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29 Sep 2003

Volume 83, Issue 13, pp. 2503-2719

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages)

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui
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Dielectric response of relaxor ferroelectrics in the time-domain

Hyun M. Jang

Appl. Phys. Lett. 83, 2635 (2003); http://dx.doi.org/10.1063/1.1613050 (3 pages) | Cited 1 time

Online Publication Date: 23 September 2003

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Dielectric response of relaxor ferroelectrics was analyzed in the time-domain by evaluating the relaxation-time (τ) distribution of Pb(Mg1/3Nb2/3)O3-10 mol % PbTiO3 using the method of Tikhonov regularization. The distribution function g(τ) became exponentially broad and flat as temperature approached a certain critical point ( ∼ 230 K), indicating the advent of the frozen polar domains with infinitely long τ in a matrix of the thermally activated dynamic polar domains. The dielectric response of the high-temperature relaxation part was then separately estimated with the help of the two-states-polarization model. The estimated g(τ) of the relaxation part showed logarithmic Gaussian behavior, which manifested an ergodicity in the thermally activated flips of dynamic polarizations at high temperatures. In contrast to this, a resonance kernel was postulated to describe the dielectric response of the frozen polar domains at lower temperatures. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

M. Lee, Z.-H. Lu, W.-T. Ng, D. Landheer, X. Wu, and S. Moisa

Appl. Phys. Lett. 83, 2638 (2003); http://dx.doi.org/10.1063/1.1608488 (3 pages) | Cited 39 times

Online Publication Date: 23 September 2003

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The interface growth by oxygen diffusion has been investigated for 5 nm thick HfOxNy gate-quality dielectric films deposited on Si(100) by low-pressure pulsed metalorganic chemical vapor deposition. Analysis by x-ray photoelectron spectroscopy of the films deposited using the precursor tetrakis (diethylamido) hafnium with O2 showed that the films contained 4 at. % nitrogen. This increased to 11 at. % N when NO was used as the oxidant. Significant growth of the interface layer was observed for films exposed to air at ambient temperature and lower rates of growth were observed for vacuum annealed films and those with the higher N content. For films annealed in O2 at temperatures in the range 600–900 °C, the activation energies of the interfacial growth were 0.36 and 0.25 eV for N concentrations of 11 and 4 at. %, respectively. The results were interpreted in terms of atomic oxygen formation in the bulk and reaction at the interface. The increase in N incorporation from 4 to 11 at. % increases the crystallization temperature from between 500 and 600 °C to between 600 and 700 °C. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.A- Nucleation and growth
61.72.Cc Kinetics of defect formation and annealing

Rayleigh type behavior of the Young's modulus of unpoled ferroelectric ceramics and its dependence on temperature

M. Algueró, B. Jiménez, and L. Pardo

Appl. Phys. Lett. 83, 2641 (2003); http://dx.doi.org/10.1063/1.1614414 (3 pages) | Cited 9 times

Online Publication Date: 23 September 2003

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The dependence on stress of the low frequency Young's modulus and mechanical losses of unpoled ferroelectric ceramics has been studied as a function of temperature. The Young's modulus of unpoled Pb(Zr,Ti)O3 (PZT) showed a Rayleigh type dependence, analogous to the one already described for the longitudinal piezoelectric coefficient. This has been associated to ferroelectric/ferroelastic domain wall movements across, and their pinning/depinning on, randomly distributed defects. The Rayleigh coefficient was found to increase with temperature. The activation energy of the Rayleigh process was obtained, which must be related to the pinning energy. The Young's modulus of Mn doped 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 showed no stress dependence. © 2003 American Institute of Physics.
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62.20.D- Elasticity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Calculation of effective dielectric constants for advanced interconnect structures with low-k dielectrics

Seung-Hyun Rhee, Martin D. Radwin, Man Fai Ng, Jeremy I. Martin, and Darrell Erb

Appl. Phys. Lett. 83, 2644 (2003); http://dx.doi.org/10.1063/1.1614438 (3 pages) | Cited 5 times

Online Publication Date: 23 September 2003

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Effective dielectric constants of advanced interconnects with low-k and ultra-low-k dielectrics were evaluated by two-dimensional capacitance analysis. The analysis was performed for interconnect design rules proposed for 65 nm node high-performance integration. Interconnects with various pitches and integration schemes were examined, and the effects of supporting dielectric layers including cap layer, chemical mechanical polishing stop layer, and etch stop layer were evaluated. The results indicated that the use of the supporting layers greatly affects the effective dielectric constant of interconnect structures. The impacts of the supporting dielectric layers on the effective dielectric constant were evaluated quantitatively, and the implications on back-end-of-line integration schemes were discussed. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
77.22.Ch Permittivity (dielectric function)

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

Hyoungsub Kim, Chi On Chui, Krishna C. Saraswat, and Paul C. McIntyre

Appl. Phys. Lett. 83, 2647 (2003); http://dx.doi.org/10.1063/1.1613031 (3 pages) | Cited 64 times

Online Publication Date: 23 September 2003

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High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ∼55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (∼10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance–voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density. © 2003 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Observation of domain walls in PbZr0.2Ti0.8O3 thin film using scanning nonlinear dielectric microscopy

K. Matsuura, Y. Cho, and R. Ramesh

Appl. Phys. Lett. 83, 2650 (2003); http://dx.doi.org/10.1063/1.1609252 (3 pages) | Cited 11 times

Online Publication Date: 23 September 2003

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Using scanning nonlinear dielectric microscopy (SNDM), we measured the linear dielectric constant of a domains (c axis in the plane of the film) and c domains (c axis perpendicular to the film surface) in PbZr0.2Ti0.8O3 (PZT) thin film to confirm that the dielectric constant of the a domain is higher than that of the c domain. We observed 90° a–c domain walls and 180° c–c domain walls and found that, experimentally, the 180° c–c domain wall was smaller than the 90° a–c domain wall. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
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