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29 Sep 2003

Volume 83, Issue 13, pp. 2503-2719

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Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages)

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui
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A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions

Z. Y. Liu, T. F. Kuech, and D. A. Saulys

Appl. Phys. Lett. 83, 2587 (2003); http://dx.doi.org/10.1063/1.1613994 (3 pages) | Cited 15 times

Online Publication Date: 23 September 2003

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We report a nonaqueous passivation regime consisting of Na2S/benzene/15-crown-5/oxidant. The use of a nonpolar, aprotic organic medium required the addition of a specific chelating agent (15-crown-5) to solubilize sodium sulfide, and organic oxidizing agents (anthraquinone, benzophenone, etc.) to act as electron acceptors. The surface optical and chemical properties of GaSb surfaces after aqueous and nonaqueous sulfide treatments were compared. Nonaqueous passivation resulted in higher photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than aqueous passivation. The PL intensity from passivated surfaces was correlated with the standard reduction potentials of electron acceptors. © 2003 American Institute of Physics.
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81.65.Rv Passivation
68.35.Dv Composition, segregation; defects and impurities
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states
81.05.Ea III-V semiconductors

Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells

B. Arnaudov, T. Paskova, O. Valassiades, P. P. Paskov, S. Evtimova, B. Monemar, and M. Heuken

Appl. Phys. Lett. 83, 2590 (2003); http://dx.doi.org/10.1063/1.1613999 (3 pages) | Cited 1 time

Online Publication Date: 23 September 2003

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We study longitudinal electron transport in InGaN/GaN multiple quantum wells (MQWs) at moderate magnetic fields. We observe a stepwise behavior of both the Hall coefficient and magnetoresistivity. The peculiarities are explained by a magnetic-field-induced localization of electrons in a two-dimensional (2D) potential relief of the InGaN MQW due to composition fluctuations. We extend the model for a magnetic localization of electrons, treating every QW like a quasi-2D system with a cylindrical potential relief. The calculated values of the decrease of the sheet electron concentrations in a magnetic field based on such an assumption for 2D density of states in a InGaN MQW system are in good accordance with the experimentally obtained values. © 2003 American Institute of Physics.
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73.21.Fg Quantum wells
73.63.Hs Quantum wells
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.20.At Surface states, band structure, electron density of states

Low Schottky barriers on n-type silicon (001)

Meng Tao, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, and Wiley P. Kirk

Appl. Phys. Lett. 83, 2593 (2003); http://dx.doi.org/10.1063/1.1613357 (3 pages) | Cited 29 times

Online Publication Date: 23 September 2003

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It has been reported that no metal shows a Schottky barrier of less than 0.4 eV on n-type silicon (001). This is attributed to interface states between metal and silicon (001), which pin the interface Fermi level and make the Schottky barrier more or less independent of the metal work function. We demonstrate that, by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium, low Schottky barriers can be obtained on n-type silicon (001). Aluminum and chromium show barrier heights of 0.08 and 0.26 eV on n-type silicon (001), respectively. These results agree well with the ideal Schottky barrier heights for aluminum and chromium on n-type silicon (001), but are significantly different from the experimental barrier heights known for four decades for these metals on n-type silicon (001). © 2003 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
73.20.At Surface states, band structure, electron density of states

Impedance up to 6 GHz in La0.67Sr0.33MnO3 thin films

L. Reversat, P. Crozat, R. Lyonnet, C. Dupas, and J.-P. Contour

Appl. Phys. Lett. 83, 2596 (2003); http://dx.doi.org/10.1063/1.1606868 (3 pages) | Cited 4 times

Online Publication Date: 23 September 2003

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The ac electrical impedance of a 400-nm-thick La0.67Sr0.33MnO3 thin film (on MgO) has been measured in the frequency range from 30 MHz up to 6 GHz using etched strips. The impedance is found to be nearly a constant resistance that is equal to the dc resistance. The only deviations, in the order of their magnitude, are: (i) the contact pad impedance at low frequency, (ii) a small inductive part in the impedance of the material, and (iii) a low decrease of the resistance above 3 GHz. © 2003 American Institute of Physics.
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73.50.Mx High-frequency effects; plasma effects
72.30.+q High-frequency effects; plasma effects
72.20.Fr Low-field transport and mobility; piezoresistance
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films

GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

W. H. Sun, J. W. Yang, C. Q. Chen, J. P. Zhang, M. E. Gaevski, E. Kuokstis, V. Adivarahan, H. M. Wang, Z. Gong, M. Su, and M. Asif Khan

Appl. Phys. Lett. 83, 2599 (2003); http://dx.doi.org/10.1063/1.1614835 (3 pages) | Cited 26 times

Online Publication Date: 23 September 2003

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We investigated the growth of GaN/Al0.20Ga0.80N multiple quantum wells (MQWs) on selective-area-grown a-plane GaN pillars over r-plane sapphire. In contrast to the MQWs grown on planar a-plane GaN templates, these GaN/Al0.20Ga0.8N MQWs on the pillars exhibited pit-free and atomically smooth surface morphology. Their structural quality and their UV emission (at 357 nm) increased with the underlying pillar height. The epitaxy of GaN/AlGaN MQWs on the selective-area-grown pillars is thus a promising and simple approach for fabricating stripe-geometry, high-efficiency, nonpolar UV emitters. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
68.65.Fg Quantum wells

Kelvin probe spectroscopy of a two-dimensional electron gas below 300 mK

T. Vančura, S. Kičin, T. Ihn, K. Ensslin, M. Bichler, and W. Wegscheider

Appl. Phys. Lett. 83, 2602 (2003); http://dx.doi.org/10.1063/1.1614836 (3 pages) | Cited 10 times

Online Publication Date: 23 September 2003

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A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in a Ga[Al]As heterostructure. At different separations between atomic force microscope tip and sample, a dc voltage is applied between the tip and the electron gas while simultaneously recording the frequency shift of the oscillating tip. Using a plate capacitor model, the local electron density can be extracted from the data. The result coincides within 10% with the data obtained from transport measurements. © 2003 American Institute of Physics.
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73.63.-b Electronic transport in nanoscale materials and structures

Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO

Wei He and T. P. Ma

Appl. Phys. Lett. 83, 2605 (2003); http://dx.doi.org/10.1063/1.1614837 (3 pages) | Cited 12 times

Online Publication Date: 23 September 2003

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We have studied inelastic electron tunneling spectroscopy (IETS) in silicon metal-oxide-semiconductor systems with HfO2 and aluminum-doped HfO2 (HfAlO) as gate dielectrics. Samples with a thermal SiO2 layer ( ∼ 2 nm) were used to obtain reference spectra for the study. Information on chemical bonding structures and compositions of ultrathin HfO2 and HfAlO has been revealed by the IETS data. The bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Ty Semiconductor-insulator-semiconductor structures
77.55.-g Dielectric thin films

Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, V. N. Danilin, T. A. Zhukova, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, and S. J. Pearton

Appl. Phys. Lett. 83, 2608 (2003); http://dx.doi.org/10.1063/1.1614839 (3 pages) | Cited 10 times

Online Publication Date: 23 September 2003

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Sc2O3 thin-film layers deposited by rf plasma-assisted molecular-beam epitaxy were found to significantly reduce the concentration of prominent surface traps with activation energies of 1 and 0.9 eV on AlGaN/GaN high electron mobility transistors (HEMTs). The surface passivation is accompanied by effective mitigation of the current collapse observed under rf conditions in HEMTs without Sc2O3. The passivation is stable to post-deposition annealing temperatures of 400 °C and device degradation at higher temperatures is due to reaction of the gate metal with the AlGaN. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.Rv Passivation
61.72.Cc Kinetics of defect formation and annealing

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Moongyu Jang, Jihun Oh, Sunglyul Maeng, Wonju Cho, Seongjae Lee, Kicheon Kang, and Kyoungwan Park

Appl. Phys. Lett. 83, 2611 (2003); http://dx.doi.org/10.1063/1.1614441 (3 pages) | Cited 17 times

Online Publication Date: 23 September 2003

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The current–voltage characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTTs) are discussed. The n-type SBTTs with 60 nm gate lengths shows typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 105 at low drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current, respectively. This phenomenon is explained by using drain induced Schottky barrier thickness thinning effect. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling

Magneto-optical properties of GaAsSb/GaAs quantum wells

R. T. Senger, K. K. Bajaj, E. D. Jones, N. A. Modine, K. E. Waldrip, F. Jalali, J. F. Klem, G. M. Peake, X. Wei, and S. W. Tozer

Appl. Phys. Lett. 83, 2614 (2003); http://dx.doi.org/10.1063/1.1615680 (3 pages) | Cited 7 times

Online Publication Date: 23 September 2003

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We have measured the diamagnetic shift of a heavy-hole exciton in a single 60 Å wide GaAs0.7Sb0.3/GaAs quantum well as a function of magnetic field up to 32 T at 1.3 K using photoluminescence spectroscopy. The sample was grown on (001)-oriented GaAs substrate using solid-source molecular beam epitaxy. We have calculated the variation of the diamagnetic shift as a function of magnetic field using a variational approach and a free exciton model. We assumed a weak type-I conduction-band lineup in our calculations. We found that the values thus obtained are more than twice as large as the observed values. A similar calculation assuming a complete localization of the heavy hole leads to the values of the diamagnetic shift which agree very well with the experimental data. Our study suggests that the excitons are strongly localized in GaAs0.7Sb0.3/GaAs quantum well structures at low temperatures, and that this heterostructure has a weak type-I conduction-band lineup. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.20.Ls Magneto-optical effects
78.55.Cr III-V semiconductors
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
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