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29 Sep 2003

Volume 83, Issue 13, pp. 2503-2719

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Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages)

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui
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Magnetic domain wall motion triggered by an electric current

M. Tsoi, R. E. Fontana, and S. S. P. Parkin

Appl. Phys. Lett. 83, 2617 (2003); http://dx.doi.org/10.1063/1.1578165 (3 pages) | Cited 93 times

Online Publication Date: 23 September 2003

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The current-induced propagation of magnetic domain walls is studied in CoFe nanoconstrictions patterned by electron beam lithography. Propagation of the walls was confirmed by magnetic force microscopy imaging. The device geometry allows us to distinguish between various mechanisms of interaction between electric current and domain walls: a mechanism in which spin transfer associated with current traversing a domain wall dominates. As expected for such a mechanism the domain wall propagation occurs in the direction of electron current flow and has a current threshold of the order ∼ 1011 A/m2. © 2003 American Institute of Physics.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Bb Fe and its alloys

Temperature dependence of the switching field and its distribution function in Fe-based bistable microwires

R. Varga, K. L. Garcia, A. Zhukov, M. Vazquez, and P. Vojtanik

Appl. Phys. Lett. 83, 2620 (2003); http://dx.doi.org/10.1063/1.1613048 (3 pages) | Cited 22 times

Online Publication Date: 23 September 2003

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The switching field distribution for magnetization reversal in a single Barkhausen jump of a bistable Fe-based amorphous microwire as well as its temperature dependence have been investigated in the temperature range from 77 to 450 K. Two processes have been identified to be responsible for the temperature dependence of the switching field: magnetostrictive volume domain wall pinning on stresses and relaxation effects due to local structural rearrangements. While at low temperatures, pinning on the atomic level defects plays the dominant role, magnetostrictive pinning becomes more important at intermediate temperatures. A simple model is proposed considering both energy contributions that fits reasonably well with experimental data and allows us to interpret additionally the observed temperature dependence of the switching field fluctuations. © 2003 American Institute of Physics.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Jk Magnetization reversal mechanisms
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure
75.80.+q Magnetomechanical effects, magnetostriction

Enhanced magnetoresistance in the complex perovskite LaCu3Mn4O12

J. A. Alonso, J. Sánchez-Benítez, A. De Andrés, M. J. Martínez-Lope, M. T. Casais, and J. L. Martínez

Appl. Phys. Lett. 83, 2623 (2003); http://dx.doi.org/10.1063/1.1611647 (3 pages) | Cited 35 times

Online Publication Date: 23 September 2003

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Moderate-pressure techniques (P = 2 GPa) have been used to prepare the complex LaCu3Mn4O12 perovskite. It has been characterized by neutron powder diffraction, magnetic, and magnetotransport measurements. This material is ferrimagnetic below TC = 361 K. The magnetoresistance (MR) is enhanced with respect to that of CaCu3Mn4O12 due to the effective electronic injection that dramatically reduces the bulk resistivity, thus promoting the grain-boundary contribution to the electrical resistance. Values of low-field MR close to 3% at room temperature are achieved for magnetic fields of 1 T. © 2003 American Institute of Physics.
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75.47.Lx Magnetic oxides
75.47.Gk Colossal magnetoresistance
75.50.Gg Ferrimagnetics

Rigid vortices in MgB2

Hao Jin, Hai-Hu Wen, Hai-Peng Yang, Zhi-Yong Liu, Zhi-An Ren, Guang-Can Che, and Zhong-Xian Zhao

Appl. Phys. Lett. 83, 2626 (2003); http://dx.doi.org/10.1063/1.1613035 (3 pages) | Cited 12 times

Online Publication Date: 23 September 2003

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Magnetic relaxation of high-pressure synthesized MgB2 bulks with different thickness is investigated. It is found that the superconducting diamagnetic moment depends on time in a logarithmic way: the flux-creep activation energy decreases linearly with the current density (as expected by Kim–Anderson model) and the activation energy increases linearly with the thickness of sample when it is thinner than about 1 mm. These features suggest that the vortices in the MgB2 are rather rigid, and the pinning and creep can be well described by Kim–Anderson model. © 2003 American Institute of Physics.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Op Mixed states, critical fields, and surface sheaths
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)

Tunnel magnetoresistance in nanojunctions based on Sr2FeMoO6

M. Bibes, K. Bouzehouane, A. Barthélémy, M. Besse, S. Fusil, M. Bowen, P. Seneor, J. Carrey, V. Cros, A. Vaurès, J.-P. Contour, and A. Fert

Appl. Phys. Lett. 83, 2629 (2003); http://dx.doi.org/10.1063/1.1612902 (3 pages) | Cited 47 times

Online Publication Date: 23 September 2003

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We report on the observation of magnetoresistance in a Sr2FeMoO6 (SFMO)-based tunnel junction. This result is obtained by combining a three-step process for the growth of the Sr2FeMoO6 layer by pulsed laser deposition with a technology allowing the definition of nanometer-sized junctions. A clear positive magnetoresistive signal of 50% is obtained at low temperature in a Sr2FeMoO6/SrTiO3/Co junction. Since the SrTiO3/Co interface is known to have a negative spin polarization of about 20%, this result yields a negative spin polarization of SFMO, which we find to amount to more than 85% in our film. This confirms the half-metallic character of this compound, predicted by band structure calculations. © 2003 American Institute of Physics.
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72.25.Mk Spin transport through interfaces
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.50.Dd Nonmetallic ferromagnetic materials

Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN

Jeong Min Baik, Hyung Seok Kim, Chan Gyung Park, and Jong-Lam Lee

Appl. Phys. Lett. 83, 2632 (2003); http://dx.doi.org/10.1063/1.1615676 (3 pages) | Cited 9 times

Online Publication Date: 23 September 2003

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The microstructural evolution of Mn-implanted p-type GaN has been studied using cross-sectional transmission electron microscopy. As Mn3Ga nanoclusters (3–7 nm) with a hexagonal structure were produced by annealing ( ⩽ 800 °C), the weak ferromagnetic property emerged. Higher-temperature annealing ( ≥ 900 °C) reduced the ferromagnetic signal and produced antiferromagnetic Mn-nitride nanoclusters, such as Mn6N2.58 and Mn3N2. This provides evidence that the ferromagnetic property was deeply related to microstructural changes of nanoclusters. © 2003 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
75.50.Pp Magnetic semiconductors
61.46.-w Structure of nanoscale materials
75.50.Tt Fine-particle systems; nanocrystalline materials
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