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13 Oct 2003

Volume 83, Issue 15, pp. 2991-3216

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3159 (2003); http://dx.doi.org/10.1063/1.1617378 (3 pages)

Zheng Wei Pan, Sheng Dai, David B. Beach, and Douglas H. Lowndes
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Red, green, and blue simultaneous generation in aperiodically poled Zn-diffused LiNbO3:Er3+/Yb3+ nonlinear channel waveguides

E. Cantelar, G. A. Torchia, J. A. Sanz-García, P. L. Pernas, G. Lifante, and F. Cussó

Appl. Phys. Lett. 83, 2991 (2003); http://dx.doi.org/10.1063/1.1617367 (3 pages) | Cited 42 times

Online Publication Date: 7 October 2003

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In this work, continuous-wave broadly tunable simultaneous generation of red (650–690 nm), green (520–575 nm), and blue (425–495 nm) light in aperiodically poled Zn-diffused LiNbO3:Er3+/Yb3+ channel waveguides is reported after Ti:sapphire excitation in the 850–990 nm range. The red and green emissions arise from energy transfer and upconversion mechanisms between Yb3+ and Er3+ ions, while the blue light with a maximum efficiency of 0.04% W−1 cm−1 is produced by quasi-phase matching processes. © 2003 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

High-resolution Fourier transform x-ray spectroscopy

Kenji Tamasaku, Tetsuya Ishikawa, and Makina Yabashi

Appl. Phys. Lett. 83, 2994 (2003); http://dx.doi.org/10.1063/1.1618023 (3 pages) | Cited 2 times

Online Publication Date: 7 October 2003

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Fourier transform spectroscopy was extended to the x-ray region using an intensity correlation technique and a separate crystal design of an x-ray Michelson interferometer capable of a large path difference. A demonstration was presented measuring the bandwidth of Si 0 6 14 back diffraction as narrow as 12.8 attometers at a wavelength of 71.3 pm. Insensitivity of the resolution to the crystal perfection would open up ultrahigh-resolution spectroscopy beyond 10−9. © 2003 American Institute of Physics.
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07.85.Nc X-ray and γ-ray spectrometers
29.30.Kv X- and γ-ray spectroscopy

Active photonic crystals based on surface acoustic waves

M. M. de Lima, R. Hey, and P. V. Santos

Appl. Phys. Lett. 83, 2997 (2003); http://dx.doi.org/10.1063/1.1617368 (3 pages) | Cited 21 times

Online Publication Date: 7 October 2003

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An active photonic crystal (PC) based on the modulation of a one-dimensional cavity resonator by electrically-generated surface acoustic waves is described. The high nonthermal population of surface modes combined with the enhanced Brillouin scattering in the cavity increases the intensity of the scattered light to values comparable to the excitation intensity. This process is employed to switch and modulate light beams in PCs. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
68.35.Iv Acoustical properties
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Efficient generation of subpicosecond terahertz radiation by phase-matched optical rectification using ultrashort laser pulses with tilted pulse fronts

Andrei G. Stepanov, János Hebling, and Jürgen Kuhl

Appl. Phys. Lett. 83, 3000 (2003); http://dx.doi.org/10.1063/1.1617371 (3 pages) | Cited 36 times

Online Publication Date: 7 October 2003

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We report on the generation of subpicosecond terahertz (THz) electromagnetic radiation in a nonlinear crystal by ultrashort laser pulses with a tilted pulse front. Free-space THz pulses with an energy of 98 pJ and a repetition rate of 200 kHz have been obtained by optical rectification using 2.3 μJ near-infrared laser pulses in a LiNbO3 crystal cooled down to 77 K. The emitted THz beam has a divergence smaller than 40 mrad, which is close to the diffraction limit. Spectral analysis of the generated THz beam with a Michelson interferometer reveals an approximately 1.5 THz broad asymmetric peak centered at 2 THz and a pulse duration of less than 500 fs. © 2003 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.70.Mp Nonlinear optical crystals

Highly sensitive transverse load sensing with reversible sampled fiber Bragg gratings

Xuewen Shu, Karen Chisholm, Ian Felmeri, Kate Sugden, Andrew Gillooly, Lin Zhang, and Ian Bennion

Appl. Phys. Lett. 83, 3003 (2003); http://dx.doi.org/10.1063/1.1618367 (3 pages) | Cited 10 times

Online Publication Date: 7 October 2003

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We present the implementation of optical load sensors utilizing mechanically induced reversible sampled fiber Bragg gratings (SFBGs). The load is measured by the reflectivity of the first-order Fourier component of the induced SFBGs. The theoretical and experimental characterization indicates that such SFBGs can be tailored to realize load sensors with high sensitivity of near-linear response and free of influence from environmental and system noises. © 2003 American Institute of Physics.
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42.81.Pa Sensors, gyros
42.79.Dj Gratings

Surface-plasmon-enhanced light scattering from microscopic spheres

M. J. Jory, P. S. Cann, J. R. Sambles, and E. A. Perkins

Appl. Phys. Lett. 83, 3006 (2003); http://dx.doi.org/10.1063/1.1613798 (3 pages) | Cited 7 times

Online Publication Date: 7 October 2003

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The enhanced light scattering from microscopic latex spheres placed in the optical field associated with a surface-plasmon resonance is explored. Spheres of 200 nm diameter are placed on an optically thin gold film that supports the surface-plasmon and the scattered intensity is then measured as a function of scattering angle. This is compared to the scattering profiles obtained from spheres placed on a bare glass substrate. In both cases, the experimental data are compared to theory. This system is of interest in the field of optical biosensing. © 2003 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Terahertz imaging with nanometer resolution

Hou-Tong Chen, Roland Kersting, and Gyu Cheon Cho

Appl. Phys. Lett. 83, 3009 (2003); http://dx.doi.org/10.1063/1.1616668 (3 pages) | Cited 92 times

Online Publication Date: 7 October 2003

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We report on the application of scanning near-field optical microscopy for terahertz imaging. We demonstrate a spatial resolution of 150 nm for 2.0 THz pulses. Our experiments show the feasibility of submicron THz microscopy for imaging of biologic tissues on the cell level or for the investigation of individual submicron semiconductor devices. © 2003 American Institute of Physics.
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87.64.mt Near-field scanning

Two-photon optical absorption in PbO-SiO2 glasses

K. Tanaka, N. Yamada, and M. Oto

Appl. Phys. Lett. 83, 3012 (2003); http://dx.doi.org/10.1063/1.1618929 (3 pages) | Cited 4 times

Online Publication Date: 7 October 2003

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One- and two-photon absorption spectra in PbO-SiO2 glasses have been studied comparatively as a function of the PbO content. The two spectra show different composition dependence, which can be accounted for by taking related electronic wave functions and the densities-of-states into account. This interpretation can be extended to understand high optical nonlinearity in heavy-metal oxide glasses. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.23.Cq Amorphous semiconductors, metallic glasses, glasses

Electrically tunable mid-infrared electroluminescence from graded cascade structures

Yu. B. Vasilyev, V. A. Solov’ev, B. Ya. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop’ev, N. Ulbrich, G. Abstreiter, M.-C. Amann, S. Schmult, and W. Wegscheider

Appl. Phys. Lett. 83, 3015 (2003); http://dx.doi.org/10.1063/1.1618947 (3 pages)

Online Publication Date: 7 October 2003

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Mid-infrared electroluminescence (EL) is observed from multiperiod bilayer type-II InAs/AlGaSb structures with the effective interlayer separation controlled by bias. The emission with powers in the microwatt range is characterized by a linear dependence of the photon energy on the bias. By measuring the temperature and current dependence of EL, we find evidence that the EL emission results from recombination of holes in AlGaSb quantum wells (QWs) with electrons occupying two different quantum states in InAs QWs. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.67.De Quantum wells

Efficient wavelength-selective optical waveguiding in a silica layer containing Si nanocrystals

Leonid Khriachtchev, Markku Räsänen, and Sergei Novikov

Appl. Phys. Lett. 83, 3018 (2003); http://dx.doi.org/10.1063/1.1618928 (3 pages) | Cited 30 times

Online Publication Date: 7 October 2003

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The optical properties of a silica layer containing Si nanocrystals deposited onto fused quartz are studied with emphasis on optical waveguiding (WG) of the photoluminescence (PL). The WG layer was estimated to be 4.3 μm thick with a refractive index of 1.67. We observed efficient (long-distance) propagation of the PL light in the layer, the losses being below 1 cm−1 at 1000 nm. Efficient narrowing of the PL spectrum (down to 8 meV) was detected demonstrating spectral filtering by the waveguide. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Ap Elemental semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Role of surface plasmons in the optical interaction in metallic gratings with narrow slits

Zhijun Sun, Yun Suk Jung, and Hong Koo Kim

Appl. Phys. Lett. 83, 3021 (2003); http://dx.doi.org/10.1063/1.1618021 (3 pages) | Cited 52 times

Online Publication Date: 7 October 2003

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We report an experimental study of the transmission of light through narrow slits in metallic gratings (Ag layer thickness of 100–400 nm, grating period of 370 or 780 nm, and slit width of 30–100 nm). Peak transmission of ∼ 60% is observed for TM polarization at a wavelength redshifted from the point of surface plasmon (SP) resonance at the metal/substrate interface. At the transmission minima, the angular dependence of reflection shows a sharp peak with minimum loss of optical power. Two types of surface plasmon excitation are found responsible for the observed transmission dips: (1) the SP resonance along the planes that comprise either the metal/air or metal/substrate interfaces and (2) the SP resonance localized along the surface that encloses each metal island separated by slits. © 2003 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings

High-resolution near-field spectroscopy of InAs single quantum dots at 70 K

Young-Jun Yu, Wonho Jhe, and Yasuhiko Arakawa

Appl. Phys. Lett. 83, 3024 (2003); http://dx.doi.org/10.1063/1.1618949 (3 pages) | Cited 6 times

Online Publication Date: 7 October 2003

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We have performed high-resolution near-field laser spectroscopy and microscopy of single InAs/GaAs quantum dots near liquid nitrogen temperature. By simultaneous use of 100-nm shadow mask apertures and a 30-nm-aperture fiber probe, we have achieved photoluminescence (PL) resolution comparable to that available at liquid helium temperature. In particular, we have obtained a PL linewidth of 0.6 meV for single exciton states, and observed biexciton states with quadratic power dependence. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
73.21.La Quantum dots
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Planar polymer light-emitting electrochemical cells with extremely large interelectrode spacing

Jun Gao and Justin Dane

Appl. Phys. Lett. 83, 3027 (2003); http://dx.doi.org/10.1063/1.1618948 (3 pages) | Cited 54 times

Online Publication Date: 7 October 2003

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Planar polymer light-emitting electrochemical cells have been demonstrated with interelectrode spacings nearly 100 times larger than previously reported. Striking details of the p–i–n junction structure have been imaged directly using a digital camera. With an interelectrode spacing of 1.5 mm, a well-defined emission zone over 70 μm wide is observed near the cathode. Imaging under UV excitation reveals that the p-doped region migrates towards the cathode during operation, causing the emission zone at its frontier to shift. The width of the p-doped region is found to have a large variance, giving rise to an irregularly shaped emission zone. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Morphology of femtosecond-laser-ablated borosilicate glass surfaces

Adela Ben-Yakar, Robert L. Byer, Anthony Harkin, Jacqueline Ashmore, Howard A. Stone, Mengyan Shen, and Eric Mazur

Appl. Phys. Lett. 83, 3030 (2003); http://dx.doi.org/10.1063/1.1619560 (3 pages) | Cited 25 times

Online Publication Date: 7 October 2003

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We study the morphology of borosilicate glass surface machined by femtosecond laser pulses. Our observations show that a thin rim is formed around ablated craters after a single laser pulse. When multiple laser pulses are overlapped, the crater rims also overlap and produce a surface roughness. The rim appears to be a resolidified splash from a molten layer generated during the ablation process. We estimate that this molten layer is a few micrometers thick and exists for a few microseconds. During this melt lifetime, forces acting on the molten layer move it from the center to the edge of the crater. © 2003 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photonic-crystal 180° power splitter based on coupled-cavity waveguides

Alejandro Martinez, Francisco Cuesta, Amadeu Griol, David Mira, Jaime Garcia, Pablo Sanchis, Roberto Llorente, and Javier Marti

Appl. Phys. Lett. 83, 3033 (2003); http://dx.doi.org/10.1063/1.1621070 (3 pages) | Cited 11 times

Online Publication Date: 7 October 2003

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We propose a structure that allows the splitting of electromagnetic waves with a phase shift of 180° between output signals based on photonic crystals. The structure consists of two parallel coupled-cavity waveguides placed in proximity. The performance of the splitting structure is theoretically discussed, evaluated by means of finite-difference time-domain method simulations and experimentally demonstrated at microwave frequencies. As both output paths have the same physical length, the two output signals are synchronized, which is very attractive for splitting high-speed optical signals in photonic-crystal-based integrated circuits. © 2003 American Institute of Physics.
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42.82.-m Integrated optics
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals

Guido Mertens, Thorsten Röder, Heinrich Matthias, Heinrich Marsmann, Heinz-Siegfried R. Kitzerow, Stefan L. Schweizer, Cecile Jamois, Ralf B. Wehrspohn, and Mary Neubert

Appl. Phys. Lett. 83, 3036 (2003); http://dx.doi.org/10.1063/1.1614000 (3 pages) | Cited 32 times

Online Publication Date: 7 October 2003

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Variations of the refractive index can be utilized in order to shift the stop band in periodic structures, such as photonic crystals. We report on investigations about three-dimensional macroporous silicon structures that are filled with a liquid crystal. Fourier transform infrared measurements indicate that a shift of the photonic band edge can be induced by changing the temperature. The director field in macropores within the silicon structure is investigated by 2H-NMR spectroscopy and compared to director field simulations. The latter method indicates a preferred parallel orientation of the director in the nematic state. Based on this finding, we analyze the optical properties. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Df Liquid crystals
78.20.-e Optical properties of bulk materials and thin films
76.60.-k Nuclear magnetic resonance and relaxation
81.05.Rm Porous materials; granular materials
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Proton beams generated with high-intensity lasers: Applications to medical isotope production

S. Fritzler, V. Malka, G. Grillon, J. P. Rousseau, F. Burgy, E. Lefebvre, E. d’Humières, P. McKenna, and K. W. D. Ledingham

Appl. Phys. Lett. 83, 3039 (2003); http://dx.doi.org/10.1063/1.1616661 (3 pages) | Cited 71 times

Online Publication Date: 7 October 2003

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Proton beams of up to 10 MeV have been obtained by the interaction of a 10 Hz “table-top” laser, focused to intensities of 6×1019 W/cm2, with 6-μm-thin foil targets. Such proton beams can be used to induce 11B(p,n)11C reactions, which could yield an integrated activity of 13.4 MBq (0.36 mCi) after 30 min laser irradiation. This can be extended to GBq levels using similar lasers with kilohertz repetition rates, making this positron-emission tomography isotope production scheme comparable to the one using conventional accelerators. © 2003 American Institute of Physics.
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87.57.uk Positron emission tomography (PET)
79.20.Ds Laser-beam impact phenomena
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Role of boron for defect evolution in hydrogen-implanted silicon

J. K. Lee, T. Höchbauer, R. D. Averitt, and M. Nastasi

Appl. Phys. Lett. 83, 3042 (2003); http://dx.doi.org/10.1063/1.1616979 (3 pages) | Cited 9 times

Online Publication Date: 7 October 2003

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The mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was more pronounced for nonactivated B. Infrared spectroscopy showed that the concentration of Si–H multivacancy defects was also decreased in the B+H coimplanted Si relative to H-only-implanted Si. These decreases in the damage and H-defect density suggest that the lower damage in the B+H coimplanted Si results from a reduction in H-trap density, which in turn enhances H diffusion and the kinetics of blistering. This reduction in lattice damage and H–Si-defect complexes is attributed to the formation of a kinetically active B–Si interstitial complex that is prevalent in nonactivated B-implanted Si. © 2003 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
66.30.J- Diffusion of impurities
78.30.Hv Other nonmetallic inorganics
61.72.uf Ge and Si

Enhancement of the recording stability of a photorefractive polymer composite by the introduction of a trapping layer

Won-Sun Kim, Jong-Woo Lee, and Jung-Ki Park

Appl. Phys. Lett. 83, 3045 (2003); http://dx.doi.org/10.1063/1.1606885 (3 pages) | Cited 4 times

Online Publication Date: 7 October 2003

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A photorefractive polymer composite containing a trapping layer which exhibits a significant enhancement in its photorefractivity is reported. The photorefractive polymer composite containing a trapping layer showed a grating life time as high as 600 s, while the grating life time was only 7 s in the photorefractive polymer composite without a trapping layer. The grating growth rate was found to be unaffected by the introduction of a trapping layer. The diffraction efficiency and gain coefficient also increased by the introduction of a trapping layer. The enhancement in the photorefractive properties is due to the increase in the space-charge field developed in the photorefractive polymer composite containing a trapping layer. © 2003 American Institute of Physics.
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42.70.Jk Polymers and organics
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Vb Optical storage systems, optical disks
42.79.Dj Gratings

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

Zhenqiang Xi, Deren Yang, Jin Xu, Yujie Ji, Duanlin Que, and H. J. Moeller

Appl. Phys. Lett. 83, 3048 (2003); http://dx.doi.org/10.1063/1.1617377 (3 pages) | Cited 14 times

Online Publication Date: 7 October 2003

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Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon annealed at 1100 °C under air cooling was studied by means of scanning infrared microscopy (SIRM), optical microscopy (OM), and transmission electron microscopy (TEM). The SIRM images showed that, in the A-defect zone of the Cu-contaminated silicon wafers, the copper-precipitate colonies with larger size were observed, while in the D-defect zone almost no copper precipitates could be observed. However, the OM results revealed that the density of etching pits in the D-defect zone was higher than that in the A-defect zone, indicating that the copper precipitates with smaller size and higher density formed in the D-defect zone. The TEM investigation showed that the size of copper precipitate colonies in the A-defect zone was about 300 nm, while that in the D-defect zone was about 50 nm. It is considered that as-grown vacancies in the D-defect zone enhanced the nucleation of copper precipitates but hindered their growth, whereas the role of as-grown interstitial silicon on copper precipitation was inverse. © 2003 American Institute of Physics.
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64.75.-g Phase equilibria
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
61.72.Yx Interaction between different crystal defects; gettering effect

Electronic structure of acceptor-donor complexes in silicon

E. Atoro, Y. Ohama, and Y. Hayafuji

Appl. Phys. Lett. 83, 3051 (2003); http://dx.doi.org/10.1063/1.1618378 (3 pages) | Cited 1 time

Online Publication Date: 7 October 2003

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The electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In2D (D = phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two indium In acceptor elements and a centered donor element D from the group V elements. Calculations are performed under the assumption that the three atoms are arranged in the nearest neighbor substitutional trimer configuration. Results indicate that the trimer complexes act as shallower acceptors having smaller ionization activation energies than In acceptor. The potential of In2D as an acceptor in Si is then discussed and In2D is proposed as a promising acceptor for the formation of channels and source/drains in ultralarge scaled integration. © 2003 American Institute of Physics.
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71.55.Cn Elemental semiconductors
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

How to estimate the Green’s function of a heterogeneous medium between two passive sensors? Application to acoustic waves

Arnaud Derode, Eric Larose, Michel Campillo, and Mathias Fink

Appl. Phys. Lett. 83, 3054 (2003); http://dx.doi.org/10.1063/1.1617373 (3 pages) | Cited 104 times

Online Publication Date: 7 October 2003

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The exact Green’s function of a heterogeneous medium can be retrieved from the crosscorrelation of the fields received by two passive sensors. We propose a physical interpretation based on time-reversal symmetry. We address the issue of causality and show the role of multiple scattering for the reconstruction of the Green’s function. Ultrasonic experimental results are presented to illustrate the argument. Applications to geophysics and ocean acoustics are discussed. © 2003 American Institute of Physics.
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43.25.Cb Macrosonic propagation, finite amplitude sound; shock waves
43.30.-k Underwater sound
92.10.Vz Underwater sound
93.85.-q Instruments and techniques for geophysical research: Exploration geophysics

Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

T. Yoshitake, M. Yatabe, M. Itakura, N. Kuwano, Y. Tomokiyo, and K. Nagayama

Appl. Phys. Lett. 83, 3057 (2003); http://dx.doi.org/10.1063/1.1617374 (3 pages) | Cited 14 times

Online Publication Date: 7 October 2003

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Amorphous iron silicide was reported to be semiconducting as well as β-FeSi2, and it has received considerable attention from both the physical and engineering points of view. However, there have been few studies and its basic properties are still unknown. We could grow the semiconducting nanocrystalline iron disilicide thin films by pulsed-laser deposition using an FeSi2 target. They consist of crystallites with diameters ranging from 3 to 5 nm. The carrier density and the mobility at 300 K were 1.5×1019 cm−3 and 35 cm/V s, respectively. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.61.Le Other inorganic semiconductors
81.15.Fg Pulsed laser ablation deposition
73.50.Dn Low-field transport and mobility; piezoresistance

Room-temperature epitaxial growth of GaN on conductive substrates

J. Ohta, H. Fujioka, and M. Oshima

Appl. Phys. Lett. 83, 3060 (2003); http://dx.doi.org/10.1063/1.1617376 (3 pages) | Cited 30 times

Online Publication Date: 7 October 2003

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We have grown GaN films on (Mn,Zn)Fe2O4 (111) substrates by pulsed-laser deposition at room temperature and investigated their structural properties using reflection high-energy electron diffraction, atomic force microscopy, grazing-incidence x-ray reflectivity, and grazing-incidence x-ray diffraction (GIXD). We have found that GaN (0001) grows epitaxially even at room temperature. The room-temperature growth of GaN starts with the two-dimensional mode followed by the three-dimensional mode, which indicates that the precursors of GaN have large energy enough to migrate on the surface. GIXD measurements showed that the in-plane epitaxial relationship is GaN [11-20] // (Mn,Zn)Fe2O4 [01-1] and approximately 90% of the lattice mismatch is released at the interface. These results indicate that the present technique solves one of the two major problems with epitaxial growth of GaN (mismatch in the thermal expansion coefficients) and alleviates the other problem (mismatch in the lattice constants). © 2003 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Fg Pulsed laser ablation deposition
68.37.Ps Atomic force microscopy (AFM)
68.55.A- Nucleation and growth

Study of negative-bias temperature-instability-induced defects using first-principle approach

Jia Mei Soon, Kian Ping Loh, Shyue Seng Tan, T. P. Chen, W. Y. Teo, and L. Chan

Appl. Phys. Lett. 83, 3063 (2003); http://dx.doi.org/10.1063/1.1614415 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2003

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In this letter, we report the study of negative-bias temperature-instability (NBTI)-induced defect using first-principle calculations. From our calculations, we found that the NBTI effect leads to an overall decrease in frontier molecular orbital energy gap at the interface. We studied the interface structure at an atomistic level and proposed an explanation for this phenomenon using molecular orbital theory and band theory. In addition, weakening of bond strength of Si–O at the defect site is observed. It is found that upon formation of a defect, an energy state is created inside the band gap of SiO2. These results improve our understanding of the consequences associated with the NBTI effect, and the self-propagating nature of the NBTI effect. © 2003 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.15.-m Methods of electronic structure calculations
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