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13 Oct 2003

Volume 83, Issue 15, pp. 2991-3216

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3159 (2003); http://dx.doi.org/10.1063/1.1617378 (3 pages)

Zheng Wei Pan, Sheng Dai, David B. Beach, and Douglas H. Lowndes
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Nitrogen effects on lowering specific junction resistance and suppressing Mn diffusion in a magnetic tunnel junction

Heejae Shim, B. K. Cho, Jin-Tae Kim, J. W. Choi, and Y. Park

Appl. Phys. Lett. 83, 3126 (2003); http://dx.doi.org/10.1063/1.1618381 (3 pages) | Cited 1 time

Online Publication Date: 7 October 2003

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We investigated the annealing effects of a magnetic tunnel junction on the Fe bottom pinned layer, of which the top surface was exposed to nitrogen plasma for a few tens of seconds prior to the deposition of the Al layer. The nitrogen-treated junction shows a lower magnetoresistance (MR) ratio and specific junction resistance (RA) than the untreated normal junction. However, after annealing at 230 °C, the MR ratio of the nitrogen-treated junction recovers to optimal values of the normal junction, while the RA remains lower than that of the normal junction. Furthermore, the nitrogen-treated junction shows less reduction of MR ratio and RA value with annealing at 270 °C for 3 h than the normal junction. From x-ray photoelectron spectroscopy and auger electron spectroscopy depth profiles, it is found that the nitrogen, which was initially at an interface between Al and Fe, diffuses into both the Al and FeMn layers after annealing at 230 °C. It seems that the nitrogen plays an important role in reducing Mn diffusion, as well as in improving the junction properties. © 2003 American Institute of Physics.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.40.Cg Contact resistance, contact potential
75.50.Bb Fe and its alloys
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.S- Impurities in crystals
66.30.J- Diffusion of impurities

Co distribution in ferromagnetic rutile Co-doped TiO2 thin films grown by laser ablation on silicon substrates

Nguyen Hoa Hong, Joe Sakai, W. Prellier, and Awatef Hassini

Appl. Phys. Lett. 83, 3129 (2003); http://dx.doi.org/10.1063/1.1619227 (3 pages) | Cited 32 times

Online Publication Date: 7 October 2003

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Pure rutile Co-doped TiO2 films were fabricated by the pulsed-laser-deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the target, and films under various conditions all are ferromagnetic well above room temperature. Even though Rutherford backscattering spectroscopy measurements show that Co atoms mostly localize near the surface of the films and exist less in deeper levels, other experimental evidence shows that the ferromagnetism does not come from Co segregations, but from the Co-doped TiO2 matrix. Rutile Ti1−xCoxO2 thin films grown by a very simple technique on low-cost silicon substrates showing a Curie temperature (TC) above 400 K appear to be very attractive to applications. © 2003 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Fg Pulsed laser ablation deposition
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
61.72.S- Impurities in crystals
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order

Quantitative measurement of the ferromagnetic resonance signal by force detection

V. V. Naletov, V. Charbois, O. Klein, and C. Fermon

Appl. Phys. Lett. 83, 3132 (2003); http://dx.doi.org/10.1063/1.1614421 (3 pages) | Cited 9 times

Online Publication Date: 7 October 2003

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A magnetic resonance force microscope is used to measure ΔMz, the change of longitudinal magnetization associated with the resonant absorption of microwave power in a ferromagnetic crystal. It is demonstrated that quantitative measurements of ΔMz can be obtained by analyzing the dipolar force exerted between a disk sample and a cylindrical probe magnet aligned and magnetized along their axis. Finite size effects are found to be important when probing the resonance in a micron-sized sample. © 2003 American Institute of Physics.
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76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3

C. A. Cardoso, F. M. Araujo-Moreira, M. R. B. Andreeta, A. C. Hernandes, E. R. Leite, O. F. de Lima, A. W. Mombrú, and R. Faccio

Appl. Phys. Lett. 83, 3135 (2003); http://dx.doi.org/10.1063/1.1619566 (3 pages) | Cited 1 time

Online Publication Date: 7 October 2003

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We have grown high-quality single crystals of the colossal-magnetoresistance (CMR) material La0.7Ca0.3MnO3 by using the laser heated pedestal growth method. Samples were grown as fibers of different diameters, and with lengths of the order of centimeters. Their composition and structure were verified through x-ray diffraction, scanning electron microcopy with energy dispersive x-ray analysis and by Rietveld analysis. The quality of the crystalline fibers was confirmed by Laue and electron backscatter diffraction patterns. Rocking curves performed along the fiber axis revealed a half-height width of 0.073°. The CMR behavior was confirmed by electrical resistivity and magnetization measurements as a function of temperature. © 2003 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
75.47.Lx Magnetic oxides
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Magnetic moment compensation in exchange-biased trilayers with antiparallel spin alignment

Yang-Hsiung Fan and Hubert Brückl

Appl. Phys. Lett. 83, 3138 (2003); http://dx.doi.org/10.1063/1.1619565 (3 pages) | Cited 8 times

Online Publication Date: 7 October 2003

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Trilayers consisting of ferromagnetic rare earth and transition metals show an antiparallel exchange coupling of the individual layers. Thus, they can be exploited as hardmagnetic electrodes in spin valve stacks and magnetic tunnel junctions for sensors or memories. Magnetic tunnel junctions consisting of IrMn exchange-biased NiFe/Gd/NiFe trilayers show a compensation of the total magnetic moment at an appropriate choice of the individual layer thicknesses and temperature. This stack setup allows a sixfold enhancement of the exchange-bias field and a strong reduction of the Néel and edge stray field coupling in patterned elements. Therefore, such trilayers are proposed as an alternative for artificial ferrimagnets in the relevant devices. © 2003 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.30.Cr Saturation moments and magnetic susceptibilities
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