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22 Sep 2003

Volume 83, Issue 12, pp. 2303-2490

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2396 (2003); http://dx.doi.org/10.1063/1.1613038 (3 pages)

A. Rida, V. Fernandez, and M. A. M. Gijs
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Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

Chin-Yuan Hsu, Wen-How Lan, and YewChung Sermon Wu

Appl. Phys. Lett. 83, 2447 (2003); http://dx.doi.org/10.1063/1.1601306 (3 pages) | Cited 28 times

Online Publication Date: 15 September 2003

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The effect of thermal annealing on current–voltage properties of GaN light emitting diodes (LEDs) has been studied. At annealing temperatures above 700 °C, the p–n junction of the diodes became very leaky and Ga-contained metallic bubbles were observed on the surface of Ni/Au p-ohmic contact. Transmission electron microscopy and energy dispersive x-ray spectrometer studies revealed that these metallic bubbles resided directly on top of the threading dislocations in GaN and both Ni and Au were indiffused into the LED structure along the cores of the TDs. The conducting paths formed by the metal containing dislocation cores are believed to be the cause for the observed short circuit behavior of p–n junctions at high annealing temperatures. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
85.60.Jb Light-emitting devices
61.72.Cc Kinetics of defect formation and annealing
73.61.Ey III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
61.72.Lk Linear defects: dislocations, disclinations

On the origin of shot noise in CdTe detectors

G. Ferrari, M. Sampietro, G. Bertuccio, G. Gomila, and L. Reggiani

Appl. Phys. Lett. 83, 2450 (2003); http://dx.doi.org/10.1063/1.1611648 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2003

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Semi-insulating CdTe-based detectors exhibit shot noise at normal operating applied voltage, in spite of their linear symmetric current–voltage characteristic. In the present letter, we provide theoretical and experimental evidence that the origin of shot noise in these detectors under dark conditions can be explained in terms of a diffusion model. The physical reason for this behavior is that the dielectric relaxation time can become longer than the dynamic transit time depending on the applied bias, thus allowing carriers to cross the sample in an independent way. The predictions of the model are confirmed by detailed current noise measurements performed at different temperatures. © 2003 American Institute of Physics.
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29.40.Wk Solid-state detectors
85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

Naturally formed graded junction for organic light-emitting diodes

Yan Shao and Yang Yang

Appl. Phys. Lett. 83, 2453 (2003); http://dx.doi.org/10.1063/1.1605800 (3 pages) | Cited 13 times

Online Publication Date: 15 September 2003

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In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Study of a single dangling bond at the SiO2/Si interface in deep submicron metal–oxide–semiconductor transistors

L. Militaru and A. Souifi

Appl. Phys. Lett. 83, 2456 (2003); http://dx.doi.org/10.1063/1.1608493 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2003

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Two-level charge pumping (CP) measurements have been used for the study of a single trap situated at the SiO2/Si interface of sub-100 nm metal–oxide–semiconductor transistors (50 nm length). At room temperature, we have measured the emission time constant (τ) of the single trap and verified that the generation-recombination process was consistent with the Shockley–Read–Hall theory. Temperature-dependent CP measurements have been used to determine the thermal variation of the emission time constant. We show that an Arrhenius plot of the emission time constant versus the temperature (τxT2 vs 1/T) allows the determination of the capture cross section and energy position of the trap within the silicon band gap. The single trap, which has been characterized here, is shown to be the well-known donor Pb0 center (dangling bond) at the SiO2/Si (100) interface. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors

High-efficiency white phosphorescent organic light-emitting devices with greenish-blue and red-emitting layers

Shizuo Tokito, Toshiki Iijima, Toshimitsu Tsuzuki, and Fumio Sato

Appl. Phys. Lett. 83, 2459 (2003); http://dx.doi.org/10.1063/1.1611620 (3 pages) | Cited 102 times

Online Publication Date: 15 September 2003

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We demonstrate high-efficiency white light emission from a phosphorescent organic light-emitting device with greenish-blue and red emissive layers. Bis{2-[3,5-bis(trifluoromethyl)phenyl]-pyridinato-N,C2′}iridium(III)picolinate [(CF3ppy)2Ir(pic)] and bis{2-[2′-benzo(4,5-a)thienyl]pyridinato-N,C3′}iridium(III)acetylacetonate were employed for the greenish-blue and red phosphorescent materials for the emissive layers. To enhance the emission efficiency of (CF3ppy)2Ir(pic), 4,4′-bis(9-carbazolyl)-2,2′-dimethyl-biphenyl was used as the charge-transporting host. White light emission was obtained by controlling the layer thickness and the concentration of each phosphorescent material in the emissive layers. A maximum external quantum efficiency of 12%, a luminance efficiency of 18 cd/A, and a maximum power efficiency of 10 lm/W were achieved at a current density of 0.01 mA/cm2. This high efficiency is primarily attributed to the improvement of greenish-blue emission efficiency due to the strong confinement of triplet excitons on the (CF3ppy)2Ir(pic) molecules. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
71.35.-y Excitons and related phenomena

Self-switching of branched multiterminal junctions: a ballistic half-adder

L. Worschech, S. Reitzenstein, P. Hartmann, S. Kaiser, M. Kamp, and A. Forchel

Appl. Phys. Lett. 83, 2462 (2003); http://dx.doi.org/10.1063/1.1613049 (3 pages) | Cited 7 times

Online Publication Date: 15 September 2003

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We demonstrate a self-switching effect of narrow current channels, which allows the control of multiterminal junctions without using external gates. The self-switching leads to negative differential resistance and is interpreted in terms of a bias voltage controlled gating of the junction and the injection of electrons from different terminals. The self-switched multiterminal junction realized in a single conducting plane is exploited as a nanoelectronic half-adder. Our results demonstrate that self-switching effects may be used to increase the functionality of a given number of nanoelectronic devices. © 2003 American Institute of Physics.
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85.35.-p Nanoelectronic devices
84.30.Sk Pulse and digital circuits

Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

S. Solodky, A. Khramtsov, T. Baksht, M. Leibovitch, S. Hava, and Yoram Shapira

Appl. Phys. Lett. 83, 2465 (2003); http://dx.doi.org/10.1063/1.1613794 (3 pages) | Cited 4 times

Online Publication Date: 15 September 2003

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AlGaN/GaN high electron mobility transistor, AlGaAs/InGAs/GaAs pseudomorphic HEMT, and InAlAs/InGaAs metamorphic HEMT (MHEMT) epitaxial structures have been characterized using surface photovoltage spectroscopy. The effects of the transistor top and bottom delta-doping levels δtop, δbot, and surface charge Qsur on the spectrum features have been studied using numerical simulations. Based on the latter, an empirical model has been developed, which allows extraction and comparison of δtop, δbot, and Qsur and is applicable for both double-sided and single-sided delta-doped structures. Prediction of the final device performance by the model is shown for two MHEMT structures. Devices produced on these structures show maximum drain currents, which correlate well with δtop values calculated using the model. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
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