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29 Sep 2003

Volume 83, Issue 13, pp. 2503-2719

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Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages)

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui
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Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee, J. H. Kim, and Seongil Im

Appl. Phys. Lett. 83, 2689 (2003); http://dx.doi.org/10.1063/1.1613997 (3 pages) | Cited 46 times

Online Publication Date: 23 September 2003

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We report on the fabrication of pentacene thin-film transistors (TFTs) with Al2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass by rf magnetron sputtering at room temperature. Although the Al2O3+x was expected to show lower capacitance and breakdown field than stoichiometric Al2O3, our pentacene TFTs with optimized thin Al2O3+x gate dielectric exhibited a moderately high field mobility of 0.14 cm2/V s, an outstanding subthreshold slope of 0.88 V/dec, and an on/off ratio over 106. Our work demonstrates that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
73.50.Dn Low-field transport and mobility; piezoresistance

Dominance of deep over shallow donors in ZnO-based varistors

D. Fernández-Hevia, J. de Frutos, A. C. Caballero, and J. F. Fernández

Appl. Phys. Lett. 83, 2692 (2003); http://dx.doi.org/10.1063/1.1608466 (3 pages) | Cited 7 times

Online Publication Date: 23 September 2003

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Broadband admittance spectroscopy measurements of ZnO-based varistors are analyzed in terms of charge transport theory through double Schottky barriers, hence obtaining empirical evidence about the nonmajority of the shallow donor in n-type ZnO. The dominant defect species is found to be a deep donor, which agrees with recent first-principles calculations. This result consistently explains the observed frequency-domain non-Debye and time-domain nonexponential electrical response, and invalidates a key assumption underlying various electrical characterization studies of this material. We find two deep levels with fine structures. These fine structures are attributable to fluctuating chemical environments around the defects. © 2003 American Institute of Physics.
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85.30.-z Semiconductor devices
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature

Jung-Hui Tsai

Appl. Phys. Lett. 83, 2695 (2003); http://dx.doi.org/10.1063/1.1615313 (3 pages) | Cited 2 times

Online Publication Date: 23 September 2003

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Sequential resonant-tunneling behavior of a resonant-tunneling bipolar transistor with five-period i-InP/n-InGaAs superlattice emitter has been demonstrated. An interesting multiple negative differential resistance (NDR) phenomena resulting from the creation and extension of the high-field domain in a superlattice is observed at room temperature. Furthermore, the employing of a thin n-InGaAs emitter layer between an InP/InGaAs superlattice and p+-InGaAs base layer helps to lower the potential spike at the base–emitter junction and the reduce neutral–emitter recombination current. Experimentally, transistor performance, incorporating multiple NDR, with a relatively large current gain of 454 and an offset voltage as low as 80 mV, is achieved. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
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