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15 Sep 2003

Volume 83, Issue 11, pp. 2091-2291

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2244 (2003); http://dx.doi.org/10.1063/1.1610259 (3 pages)

X.-M. Meng, Y. Jiang, J. Liu, C.-S. Lee, I. Bello, and S.-T. Lee
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Recording and readout mechanisms of super-resolution near-field structure disk with a silver oxide mask layer

Yung-Chiun Her, Yuh-Chang Lan, Wei-Chih Hsu, and Song-Yeu Tsai

Appl. Phys. Lett. 83, 2136 (2003); http://dx.doi.org/10.1063/1.1609256 (3 pages) | Cited 4 times

Online Publication Date: 9 September 2003

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The chemical decomposition of AgOx sandwiched between two ZnS–SiO2 protective layers was an irreversible process. We confirmed that a hollow Ag cylinder, or ring, serving as an aperture, was formed and small Ag particles were precipitated in the center region during the recording process. The small aperture can significantly reduce the laser spot size during the readout process and the strong near-field interaction between precipitated Ag particles and subwavelength marks can effectively enhance the readout signal. That clarifies both the super-resolution effect and the near-field interaction in the super-resolution near-field structure disk. © 2003 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks

Two stage oxidation in epitaxial Ni (111)/GaN (0001) thin films

H. C. Kang, S. H. Seo, H. W. Jang, D. H. Kim, and D. Y. Noh

Appl. Phys. Lett. 83, 2139 (2003); http://dx.doi.org/10.1063/1.1610248 (3 pages) | Cited 4 times

Online Publication Date: 9 September 2003

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We present the oxidation process of epitaxial Ni (111)/GaN (0001) thin films studied by in situ synchrotron x-ray scattering, scanning electron microscopy, and transmission electron microscopy. By monitoring the evolution of the Ni (111) Bragg reflection, we reveal that two distinct oxidation processes occur. Initially, a continuous NiO layer of about 50 Å thickness is formed on the surface of Ni. The planar oxide layer saturates immediately and passivates the film from further surface oxidation. From this stage, the oxidation proceeds by means of the growth of surface oxide islands. The Ni atoms diffuse out through the defect sites running vertically through the initial oxide layer to form the oxide islands. Voids are generated underneath the oxide layer in this process. The oxide in the second stage grows logarithmically in time with the activation energy of about 0.15 eV. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
68.35.Ct Interface structure and roughness
68.35.Dv Composition, segregation; defects and impurities
68.47.De Metallic surfaces
68.47.Fg Semiconductor surfaces
81.05.Ea III-V semiconductors
78.70.Ck X-ray scattering
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Thermoelectric cooling at cryogenic temperatures

S. R. Harutyunyan, V. H. Vardanyan, A. S. Kuzanyan, V. R. Nikoghosyan, S. Kunii, K. S. Wood, and A. M. Gulian

Appl. Phys. Lett. 83, 2142 (2003); http://dx.doi.org/10.1063/1.1610810 (3 pages)

Online Publication Date: 9 September 2003

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Experimental results demonstrating Peltier cooling below 10 K are reported, using crystals of the thermoelectric cerium hexaboride (CeB6). Direct measurements of the Peltier cooling showed δT up to ∼0.2 K in magnitude at T ∼ 4–5 K. All three kinetic parameters: resistivity (ρ), heat conductivity (k), and Seebeck coefficient (S), characterizing the thermoelectric figure of merit ZT = S2T/ρk, were measured, giving high-confidence results. © 2003 American Institute of Physics.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
72.15.Jf Thermoelectric and thermomagnetic effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys

Intense ultraviolet cathodoluminescence at 318 nm from Gd3+-doped AlN

Ulrich Vetter, Jan Zenneck, and Hans Hofsäss

Appl. Phys. Lett. 83, 2145 (2003); http://dx.doi.org/10.1063/1.1605237 (3 pages) | Cited 45 times

Online Publication Date: 9 September 2003

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We present investigations of Gd-implanted aluminum nitride, studied with cathodoluminescence (CL) as well as time-resolved CL in the temperature range 12–300 K. Luminescence due to intra-4f electron transitions of Gd3+ is dominated by the 6P7/2→8S7/2 transition between the first excited state and the ground state of Gd3+ detected at around 318 nm. Time-resolved CL of the 6P7/2 level monitoring the 6P7/2→8S7/2 transition shows a temperature-dependent lifetime which decreases from 0.76 ms at 12 K to 0.69 ms at 300 K, in contrast to an increasing intensity of the 6P7/2→8S7/2 transition by a factor of more than 3.5 in the same temperature range. The decay is of the Inokuti–Hirayama-type indicating energy transfer between Gd3+ ions. Due to the overall weak splitting of the 6P7/2 and 8S7/2 multiplets phonon replica with energies of 100 and 588 cm−1 can be assigned. © 2003 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
81.05.Ea III-V semiconductors
71.55.Eq III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques

D. T. Dekadjevi, C. Wiemer, S. Spiga, S. Ferrari, M. Fanciulli, G. Pavia, and A. Gibaud

Appl. Phys. Lett. 83, 2148 (2003); http://dx.doi.org/10.1063/1.1610792 (3 pages)

Online Publication Date: 9 September 2003

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We investigate the formation, crystallinity, size, and depth distribution of Sb nanoclusters in thin SiO2 matrix by grazing incidence x-ray diffraction (GIXRD) and reflectivity (GIXRR). The complementarity of these two techniques reveals the formation of Sb nanocrystals after a rapid thermal treatment at 1000 °C and their depth distribution. The implantation profile is found to have its maximum centered in the middle of the SiO2 layer. After thermal treatment, the Sb atom redistribution, monitored by the variation in the electron density profile obtained by GIXRR, corresponds to the formation of metallic Sb nanoclusters, as confirmed by transmission electron microscopy (TEM) and GIXRD. The cluster distribution within the SiO2 layer presents a maximum at the center of the layer and their average diameter is 67±3 Å. The results are in agreement with TEM analyses. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)

Evidence for energy coupling from the Si–D vibration mode to the Si–Si and Si–O vibration modes at the SiO2/Si interface

Zhi Chen, Jun Guo, and Pangleen Ong

Appl. Phys. Lett. 83, 2151 (2003); http://dx.doi.org/10.1063/1.1611623 (3 pages) | Cited 4 times

Online Publication Date: 9 September 2003

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In order to verify Van de Walle and Jackson’s theory on the isotope effect of the Si–H/D bonds resistant to hot-electron excitation [C. G. Van de Walle and W. B. Jackson, Appl. Phys. Lett., 69, 2441 (1996)], we measured the Si–H, Si–D, and other vibrational modes in the oxidized silicon wafers annealed in hydrogen and deuterium using Fourier-transform infrared (FTIR) spectrometry. Our FTIR data suggest that the frequency for the Si–D bending mode at the SiO2/Si interface is 490 cm−1. Our experimental data support Van de Walle and Jackson’s theory with some modification. Their theory is correct for the experiments of breaking Si–H/D bonds using scanning tunneling microscope where no oxide involves. In the SiO2/Si case, the de-excitation of the Si–D bond may be due to the energy coupling from the Si–D bending mode to two vibrational modes, i.e., Si–O TO mode and the Si–Si TO phonon mode. Van de Walle and Jackson only pointed out coupling to Si–Si TO phonon mode. The strongest coupling might happen between the Si–D mode and the Si–O TO mode. Therefore, the oxide may play a crucial role in energy dissipation of the Si–D bond in metal–oxide–semiconductor devices. © 2003 American Institute of Physics.
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68.35.Ja Surface and interface dynamics and vibrations
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
61.50.Lt Crystal binding; cohesive energy
78.30.Hv Other nonmetallic inorganics

Long-wavelength optical phonon properties of ternary MgZnO thin films

J. Chen and W. Z. Shen

Appl. Phys. Lett. 83, 2154 (2003); http://dx.doi.org/10.1063/1.1610795 (3 pages) | Cited 19 times

Online Publication Date: 9 September 2003

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Far-infrared (FIR) reflection measurements have been employed to study the long-wavelength optical phonon properties in cubic MgZnO thin films grown by reactive electron beam evaporation on sapphire substrates. The frequencies of the optical phonons with T2 symmetry are obtained by calculating the FIR reflection spectra using a multioscillator model and Kramers–Kronig dispersion analysis. The modified random-element-isodisplacement model has been used to analyze the long-wavelength optical mode behavior in both cubic and hexagonal MgZnO alloys. It is found that cubic MgZnO exhibits a two-mode behavior, while for hexagonal MgZnO, the E1 mode displays a two-mode behavior and the A1 mode a one-mode behavior. The effects of structural transition on the optical phonon frequency, optical mode behavior, and force constant have also been clearly revealed. © 2003 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Micropipe evolution in silicon carbide

Mikhail Yu. Gutkin, Alexander G. Sheinerman, Tatyana S. Argunova, Evgeniy N. Mokhov, Jung Ho Je, Yeukuang Hwu, Wen-Li Tsai, and Giorgio Margaritondo

Appl. Phys. Lett. 83, 2157 (2003); http://dx.doi.org/10.1063/1.1609038 (3 pages) | Cited 6 times

Online Publication Date: 9 September 2003

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Micropipe bundling and twisting in SiC crystals was revealed using synchrotron x-ray phase sensitive radiography. The computer simulation of micropipe evolution during the crystal growth suggests that the bundled and twisted micropipes arise under the influence of stress fields from other neighboring micropipes. The annihilation of twisted dipoles is attributed to their transformation into semiloops. Reactions of micropipe coalescence lead to the generation of micropipes and/or the annihilation of initial micropipes, resulting in the decrease in their average density. © 2003 American Institute of Physics.
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61.72.Lk Linear defects: dislocations, disclinations

Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

Won Woong Jung, Si Kyung Choi, Soon Yong Kweon, and Seung Jin Yeom

Appl. Phys. Lett. 83, 2160 (2003); http://dx.doi.org/10.1063/1.1610809 (3 pages) | Cited 13 times

Online Publication Date: 9 September 2003

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The Pt hillock in a Pt/Ti electrode stack has been the main concern in ferroelectric random access memory due to the reliability problem. The origin of the hillock formation is the compressive stress, and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thin films with a columnar structure. However, the hillock growth orientation and mechanism have not been reported. In this study, we found that an orientation relationship of Pt(100)hillock//Pt(111)thin film existed between the Pt hillock and the thin film. The Pt hillock was a single crystal having facets with polyatomic steps. From these results, we suggest that the Pt hillock growth mechanism is the layer growth of flat faces, which shapes the hillock into a tetrahedron single crystal. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
61.72.Mm Grain and twin boundaries
85.50.Gk Non-volatile ferroelectric memories
68.60.Bs Mechanical and acoustical properties
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