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13 Oct 2003

Volume 83, Issue 15, pp. 2991-3216

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3159 (2003); http://dx.doi.org/10.1063/1.1617378 (3 pages)

Zheng Wei Pan, Sheng Dai, David B. Beach, and Douglas H. Lowndes
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Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films

Susanne Stemmer, Youli Li, Brendan Foran, Patrick S. Lysaght, Stephen K. Streiffer, Paul Fuoss, and Soenke Seifert

Appl. Phys. Lett. 83, 3141 (2003); http://dx.doi.org/10.1063/1.1617369 (3 pages) | Cited 44 times

Online Publication Date: 7 October 2003

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Grazing-incidence small-angle x-ray scattering (GISAXS) and high-resolution transmission electron microscopy (HRTEM) were used to investigate phase separation in hafnium silicate films after rapid thermal annealing between 700 and 1000 °C. 4-nm-thick Hf–silicate films with 80 and 40 mol % HfO2, respectively, were prepared by metalorganic vapor deposition. Films of the two compositions showed distinctly different phase-separated microstructures, consistent with two limiting cases of microstructural evolution: nucleation/growth and spinodal decomposition. Films with 40 mol % HfO2 phase separated in the amorphous by spinodal decomposition and exhibited a characteristic wavelength in the plane of the film. Decomposition with a wavelength of ∼3 nm could be detected at 800 °C. At 1000 °C the films rapidly demixed with a wavelength of 5 nm. In contrast, films with 80 mol % HfO2 phase separated by nucleation and growth of crystallites, and showed a more random microstructure. The factors determining specific film morphologies and phase separation kinetics are discussed. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
78.70.Ck X-ray scattering
68.55.Nq Composition and phase identification

Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors for microwave/millimeterwave applications

A. Vorobiev, P. Rundqvist, K. Khamchane, and S. Gevorgian

Appl. Phys. Lett. 83, 3144 (2003); http://dx.doi.org/10.1063/1.1619213 (3 pages) | Cited 74 times

Online Publication Date: 7 October 2003

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Parallel-plate Ba0.25Sr0.75TiO3 (BST) varactors with a record high Q factor are fabricated on Si substrate. At 45 GHz the Q factor is about 40, and the tuneability at 25 V is more than 40% in the measured frequency range 0.045–45 GHz. The improvement in the Q factor is achieved by using a thick bottom electrode consisting of Pt (50 nm)/Au (0.5 μm) allowing us to reduce the microwave losses associated with metal layers. The BST films exhibit relatively high permittivity (150) at zero bias and high resistivity (1010 Ω cm) at fields up to 700 kV/cm. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.40.-x Radiowave and microwave (including millimeter wave) technology

Plasma etching and hydrogen blocking characteristics of PtOx thin films in ferroelectric capacitor fabrication

Chun-Kai Huang and Tai-Bor Wu

Appl. Phys. Lett. 83, 3147 (2003); http://dx.doi.org/10.1063/1.1610250 (3 pages) | Cited 8 times

Online Publication Date: 7 October 2003

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The use of a PtOx thin film as a transient template of Pt electrode in the fabrication of ferroelectric capacitor for memory devices was investigated. Fence-free patterning with a significantly high etch rate, selectivity, and sidewall slope was obtained from dry etching the photoresist-masked PtOx films using Ar/Cl2/O2 helicon wave plasma. The x-ray photoelectron spectroscopy analysis indicates that the redeposition of PtClx etch product can be repressed due to an in situ sidewall passivation with a PtO2 layer resulting from a further oxidation of the etched surface of PtOx film by the introduction of oxygen in the etching gas. Due to the chemical instability of oxygen in the PtOx film, a superior hydrogen blocking effect was also achieved in hydrogen plasma annealing of the Pb(Zr0.5Ti0.5)O3 (PZT) ferroelectric capacitors with the use of PtOx as the top electrode, and the hydrogen degradation of the PZT capacitor was repressed. © 2003 American Institute of Physics.
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52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
81.65.Rv Passivation
85.50.Gk Non-volatile ferroelectric memories
84.32.Tt Capacitors
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

High Curie temperature piezocrystals in the BiScO3-PbTiO3 perovskite system

Shujun Zhang, Clive A. Randall, and Thomas R. Shrout

Appl. Phys. Lett. 83, 3150 (2003); http://dx.doi.org/10.1063/1.1619207 (3 pages) | Cited 58 times

Online Publication Date: 7 October 2003

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Perovskite ferroelectric single crystals in the (1−x)BiScO3-xPbTiO3 (BSPT) system were grown using a flux method. The Curie temperature of rhombohedral BSPT(43/57) crystals was found to be about 404 °C, with a rhombohedral–tetragonal phase transition temperature (Tr−t) around 350 °C. The coercive field (Ec) was found to be 13.7 kV/cm for 〈001〉-oriented crystals, while the coupling factor k33 was determined to be ∼90% at room temperature and was nearly temperature independent until 330 °C. High piezoelectric properties together with a high Curie temperature and coercive field make rhombohedral BSPT crystals promising candidates for the next generation of high-performance, high-temperature actuators and transducers. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.B- Phase transitions and Curie point
64.70.K- Solid-solid transitions

Field-induced electric switching in sol–gel-derived SiO2 films

J. Hu, S. Ward, and Q. Wang

Appl. Phys. Lett. 83, 3153 (2003); http://dx.doi.org/10.1063/1.1618950 (3 pages) | Cited 2 times

Online Publication Date: 7 October 2003

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The switching dynamics of sol–gel-derived SiO2 films is investigated using voltage pulses over durations from 300 ns to 1 s and amplitudes from 1 to 20 V. The SiO2 film was fabricated using a spin-coating technique and annealed at 100 °C. The shortest switching transit time is found to be on the order of 10 ns. A delay time ranging from 100 ns to 500 ms is usually observed prior to switching, which changes exponentially with the electric field at switching, and also depends strongly on the area of the device. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing

Han-Chang Pan, Chen-Chia Chou, and Hsien-Lung Tsai

Appl. Phys. Lett. 83, 3156 (2003); http://dx.doi.org/10.1063/1.1619214 (3 pages) | Cited 23 times

Online Publication Date: 7 October 2003

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Fabrication of well-crystallized sol-gel derived (La0.5Sr0.5)MnO3 (LSMO) buffer electrode layers and ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films using a continuous wave CO2 laser annealing technique at a relatively low temperature was studied on a Pt/Ti/SiO2/Si substrate. Resistivity, carrier concentration and Hall mobility of laser-annealed conducting oxide LSMO films were optimized by changing the radiation fluence and the substrate temperature. The minimum resistivity of 1.27×10−4 Ω cm was obtained for LSMO/Pt(Si) films prepared by laser irradiating at a fluence of 533 W/cm2 with a simultaneous substrate heating at a temperature of 300 °C. The laser-annealed PZT films coated on LSMO/Pt(Si) substrate shows enhancement in remanent polarization from 10.1 to 17.3 μC/cm2 as the PZT irradiated with a laser fluence of 433–483 W/cm2. The PZT(483 W/cm2)/LSMO(533 W/cm2)/Pt(Si) films showed a good fatigue resistance after 1×1010 switching cycles with a bipolar electric field of 300 kV/cm, implying the feasibility of fabricating reliable ferroelectric-oxide electrode heterostructures using CO2 laser annealing at temperatures lower than 400 °C. © 2003 American Institute of Physics.
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61.82.Ms Insulators
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
72.20.Ee Mobility edges; hopping transport
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
77.22.Ej Polarization and depolarization
73.61.Ng Insulators
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