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27 Oct 2003

Volume 83, Issue 17, pp. 3447-3628

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3453 (2003); http://dx.doi.org/10.1063/1.1622431 (3 pages)

Giacomo Scalari, Stéphane Blaser, Lassaad Ajili, Jérôme Faist, Harvey Beere, Edmund Linfield, David Ritchie, and Giles Davies
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Second-harmonic green generation from two-dimensional χ(2) nonlinear photonic crystal with orthorhombic lattice structure

L.-H. Peng, C.-C. Hsu, and Y.-C. Shih

Appl. Phys. Lett. 83, 3447 (2003); http://dx.doi.org/10.1063/1.1622786 (3 pages) | Cited 21 times

Online Publication Date: 20 October 2003

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We report the synthesis of nonlinear photonic crystals (NPCs) with a periodical distribution of inverted χ(2) nonlinearity having an orthorhombic lattice structure on Z-cut congruent-grown lithium niobate (LiNbO3) substrate. The quasiphase-matching (QPM) mechanism of nonlinear wave interaction is examined by monitoring the far-field emission pattern of second-harmonic generation (SHG) as the NPC is pumped by a Nd:yttritium–aluminum–garnet laser beam. We observe (i) a series distribution of green SHG in a direction transverse to the fundamental beam, and (ii) an increase of phase-matching temperature in the SHG peak signal with the azimuth rotation angle in the x–y plane. These observations are ascribed to the high-order reciprocal lattice vectors assisted QPM–SHG process in a NPC that has a distribution of χ(2) nonlinearity with an orthorhombic crystal symmetry. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Qs Photonic bandgap materials
77.22.Ej Polarization and depolarization

Extruded channel waveguides in a neodymium-doped lead–silicate glass for integrated optic applications

Arshad K. Mairaj, Xian Feng, and Daniel W. Hewak

Appl. Phys. Lett. 83, 3450 (2003); http://dx.doi.org/10.1063/1.1622796 (3 pages) | Cited 2 times

Online Publication Date: 20 October 2003

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We report on the development of channel waveguides in a lead–silicate glass through the extrusion technique. An extruded glass slab with four imbedded fibers each with core size of 8 by 2.5 μm in the horizontal and vertical directions was manufactured. These neodymium-doped channel waveguides were in single-mode operation at 808 nm and had attenuation of 0.1 dB cm−1 at 1.06 μm. The measured 4F3/2 lifetime of 488 μs and emission cross section of 2.5×10−20 cm2 were in good agreement with reported values. The integration of multiple glass variants into a single compact platform is presented as a manufacturing route for complex integrated optical waveguides. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.81.Bm Fabrication, cladding, and splicing
42.81.Qb Fiber waveguides, couplers, and arrays
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
81.10.Fq Growth from melts; zone melting and refining

Population inversion by resonant magnetic confinement in terahertz quantum-cascade lasers

Giacomo Scalari, Stéphane Blaser, Lassaad Ajili, Jérôme Faist, Harvey Beere, Edmund Linfield, David Ritchie, and Giles Davies

Appl. Phys. Lett. 83, 3453 (2003); http://dx.doi.org/10.1063/1.1622431 (3 pages) | Cited 11 times

Online Publication Date: 20 October 2003

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Ultralow-threshold terahertz laser emission exploiting in-plane confinement arising from perpendicular magnetic field applied on a quantum-cascade structure is reported. A special design strategy has been adopted that takes advantage of the selective opening and closing of relaxation channels by elastic scattering between Landau levels. The key effect is a reduction of the lower state lifetime of the lasing transition that produces population inversion. The structure shows laser action only with applied magnetic field and yields threshold current densities as low as 19 A/cm2 at 4.2 K and 32 A/cm2 at 60 K at a frequency of 3.6 THz. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.Fg Quantum wells
71.70.Di Landau levels
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

JianPing Zhang, Shuai Wu, Shiva Rai, Vasavi Mandavilli, Vinod Adivarahan, Ashay Chitnis, Maxim Shatalov, and Muhammad Asif Khan

Appl. Phys. Lett. 83, 3456 (2003); http://dx.doi.org/10.1063/1.1623321 (3 pages) | Cited 20 times

Online Publication Date: 20 October 2003

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We report on a deep UV light-emitting diode over sapphire substrate with AlGaN multiple-quantum-well active region. Pulsed atomic-layer epitaxy deposited low-defect AlN/AlGaN buffers and an optimized active layer design yielded a sharp quantum-well emission peak at 287 nm and very little long-wave secondary emission. For a 100 μm×100 μm unpackaged device, a power of 27 μW at 20 mA dc and a peak external quantum efficiency of 0.1% at 100 mA pulse pumping were measured. Flip-chip packaging should increase these numbers nearly by a factor of 3. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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Transmission of high-power CO2 laser pulses through a plasma channel

I. V. Pogorelsky, I. V. Pavlishin, I. Ben-Zvi, T. Kumita, Y. Kamiya, T. Hirose, B. Greenberg, D. Kaganovich, A. Zigler, N. Andreev, N. Bobrova, and P. Sasorov

Appl. Phys. Lett. 83, 3459 (2003); http://dx.doi.org/10.1063/1.1622983 (3 pages) | Cited 6 times

Online Publication Date: 20 October 2003

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A 5 J, 180 ps CO2 laser pulse is channeled by a 17 mm long capillary discharge. Plasma dynamic simulations confirm occurrence of optical guiding conditions along a plasma column of a quasiparabolic radial profile with the minimum axial free-electron density ∼ 1017 cm−3. © 2003 American Institute of Physics.
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52.38.Dx Laser light absorption in plasmas (collisional, parametric, etc.)
52.38.Hb Self-focussing, channeling, and filamentation in plasmas
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
52.65.-y Plasma simulation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
42.79.Gn Optical waveguides and couplers
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Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Akio Kaneta, Takashi Mutoh, Yoichi Kawakami, Shigeo Fujita, Giichi Marutsuki, Yukio Narukawa, and Takashi Mukai

Appl. Phys. Lett. 83, 3462 (2003); http://dx.doi.org/10.1063/1.1620677 (3 pages) | Cited 29 times

Online Publication Date: 20 October 2003

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Precise identification of recombination dynamics based on local, radiative, and nonradiative recombination has been achieved at room temperature in a blue-light-emitting InxGa1−xN/GaN single-quantum-well structure by comparing the photoluminescence (PL) spectra taken by illumination-collection mode (I-C mode) and those by illumination mode (I-mode) in scanning near-field microscopy. The PL data mapped with PL lifetimes, as well as with PL spectra, revealed that the probed area could be classified into four different regions whose dominating processes are (1) radiative recombination within a probing aperture, (2) nonradiative recombination within an aperture, (3) diffusion of photogenerated excitons/carriers out of an aperture resulting in localized luminescence, and (4) the same diffusion process as (3), but resulting in nonradiative recombination. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.21.Fg Quantum wells
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)

Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu, T. Makimoto, W. Ebert, and E. Kohn

Appl. Phys. Lett. 83, 3465 (2003); http://dx.doi.org/10.1063/1.1622105 (3 pages) | Cited 7 times

Online Publication Date: 20 October 2003

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Stacking faults containing microtwins in (111)-oriented diamond layers grown on a high-pressure high-temperature (HPHT)-synthesized diamond substrate by chemical vapor deposition start to form just on the substrate. The microtwins in the stacking faults form on the {math11} plane, not on the (111) substrate plane. To explain these results, we propose an atomic-scale model in which a foreign atom remains on the HPHT substrate surface and a C atom on the foreign atom cannot form a covalent bond with it. Therefore, twinning of the C atom occurs on the {math11} plane. The next C atoms bond with the twinned C atom in an untwinned (normal crystalline) relation. Consequently, the formation of stacking faults that contain microtwins occurs. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Nn Stacking faults and other planar or extended defects
61.72.Mm Grain and twin boundaries
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.U- Carbon/carbon-based materials

Growth of cubic InN on r-plane sapphire

V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieß, G. Teichert, H. Lu, and W. J. Schaff

Appl. Phys. Lett. 83, 3468 (2003); http://dx.doi.org/10.1063/1.1622985 (3 pages) | Cited 43 times

Online Publication Date: 20 October 2003

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InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a = 4.986 Å. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
52.77.Dq Plasma-based ion implantation and deposition
61.72.Mm Grain and twin boundaries
61.66.Fn Inorganic compounds

Tuning phase stability in nanocomposite multilayers

G. B. Thompson, R. Banerjee, and H. L. Fraser

Appl. Phys. Lett. 83, 3471 (2003); http://dx.doi.org/10.1063/1.1620671 (3 pages) | Cited 3 times

Online Publication Date: 20 October 2003

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As thin-film layers in a multilayered stack are reduced in thickness, changes in phase stability can result within the individual layers. These changes in phase are expected to have a significant influence upon the functional properties of the nanostructured composite. The ability to engineer, or tune, phase stability at this nanometer length scale is of significant importance in order to maximize the functional properties of these materials. We report the prediction and experimental conformation of tuning the hcp to bcc phase stability in Ti for Ti/Nb multilayered nanocomposites. The prediction was based upon selective alloying of Ti with a bcc β stabilizing element using a new form of a thermodynamic phase diagram for predicting phase stability in thin-film multilayers. © 2003 American Institute of Physics.
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68.65.Ac Multilayers
68.65.Cd Superlattices
81.30.Bx Phase diagrams of metals, alloys, and oxides
81.05.Bx Metals, semimetals, and alloys

High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao

Appl. Phys. Lett. 83, 3474 (2003); http://dx.doi.org/10.1063/1.1621462 (3 pages) | Cited 38 times

Online Publication Date: 20 October 2003

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Confinement of silicon nanoparticles in silicon nitride instead of an oxide matrix might materially facilitate its potential applications as a light-emitting component in optoelectronics. We report in this letter the production of high-density (up to 4.0×1012/cm2 from micrographs) silicon nanoparticles in SiNx thin films by chemical vapor deposition on cold substrates. Strong room-temperature photoluminescence was observed in the whole visible light range from the deposits that were postannealed at 500 °C for 2 min. The Si-in-SiNx films provide a significantly more effective photoluminescence than Si-in-SiOx fabricated with similar processing parameters: for blue light, the external quantum efficiency is over three times as large. The present results demonstrate that the nanostructured Si-in-SiNx system can be a very competitive candidate for the development of tunable high-efficiency light-emitting devices. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Qr Amorphous materials; glasses and other disordered solids
61.46.-w Structure of nanoscale materials

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

S. J. Xu, H. J. Wang, S. H. Cheung, Q. Li, X. Q. Dai, M. H. Xie, and S. Y. Tong

Appl. Phys. Lett. 83, 3477 (2003); http://dx.doi.org/10.1063/1.1623006 (3 pages) | Cited 7 times

Online Publication Date: 20 October 2003

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A number of wurtzite GaN epilayers directly grown on 4H-SiC (0001) misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ∼ 70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8° and 21°. Stacking mismatch boundaries are supposed to be the candidate causing the optical transition. Combined with the low-temperature photoluminescence excitation spectra of the films, the location of the electronic level induced by the structural defect is determined to be about 100 meV above the valence-band maximum of GaN. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Nn Stacking faults and other planar or extended defects

Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen

Masahiro Yoshimoto, Hiroaki Yamamoto, Wei Huang, Hiroshi Harima, Junji Saraie, Akiyoshi Chayahara, and Yuji Horino

Appl. Phys. Lett. 83, 3480 (2003); http://dx.doi.org/10.1063/1.1622445 (3 pages) | Cited 42 times

Online Publication Date: 20 October 2003

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The absolute concentration of oxygen in polycrystalline InN was measured using a combination of Rutherford backscattering and x-ray photoemission spectroscopy. Polycrystalline InN was grown on quartz and glassy carbon at 500 °C by molecular-beam epitaxy using In metal and activated nitrogen species generated in rf plasma. The optical bandgap of polycrystalline InN increased from 1.55 to 2.27 eV with increasing oxygen concentration from 1% to 6%. Polycrystalline InN with an optical bandgap of 1.9 eV, which has often been reported, contains oxygen of a molar fraction of 3%. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN

T. S. Jeong, C. J. Youn, M. S. Han, J. W. Yang, and K. Y. Lim

Appl. Phys. Lett. 83, 3483 (2003); http://dx.doi.org/10.1063/1.1623337 (3 pages) | Cited 1 time

Online Publication Date: 20 October 2003

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We have studied the influence of electric fields on the Mg-doped p-GaN by using Raman scattering and photocurrent (PC) measurement. It has been observed that the E2 (LO) mode was quenched upon increasing the electric field. To explain this effect, the combined results obtained from the electric-field-induced Raman scattering and the PC measurement were analyzed. As a result, we have found that the damping of E2 (LO) mode is caused to the phonon–hole scattering due to a strong interaction between the phonons and the photogenerated hole carriers with increasing the applied electric field. © 2003 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
63.20.K- Phonon interactions
78.20.Jq Electro-optical effects

Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures

Madalina Furis, A. N. Cartwright, Hong Wu, and William J. Schaff

Appl. Phys. Lett. 83, 3486 (2003); http://dx.doi.org/10.1063/1.1623335 (3 pages) | Cited 16 times

Online Publication Date: 20 October 2003

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We investigate the photoluminescence (PL) properties of GaN/AlN multiple-quantum-well structures grown by plasma-induced molecular-beam epitaxy by time-resolved PL spectroscopy. Despite the large strain induced by the lattice mismatch between GaN and AlN, the samples exhibit strong room-temperature UV emission characterized by a nonexponential decay that varies across the PL feature. The energy corresponding to the peak of the PL spectra varies as a function of the well width, in agreement with a calculation of the electron–hole (e1h1) transition energy that includes the large piezoelectric and spontaneous polarizations existing inside the wells. The thermal quenching activation energies of the emission intensity can be identified as the donor and acceptor binding energies. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells
78.47.-p Spectroscopy of solid state dynamics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.St Quantum wells

SnGe superstructure materials for Si-based infrared optoelectronics

M. R. Bauer, C. S. Cook, P. Aella, J. Tolle, J. Kouvetakis, P. A. Crozier, A. V. G. Chizmeshya, David J. Smith, and S. Zollner

Appl. Phys. Lett. 83, 3489 (2003); http://dx.doi.org/10.1063/1.1622435 (3 pages) | Cited 13 times

Online Publication Date: 20 October 2003

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We report growth of device-quality, single-crystal SnxGe1−x alloys (with x = 0.02–0.2) directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. The high Sn-content materials are stabilized with ordered superstructures that gives rise to a layered structure adjacent to the Si substrate. Density functional theory simulations were used to elucidate the structural and bonding behavior of this material. Optical determinations show a Ge-like band structure that is substantially redshifted compared to that of elemental Ge. Thus, these systems are excellent candidates for a new generation of infrared devices, with the critical advantage that they can be grown directly on Si. © 2003 American Institute of Physics.
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81.05.Hd Other semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth

Ordered structure and twin boundary of triblock copolymer/silica mesophase thin films

Chi Won Ahn, Theo Rasing, and Mahn Won Kim

Appl. Phys. Lett. 83, 3492 (2003); http://dx.doi.org/10.1063/1.1622433 (3 pages) | Cited 2 times

Online Publication Date: 20 October 2003

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We have observed a twin boundary in a triblock copolymer/silica mesophase thin film, produced by spinning an acidic water-ethanol-tetraethoxysilane solution of a triblock copolymer on a hydrophilic treated silicon substrate. The highly ordered structure of the mesophase thin film is formed by ordering of self-assembled triblock copolymer micelles and was characterized with x-ray reflectivity and transmission electron microscopy. The mesophase thin film consists of a face-centered-cubic lattice and the orientation of the film surface is the {111} plane. Furthermore, a {111} twin plane is observed in the mesophase thin film. © 2003 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
81.07.Pr Organic-inorganic hybrid nanostructures
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology

In situ spectroscopic measurement of transmitted light related to defect formation in SiO2 during femtosecond laser irradiation

N. Fukata, Y. Yamamoto, K. Murakami, M. Hase, and M. Kitajima

Appl. Phys. Lett. 83, 3495 (2003); http://dx.doi.org/10.1063/1.1623939 (3 pages) | Cited 10 times

Online Publication Date: 20 October 2003

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We measured real-time spectra of light transmitted through SiO2 specimens during irradiation of amplified ultrashort laser with a fluence of 540 mJ/cm2. The real-time spectra exhibit a peak at around 400 nm, which significantly depends on the irradiation time. The observation and identification of defects were performed by measurements of electron spin resonance (ESR). Both dependences of the peak at around 400 nm on irradiation time and laser power are in good agreement with those of the ESR signal intensity of positively charged oxygen vacancies (E′ center). This strong correlation shows that self-trapped excitons are created followed by the formation of the E′ center and finally that of ESR inactive centers, namely, oxygen-deficiency centers. © 2003 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
71.55.Ht Other nonmetals
78.40.Ha Other nonmetallic inorganics
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
76.30.Mi Color centers and other defects

Femtosecond laser quenching of the ϵ phase of iron

Tomokazu Sano, Hiroaki Mori, Etsuji Ohmura, and Isamu Miyamoto

Appl. Phys. Lett. 83, 3498 (2003); http://dx.doi.org/10.1063/1.1623935 (3 pages) | Cited 15 times

Online Publication Date: 20 October 2003

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The quenching of the ϵ phase of iron, which has not been observed under a conventional shock compression, was attained using a femtosecond laser. The crystalline structure in a recovered iron sample was determined using an electron backscatter diffraction pattern system. The femtosecond laser driven shock may have the potential to quench high-pressure phases of other materials. © 2003 American Institute of Physics.
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62.50.-p High-pressure effects in solids and liquids
81.05.Bx Metals, semimetals, and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Bg Metals and alloys
64.70.K- Solid-solid transitions
61.66.Bi Elemental solids

Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Gyeong S. Hwang and William A. Goddard

Appl. Phys. Lett. 83, 3501 (2003); http://dx.doi.org/10.1063/1.1619219 (3 pages) | Cited 4 times

Online Publication Date: 20 October 2003

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The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (Bs–Bi) diffusion can become as important as boron-interstitial pair (Bs–Sii) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer et al. [Appl. Phys. Lett. 74, 3996 (1999)] for high-temperature ( ≈ 1200 °C) postimplantion annealing of ultralow-energy ( ≈ 500 eV) implanted high-concentration (>1019 cm−3) boron in silicon. © 2003 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.Cc Kinetics of defect formation and annealing
61.72.S- Impurities in crystals
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Single-crystal organic field effect transistors with the hole mobility ∼ 8 cm2/V s

V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson

Appl. Phys. Lett. 83, 3504 (2003); http://dx.doi.org/10.1063/1.1622799 (3 pages) | Cited 121 times

Online Publication Date: 20 October 2003

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We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect mobility μ ∼ 8 cm2/V s, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. The subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2±0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si ≡ SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (α-Si:H) devices. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Ee Mobility edges; hopping transport
72.80.Le Polymers; organic compounds (including organic semiconductors)

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

G. Tamulaitis, I. Yilmaz, M. S. Shur, R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, S. B. Schujman, and L. J. Schowalter

Appl. Phys. Lett. 83, 3507 (2003); http://dx.doi.org/10.1063/1.1623322 (3 pages) | Cited 5 times

Online Publication Date: 20 October 2003

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Photoluminescence (PL) properties of two GaN epilayers grown in identical conditions on substrates of Al face and N face of bulk single-crystal AlN are studied in the temperature range from 8 to 300 K under weak cw excitation and strong pulsed excitation up to the intensities when electron–hole heating and stimulated emission are observed. At low temperatures and pump intensities, PL of GaN on Al-face AlN is consistent with that of homoepitaxial Ga-face GaN, while GaN on N-face AlN exhibits features indicating the existence of tail localized states. At carrier densities high enough for band-to-band transitions to dominate, the room-temperature PL of GaN on N-face AlN is higher than that in GaN on Al-face AlN due to longer effective lifetime of photoexcited carriers. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.45.+h Stimulated emission

Light-induced narrowing of excitonic absorption lines in GaN

P. Trautman, K. Pakuła, R. Bożek, and J. M. Baranowski

Appl. Phys. Lett. 83, 3510 (2003); http://dx.doi.org/10.1063/1.1622788 (3 pages) | Cited 2 times

Online Publication Date: 20 October 2003

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The fundamental absorption edge of GaN has been investigated in GaN/AlxGa1−xN heterostructures. A broad excitonic line is observed after the sample has been cooled in darkness. A metastable narrowing occurs and three excitonic absorption lines are observed after the sample has been illuminated. Measurements of this effect have been made as a function of temperature and photon energy. It seems that the broadening is induced by an electric field present around dislocations in GaN. This field is reduced by free carriers created during illumination, which results in narrowing of the excitonic lines. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
71.55.Eq III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni–Mg solid solution

June-O Song, Dong-Seok Leem, and Tae-Yeon Seong

Appl. Phys. Lett. 83, 3513 (2003); http://dx.doi.org/10.1063/1.1622984 (3 pages) | Cited 36 times

Online Publication Date: 20 October 2003

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We report on the formation of Ni–Mg solid solution/Au ohmic contacts on p-GaN (5×1017 cm−3). The as-deposited Ni–Mg solid solution (8 nm)/Au (8 nm) contact shows near-linear I–V characteristics. However, oxidizing the contacts at 450 and 550 °C for 1 min in air results in a dramatic improvement in their I–V behaviors, producing specific contact resistance of ∼ 10−6 Ω cm2, which is much better than the conventional oxidized Ni/Au contacts. The light transmittance of the Ni–Mg solid solution/Au contacts annealed at 550 °C is measured to be better than 79% at a wavelength of 460 nm. Based on the I–V measurements, Auger electron spectroscopy, and x-ray photoemission spectroscopy results, possible ohmic formation mechanisms are described. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.05.Ea III-V semiconductors
81.05.Bx Metals, semimetals, and alloys
61.72.Cc Kinetics of defect formation and annealing
73.40.Cg Contact resistance, contact potential

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama, Yoshihiko Moriyama, and Shin-ichi Takagi

Appl. Phys. Lett. 83, 3516 (2003); http://dx.doi.org/10.1063/1.1622442 (3 pages) | Cited 79 times

Online Publication Date: 20 October 2003

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A strained Ge-on-insulator (GOI) structure with a 7-nm-thick Ge layer was fabricated for applications to high-speed transistors. The GOI layer was formed by thermal oxidation of a strained SiGe layer grown epitaxially on a silicon-on-insulator (SOI) wafer. In transmission electron microscopy measurements, the obtained GOI layer exhibited a single-crystal structure with the identical orientation to an original SOI substrate and a smooth Ge/SiO2 interface. The rms of the surface roughness of the GOI layer was evaluated to be 0.4 nm by atomic force microscopy. The residual Si fraction in the GOI layer was estimated to be lower than the detection limit of Raman spectroscopy of 0.5% and also than the electron energy loss spectroscope measurements of 3%. It was found that the obtained GOI layer was compressively strained with a strain of 1.1%, which was estimated by the Raman spectroscopy. Judging from the observed crystal quality and the strain value, this technique is promising for fabrication of high-mobility strained Ge channel of high-performance GOI metal–insulator–semiconductor (MIS) transistors. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
68.55.A- Nucleation and growth
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)
78.30.Hv Other nonmetallic inorganics
79.20.Uv Electron energy loss spectroscopy
68.35.Ct Interface structure and roughness
68.60.Bs Mechanical and acoustical properties

Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells

W. Pan, K. Lai, S. P. Bayrakci, N. P. Ong, D. C. Tsui, L. N. Pfeiffer, and K. W. West

Appl. Phys. Lett. 83, 3519 (2003); http://dx.doi.org/10.1063/1.1623008 (3 pages) | Cited 19 times

Online Publication Date: 20 October 2003

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Cyclotron resonance at the microwave frequency is used to measure the band edge mass (mb) in the two-dimensional hole (2DH) system, confined in 30 nm quantum wells in the Al0.1Ga0.9As/GaAs/Al0.1Ga0.9As heterostructures. We find that for 2DH density p ⩽ 1.0×1010 cm−2, mb is nearly constant, ∼ 0.35me. It increases with increasing density, to ∼ 0.5me at p = 7.4×1010 cm−2. © 2003 American Institute of Physics.
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73.21.Fg Quantum wells
73.20.At Surface states, band structure, electron density of states
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
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