1.63, estimated from the refractive index, was obtained by using high purity diamond nanoparticles after the reinforcing process by hexachlorodisiloxan. The porous diamond films are expected to have a higher thermal stability and a superior mechanical strength compared with other porous low dielectric constant materials. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.60.Bs Mechanical and acoustical properties
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
81.40.Gh Other heat and thermomechanical treatments
68.60.Dv Thermal stability; thermal effects

Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

Kazuhiko Yamamoto, Shigenori Hayashi, Masaaki Niwa, Masayuki Asai, Sadayoshi Horii, and Hironobu Miya

Appl. Phys. Lett. 83, 2229 (2003); http://dx.doi.org/10.1063/1.1609246 (3 pages) | Cited 42 times

Online Publication Date: 9 September 2003

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The electrical and physical properties of thin hafnium oxide (HfO2) films fabricated by a remote plasma oxidation of a hafnium metal were investigated. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65 nm with leakage current density of 2.7 A/cm2 at the gate bias of Vfb-1 (V). The HfO2 thickness dependence of the EOT demonstrated that the permittivity of 19 for HfO2 layer and the interfacial layer thickness of 0.36 nm. X-ray photoelectron spectroscopy study revealed that the oxygen radicals oxidize the Hf metal selectively than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.65.Mq Oxidation
52.77.-j Plasma applications
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)
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