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13 Oct 2003

Volume 83, Issue 15, pp. 2991-3216

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3159 (2003); http://dx.doi.org/10.1063/1.1617378 (3 pages)

Zheng Wei Pan, Sheng Dai, David B. Beach, and Douglas H. Lowndes
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ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

M. A. L. Nobre and S. Lanfredi

Appl. Phys. Lett. 83, 3102 (2003); http://dx.doi.org/10.1063/1.1618016 (3 pages)

Online Publication Date: 7 October 2003

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The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency σ(ω) follows the relation σ(ω) = Aωs. The values of the exponent s lie in the range 0.15 ⩽ s ⩽ 0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors

Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

W. T. Lim, I. K. Baek, J. W. Lee, E. S. Lee, M. H. Jeon, G. S. Cho, Y. W. Heo, D. P. Norton, and S. J. Pearton

Appl. Phys. Lett. 83, 3105 (2003); http://dx.doi.org/10.1063/1.1618373 (3 pages) | Cited 16 times

Online Publication Date: 7 October 2003

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The etch rate of bulk ZnO in Cl2/Ar high density plasmas was found to be thermally activated with an activation energy of ∼0.31 eV at <300 °C. The rate-limiting step appears to be the ion-assisted desorption of the ZnClX etch products. The threshold ion energy for etching ZnO at 150 °C in Cl2/Ar is ∼170 eV, obtained by fitting to a model of ion-enhanced sputtering by a collision-cascade process. The amount of residual chlorine on the ZnO surface decreases with increasing etch temperature, but there is a tendency for the surface to become Zn-rich and roughen at elevated temperatures (>200 °C). © 2003 American Institute of Physics.  
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81.65.Cf Surface cleaning, etching, patterning
81.05.Dz II-VI semiconductors
52.77.Bn Etching and cleaning
68.43.Mn Adsorption kinetics

High mobility organic transistors fabricated from single pentacene microcrystals grown on a polymer film

Guanzhong Wang, Yi Luo, and Peter H. Beton

Appl. Phys. Lett. 83, 3108 (2003); http://dx.doi.org/10.1063/1.1617375 (3 pages) | Cited 21 times

Online Publication Date: 7 October 2003

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Isolated multilayer, bilayer, and monolayer crystals of pentacene are grown on polymer thin films. Source and drain contacts are formed to individual crystallites and transistor operation, based on the formation of an inversion layer at the pentacene/polymer interface is demonstrated for multilayers, trilayers, and bilayers. Hole inversion layers are formed with mobilities up to 1.2 cm2/V s for multilayer crystals, while a reduced mobility is observed for trilayers and bilayers. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzmán, and E. Muñoz

Appl. Phys. Lett. 83, 3111 (2003); http://dx.doi.org/10.1063/1.1618931 (3 pages) | Cited 23 times

Online Publication Date: 7 October 2003

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Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-Å GaAs1−yNy (y ≈ 0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 °C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Reliable strain determination method for InGaAsN/GaAs quantum wells using a simple photoluminescence measurement

N. J. Kim, Y. D. Jang, D. Lee, K. H. Park, Weon G. Jeong, and J. W. Jang

Appl. Phys. Lett. 83, 3114 (2003); http://dx.doi.org/10.1063/1.1618371 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2003

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We present a reliable method for determining the strain in InGaAsN quantum wells. The method uses the fact that the splitting between heavy hole and light hole energy levels depends mostly on the strain. We also found that the strain was largely relaxed in an In0.34Ga0.66As/GaAs quantum well, but recovered when a small amount of nitrogen was added to the In0.34Ga0.66As layer. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors

Ultrabroadband terahertz radiation from low-temperature-grown GaAs photoconductive emitters

Y. C. Shen, P. C. Upadhya, E. H. Linfield, H. E. Beere, and A. G. Davies

Appl. Phys. Lett. 83, 3117 (2003); http://dx.doi.org/10.1063/1.1619223 (3 pages) | Cited 42 times

Online Publication Date: 7 October 2003

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Terahertz radiation was generated with a biased and asymmetrically excited low-temperature-grown GaAs photoconductive emitter, and characterized with a 20-μm-thick ZnTe crystal using free-space electro-optic sampling. Using a backward collection scheme, we obtained terahertz radiation with frequency components over 30 THz, the highest ever observed for photoconductive emitters. We present spectra over the whole frequency range between 0.3 and 20 THz, demonstrating the use of this source for ultrabroadband THz spectroscopy. © 2003 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects

Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

F. Gámiz, P. Cartujo-Cassinello, F. Jiménez-Molinos, J. E. Carceller, and P. Cartujo

Appl. Phys. Lett. 83, 3120 (2003); http://dx.doi.org/10.1063/1.1619217 (3 pages) | Cited 1 time

Online Publication Date: 7 October 2003

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We study the influence of the image and exchange-correlation effects in double-gate silicon-on-insulator (DGSOI) devices, in the calculation of both charge distribution and electron mobility. The image and exchange correlation potentials produce a greater confinement of the carriers and, according to the uncertainty principle, a greater phonon scattering rate, which produces a decrease in electron mobility. Moreover, the influence of image and exchange-correlation potentials on electron mobility, while almost negligible for bulk silicon inversion layers, becomes increasingly important as the silicon thickness decreases, due to the effect of volume inversion in DGSOI inversion layers. These effects must then be taken into account in order to achieve a correct evaluation of the charge distribution and of mobility in DGSOI inversion layers. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann

Appl. Phys. Lett. 83, 3123 (2003); http://dx.doi.org/10.1063/1.1618380 (3 pages) | Cited 2 times

Online Publication Date: 7 October 2003

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We investigated the influence of growth interruptions on the morphology of molecular-beam epitaxy grown GaSb/GaAs multiquantum-well structures by transmission electron microscopy (TEM). Profiles of the chemical composition of the GaSb layers were deduced from high-resolution TEM images with the lattice fringe analysis method. We found clear indications of segregation of Sb in GaAs-on-GaSb for a sample grown with growth interruption before and after the growth of the quantum wells. Its efficiency R = 0.78±0.03 was derived by fitting the measured composition profiles with the model of Muraki. Determination of the total amounts of deposited GaSb yields a higher amount of GaSb in a sample grown without interruption. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
68.37.Lp Transmission electron microscopy (TEM)
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