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22 Sep 2003

Volume 83, Issue 12, pp. 2303-2490

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2396 (2003); http://dx.doi.org/10.1063/1.1613038 (3 pages)

A. Rida, V. Fernandez, and M. A. M. Gijs
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Temperature effect on ultrathin SiO2 time-dependent-dielectric-breakdown

Kin P. Cheung

Appl. Phys. Lett. 83, 2399 (2003); http://dx.doi.org/10.1063/1.1613367 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2003

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The unusually high temperature acceleration in ultrathin oxide time-dependentdielectric-breakdown and the non-Arrhenius behavior are one of the current outstanding puzzles in oxide reliability research. In this letter, both phenomena are explained using the recently developed kinetic model. It is found that in thick oxide the degradation kinetic is controlled by hole trapping while in thin oxide it is controlled by the consumption of trapped holes. The consumption of trapped holes is further found to be a competition between hole detrapping and electron capturing, leading to the observed non-Arrhenius behavior. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Jp Dielectric breakdown and space-charge effects
71.55.Ht Other nonmetals
73.61.Ng Insulators

Nonlinear-optical probing of nanosecond ferroelectric switching

E. D. Mishina, N. E. Sherstyuk, V. I. Stadnichuk, A. S. Sigov, V. M. Mukhorotov, Yu. I. Golovko, A. van Etteger, and Th. Rasing

Appl. Phys. Lett. 83, 2402 (2003); http://dx.doi.org/10.1063/1.1612905 (3 pages) | Cited 17 times

Online Publication Date: 15 September 2003

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It is demonstrated that the switching dynamics of the ferroelectric polarization in thin Ba(SrTi)O3 (BST) films can be followed by optical second harmonic generation with a time resolution that is only limited by the gating electronics. It is shown that the characteristic time of electric-field induced polarization switching in 70 nm BST films is less than τ = 5 ns. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.22.Ej Polarization and depolarization

Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications

M. J. Biercuk, D. J. Monsma, C. M. Marcus, J. S. Becker, and R. G. Gordon

Appl. Phys. Lett. 83, 2405 (2003); http://dx.doi.org/10.1063/1.1612904 (3 pages) | Cited 41 times

Online Publication Date: 15 September 2003

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We report a method for depositing patterned dielectric layers with submicron features using atomic layer deposition. The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100–150 °C using several different precursors and patterned using either electron-beam or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A lift-off technique presented here gives sharp step edges with edge roughness as low as ∼10 nm. We also measure dielectric constants (κ) and breakdown fields for the high-κ materials aluminum oxide (κ∼8–9), hafnium oxide (κ∼16–19), and zirconium oxide (κ∼20–29), grown under similar low temperature conditions. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)

Large piezoelectric response in (111)-oriented epitaxial Pb(Zr,Ti)O3 films consisting of mixed phases with rhombohedral and tetragonal symmetry

Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Takahiro Oikawa, Hiroshi Funakubo, Takashi Iijima, Hirofumi Matsuda, and Keisuke Saito

Appl. Phys. Lett. 83, 2408 (2003); http://dx.doi.org/10.1063/1.1611273 (3 pages) | Cited 14 times

Online Publication Date: 15 September 2003

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Pb(Zr,Ti)O3 films with a Zr/(Zr+Ti) ratio of 0.48 having 1.5 μm in thickness were grown on (100)c-, (110)c-, and (111)c-oriented SrRuO3//SrTiO3 substrates by metalorganic chemical vapor deposition. It was ascertained by θ–2θ scans of x-ray diffraction that (001)T-/(100)T-/(100)R-, {110}-, and {111}-oriented films were epitaxially grown on (100)c-, (110)c-, and (111)c-oriented substrates. Polarization and field-induced strain in these films were simultaneously observed through a scanning probe microscope that was attached to a ferroelectric test system. About three times larger field-induced strain than that on other substrates was observed together with the largest spontaneous polarization for a film grown on a (111)cSrRuO3//(111)SrTiO3 substrate. High-resolution x-ray diffraction analysis suggested that the film grown on the (111)cSrRuO3//(111)SrTiO3 substrate consisted of rhombohedral and tetragonal mixture phases. Its crystal structure possibly contributed to the large piezoelectric response. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
68.55.Nq Composition and phase identification
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ej Polarization and depolarization
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputtering

Jiwei Lu and Susanne Stemmer

Appl. Phys. Lett. 83, 2411 (2003); http://dx.doi.org/10.1063/1.1613036 (3 pages) | Cited 75 times

Online Publication Date: 15 September 2003

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Near-stoichiometric Bi1.5Zn1.0Nb1.5O7 (BZN) films were deposited by rf magnetron sputtering. The relative permittivity and dielectric loss of BZN films were measured with frequencies up to 100 MHz using planar Al2O3/Pt/BZN/Pt and Si/SiO2/Pt/BZN/Pt capacitor structures. BZN films with thicknesses in the range of 160 to 170 nm exhibited electric field tunable permittivities up to 220, and dielectric loss tangents less than 0.0005. A maximum applied bias field of 2.4 MV/cm resulted in a ∼ 55% tunability of the dielectric constant. The permittivity was independent of the measurement frequency over a wide frequency range (10 kHz–100 MHz). Above 1 MHz, losses were increasingly dominated by conductor losses of the Pt bottom electrode. Their excellent dielectric properties make BZN films attractive candidates for low-loss, medium-permittivity integrated device applications. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Cd Deposition by sputtering
77.22.Gm Dielectric loss and relaxation

Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi4−xNdxTi3O12 films

A. Garg, Z. H. Barber, M. Dawber, J. F. Scott, A. Snedden, and P. Lightfoot

Appl. Phys. Lett. 83, 2414 (2003); http://dx.doi.org/10.1063/1.1613052 (3 pages) | Cited 84 times

Online Publication Date: 15 September 2003

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Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films have been grown by pulsed-laser deposition from a Bi4−xNdxTi3O12 (x = 0.85) target on SrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3 substrates, respectively. X-ray diffraction illustrated a unique epitaxial relationship between film and substrate for all orientations. We observed a strong dependence of ferroelectric properties on the film orientation, with no ferroelectric activity in an (001)-oriented film; a remanent polarization 2Pr of 12 μC/cm2 and coercive field Ec of 120 kV/cm in a (118)-oriented film; and 2Pr = 40 μC/cm2, Ec = 50 kV/cm in a (104)-oriented film. The lack of ferroelectric activity along the c-axis is consistent with the orthorhombic nature of the crystal structure of the bulk material, as determined by powder neutron diffraction. © 2003 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology

Contribution of interface capacitance to the electric-field breakdown in thin-film Al–AlOx–Al capacitors

Guneeta Singh-Bhalla, Xu Du, and Arthur F. Hebard

Appl. Phys. Lett. 83, 2417 (2003); http://dx.doi.org/10.1063/1.1613802 (3 pages) | Cited 7 times

Online Publication Date: 15 September 2003

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We present a systematic study of the dependence of breakdown voltages on oxide thickness d in Al–AlOx–Al thin-film capacitor structures. For sufficiently thin dielectrics, we find that a significant portion of the measured breakdown potential Vb occurs across the electrode interfaces, thereby leading to an overestimate (Vb/d) of the true breakdown electric field Eb across the dielectric. By modeling this interface contribution as an “interface” capacitance in series with the geometric “bulk” capacitance, we find for high-quality rf magnetron-sputtered AlOx dielectrics that Eb is independent of d over the range 30–300 Å. © 2003 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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