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13 Oct 2003

Volume 83, Issue 15, pp. 2991-3216

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3159 (2003); http://dx.doi.org/10.1063/1.1617378 (3 pages)

Zheng Wei Pan, Sheng Dai, David B. Beach, and Douglas H. Lowndes
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Erratum: “Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for ‘type inversion’ ” [Appl. Phys. Lett. 82, 2169 (2003)]

I. Pintilie, E. Fretwurst, G. Lindström, and J. Stahl

Appl. Phys. Lett. 83, 3216 (2003); http://dx.doi.org/10.1063/1.1619226 (1 page)

Online Publication Date: 7 October 2003

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Abstract Unavailable
Show PACS
61.80.Ed γ-ray effects
85.30.Kk Junction diodes
81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors
72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.22.Ej Polarization and depolarization
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
77.22.Jp Dielectric breakdown and space-charge effects
72.60.+g Mixed conductivity and conductivity transitions
99.10.Cd Errata
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