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22 Sep 2003

Volume 83, Issue 12, pp. 2303-2490

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2396 (2003); http://dx.doi.org/10.1063/1.1613038 (3 pages)

A. Rida, V. Fernandez, and M. A. M. Gijs
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Dynamics and second-order nonlinear optical susceptibility of photoexcited carriers at Si(111) interfaces

D. Bodlaki and E. Borguet

Appl. Phys. Lett. 83, 2357 (2003); http://dx.doi.org/10.1063/1.1592893 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2003

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An interface specific investigation, by time-resolved second-harmonic generation, shows that photoexcited carrier dynamics at Si(111) interfaces depend strongly on surface termination. Oxide- and H-terminated surfaces show distinct transient behavior, with a surface recombination velocity <103 cm/s. Incompletely H-terminated Si(111) shows faster dynamics, correlating with less interface passivation. A simple model reveals that the second-order nonlinear optical susceptibility of photoexcited carriers is two orders of magnitude greater than that of the valence band electrons. © 2003 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena
78.68.+m Optical properties of surfaces
42.65.An Optical susceptibility, hyperpolarizability
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.47.-p Spectroscopy of solid state dynamics
73.20.-r Electron states at surfaces and interfaces
68.47.Fg Semiconductor surfaces
73.50.Pz Photoconduction and photovoltaic effects

Studying the local chemical environment of sulfur atoms at buried interfaces in CdS/ZnSe superlattices

C. Heske, U. Groh, O. Fuchs, L. Weinhardt, E. Umbach, M. Grün, S. Petillon, A. Dinger, C. Klingshirn, W. Szuszkiewicz, and A. Fleszar

Appl. Phys. Lett. 83, 2360 (2003); http://dx.doi.org/10.1063/1.1609235 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2003

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Soft x-ray emission spectroscopy has been employed to study the local chemical environment of sulfur atoms in sulfide II–VI semiconductors (ZnS, CdS, HgS) and CdS/ZnSe superlattices. By using fluorescence transitions involving metal d-state-derived valence bands and S 2p core holes, a distinction between S–Zn and S–Cd bonds in the superlattices can be made. We find that, in addition to the expected S–Cd bonds, interfacial S–Zn bonds are present in superlattices grown at 170 °C, and that the amount of S–Zn bonds significantly increases for growth at 300 °C due to interface intermixing. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
68.35.Fx Diffusion; interface formation
78.70.En X-ray emission spectra and fluorescence

An electrostatic barrier to trap filling in CuIn1−xGaxSe2

David L. Young and Richard S. Crandall

Appl. Phys. Lett. 83, 2363 (2003); http://dx.doi.org/10.1063/1.1613034 (3 pages) | Cited 4 times

Online Publication Date: 15 September 2003

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Voltage pulses of variable length were applied to CuIn1−xGaxSe2/CdS (0<x<1) junction solar cells. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead, they follow a simple model based on electrostatic charging of localized regions of traps. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions. Hole capture cross-section data for a single defect are obtained. © 2003 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Ht Other nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion
81.05.Hd Other semiconductors
81.05.Dz II-VI semiconductors

Potential imaging of pentacene organic thin-film transistors

J. A. Nichols, D. J. Gundlach, and T. N. Jackson

Appl. Phys. Lett. 83, 2366 (2003); http://dx.doi.org/10.1063/1.1611278 (3 pages) | Cited 77 times

Online Publication Date: 15 September 2003

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Scanning Kelvin probe microscopy (SKPM) has been used to simultaneously obtain high-resolution topographical and potential images of pentacene organic thin-film transistors (OTFTs) during device operation. SKPM images of OTFTs show large potential drops at the source with the magnitude dependent on contact metallurgy and relatively small potential drops at grain boundaries in polycrystalline pentacene films. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Tunable nonlinear current–voltage characteristics of three-terminal ballistic nanojunctions

I. Shorubalko, H. Q. Xu, P. Omling, and L. Samuelson

Appl. Phys. Lett. 83, 2369 (2003); http://dx.doi.org/10.1063/1.1605822 (3 pages) | Cited 16 times

Online Publication Date: 15 September 2003

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The current–voltage (I–V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I–V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. © 2003 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.23.Ad Ballistic transport

High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

June O Song, Dong-Seok Leem, Joon Seop Kwak, O. H. Nam, Y. Park, and Tae-Yeon Seong

Appl. Phys. Lett. 83, 2372 (2003); http://dx.doi.org/10.1063/1.1613991 (3 pages) | Cited 13 times

Online Publication Date: 15 September 2003

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We report on a promising Rh-based scheme for high-quality ohmic contacts to surface-treated p-GaN:Mg (4×1017 cm−3). It is shown that the two-step surface-treated Rh contacts (10 nm) produce a specific contact resistance of 1.7×10−5 Ω cm2. It is also shown that the two-step treated Rh/Ni (5/5 nm) and Rh/Au (5/5 nm) contacts yield 6.0×10−5 and 9.3×10−6 Ω cm2, respectively. Based on the current–voltage measurement, x-ray photoemission spectroscopy, and Auger electron spectroscopy results, the mechanisms for the formation of the nonalloyed Rh-based ohmic contacts is described and discussed. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
79.20.Fv Electron impact: Auger emission
79.60.Jv Interfaces; heterostructures; nanostructures

Optical properties of InAlAs/GaAsSb heterostructures grown by metalorganic vapor phase epitaxy

D. R. Chamberlin, S. S. Yi, D. Isaacson, G. Girolami, and N. Moll

Appl. Phys. Lett. 83, 2375 (2003); http://dx.doi.org/10.1063/1.1613364 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2003

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The optical properties of GaAsSb/InAlAs heterostructures grown on InP have been measured with cathodoluminescence, photoluminescence, and Fourier-transform infrared spectroscopy (FTIR) at <10 K. A heterostructure with heavily carbon-doped GaAsSb shows little shift of emission wavelength with incident intensity. A heterostructure with undoped GaAsSb has emission that is redshifted with respect to the doped structure and has a blueshift of 6 meV per decade of increasing beam intensity. Low-temperature FTIR shows that the lower energy level transition is redshifted in the undoped sample relative to the doped sample. These observations are consistent with the presence of donor-acceptor (D–A) pair recombination in the undoped structures, which is overwhelmed by free electron-bound acceptor recombination in the doped structure. We conjecture that the anomalously large difference between emission and absorption and blueshift in D–A transition observed result from spontaneous ordering in the GaAsSb. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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