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20 Oct 2003

Volume 83, Issue 16, pp. 3233-3430

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3159 (2003); http://dx.doi.org/10.1063/1.1617378 (3 pages)

Zheng Wei Pan, Sheng Dai, David B. Beach, and Douglas H. Lowndes
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Evidence of ferroelastic–ferroelastic phase transition in BiMoxW1−xO6 compounds

R. Jiménez, A. Castro, and B. Jiménez

Appl. Phys. Lett. 83, 3350 (2003); http://dx.doi.org/10.1063/1.1613801 (3 pages) | Cited 13 times

Online Publication Date: 15 October 2003

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Through mechanoelastic, thermal expansion, and dielectric measurements as a function of the temperature on ceramics of BiMoxW1−xO6 (x = 0, 0.10, and 0.25) solid solutions, anomalies in the corresponding parameters are found below the ferroparaelectric phase transition temperature. One of these anomalies, that corresponding to the temperature close to 940 K, contains mechanoelastic features that strongly suggest that we are dealing with a ferroelastic–ferroelastic phase transition. The behavior of thermal expansion and dielectric constant suggests that this phase transition scarcely affects the macroscopic ferroelectric properties in that temperature range. The origin of the proposed ferroelastic–ferroelastic phase transition could be attributed to the tilting of BO6 octahedra. © 2003 American Institute of Physics.
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64.70.K- Solid-solid transitions
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
65.40.De Thermal expansion; thermomechanical effects
77.22.Ch Permittivity (dielectric function)

Switching dynamics in poly(vinylidene fluoride) and copolymers

Heinz von Seggern and Guilherme F. Leal Ferreira

Appl. Phys. Lett. 83, 3353 (2003); http://dx.doi.org/10.1063/1.1616973 (3 pages) | Cited 3 times

Online Publication Date: 15 October 2003

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Theoretical aspects of the field dependent switching dynamics of poly(vinylidene fluoride) and its copolymers have been investigated based on the experimental data of Furukawa [T. Furukawa, Phase Transitions 18, 143 (1989)]. Starting from published theories of the polarization built up for different field strengths and its comparison to experimental results, some characteristic features are observable which are not explainable by present theories. Therefore a model is proposed which includes the electrical properties induced by the two-phase system of poly(vinylidene fluoride) that consists of a ferroelectric and a nonferroelectric phase and a depolarization factor that takes into account the shape of dipolar regimes. In addition, material homogeneities have to be incorporated by means of hysteresis in order to describe the observed reduction of total polarization for small applied electric field strength. © 2003 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

N. A. Pertsev, J. Rodríguez Contreras, V. G. Kukhar, B. Hermanns, H. Kohlstedt, and R. Waser

Appl. Phys. Lett. 83, 3356 (2003); http://dx.doi.org/10.1063/1.1621731 (3 pages) | Cited 38 times

Online Publication Date: 15 October 2003

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The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field Ec increases drastically as the film becomes thinner, reaching values as high as Ec ≈ 1200 kV/cm. To understand this observation, we calculated the thermodynamic coercive field Eth of a ferroelectric film as a function of the misfit strain Sm in an epitaxial system and showed that Eth strongly depends on Sm. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field Ec, we conclude that measurements give an apparent Ec rather than the intrinsic one. An enormous increase of apparent coercive field in ultrathin films may be explained by the presence of a conductive nonferroelectric interface layer. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization

Evidence for two-phase regions in Ba0.5Sr0.5TiO3 thin films from capacitance–voltage data

A. Q. Jiang, J. F. Scott, L. J. Sinnamon, and J. M. Gregg

Appl. Phys. Lett. 83, 3359 (2003); http://dx.doi.org/10.1063/1.1621735 (3 pages) | Cited 3 times

Online Publication Date: 15 October 2003

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The Curie–Weiss plots of reciprocal dielectric constant versus temperature, in Ba0.5Sr0.5TiO3 films grown onto SrRuO3 lower electrodes by pulsed-laser deposition, show two minima below film thicknesses of 280 nm. This double minima implies possible mixed phases in the thin films. A graphical plot of capacitance for decreasing dc voltage versus that of increasing dc voltage shows a well-defined triangular shape for both Pb(Zr0.4Ti0.6)O3 and SrBi2Ta2O9 thin films. However, for a 175-nm-thick Ba0.5Sr0.5TiO3 thin film, the plot shows an overlapping of two triangles, suggesting mixed phases. This graphical method appears to be effective in detecting structural subtleties in ferroelectric capacitors. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point

Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films

I. Stolichnov, A. Tagantsev, N. Setter, J. S. Cross, and M. Tsukada

Appl. Phys. Lett. 83, 3362 (2003); http://dx.doi.org/10.1063/1.1621730 (3 pages) | Cited 22 times

Online Publication Date: 15 October 2003

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The study of polarization reversal in (Pb,La)(Zr,Ti)O3 thin films reveals a drastic difference between the switching kinetics observed at RT and at low temperature of 40 K. In particular, at 40 K, the switching kinetics in studied films is similar to that observed in ferroelectric single crystals. Additionally, the films with completely different switching behavior at RT show very similar switching properties at 40 K. The data analysis suggests that the polarization reversal at RT is limited mainly by nucleation of reversed domains, while at 40 K, the switching kinetics is governed by domain wall motion. It is demonstrated that the measurements of switching kinetics at low temperature can provide useful information for modeling of the important, practical case of polarization reversal at RT. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
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