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15 Sep 2003

Volume 83, Issue 11, pp. 2091-2291

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Appl. Phys. Lett. 83, 2244 (2003); http://dx.doi.org/10.1063/1.1610259 (3 pages)

X.-M. Meng, Y. Jiang, J. Liu, C.-S. Lee, I. Bello, and S.-T. Lee
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High sensitive detection of near-infrared absorption by surface plasmon resonance

Akifumi Ikehata, Xiaoling Li, Tamitake Itoh, Yukihiro Ozaki, and Jian-Hui Jiang

Appl. Phys. Lett. 83, 2232 (2003); http://dx.doi.org/10.1063/1.1610812 (3 pages) | Cited 7 times

Online Publication Date: 9 September 2003

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In this letter we report on an operative method for high sensitive measurement of near-infrared absorption based on a surface plasmon resonance (SPR) technique. By coupling with the SPR of a gold film, an absorption band of water near 5173 cm−1 assigned to a combination of the stretching and bending modes of OH groups is enhanced over 100 times compared with a case without the gold film. In addition, positive and negative enhancements of an absorption depending on the thickness of a gold film were observed as predicted by H. Kano et al. [Appl. Opt. 33, 5166 (1994)]. These experimental results are mathematically well reproduced by use of Fresnel multiple-reflection theory. © 2003 American Institute of Physics.
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78.30.-j Infrared and Raman spectra
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
68.35.Ja Surface and interface dynamics and vibrations

Stark-shift modulation absorption spectroscopy of single quantum dots

Benito Alén, Florian Bickel, Khaled Karrai, Richard J. Warburton, and Pierre M. Petroff

Appl. Phys. Lett. 83, 2235 (2003); http://dx.doi.org/10.1063/1.1609243 (3 pages) | Cited 71 times

Online Publication Date: 9 September 2003

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Excitonic interband optical transitions within single InAs self-assembled quantum dots have been directly observed in a transmission experiment at 4.2 K. Using Stark shift, the excitonic energy levels of a single quantum dot are tuned into resonance with a narrow-band laser line. The Stark shift is also modulated at low frequencies. Relative changes in transmission can be detected this way down to one part per million. The oscillator strength as well the homogeneous linewidth of the transition is obtained. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.20.Jq Electro-optical effects
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Sharp exciton emission from single InAs quantum dots in GaAs nanowires

Nikolay Panev, Ann I. Persson, Niklas Sköld, and Lars Samuelson

Appl. Phys. Lett. 83, 2238 (2003); http://dx.doi.org/10.1063/1.1611261 (3 pages) | Cited 40 times

Online Publication Date: 9 September 2003

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We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The photoluminescence measurements showed rich spectra consisting of sharp lines with energies and excitation power dependency behavior very similar to that observed for Stranski–Krastanow-grown InAs/GaAs quantum dots. By reducing the excitation power density we were able to obtain a quantum dot spectrum consisting of only one single sharp line—the exciton line. © 2003 American Institute of Physics.
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73.21.La Quantum dots
78.67.Hc Quantum dots
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Oxide-assisted growth and characterization of Ge/SiOx nanocables

Xiang-Min Meng, Jun-Qing Hu, Yang Jiang, Chun-Sing Lee, and Shuit-Tong Lee

Appl. Phys. Lett. 83, 2241 (2003); http://dx.doi.org/10.1063/1.1609653 (3 pages) | Cited 25 times

Online Publication Date: 9 September 2003

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Germanium/SiOx nanocables were prepared via simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5%H2 as the carrier gases. The product was characterized by scanning electron microscopy, transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy system, and high-resolution TEM. The Ge/SiOx nanocables had diameters in the range of 60–150 nm and lengths of several tens of micrometers. The growth of the Ge/SiOx nanocables was considered to occur via the combination of oxide-assisted growth and vapor–liquid–solid processes, and the composition of the nanocables was determined by the relative supply of the Ge and SiO vapors. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.37.Lp Transmission electron microscopy (TEM)
81.07.Bc Nanocrystalline materials
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Synthesis and characterization of ZnS bicrystal nanoribbons

X.-M. Meng, Y. Jiang, J. Liu, C.-S. Lee, I. Bello, and S.-T. Lee

Appl. Phys. Lett. 83, 2244 (2003); http://dx.doi.org/10.1063/1.1610259 (3 pages) | Cited 24 times

Online Publication Date: 9 September 2003

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Here, we report a form of nanostructures bicrystal nanoribbons. Zinc sulfide (ZnS) bicrystal nanoribbons were prepared via simple thermal evaporation of a powder mixture of ZnS and SiO. The product was characterized with transmission electron microscopy (TEM), high-resolution TEM, and electron energy loss spectroscopy. The ZnS bicrystal nanoribbons have widths of 50–500 nm and lengths of several tens of micrometers. Two kinds of growth direction, i.e. [−1−21] and [−1−31], have been found. The growth of the ZnS bicrystal nanoribbons was considered to involve a combination of oxide-assisted and vapor-liquid-solid processes. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
68.35.Ct Interface structure and roughness
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects

Kazunari Ozasa, Yoshinobu Aoyagi, Akihiko Yamane, and Yoshio Arai

Appl. Phys. Lett. 83, 2247 (2003); http://dx.doi.org/10.1063/1.1604464 (3 pages) | Cited 5 times

Online Publication Date: 9 September 2003

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Marked enhancement of photoluminescence of InGaAs/GaAs quantum dots (QDs) was observed by the nanoindentation of the light-collecting fiber nanoprobe onto the sample surface. In order to analyze its mechanism, calculations of the nanoprobe-induced strain and the energy-band profiles in the bulk GaAs surrounding InGaAs QDs have been performed on the bases of linear continuum elastic theory and six-band strain Hamiltonian. The calculations have revealed that the confinement potential for light holes was generated by the nanoprobe indentation. The results obtained in this study show that nanometer-scale strain modulation by nanoprobe indentation has potential for the investigation of semiconductor nanostructure physics. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
62.20.M- Structural failure of materials
62.20.Qp Friction, tribology, and hardness

Carrier–carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

K. Matsuda, K. Ikeda, T. Saiki, H. Saito, and K. Nishi

Appl. Phys. Lett. 83, 2250 (2003); http://dx.doi.org/10.1063/1.1609662 (3 pages) | Cited 19 times

Online Publication Date: 9 September 2003

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We describe carrier–carrier interaction in self-assembled In0.5Ga0.5As quantum dots (QDs) at room temperature. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density are investigated through near-field single quantum dot photoluminescence spectroscopy. From the viewpoint of excitation density dependent spectral broadening of the ground state emission, we discuss the dephasing process in QDs due to Coulomb interaction. © 2003 American Institute of Physics.
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73.21.La Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation

Q. Wan, K. Yu, T. H. Wang, and C. L. Lin

Appl. Phys. Lett. 83, 2253 (2003); http://dx.doi.org/10.1063/1.1612899 (3 pages) | Cited 143 times

Online Publication Date: 9 September 2003

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Tetrapod-like zinc oxide (ZnO) nanostructures can be synthesized by rapid heating metal zinc pellet at 900 °C under air ambient. Catalyst, vacuum, and carrying gas are not necessary, and more importantly, it is a volcanic process for rapid and mass production. The turn-on field of the synthesized tetrapod-like ZnO nanostructures is found to be as low as 1.6 V/μm at the current density of 1 μA/cm2. These ZnO nanostructures are technologically useful for vacuum electron devices because they can be easily and economically synthesized and deposited on large substrates. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

H. S. Lee, J. Y. Lee, T. W. Kim, and M. D. Kim

Appl. Phys. Lett. 83, 2256 (2003); http://dx.doi.org/10.1063/1.1612894 (3 pages) | Cited 5 times

Online Publication Date: 9 September 2003

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The strain effects in and the crystal structures of self-assembled InAs/GaAs quantum dots (QDs) were investigated by using transmission electron microscopy (TEM). The in-plane lattice constant of the InAs QDs was larger than that of the GaAs substrate, and the vertical lattice constant of the InAs QDs was smaller than that of the InAs bulk. The variation of the lattice constant for the InAs QD originated from the strain effect. A schematic diagram of a strained InAs QD based on the TEM results, indicative of the strain distribution around the QD, is presented. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Lp Transmission electron microscopy (TEM)

Narrow features in metals at the interfaces between different etch resists

Vikram C. Sundar and Joanna Aizenberg

Appl. Phys. Lett. 83, 2259 (2003); http://dx.doi.org/10.1063/1.1611640 (3 pages) | Cited 3 times

Online Publication Date: 9 September 2003

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The ability to create structures on length scales below 100 nm easily is a challenging feat. We report here a facile technique for the fabrication of such structures in gold (Au) with feature sizes smaller than 50 nm, utilizing two families of Au etch resists in conjunction. The first resist family consists of self-assembled monolayers (SAMs) of alkane thiols on Au, which provide substantial resistance against cyanide etch solutions. The second class consists of metals deposited on the surface of Au, which also provide similar resistance of the Au film to CN etchants but are not conducive for the formation of SAMs. Selective etching is initiated at the interface between these resists, proceeds into the Au layer, and results in narrow trenches in the Au film. Our protocol allows for the sequential removal of both resists and thus permits the creation of planar Au surfaces with well-defined sub-50-nm etch patterns. © 2003 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.16.Dn Self-assembly

Disorder–induced localized states in InAs/GaAs multilayer quantum dots

M. Gurioli, S. Sanguinetti, E. Grilli, M. Guzzi, S. Taddei, A. Vinattieri, M. Colocci, P. Frigeri, and S. Franchi

Appl. Phys. Lett. 83, 2262 (2003); http://dx.doi.org/10.1063/1.1609652 (3 pages) | Cited 1 time

Online Publication Date: 9 September 2003

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We have investigated in detail the dependence of the photoluminescence decay times in stacked quantum dot (QD) structures, showing that they strongly depend on the emission energy. We propose that the dispersion of the lifetimes has to be related to the presence of vertical disorder in the quantum dot column. Due to the disorder the energy distribution of the carrier extended states shrinks and localized states are created in the tails. This idea is supported by a theoretical model, which takes into account the presence of a vertical disorder along the QD columns. © 2003 American Institute of Physics.
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73.21.La Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
71.23.An Theories and models; localized states
71.55.Jv Disordered structures; amorphous and glassy solids
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