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Applied Physics Letters / Volume 83 / Issue 17 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 83, 3462 (2003); http://dx.doi.org/10.1063/1.1620677 (3 pages)

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Akio Kaneta1, Takashi Mutoh1, Yoichi Kawakami1, Shigeo Fujita1, Giichi Marutsuki2, Yukio Narukawa2, and Takashi Mukai2

1Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto, 606-8501 Japan
2Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima, 774-8601 Japan

(Received 12 May 2003; accepted 28 August 2003)

Precise identification of recombination dynamics based on local, radiative, and nonradiative recombination has been achieved at room temperature in a blue-light-emitting InxGa1−xN/GaN single-quantum-well structure by comparing the photoluminescence (PL) spectra taken by illumination-collection mode (I-C mode) and those by illumination mode (I-mode) in scanning near-field microscopy. The PL data mapped with PL lifetimes, as well as with PL spectra, revealed that the probed area could be classified into four different regions whose dominating processes are (1) radiative recombination within a probing aperture, (2) nonradiative recombination within an aperture, (3) diffusion of photogenerated excitons/carriers out of an aperture resulting in localized luminescence, and (4) the same diffusion process as (3), but resulting in nonradiative recombination. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, radiative lifetimes, nonradiative transitions, time resolved spectra, near-field scanning optical microscopy, photoluminescence, excitons

PACS

  • 78.67.De

    Quantum wells

  • 78.55.Cr

    III-V semiconductors

  • 78.47.-p

    Spectroscopy of solid state dynamics

  • 73.21.Fg

    Quantum wells

  • 73.20.Mf

    Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

  • 71.35.Lk

    Collective effects (Bose effects, phase space filling, and excitonic phase transitions)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1620677

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. Narukawa, S. Saijou, Y. Kawakami, Sg. Fujita, T. Mukai, and S. Nakamura, Appl. Phys. Lett. 74, 558 (1999)APPLAB000074000004000558000001.

    S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996)APPLAB000069000027004188000001.

    Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, and S. Nakamura, Appl. Phys. Lett. 70, 981 (1997)APPLAB000070000008000981000001.

    A. Kaneta, K. Okamoto, Y. Kawakami, Sg. Fujita, G. Marutsuki, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 81, 4353 (2002)APPLAB000081000023004353000001.

    E. Betzig, P. L. Finn, and J. S. Weiner, Appl. Phys. Lett. 60, 2484 (1992)APPLAB000060000020002484000001.

    D. Cherns, S. J. Heniey, and F. A. Ponce, Appl. Phys. Lett. 78, 2691 (2001)APPLAB000078000018002691000001.

    R. C. Miller, D. A. Kleinman, W. A. Nordland, Jr., and A. C. Gossard, Phys. Rev. B 22, 863 (1980).


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