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22 Sep 2003

Volume 83, Issue 12, pp. 2303-2490

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2396 (2003); http://dx.doi.org/10.1063/1.1613038 (3 pages)

A. Rida, V. Fernandez, and M. A. M. Gijs
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Optical detection of quasi-static actuation of nanoelectromechanical systems

Christine Meyer, Heribert Lorenz, and Khaled Karrai

Appl. Phys. Lett. 83, 2420 (2003); http://dx.doi.org/10.1063/1.1608491 (3 pages) | Cited 8 times

Online Publication Date: 15 September 2003

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An all optical method designed to test the functionality of nanoelectromechanical systems is presented. Silicon tweezers consisting of freestanding nanometer-sized prongs are prepared using electron beam lithography. Images of the tweezers structures are taken by scanning confocal microscopy while the prongs are electrostatically actuated under a low frequency ac voltage. The images, which are demodulated at the actuation frequency and its higher harmonics, clearly resolve the actuating parts of the tweezers. An actuation amplitude down to 6 pm (rms)/math can be detected. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
81.16.Ta Atom manipulation
07.79.Fc Near-field scanning optical microscopes
37.10.De Atom cooling methods
37.10.Gh Atom traps and guides
37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Self-assembled Co nanorods in diamond-like carbon thin films synthesized by plasma-assisted magnetron sputtering

F. L. Wang, J. C. Jiang, and E. I. Meletis

Appl. Phys. Lett. 83, 2423 (2003); http://dx.doi.org/10.1063/1.1610813 (3 pages) | Cited 6 times

Online Publication Date: 15 September 2003

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We report on self-assembled, high-aspect-ratio nanostructures of Co rods in diamond-like carbon (DLC) thin films synthesized by plasma-assisted magnetron sputtering. Cross-sectional and plan-view transmission electron microscopy investigations show that the nanorods continuously grow vertically to the substrate and have a relatively narrow distributed lateral size. The nanorods in the as-deposited thin films are found to have an ε-Co structure with a high density of defects and are encapsulated by 1–2 nm of an amorphous DLC matrix. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
81.15.Cd Deposition by sputtering
81.16.Dn Self-assembly

Fluorination of carbon nanotubes in CF4 plasma

N. O. V. Plank, Liudi Jiang, and R. Cheung

Appl. Phys. Lett. 83, 2426 (2003); http://dx.doi.org/10.1063/1.1611621 (3 pages) | Cited 54 times

Online Publication Date: 15 September 2003

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The effect of CF4 gaseous plasma exposure to single-wall carbon nanotubes (CNTs) has been studied. Raman spectroscopy results show that CNTs have gained more disordered sp3 bonds associated with functionalization, as both the flow rates of gas in the plasma and exposure time in the plasma are increased. Scanning electron microscopy images indicate the CNTs have been preserved after CF4 plasma exposure. X-ray photoelectron spectroscopy provides evidence of carbon to fluorine bonds (C–F) on the CNTs samples after CF4 plasma exposure. Semi-ionic and covalent C–F bonds are prevalent on the CNTs after CF4 exposure with the intensity ratio of the semi-ionic to covalent C–F bond decreasing as the flow rate of CF4 and exposure time in the CF4 plasma is increased. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
78.67.Ch Nanotubes
78.30.Hv Other nonmetallic inorganics
79.60.-i Photoemission and photoelectron spectra

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Yongqiang Xue and Mark A. Ratner

Appl. Phys. Lett. 83, 2429 (2003); http://dx.doi.org/10.1063/1.1613355 (3 pages) | Cited 14 times

Online Publication Date: 15 September 2003

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Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally activated transport with increasing nanotube length. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.63.Fg Nanotubes
73.30.+y Surface double layers, Schottky barriers, and work functions

Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Dunwei Wang, Qian Wang, Ali Javey, Ryan Tu, Hongjie Dai, Hyoungsub Kim, Paul C. McIntyre, Tejas Krishnamohan, and Krishna C. Saraswat

Appl. Phys. Lett. 83, 2432 (2003); http://dx.doi.org/10.1063/1.1611644 (3 pages) | Cited 148 times

Online Publication Date: 15 September 2003

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Single-crystal Ge nanowires are synthesized by a low-temperature (275 °C) chemical vapor deposition (CVD) method. Boron doped p-type GeNW field-effect transistors (FETs) with back-gates and thin SiO2 (10 nm) gate insulators are constructed. Hole mobility higher than 600 cm2/V s is observed in these devices, suggesting high quality and excellent electrical properties of as-grown Ge wires. In addition, integration of high-κ HfO2 (12 nm) gate dielectric into nanowire FETs with top-gates is accomplished with promising device characteristics obtained. The nanowire synthesis and device fabrication steps are all performed below 400 °C, opening a possibility of building three-dimensional electronics with CVD-derived Ge nanowires. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.63.Nm Quantum wires
77.22.Ch Permittivity (dielectric function)
61.46.-w Structure of nanoscale materials

Drain voltage scaling in carbon nanotube transistors

M. Radosavljević, S. Heinze, J. Tersoff, and Ph. Avouris

Appl. Phys. Lett. 83, 2435 (2003); http://dx.doi.org/10.1063/1.1610791 (3 pages) | Cited 59 times

Online Publication Date: 15 September 2003

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Decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior. However, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs. © 2003 American Institute of Physics.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices
85.60.Jb Light-emitting devices

Optical properties of organic dyes in nanoporous zeolite crystals

Irene L. Li, Z. K. Tang, X. D. Xiao, C. L. Yang, and W. K. Ge

Appl. Phys. Lett. 83, 2438 (2003); http://dx.doi.org/10.1063/1.1613033 (3 pages) | Cited 8 times

Online Publication Date: 15 September 2003

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Organic dye molecules of styryl 7 were introduced into the channels of AlPO4-5 single crystals. Polarized absorption and photoluminescence spectra of the dye molecules were investigated. The polarization angle dependence of the absorption and photoluminescence intensity indicates that the dye molecules are highly oriented in the channels. The hexagonal-shaped AlPO4-5 single crystal serves as a natural microcavity for lasing action of the dye molecules. The microcavity modes of the lasing action were also demonstrated. © 2003 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.25.Ja Polarization
81.05.Rm Porous materials; granular materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
78.55.Mb Porous materials
61.46.-w Structure of nanoscale materials
61.43.Gt Powders, porous materials
82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids
42.70.Hj Laser materials
42.60.By Design of specific laser systems
42.55.Mv Dye lasers

Pattern uniformity control in room-temperature imprint lithography

Pil S. Hong and Hong H. Lee

Appl. Phys. Lett. 83, 2441 (2003); http://dx.doi.org/10.1063/1.1613363 (3 pages) | Cited 7 times

Online Publication Date: 15 September 2003

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Nonuniformity in patterning that can arise in room-temperature imprint lithography is analyzed and a condition is presented under which the uniformity is assured. The condition is developed in such a way that the elastic recovery of stain-hardened polymer after the mold is removed does not cause the nonuniformity. Experimental testing of the condition reveals that it is a reliable criterion for uniform patterning. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
68.37.Ps Atomic force microscopy (AFM)

Nanoscroll formation from strained layer heterostructures

Marius Grundmann

Appl. Phys. Lett. 83, 2444 (2003); http://dx.doi.org/10.1063/1.1613366 (3 pages) | Cited 42 times

Online Publication Date: 15 September 2003

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Nanoscrolls develop when thin, strained semiconductor multilayers are peeled off from their substrate. We model the strain relaxation using continuum strain theory and predict that the scroll diameter depends on the winding direction if the cubic symmetry of zinc blende semiconductors is taken into account, 〈100〉 being the preferred winding direction. The effects of nonlinear strain and third order elastic coefficients are considered, the latter leading to smaller scroll diameter. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
62.20.D- Elasticity
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