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29 Sep 2003

Volume 83, Issue 13, pp. 2503-2719

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages)

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui
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Synthesis and field-emission properties of aligned MoO3 nanowires

Jun Zhou, S. Z. Deng, N. S. Xu, Jun Chen, and J. C. She

Appl. Phys. Lett. 83, 2653 (2003); http://dx.doi.org/10.1063/1.1613992 (3 pages) | Cited 37 times

Online Publication Date: 23 September 2003

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Aligned MoO3 nanowires have been grown on silicon substrates without using any catalyst. They were prepared in a two-step process: first by thermal evaporation and then further processed by oxidation. The MoO3 nanowires are of crystalline and have an orthorhombic structure. They also have high purity. Field-emission measurement showed that, typically, their turn-on field and threshold field were about 3.5 and 7.65 MV/m, respectively. Furthermore, the spatial distribution of emission sites was studied using transparent anode technique and the emission current of the sites was relatively uniform. These may be attributed to very good uniformity in the height and diameter of the nanowires, and to the separation between nanowires. Finally, the stability of the emission current over time was found to be within 10%. These findings indicate that MoO3 nanowires as a cold cathode have a potential future. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.65.Mq Oxidation

Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski–Krastanov mode

Y. G. Kim, Y. S. Joh, J. H. Song, K. S. Baek, S. K. Chang, and E. D. Sim

Appl. Phys. Lett. 83, 2656 (2003); http://dx.doi.org/10.1063/1.1612898 (3 pages) | Cited 12 times

Online Publication Date: 23 September 2003

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Self-assembled ZnSe/ZnS quantum dots (QDs) have been grown in the Stranski–Krastanov (S–K) mode using a metalorganic chemical vapor deposition technique under the atomic-layer epitaxy mode. Atomic-force-microscopy measurements on the uncapped ZnSe/ZnS QDs reveal that lens-shaped ZnSe QDs are formed after 1–2 monolayer ZnSe is deposited. The ZnSe QDs are estimated 1–2 nm in height and 25–35 nm in radius. The temperature-dependent behavior of confined carriers in the ZnSe QDs has been investigated through photoluminescence (PL) measurements. PL spectra show a substantial PL linewidth narrowing accompanied by a large redshift of the emission peak energy with increasing temperature. This unusual temperature-dependent behavior is interpreted as the dot-to-dot carrier transfer through the wetting layer, which is common to QDs grown in the S–K mode. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ps Atomic force microscopy (AFM)
68.65.Hb Quantum dots (patterned in quantum wells)

Scanning capacitance microscopy on ultranarrow doping profiles in Si

F. Giannazzo, D. Goghero, V. Raineri, S. Mirabella, and F. Priolo

Appl. Phys. Lett. 83, 2659 (2003); http://dx.doi.org/10.1063/1.1613032 (3 pages) | Cited 16 times

Online Publication Date: 23 September 2003

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Scanning capacitance microscopy (SCM) has been performed both in cross-sectional and in angle-beveling configurations on ultranarrow B spikes with a full width at half-maximum smaller than the SCM probe diameter. The dependence of the SCM response on the magnification factor has been studied, demonstrating an improvement both in terms of spatial resolution and sensitivity by angle-beveling sample preparation. The range of applicability of the direct inversion approach for the quantification of SCM profiles on ultranarrow B spikes has been assessed for high doping spikes thicker than 3 nm and measured on bevel. Two-dimensional simulations allowed the reproduction of all the main features of the experimental SCM profiles. © 2003 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
81.05.Cy Elemental semiconductors
61.72.S- Impurities in crystals
06.60.Ei Sample preparation (including design of sample holders)

Shot noise in frustrated single-electron arrays

Daniel M. Kaplan, Victor A. Sverdlov, and Konstantin K. Likharev

Appl. Phys. Lett. 83, 2662 (2003); http://dx.doi.org/10.1063/1.1613359 (3 pages)

Online Publication Date: 23 September 2003

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We have carried out numerical simulations of shot noise in two-dimensional arrays of single-electron islands with random background charges. The results show that in contrast with the one-dimensional arrays, at low currents the current noise is strongly colored, and its spectral density levels off at very low frequencies. The Fano factor F may be much larger than unity, due to the remnants of single-electron/hole avalanches. However, even very small thermal fluctuations reduce F below 1 for almost any bias. © 2003 American Institute of Physics.
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85.35.Gv Single electron devices
73.21.La Quantum dots
73.63.Kv Quantum dots
72.70.+m Noise processes and phenomena

ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

Y. F. Chan, X. F. Duan, S. K. Chan, I. K. Sou, X. X. Zhang, and N. Wang

Appl. Phys. Lett. 83, 2665 (2003); http://dx.doi.org/10.1063/1.1615293 (3 pages) | Cited 59 times

Online Publication Date: 23 September 2003

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We report molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters (∼10 nm) on GaP(111) substrates. The growth process was based on the Au-catalyzed vapor-liquid-solid deposition. As determined by electron microdiffraction and high-resolution transmission electron microscopy, ZnSe nanowires grew generally along the 〈110〉 and 〈112〉 directions with the orientation relationship of (111)ZnSe wire//(111)GaP and 〈1math0〉ZnSe wire//〈1math0〉GaP. The dominant defects were found to be twins at the interface between the substrate and the nanowires along the (111) plane. © 2003 American Institute of Physics.
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68.65.La Quantum wires (patterned in quantum wells)
61.72.Mm Grain and twin boundaries
68.37.Lp Transmission electron microscopy (TEM)

Nonuniformities in GaN/AlN quantum wells

K. A. Mkhoyan, J. Silcox, H. Wu, W. J. Schaff, and L. F. Eastman

Appl. Phys. Lett. 83, 2668 (2003); http://dx.doi.org/10.1063/1.1614439 (3 pages) | Cited 3 times

Online Publication Date: 23 September 2003

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Composition sensitive annular dark field imaging and electron energy-loss spectroscopy were used to determine long-range uniformities of GaN quantum wells and the sharpness of their interfaces grown in AlN matrix by molecular beam epitaxy. Low magnification annular dark field images reveal waviness along the growth plane with a period of ∼50 nm and a height ∼20 nm in one sample and significant changes of the long-range uniformity in the other. Measurements of the changes in energy-loss spectra of the Al L2,3, Ga L2,3, and N K edge across quantum well indicate that the interfaces between the quantum wells and the barriers are in most cases almost atomically sharp. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
79.20.Uv Electron energy loss spectroscopy

Vacuum breakdown of carbon-nanotube field emitters on a silicon tip

J. C. She, N. S. Xu, S. Z. Deng, Jun Chen, H. Bishop, S. E. Huq, L. Wang, D. Y. Zhong, and E. G. Wang

Appl. Phys. Lett. 83, 2671 (2003); http://dx.doi.org/10.1063/1.1614437 (3 pages) | Cited 25 times

Online Publication Date: 23 September 2003

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Findings are given from the experimental observation of the vacuum breakdown of carbon-nanotube (CNT) field emitters on a Si tip. The CNTs were grown on the apex of a Si microtip by microwave plasma-enhanced chemical vapor deposition. The electrical contact of the CNT-Si junction was shown to be of ohmic type. A fine tungsten microprobe in combination with a scanning electron microscopy (SEM) system was employed for both the field emission and the contact conductivity measurements. This arrangement allows to precisely measure the characteristics of individual CNT and to in situ inspect the morphology of the CNT emitters on Si tips before and after vacuum breakdown events. An upper limit in emission current density of ∼ 103 A/m2 from the CNT emitters was recorded before a vacuum breakdown event is initiated. Clear evidence was found to show that the vacuum breakdown of the CNTs results in melting of the Si tip. These findings enhance the understanding of the failure mechanism of CNT emitters. It also has important technical implication to the development of ultrabright electron source. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
85.35.Kt Nanotube devices
77.22.Jp Dielectric breakdown and space-charge effects
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Time-resolved dynamics in single InGaN quantum dots

James W. Robinson, James H. Rice, Anas Jarjour, Jonathan D. Smith, Robert A. Taylor, Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers, Colin J. Humphreys, and Yasuhiko Arakawa

Appl. Phys. Lett. 83, 2674 (2003); http://dx.doi.org/10.1063/1.1614831 (3 pages) | Cited 27 times

Online Publication Date: 23 September 2003

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We present measurements of photoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the nonexponential recombination dynamics seen in the two-dimensional wetting layer. The lifetimes of single dots in the temperature range 4 to 60 K decrease with increasing temperature. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Metal-doped magic clusters of Si, Ge, and Sn: The finding of a magnetic superatom

Vijay Kumar and Yoshiyuki Kawazoe

Appl. Phys. Lett. 83, 2677 (2003); http://dx.doi.org/10.1063/1.1609661 (3 pages) | Cited 46 times

Online Publication Date: 23 September 2003

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Studies on divalent-metal (M)-atom-doped XNM (X = Si, Ge, and Sn, N = 8–12 and 14) clusters, using ab initio pseudopotential plane wave method, show that the well known nine- and ten-atom capped prism units as well as 12- and 14-atom clusters of these elements can transform to magic clusters with higher symmetries and larger highest occupied–lowest unoccupied molecular orbital gaps. Most strikingly doping of X12 with Mn leads to an icosahedral superatom, MnX12, X = Ge and Sn with a high magnetic moment of 5 μB, enriching the family of M-doped clusters of semiconductors for possible nanodevice applications. © 2003 American Institute of Physics.
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73.22.-f Electronic structure of nanoscale materials and related systems
61.46.-w Structure of nanoscale materials
75.50.Tt Fine-particle systems; nanocrystalline materials
31.15.A- Ab initio calculations
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

Single-electron AND/NAND logic circuits based on a self-organized dot network

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui

Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages) | Cited 10 times

Online Publication Date: 23 September 2003

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We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic vapor-phase epitaxy technique. Single-electron logic operations using four cooperating single-electron tunneling (SET) transistors has been tested. This logic circuit has an architecture based on a binary decision diagram (BDD) using a Coulomb blockade (CB) in GaAs QDs, which is a representation of digital logic functions using directed graphs. BDD node devices consisting of two SET transistors achieved a two-way path switching operation in single-electron mode due to the CB effects which appeared complementarily in the two SET transistors at 1.9 K. We also demonstrated an AND/NAND operation in a logic circuit by integrating two BDD nodes. © 2003 American Institute of Physics.
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85.35.Gv Single electron devices
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
84.30.Sk Pulse and digital circuits
73.63.Kv Quantum dots
81.07.Ta Quantum dots
81.16.Dn Self-assembly

Nanoparticle-assisted microwave absorption by single-wall carbon nanotubes

A. Wadhawan, D. Garrett, and J. M. Perez

Appl. Phys. Lett. 83, 2683 (2003); http://dx.doi.org/10.1063/1.1615679 (3 pages) | Cited 69 times

Online Publication Date: 23 September 2003

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We report the effects of microwave irradiation on both unpurified and purified iron-catalyzed high-pressure disproportionation (HiPco)-grown single-walled carbon nanotubes (SWNTs) in ultrahigh vacuum. Under microwave irradiation, we observe that unpurified HiPco SWNTs quickly reach temperatures of approximately 1850 °C. As a result, H2, H2O, CO, CO2, and CH4 gases are observed, and the Fe catalyst nanoparticles melt and coalesce into larger crystallites approximately four times their original diameter. In contrast, carbon black and purified HiPco SWNTs heat up to temperatures of 500–650 °C. We propose that the significant heating of unpurified HiPco SWNTs is due to the Fe catalysts. © 2003 American Institute of Physics.
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61.82.Rx Nanocrystalline materials
61.46.-w Structure of nanoscale materials
61.80.-x Physical radiation effects, radiation damage
81.07.De Nanotubes

Mode control by nanoengineering light emitters in spherical microcavities

B. Möller, U. Woggon, M. V. Artemyev, and R. Wannemacher

Appl. Phys. Lett. 83, 2686 (2003); http://dx.doi.org/10.1063/1.1615681 (3 pages) | Cited 12 times

Online Publication Date: 23 September 2003

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Quantum-confined semiconductor nanorods are used as highly polarized nanoemitters to actively control the polarization state of microcavity photons. A wet-chemical method to tangentially align CdSe nanorods on a polymer surface is applied to a spherical R ≈ 2λ-microcavity. The cavity emission is studied by imaging spectroscopy and polarization-sensitive mode mapping. The efficient confinement of photons spontaneously emitted by nanorods into single transverse electric (TE) cavity modes is achieved while transverse magnetic modes are suppressed. A microscopic tricolor TE-emitter operating at room temperature in the visible spectral range is demonstrated. © 2003 American Institute of Physics.
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42.72.-g Optical sources and standards
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Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee, J. H. Kim, and Seongil Im

Appl. Phys. Lett. 83, 2689 (2003); http://dx.doi.org/10.1063/1.1613997 (3 pages) | Cited 46 times

Online Publication Date: 23 September 2003

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We report on the fabrication of pentacene thin-film transistors (TFTs) with Al2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass by rf magnetron sputtering at room temperature. Although the Al2O3+x was expected to show lower capacitance and breakdown field than stoichiometric Al2O3, our pentacene TFTs with optimized thin Al2O3+x gate dielectric exhibited a moderately high field mobility of 0.14 cm2/V s, an outstanding subthreshold slope of 0.88 V/dec, and an on/off ratio over 106. Our work demonstrates that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
73.50.Dn Low-field transport and mobility; piezoresistance

Dominance of deep over shallow donors in ZnO-based varistors

D. Fernández-Hevia, J. de Frutos, A. C. Caballero, and J. F. Fernández

Appl. Phys. Lett. 83, 2692 (2003); http://dx.doi.org/10.1063/1.1608466 (3 pages) | Cited 7 times

Online Publication Date: 23 September 2003

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Broadband admittance spectroscopy measurements of ZnO-based varistors are analyzed in terms of charge transport theory through double Schottky barriers, hence obtaining empirical evidence about the nonmajority of the shallow donor in n-type ZnO. The dominant defect species is found to be a deep donor, which agrees with recent first-principles calculations. This result consistently explains the observed frequency-domain non-Debye and time-domain nonexponential electrical response, and invalidates a key assumption underlying various electrical characterization studies of this material. We find two deep levels with fine structures. These fine structures are attributable to fluctuating chemical environments around the defects. © 2003 American Institute of Physics.
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85.30.-z Semiconductor devices
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature

Jung-Hui Tsai

Appl. Phys. Lett. 83, 2695 (2003); http://dx.doi.org/10.1063/1.1615313 (3 pages) | Cited 2 times

Online Publication Date: 23 September 2003

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Sequential resonant-tunneling behavior of a resonant-tunneling bipolar transistor with five-period i-InP/n-InGaAs superlattice emitter has been demonstrated. An interesting multiple negative differential resistance (NDR) phenomena resulting from the creation and extension of the high-field domain in a superlattice is observed at room temperature. Furthermore, the employing of a thin n-InGaAs emitter layer between an InP/InGaAs superlattice and p+-InGaAs base layer helps to lower the potential spike at the base–emitter junction and the reduce neutral–emitter recombination current. Experimentally, transistor performance, incorporating multiple NDR, with a relatively large current gain of 454 and an offset voltage as low as 80 mV, is achieved. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
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Suspended microchannel resonators for biomolecular detection

T. P. Burg and S. R. Manalis

Appl. Phys. Lett. 83, 2698 (2003); http://dx.doi.org/10.1063/1.1611625 (3 pages) | Cited 52 times

Online Publication Date: 23 September 2003

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We present a resonant mass sensor for specific biomolecular detection in a subnanoliter fluid volume. The sensing principle is based on measuring shifts in resonance frequency of a suspended microfluidic channel upon accumulation of molecules on the inside walls of the device. Confining the fluid to the inside of a hollow cantilever enables direct integration with conventional microfluidic systems, significantly increases sensitivity by eliminating high damping and viscous drag, and allows the resonator to be actuated by electrostatic forces. Fluid density measurements reveal a mass resolution of 10−17 g/μm2 in a 4 mHz–4 Hz bandwidth. To demonstrate biomolecular detection, we present real-time measurements of the specific binding between avidin and biotinylated bovine serum albumin. Based on these measurements, we expect that changes in surface mass loading on the order of 10−19 g/μm2 can be detected in an optimized system. © 2003 American Institute of Physics.
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87.80.-y Biophysical techniques (research methods)
06.30.Dr Mass and density
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Dynamics of liposomes gene vectors studied by anelastic spectroscopy

C. Castellano, D. Pozzi, G. Caracciolo, and R. Cantelli

Appl. Phys. Lett. 83, 2701 (2003); http://dx.doi.org/10.1063/1.1611651 (3 pages) | Cited 6 times

Online Publication Date: 23 September 2003

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The anelastic spectra of synthetic liposomes interesting for gene transfection have been measured in a wide temperature range; in particular, we have studied the cationic/neutral lipid mixture di-oleoyl trimethylammonium propane/di-oleoyl phosphatidylethanolamine at different molar ratios. This technique has been applied on thin films of biological samples deposited on a solid substrate like Si 〈100〉. We have evidenced the presence of two relaxation processes around and below 200 K, likely connected with a cooperative dynamics of the water plus membrane system. In particular, the process centered at 198 K results to be clearly a favorite by the presence of two different lipidic species. © 2003 American Institute of Physics.
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87.14.Cc Lipids
87.16.D- Membranes, bilayers, and vesicles
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Air-coupled acoustic imaging with zero-group-velocity Lamb modes

Stephen D. Holland and D. E. Chimenti

Appl. Phys. Lett. 83, 2704 (2003); http://dx.doi.org/10.1063/1.1613046 (3 pages) | Cited 20 times

Online Publication Date: 23 September 2003

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A Lamb wave resonance has been found that allows unusually efficient transmission of airborne sound waves through plates. This occurs at the zero-group-velocity point at the frequency minimum of the first-order symmetric (S1) Lamb mode. At this frequency, plane waves with a range of incident angles can couple between the air and the Lamb mode in the solid plate, dominating the spectrum of transmitted focused sound beams by 10 dB or more. We use this frequency for C-scan imaging, and demonstrate the detection of both a 3.2-mm-diameter buried flaw and a subwavelength thickness changes of .005λ (1%). © 2003 American Institute of Physics.
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43.60.Lq Acoustic imaging, displays, pattern recognition, feature extraction
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
43.35.Pt Surface waves in solids and liquids

Enhanced dynamic response of the photoinduced nematic–isotropic transition in a polymer matrix

K. L. Sandhya, S. Krishna Prasad, and Geetha G. Nair

Appl. Phys. Lett. 83, 2707 (2003); http://dx.doi.org/10.1063/1.1614844 (3 pages) | Cited 5 times

Online Publication Date: 23 September 2003

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We have investigated the dynamic response of the photoinduced nematic–isotropic transition and the thermal back relaxation process of a liquid crystal with photoactive molecules embedded in a polymer matrix. The results show that the presence of the polymer matrix leads to a dramatic improvement in the response time. Possible causes for this finding have been discussed. © 2003 American Institute of Physics.
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64.70.M- Transitions in liquid crystals
42.70.Df Liquid crystals

Study of the cross-sectional profile in selective formation of porous silicon

Han-Su Kim, Kyuchul Chong, and Ya-Hong Xie

Appl. Phys. Lett. 83, 2710 (2003); http://dx.doi.org/10.1063/1.1613995 (3 pages) | Cited 3 times

Online Publication Date: 23 September 2003

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Porous Si is the semi-insulating state of Si, with low thermal expansion mismatch with bulk Si. As a result, it is an excellent material for crosstalk isolation in mixed-signal integrated circuits. We study the formation of isolated porous Si regions in p−-type and p+-type Si substrates with emphasis on the cross-sectional profile of the porous regions. Our study reveals that in addition to the primary undercut due to the isotropic nature of the anodization process, there exists a secondary undercut that is similar in shape to the bird’s beak commonly observed at the edge of field oxides in conventional Si complementary-metal-oxide-semiconductor process. The shape and the extent of the secondary undercut are dependent on the type of mask materials used during selective formation of porous Si as well as the substrate resistivity. The combined experimental and simulation studies pointed to two likely origins of secondary undercuts: the weak adhesion of some of the mask materials and current crowding in bulk Si substrates near the edge of the mask openings. Secondary undercuts result in the erosion of the precious Si chip surface area when a porous Si trench is used for rf crosstalk isolation, and should be minimized. © 2003 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials
81.65.-b Surface treatments
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Giant Goos-Hänchen effect at the reflection from left-handed metamaterials

Ilya V. Shadrivov, Alexander A. Zharov, and Yuri S. Kivshar

Appl. Phys. Lett. 83, 2713 (2003); http://dx.doi.org/10.1063/1.1615678 (3 pages) | Cited 88 times

Online Publication Date: 23 September 2003

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We study the beam reflection from a layered structure with a left-handed metamaterial. We predict a giant lateral (Goos-Hänchen) shift and splitting of the beam due to the resonant excitation of surface polaritons with a vortexlike energy flow between the right- and left-handed materials. © 2003 American Institute of Physics.
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78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
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Comment on “Ferromagnetism in Cr-doped Ge” [Appl. Phys. Lett. 81, 3606 (2002)]

G. Kioseoglou, A. T. Hanbicki, and B. T. Jonker

Appl. Phys. Lett. 83, 2716 (2003); http://dx.doi.org/10.1063/1.1606890 (2 pages) | Cited 11 times

Online Publication Date: 23 September 2003

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Abstract Unavailable
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Dd Nonmetallic ferromagnetic materials
64.75.-g Phase equilibria
75.50.Pp Magnetic semiconductors
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Erratum: “Morphological and mechanical properties of carbon-nanotube-reinforced semicrystalline and amorphous polymer composites” [Appl. Phys. Lett. 81, 5123 (2002)]

M. Cadek, J. N. Coleman, V. Barron, K. Hedicke, and W. J. Blau

Appl. Phys. Lett. 83, 2718 (2003); http://dx.doi.org/10.1063/1.1609255 (1 page)

Online Publication Date: 23 September 2003

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Abstract Unavailable
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99.10.Cd Errata
62.25.-g Mechanical properties of nanoscale systems
62.20.Qp Friction, tribology, and hardness
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
FREE

Erratum: “Transparent-cathode for top-emission organic light-emitting diodes” [Appl. Phys. Lett. 82, 2715 (2003)]

S. Han, X. Feng, Z. H. Lu, D. Johnson, and R. Wood

Appl. Phys. Lett. 83, 2719 (2003); http://dx.doi.org/10.1063/1.1614436 (1 page) | Cited 1 time

Online Publication Date: 23 September 2003

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Abstract Unavailable
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99.10.Cd Errata
85.60.Jb Light-emitting devices
85.45.Db Field emitters and arrays, cold electron emitters
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