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29 Sep 2003

Volume 83, Issue 13, pp. 2503-2719

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Appl. Phys. Lett. 83, 2680 (2003); http://dx.doi.org/10.1063/1.1614845 (3 pages)

F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui
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Contraction of aluminum oxide thin layers in optical heterostructures

O. Durand, F. Wyckzisk, J. Olivier, M. Magis, P. Galtier, A. De Rossi, M. Calligaro, V. Ortiz, V. Berger, G. Leo, and G. Assanto

Appl. Phys. Lett. 83, 2554 (2003); http://dx.doi.org/10.1063/1.1612893 (3 pages) | Cited 7 times

Online Publication Date: 23 September 2003

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We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with selective oxidation of AlAs/GaAs epitaxial heterostructures. The average thickness of each layer was determined via x-ray reflectometry before and after oxidation, yielding an induced shrinkage of 11.4%±0.7% normal to the stack. The waveguide refractive indices were evaluated via modal-index measurements in the near-infrared. The achieved accuracy is compatible with form-birefringent phase matching in AlGaAs guided-wave frequency converters. © 2003 American Institute of Physics.
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68.65.Ac Multilayers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Fm Birefringence

Liquid/liquid dynamic phase separation induced by a focused laser

Sada-Atsu Mukai, Nobuyuki Magome, Hiroyuki Kitahata, and Kenichi Yoshikawa

Appl. Phys. Lett. 83, 2557 (2003); http://dx.doi.org/10.1063/1.1613795 (3 pages) | Cited 13 times

Online Publication Date: 23 September 2003

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We found that a focused laser can generate microscopic phase separation in an oil/water system. An oil droplet emerges and grows at the focus of the laser in a water-rich homogeneous medium. In contrast, in an oil-rich homogeneous phase, water droplets spring out in a successive manner from the focus of the laser, move away, and disappear in the surroundings, forming a flower-like pattern. The mechanism of this dynamic phase separation is discussed under the framework of the mean field theory. © 2003 American Institute of Physics.
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64.75.-g Phase equilibria
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

First-principle study on GaN epitaxy on lattice-matched ZrB2 substrates

J.-I. Iwata, K. Shiraishi, and A. Oshiyama

Appl. Phys. Lett. 83, 2560 (2003); http://dx.doi.org/10.1063/1.1613353 (3 pages) | Cited 6 times

Online Publication Date: 23 September 2003

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We theoretically investigate GaN epitaxy on ZrB2 substrates by clarifying the atomic and electronic structures of GaN/ZrB2 interfaces by first-principle calculations. Both the GaN epitaxial layer and the ZrB2 substrate almost maintain the bulk structures when the epitaxial growth begins with the formation of N–Zr bonds. On the other hand, a remarkable zigzag structural change, which seems to deteriorate the lattice-matched nature of ZrB2 substrates, is found in the interfacial B plane when B–N bonds are formed at the interface. These results indicate that suppression of the B–N bond formation is a key point for the effective use of ZrB2 as a substrate of GaN. We also estimate the Schottky barrier heights of these interfaces. The calculated p-type Schottky barrier height of the interface which contains three N–Zr bonds is small enough to form ohmic contacts. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
61.50.Lt Crystal binding; cohesive energy
68.35.Ct Interface structure and roughness
71.15.-m Methods of electronic structure calculations
68.43.Bc Ab initio calculations of adsorbate structure and reactions
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
81.05.Ea III-V semiconductors

Nanorheological approach for characterization of electroluminescent polymer thin films

Tomoko Gray, Cynthia Buenviaje, René M. Overney, Samson A. Jenekhe, Lixin Zheng, and Alex K. Y. Jen

Appl. Phys. Lett. 83, 2563 (2003); http://dx.doi.org/10.1063/1.1613045 (3 pages) | Cited 9 times

Online Publication Date: 23 September 2003

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Shear-modulated scanning force microscopy (SM-SFM) is introduced as a nanorheological characterization method for the determination of optoelectronic properties of semiconducting polymer thin films (<100 nm). In this letter, the photoluminescence quantum efficiency of poly(p-phenylenevinylene) (PPV) was directly correlated to the glass transition property by SM-SFM. Conformational changes and chain packing were discussed as a function of the conversion temperature of the soluble PPV precursor. Compared to the bulk, very low glass transition temperature values in the range of 65 to 85 °C were found, which imply an increased molecular mobility in thin films of conjugated polymers. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
83.85.Cg Rheological measurements—rheometry
68.37.Ps Atomic force microscopy (AFM)
42.70.Jk Polymers and organics
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
78.55.Kz Solid organic materials

High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition

J. S. King, C. W. Neff, C. J. Summers, W. Park, S. Blomquist, E. Forsythe, and D. Morton

Appl. Phys. Lett. 83, 2566 (2003); http://dx.doi.org/10.1063/1.1609240 (3 pages) | Cited 42 times

Online Publication Date: 23 September 2003

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The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnS:Mn show that filling fractions >95% can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photonic crystal structures and optical microcavities. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
68.55.-a Thin film structure and morphology
78.55.Et II-VI semiconductors

Stress relaxation in mismatched layers due to threading dislocation inclination

A. E. Romanov and J. S. Speck

Appl. Phys. Lett. 83, 2569 (2003); http://dx.doi.org/10.1063/1.1613360 (3 pages) | Cited 40 times

Online Publication Date: 23 September 2003

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A recently observed mechanism of elastic stress relaxation in mismatched layers is discussed. The relaxation is achieved by the inclination of pure edge threading dislocation lines with respect to the layer surface normal. The relaxation is not assisted by dislocation glide but rather is caused by the “effective climb” of edge dislocations. The effective dislocation climb may result from the film growth and it is not necessarily related to bulk diffusion processes. The contribution of the dislocation inclination to strain relaxation has been formulated and the energy release due to the dislocation inclination in mismatched stressed layers has been determined. This mechanism explains recently observed relaxation of compressive stresses in the (0001) growth of AlxGa1−xN layers. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Lk Linear defects: dislocations, disclinations
61.72.Bb Theories and models of crystal defects

Identification of Te alloys with suitable phase change characteristics

Ralf Detemple, Daniel Wamwangi, Matthias Wuttig, and Gustav Bihlmayer

Appl. Phys. Lett. 83, 2572 (2003); http://dx.doi.org/10.1063/1.1608482 (3 pages) | Cited 28 times

Online Publication Date: 23 September 2003

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At present, the discovery and development of phase change materials is mainly based upon empirical strategies and trial and error approaches. Here, we present a structural criterion that needs to be met to enable the mandatory fast recrystallization with sufficient optical contrast that characterizes suitable phase change materials. Comparing the behavior of AgInTe2 and AgSbTe2 films it is demonstrated that only the AgSbTe2 films, which show a cubic coordination, have sufficient density contrast, and hence, also optical contrast to allow phase change recording. © 2003 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
64.70.K- Solid-solid transitions

Metallic glass ingots based on yttrium

Faqiang Guo, S. Joseph Poon, and Gary J. Shiflet

Appl. Phys. Lett. 83, 2575 (2003); http://dx.doi.org/10.1063/1.1614420 (3 pages) | Cited 92 times

Online Publication Date: 23 September 2003

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We report a family of yttrium metallic alloys that are able to form glassy ingots directly from the liquid, as well as forming bulk-sized amorphous rods with diameters over 2 cm by water cooling of the alloy melt sealed in quartz tubes. It is apparent that, in addition to the strong chemical interaction among the components, the simultaneous occurrence of well-distributed atom sizes and a strongly depressed liquidus temperature in multicomponent metallic alloys is responsible for the formation of glassy ingots. © 2003 American Institute of Physics.
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61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys

Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

Yong-Hoon Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park

Appl. Phys. Lett. 83, 2578 (2003); http://dx.doi.org/10.1063/1.1613043 (3 pages) | Cited 26 times

Online Publication Date: 23 September 2003

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Influence of the size of indium clusters on optical properties of green-light-emitting InGaN quantum wells (QWs) was investigated by photoluminescence (PL), cathodoluminescence, PL excitation, and time-resolved PL techniques. Low luminescence efficiency was observed for green-light-emitting InGaN QWs with micron-sized indium clusters, in contrast to the case of InGaN QWs with submicron-sized small indium segregation. Both the thermal activation energy and the carrier lifetime dramatically decreased, while a large Stokes-like shift between absorption edge and PL peak energy was still observed for the InGaN QWs with micron-sized indium clusters. These facts indicate that the effective potential barrier between radiative and nonradiative channels (thus effective carrier localization) rapidly decreases due to the formation of micron-sized large indium clusters possessing a number of nonradiative centers, leading to significant luminescence degradation. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
78.47.-p Spectroscopy of solid state dynamics

Role of yttrium in glass formation of Fe-based bulk metallic glasses

Z. P. Lu, C. T. Liu, and W. D. Porter

Appl. Phys. Lett. 83, 2581 (2003); http://dx.doi.org/10.1063/1.1614833 (3 pages) | Cited 91 times

Online Publication Date: 23 September 2003

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In this study, we discovered that a small addition of Y is very effective in improving glass-forming ability of Fe-based alloys. As-cast bulk amorphous alloys containing 2 at. % Y showed large thermal stability, with glass transition temperatures above 900 K and supercooled liquid regions above 55 K, and high strength, with Vickers hardnesses larger than HV 1200. The beneficial effect of Y on glass formation is twofold: (1) Y adjusted the compositions closer to the eutectic and thus lowered their liquidus temperatures, and (2) Y improved the manufacturability of these alloys by scavenging the oxygen impurity from it via the formation of innocuous yttrium oxides. © 2003 American Institute of Physics.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
62.20.Qp Friction, tribology, and hardness

Properties of Bulk AlN grown by thermodecomposition of AlCl3⋅NH3

J. A. Freitas, G. C. B. Braga, E. Silveira, J. G. Tischler, and M. Fatemi

Appl. Phys. Lett. 83, 2584 (2003); http://dx.doi.org/10.1063/1.1614418 (3 pages) | Cited 14 times

Online Publication Date: 23 September 2003

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Self-nucleated bulk AlN crystals were grown by thermodecomposition of AlCl3⋅NH3 vaporized in the low-temperature zone of a two-zone furnace. X-ray diffraction of the AlN crystals show single lines with a small linewidth indicating high single-crystalline quality. Polarized Raman scattering experiments of these samples confirm the x-ray results based on the detection of a small linewidth for all allowed optical phonons. Low-temperature cathodoluminescence spectra show very sharp emission bands close to the optical band gap, which have been assigned to free-excitons A and B, and exciton-bound to shallow neutral impurity. The latter has a full width at half maximum smaller than 1.0 meV. © 2003 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.10.Bk Growth from vapor
78.60.Hk Cathodoluminescence, ionoluminescence
78.30.Fs III-V and II-VI semiconductors
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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