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27 Oct 2003

Volume 83, Issue 17, pp. 3447-3628

Appl. Phys. Lett. 83, 3453 (2003); http://dx.doi.org/10.1063/1.1622431 (3 pages)

Giacomo Scalari, Stéphane Blaser, Lassaad Ajili, Jérôme Faist, Harvey Beere, Edmund Linfield, David Ritchie, and Giles Davies

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Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

A. E. Belyaev, C. T. Foxon, S. V. Novikov, O. Makarovsky, L. Eaves, M. J. Kappers, and C. J. Humphreys

Appl. Phys. Lett. 83, 3626 (2003); http://dx.doi.org/10.1063/1.1622987 (2 pages) | Cited 18 times

Online Publication Date: 20 October 2003

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Abstract Unavailable

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85.30.Mn	Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk	Junction diodes
81.05.Ea	III-V semiconductors
73.61.Ey	III-V semiconductors
73.23.-b	Electronic transport in mesoscopic systems
73.40.Gk	Tunneling