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22 Sep 2003

Volume 83, Issue 12, pp. 2303-2490

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2396 (2003); http://dx.doi.org/10.1063/1.1613038 (3 pages)

A. Rida, V. Fernandez, and M. A. M. Gijs
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Plasticity in Ni59Zr20Ti16Si2Sn3 metallic glass matrix composites containing brass fibers synthesized by warm extrusion of powders

D. H. Bae, M. H. Lee, D. H. Kim, and D. J. Sordelet

Appl. Phys. Lett. 83, 2312 (2003); http://dx.doi.org/10.1063/1.1611622 (3 pages) | Cited 51 times

Online Publication Date: 15 September 2003

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Deformation behavior of centimeter-scale Ni-based metallic glass matrix composites reinforced by brass fibers, synthesized by warm extrusion of gas atomized powders, has been investigated under the uniaxial compression condition at room temperature. Throughout the extrusion process, all blended spherical powders are elongated along the extrusion direction. The brass fibers are well distributed in the metallic glass matrix for the metallic glass matrix composites containing the brass up to 0.4 in volume fraction and no pores are visible. With increasing the brass content, elastic modulus and strength decrease due to the softness of the brass, but enhanced macroscopic plasticity is observed due to the formation of multiple shear bands, initiated from the interface between brass fiber and metallic glass matrix, as well as their confinement between the brass fibers. These behaviors are not observed in the sample synthesized by warm extrusion of only metallic glass powders. © 2003 American Institute of Physics.
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61.43.Fs Glasses
81.40.Lm Deformation, plasticity, and creep
81.05.Bx Metals, semimetals, and alloys
81.05.Kf Glasses (including metallic glasses)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Domain structure of epitaxial Bi4Ti3O12 thin films grown on (001) SrTiO3 substrates

X. Q. Pan, J. C. Jiang, C. D. Theis, and D. G. Schlom

Appl. Phys. Lett. 83, 2315 (2003); http://dx.doi.org/10.1063/1.1611277 (3 pages) | Cited 10 times

Online Publication Date: 15 September 2003

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The domain structure of epitaxial (001) Bi4Ti3O12 thin films grown on (001) SrTiO3 substrates by reactive molecular beam epitaxy was studied using transmission electron microscopy. It was found that the Bi4Ti3O12 thin films contain randomly distributed rotation domains of two different types, which are related by a 90° rotation around the c axis of Bi4Ti3O12. These domains result from the difference in crystallographic symmetry between the Bi4Ti3O12 (001) plane and the SrTiO3 (001) surface. Moreover, out-of-phase boundaries were frequently observed in the epitaxial Bi4Ti3O12 films. Detailed quantitative high-resolution transmission electron microscopy studies showed that the growth of epitaxial Bi4Ti3O12 film on the SrTiO3 (001) surface begins with the energetically favorable central TiO2 layer in the middle of the triple perovskite block within Bi4Ti3O12. As a result, a number of out-of-phase domain boundaries are formed at the atomic steps on the substrate surface. These studies suggest that Bi4Ti3O12 films grow on (001) SrTiO3 substrates through two-dimensional island growth mechanism, where individual domains nucleate with random orientations of their polar a axis along either [110] or [1math0] direction of SrTiO3. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Growth and characterization of 28Sin/30Sin isotope superlattices

T. Kojima, R. Nebashi, K. M. Itoh, and Y. Shiraki

Appl. Phys. Lett. 83, 2318 (2003); http://dx.doi.org/10.1063/1.1613365 (3 pages) | Cited 20 times

Online Publication Date: 15 September 2003

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We present silicon isotope superlattices: Si structures in which alternating layers are predominantly composed of the stable isotopes 28Si and 30Si. Using solid-source molecular beam epitaxy, the thickness of each isotope layer has been precisely controlled to produce isotope superlattices denoted 28Sin/30Sin, where n is the number of atomic monolayers, each one 0.136 nm thick. We have produced and studied 28Si8/30Si8, 28Si12/30Si12, and 28Si24/30Si24, whose structures have been confirmed by secondary ion mass spectrometry. Further confirmation was provided by Raman spectroscopy, which showed the confinement of phonons within specific isotope layers (28Si or 30Si layers) due to the mass periodicity created by isotope layering. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators

Control of microelectromechanical systems membrane curvature by silicon ion implantation

S. Jin, H. Mavoori, J. Kim, and V. A. Aksyuk

Appl. Phys. Lett. 83, 2321 (2003); http://dx.doi.org/10.1063/1.1611639 (3 pages) | Cited 7 times

Online Publication Date: 15 September 2003

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Thin silicon membranes in microelectromechanical systems (MEMS) optical devices such as beam-steering, movable mirrors may exhibit undesirable curvature when their surface is metallized with light-reflecting metals to enhance optical performance. We have applied Si+ ion implantations at dose levels of 0.4–5×1016/cm2 into the gold metallization layer to successfully reduce the mirror curvature as well as the degree of its temperature-dependent changes. The curvature change as well as the temperature dependence is found to be dependent on the implantation dose. The mechanism of the observed curvature flattening effect is attributed mostly to the induced compressive stress in gold metallization caused by the insertion of foreign implanted atoms of silicon. Such a Si implantation approach can be useful as a means for post-fabrication correction of unwanted curvature in MEMS membranes, as well as a technique to intentionally introduce a desired degree of curvature if needed. A convenient blanket implantation process can be utilized with minimal contamination problems as Si is a common element already present in the MEMS. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.82.-m Integrated optics
85.60.-q Optoelectronic devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
85.40.Ls Metallization, contacts, interconnects; device isolation
42.79.Bh Lenses, prisms and mirrors

Temperature-dependent adsorption of Hg on CdTe(211)B studied by spectroscopic ellipsometry

G. Badano, Y. Chang, J. W. Garland, and S. Sivananthan

Appl. Phys. Lett. 83, 2324 (2003); http://dx.doi.org/10.1063/1.1610252 (3 pages)

Online Publication Date: 15 September 2003

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The adsorption of Hg on CdTe(211)B is studied by reflective high-energy electron diffraction and by spectroscopic ellipsometry in the range of 1.8–4.1 eV. We use a Hg molecular beam to create a high equilibrium coverage of Hg on CdTe. We find that at least two types of Hg are present at the surface: A physisorbed form, which displays a Drude-type dielectric function, and a chemisorbed form, which gives rise to a dielectric function similar to that of bulk Hg1−xCdxTe, but with sharper structure characteristic of lower dimensionalities. The dependence of the relative amounts of these two forms of Hg on the temperature and the impinging flux is obtained from the data analysis. © 2003 American Institute of Physics.
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68.43.Mn Adsorption kinetics
78.68.+m Optical properties of surfaces
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Holographic volume gratings in bulk perylene-orange-doped hybrid inorganic-organic materials by the coherent field of a femtosecond laser

Guodong Qian, Jiayu Guo, Minquan Wang, Jinhai Si, Jianrong Qiu, and Kazuyuki Hirao

Appl. Phys. Lett. 83, 2327 (2003); http://dx.doi.org/10.1063/1.1613793 (3 pages) | Cited 6 times

Online Publication Date: 15 September 2003

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Holographic volume gratings with high first-order Bragg diffraction efficiency (greater than 35%) were fabricated in bulk laser-dye-doped hybrid inorganic-organic materials by the coherent fields of a femtosecond laser. Observations of optical microscopy show that refractive-index-modulated volume gratings were realized inside the sample through multiphoton absorption process. The isomerization and alignment of the laser dye molecules are responsible for the grating formation. We suggest that the materials codoped with laser dye and azodye and with photoinduced gratings inside are promising materials for making the distributed feedback tunable lasers. © 2003 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Hj Laser materials
42.55.Mv Dye lasers

Liner materials for direct electrodeposition of Cu

M. W. Lane, C. E. Murray, F. R. McFeely, P. M. Vereecken, and R. Rosenberg

Appl. Phys. Lett. 83, 2330 (2003); http://dx.doi.org/10.1063/1.1610256 (3 pages) | Cited 61 times

Online Publication Date: 15 September 2003

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We identified a family of materials which can be directly electroplated with Cu in acidic plating baths commonly found in the microelectronics industry. Details are presented illustrating a number of important properties of the electroplated Cu/linear material system. These include the adhesion of the plated film to liner material, the recrystallization behavior of the plated film, the texture of the plated film, and the resistivity of the plated film after high-temperature anneals. Finally, an example is presented illustrating the direct plating of Cu across an 8 in. wafer without the use of a Cu seed layer. © 2003 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating
68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys
82.45.Qr Electrodeposition and electrodissolution
68.35.Np Adhesion
61.72.Cc Kinetics of defect formation and annealing

Site-selective silicon adatom desorption using femtosecond laser pulse pairs and scanning tunneling microscopy

D. N. Futaba, R. Morita, M. Yamashita, S. Tomiyama, and H. Shigekawa

Appl. Phys. Lett. 83, 2333 (2003); http://dx.doi.org/10.1063/1.1613361 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2003

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We performed an experimental study of silicon adatom desorption from the Si(111)-7×7 surface using femtosecond laser pulse pair excitation with 80 fs pulse duration, 800 nm center wavelength, 300 mW average power, and a 100 MHz repetition rate. Using scanning tunneling microscopy, we directly recorded the desorption characteristics at each delay setting for each of the four adatom binding sites. The study revealed a preferential dependence between the delay time and the adatom sites within a 66.6–1000 fs delay range. © 2003 American Institute of Physics.
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68.43.Tj Photon stimulated desorption
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
79.20.La Photon- and electron-stimulated desorption
68.43.Mn Adsorption kinetics

Synthesis and spectroscopic investigation of ruby microstructures

C. T. M. Ribeiro and A. R. Zanatta

Appl. Phys. Lett. 83, 2336 (2003); http://dx.doi.org/10.1063/1.1613815 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2003

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Light-emitting structures with microscopic dimensions have been produced after thermal annealing Cr-doped amorphous (a-)AlN films in an atmosphere of dry oxygen. The annealing treatments were performed at 1050 °C and induced the formation of structures that emit red light at room temperature. Depending on the time taken during thermal anneal, there appears regions which emit light either at approximately 683 or 693 nm, as indicated by photoluminescence (PL) measurements. Their presence is attributed to different local environments to the Cr3+ ions: oxygen-rich regions (rendering PL at ∼ 693 nm) and nitrogen-rich regions (with narrow PL lines at ∼ 683 nm and a broad contribution at higher wavelengths). In view of their spatial dimensions, and distinctive PL characteristics, the features emitting at approximately 693 nm were designated by ruby microstructures (RbMSs). Both PL imaging and atomic force microscopy indicate that isolated RbMSs are almost circular having their origin from defects on the surface of the substrate or in the film itself. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.55.Cr III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
68.37.Ps Atomic force microscopy (AFM)

Giant growth rate in nano-oxidation of p-silicon surfaces by using ethyl alcohol liquid bridges

Marta Tello and Ricardo García

Appl. Phys. Lett. 83, 2339 (2003); http://dx.doi.org/10.1063/1.1613799 (3 pages) | Cited 24 times

Online Publication Date: 15 September 2003

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We demonstrate that local oxidation nanolithography can be performed in liquid environments different from aqueous solutions with a significant improvement in the aspect ratio of the fabricated motives. Here, we perform a comparative study of noncontact atomic force microscopy oxidation experiments in water and ethyl alcohol. The growth rate of local oxides can be increased by almost an order of magnitude by using oxyanions from ethyl alcohol molecules. We propose that the enhanced growth rate is a consequence of the reduction of the trapped charges within the growing oxide. The present results open the possibility of using local oxidation nanolithography to directly fabricate vertical oxide structures while keeping lateral sizes in the nanometer range. © 2003 American Institute of Physics.
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81.16.Pr Micro- and nano-oxidation
81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation

Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds

B. Gelloz, H. Sano, R. Boukherroub, D. D. M. Wayner, D. J. Lockwood, and N. Koshida

Appl. Phys. Lett. 83, 2342 (2003); http://dx.doi.org/10.1063/1.1613812 (3 pages) | Cited 23 times

Online Publication Date: 15 September 2003

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Stabilization of electroluminescence (EL) from nanocrystalline porous silicon (PS) diodes has been achieved by replacing silicon–hydrogen bonds terminating the surface of nanocrystalline silicon with more stable silicon–carbon (Si–C) and silicon–oxygen (Si–O–C) bonds without significant effects on the electrical properties. The surface modification is performed by a thermal treatment of partially and anodically oxidized PS sample at about 90 °C with organic molecules: 1-decene, ethyl undecylenate, or n-caprinaldehyde. The porous silicon device whose surface has been modified with stable covalent bonds shows no degradation in the EL efficiency and EL output intensity under dc operation for several hours. The improved stability can be attributed to the high chemical resistance of Si–C and Si–O–C bonds against current-induced surface oxidation associated with the generation of nonradiative defects. © 2003 American Institute of Physics.
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81.65.Rv Passivation
78.60.Fi Electroluminescence
61.50.Lt Crystal binding; cohesive energy
81.05.Rm Porous materials; granular materials
61.46.-w Structure of nanoscale materials
61.43.Gt Powders, porous materials
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Formation of quasicrystals by partial devitrification of ball-milled amorphous Zr57Ti8Nb2.5Cu13.9Ni11.1Al7.5

S. Scudino, J. Eckert, U. Kühn, and L. Schultz

Appl. Phys. Lett. 83, 2345 (2003); http://dx.doi.org/10.1063/1.1613814 (3 pages) | Cited 11 times

Online Publication Date: 15 September 2003

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Amorphous Zr57Ti8Nb2.5Cu13.9Ni11.1Al7.5 powder with low oxygen contamination was prepared by ball milling of crystalline intermetallic compounds. The comparison with the corresponding alloy produced by melt spinning shows that the first crystallization phase does not depend on the way of preparation. In fact, devitrification of both powder and ribbon is characterized by the formation of a metastable nanoscale quasicrystalline phase during the first stage of the crystallization process. This suggests that both the amorphous ball-milled powder and the melt-spun ribbon have the same short-range order and that if this short-range order is icosahedral, it can be achieved also by solid-state processing. © 2003 American Institute of Physics.
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61.44.Br Quasicrystals
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Bx Metals, semimetals, and alloys

Remarkable thermal stability of BF3-doped polyaniline

Debangshu Chaudhuri, Prashanth W. Menezes, and D. D. Sarma

Appl. Phys. Lett. 83, 2348 (2003); http://dx.doi.org/10.1063/1.1613797 (3 pages) | Cited 7 times

Online Publication Date: 15 September 2003

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We show that the recently synthesized BF3-doped polyaniline (PANI) exhibits remarkable stability against thermal aging. Unlike the protonated PANI, which shows rapid degradation of the conductivity on heating in air, BF3-doped PANI shows more than an order of magnitude improvement in conductivity. We employ x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and x-ray diffraction to understand this unexpected phenomenon. © 2003 American Institute of Physics.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
72.20.Fr Low-field transport and mobility; piezoresistance
79.60.Fr Polymers; organic compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Bulk glassy Cu-based alloys with a large supercooled liquid region of 110 K

Akihisa Inoue and Wei Zhang

Appl. Phys. Lett. 83, 2351 (2003); http://dx.doi.org/10.1063/1.1613813 (3 pages) | Cited 14 times

Online Publication Date: 15 September 2003

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The replacement of Cu by 5%Ag for Cu50Hf45Al5 glassy alloy was found to increase significantly the stability of supercooled liquid against crystallization. The supercooled liquid region reached as large as 110 K for Cu45Hf45Al5Ag5. The extension of the supercooled liquid region is due to an increase in the crystallization temperature, accompanying the change in the primary crystalline phases. The effectiveness of Ag addition was interpreted to result from the retardation of long-range atomic rearrangements for the progress of crystallization reaction. The selection of the quaternary composition enabled us to form bulk glassy alloys with diameters up to 3 mm. The Young’s modulus and compressive fracture strength of the 5%Ag-containing alloy are 119 GPa and 2220 MPa, respectively. © 2003 American Institute of Physics.
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61.43.Fs Glasses
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
62.20.D- Elasticity
62.20.M- Structural failure of materials

Variations of long- and short-range-order structural and magnetic properties of thermally annealed Mn/GaAs digital alloys

Y. L. Soo, S. Wang, S. Kim, G. Kim, M. Cheon, X. Chen, H. Luo, Y. H. Kao, Y. Sasaki, X. Liu, and J. K. Furdyna

Appl. Phys. Lett. 83, 2354 (2003); http://dx.doi.org/10.1063/1.1605243 (3 pages) | Cited 8 times

Online Publication Date: 15 September 2003

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The crystal structure and local environment surrounding Mn atoms in Mn/GaAs digital layers thermally annealed at different temperatures have been investigated using x-ray diffraction and extended x-ray absorption fine structure methods. As the annealing temperature is increased, a satellite peak near the GaAs (004) diffraction line systematically shifts towards higher angles, indicating an apparent decrease of lattice parameters in the Mn/GaAs layers. When the annealing temperature is increased to 550 °C the satellite peak position moves dramatically from below to above the GaAs (004) peak, accompanied by a corresponding increase of Mn–As bond length from 2.48 to 2.56 Å, suggesting that the local structure around Mn changes from Ga substitution in GaAs to that of MnAs-like phase. Variations of the long- and short-range-order structures are believed to be related to the observed changes of magnetic properties including the disappearance of ferromagnetism in the sample annealed at 550 °C. © 2003 American Institute of Physics.
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61.66.Fn Inorganic compounds
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
61.72.Cc Kinetics of defect formation and annealing
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