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3 Nov 2003

Volume 83, Issue 18, pp. 3647-3835

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3737 (2003); http://dx.doi.org/10.1063/1.1623315 (3 pages)

Ian Appelbaum, D. J. Monsma, K. J. Russell, V. Narayanamurti, and C. M. Marcus
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Nanoscale pseudoelastic behavior of indented titanium–nickel films

X.-G. Ma and K. Komvopoulos

Appl. Phys. Lett. 83, 3773 (2003); http://dx.doi.org/10.1063/1.1623942 (3 pages) | Cited 45 times

Online Publication Date: 28 October 2003

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The pseudoelastic behavior of shape memory alloy (SMA) materials is a phenomenon associated with reversible thermoelastic martensitic transformation. Despite significant insight into macroscopic pseudoelasticity, relatively little is known about the mechanisms responsible for the pseudoelastic behavior at nanometer scales. Recent demands for powerful microdevices and high-density data storage have motivated SMA film studies. In this study, nanoindentation experiments were performed with sputtered austenite titanium–nickel (TiNi) films using a surface force microscope equipped with an acoustic emission sensor. Results reveal the occurrence of pseudoelasticity at the nanoscale and the significance of normal load, nanoindenter tip radius, and partial unloading on the transition from pseudoelastic to elastic-plastic deformation of the TiNi films. The mechanisms associated with the reversible phase transformation and the energy dissipated in TiNi films exhibiting pseudoelasticity are interpreted in the context of nanoindentation results. The findings of this work demonstrate the high potential of TiNi films in high-density storage and microactuator applications. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.30.Kf Martensitic transformations
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.Qp Friction, tribology, and hardness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
64.70.K- Solid-solid transitions
62.20.F- Deformation and plasticity

Optical and electrical properties of in situ-annealed p-type Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers for applications as infrared detectors

Y. S. Ryu, Y. B. Heo, B. S. Song, S. J. Yoon, Y. J. Kim, T. W. Kang, and T. W. Kim

Appl. Phys. Lett. 83, 3776 (2003); http://dx.doi.org/10.1063/1.1621732 (3 pages) | Cited 9 times

Online Publication Date: 28 October 2003

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Hall-effect, Fourier transform infrared (FTIR) transmission, and photopresponse measurements were performed to investigate the optical and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffers on GaAs (211) B substrates layers by using molecular-beam epitaxy. Hall-effect measurements showed that as-grown n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers due to in situ annealing. The carrier concentration and the mobility as functions of the annealing temperature were determined from the Hall-effect measurements. The FTIR spectra showed that the transmission intensity had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. The activation energy and the carrier lifetime of the annealed Hg0.7Cd0.3Te epilayer were 0.25 eV and 160 ns, respectively. These results indicate that p-type Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers due to in situ thermal annealing hold promise for potential applications in infrared detector technologies. © 2003 American Institute of Physics.
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73.61.Ga II-VI semiconductors
78.66.Hf II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.30.Fs III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Determination of size and composition of optically active CdZnSe/ZnBeSe quantum dots

Y. Gu, Igor L. Kuskovsky, J. Fung, R. Robinson, I. P. Herman, G. F. Neumark, X. Zhou, S. P. Guo, and M. C. Tamargo

Appl. Phys. Lett. 83, 3779 (2003); http://dx.doi.org/10.1063/1.1623941 (3 pages) | Cited 8 times

Online Publication Date: 28 October 2003

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The size and composition of optically active CdxZn1−xSe/Zn0.97Be0.03Se quantum dots (QDs) are determined using photoluminescence, photoluminescence excitation, and Raman scattering spectroscopies combined with a model of photoluminescence and LO phonon energies. The diameters of optically active QDs range from 5.1 to 8.0 nm with Cd composition in the range of 47%–54%, corresponding to the “small” QDs group. Additionally, surface phonons from QDs are observed in this system. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors

Planar nanocontacts with atomically controlled separation

Y. V. Kervennic, D. Vanmaekelbergh, L. P Kouwenhoven, and H. S. J Van der Zant

Appl. Phys. Lett. 83, 3782 (2003); http://dx.doi.org/10.1063/1.1623317 (3 pages) | Cited 17 times

Online Publication Date: 28 October 2003

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We have developed a technology to reproducibly make gaps with distance control on the single-atom scale. The gold contacts are flat on the nanometer scale and are fabricated on an oxidized aluminum film that serves as a gate. We show that these contacts are clean and can be stabilized via chemical functionalization. Deposition of conjugated molecules leads to an increase in the gap conductance of several orders of magnitude. Stable current–voltage characteristics at room temperature are slightly nonlinear. At low temperature, they are highly nonlinear and show a clear gate effect. © 2003 American Institute of Physics.
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73.63.Rt Nanoscale contacts
81.07.Lk Nanocontacts
85.65.+h Molecular electronic devices

Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As

Jin Soo Kim, Jin Hong Lee, Sung Ui Hong, Won Seok Han, Ho-Sang Kwack, and Dae Kon Oh

Appl. Phys. Lett. 83, 3785 (2003); http://dx.doi.org/10.1063/1.1623947 (3 pages) | Cited 9 times

Online Publication Date: 28 October 2003

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Influences of a thin In0.32Ga0.68As layer on the structural and optical properties of self-assembled InAs quantum dots (QDs) embedded in an InAl(Ga)As matrix, which was lattice-matched to an InP substrate, were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. AFM and TEM images showed that the size of QDs grown on a thin In0.32Ga0.68As layer was increased, with a reduction in size fluctuation compared to that of QDs on an InAl(Ga)As layer. The shape of the QD was also more isotropic, indicating that the QD would be closer to an ideal zero-dimensional system. The PL peak position of the InAs QDs grown on a 1.5 nm In0.32Ga0.68As layer was 1.55 μm, with linewidth broadening of 64 meV that was somewhat narrower than those of the QD samples without the In0.32Ga0.68As layer, which agreed well with the AFM and TEM results. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.55.Cr III-V semiconductors
81.16.Dn Self-assembly

Conducting-tip atomic force microscopy for injection and probing of localized charges in silicon nanocrystals

Souri Banerjee, Mohamed Ali Salem, and Shunri Oda

Appl. Phys. Lett. 83, 3788 (2003); http://dx.doi.org/10.1063/1.1624469 (3 pages) | Cited 15 times

Online Publication Date: 28 October 2003

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A conducting-tip atomic force microscopy (AFM) is utilized to inject localized charges in an ensemble of closely packed nanocrystalline Si dots prepared by plasma decomposition of SiH4. A noncontact-mode topography imaging carried out to probe the charging effect indicates an increase in the apparent height of the Si nanocrystal. A generalized tip-sample force interaction model is also developed to quantitatively evaluate the deposited charge. The study prescribes that the presence of surface charges might result in an overestimation of the actual height of an object measured by AFM, which could be nontrivial for a nanomaterial in particular. © 2003 American Institute of Physics.
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68.37.Ps Atomic force microscopy (AFM)
68.47.Fg Semiconductor surfaces
73.22.-f Electronic structure of nanoscale materials and related systems
61.46.-w Structure of nanoscale materials

Dynamics of electric field induced particle alignment in nonpolar polymer matrix

Xiangyang Tai, Guozhang Wu, Hiroshi Yui, Shigeo Asai, and Masao Sumita

Appl. Phys. Lett. 83, 3791 (2003); http://dx.doi.org/10.1063/1.1624468 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2003

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The dynamics of electric field induced particle alignment in nonpolar polymer matrix to build one-dimensional conductive materials was investigated. The influence of electric field on particle alignment was real-time traced by dynamic percolation measurement using carbon black (CB) filled polyethylene as a model system. The activation energy of the continuous CB path formation was calculated and found to be unchanged with CB alignment. The critical percolation concentration at thermodynamic equilibrium state ϕc∗ was deduced to characterize the anisotropism of network structure, by which the thermodynamic prerequisite electric field E∗ for the transition from three-dimensional isotropic network to one-dimensional chain could be easily found out. © 2003 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
64.60.A- Specific approaches applied to studies of phase transitions
72.80.Tm Composite materials

Scanning tunneling microscope mediated nanostructure fabrication from GeH4 on Si(111)-(7×7)

U. R. Schöffel, H. Rauscher, and R. J. Behm

Appl. Phys. Lett. 83, 3794 (2003); http://dx.doi.org/10.1063/1.1625110 (3 pages) | Cited 4 times

Online Publication Date: 28 October 2003

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The tungsten tip of a scanning tunneling microscope, covered with GeHx by exposure to GeH4, was used to locally grow nanometer-sized Ge or GeHx islands on a Si(111)-(7×7) surface. This was achieved by transfer of material from the tip to the surface, induced by voltage pulses. A model, based on the diffusion of adsorbates on the tip and desorption stimulated by an electric field, is presented to account for the results. © 2003 American Institute of Physics.
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81.16.Ta Atom manipulation
68.47.Fg Semiconductor surfaces
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation

Growth mechanism and characterization of zinc oxide hexagonal columns

Jason B. Baxter, Feng Wu, and Eray S. Aydil

Appl. Phys. Lett. 83, 3797 (2003); http://dx.doi.org/10.1063/1.1624467 (3 pages) | Cited 43 times

Online Publication Date: 28 October 2003

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We report on the growth mechanism, structure, and luminescence properties of ZnO hexagonal columns grown from Zn vapor and air plasma. Single-crystal ZnO columns grow in the [0001] direction through repeated nucleation and growth of epitaxial hexagonal pyramids on the c-planes. Homoepitaxial nucleation of three-dimensional ZnO pyramids is most likely due to the Ehrlich–Schwoebel effect. This mechanism produces columns that are a few hundred nanometers in diameter and up to 2 μm in length. Convergent beam electron diffraction shows that the columns grow with Zn polarity in the [0001] direction. Cathodoluminescence and photoluminescence measurements show near-bandedge emission (3.29 eV) with no emission associated with oxygen vacancies at 2.5 eV. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Et II-VI semiconductors
68.55.A- Nucleation and growth
78.60.Hk Cathodoluminescence, ionoluminescence

Fabrication and electrical characterization of polyaniline-based nanofibers with diameter below 30 nm

Yangxin Zhou, Marcus Freitag, James Hone, Cristian Staii, A. T. Johnson, Nicholas J. Pinto, and A. G. MacDiarmid

Appl. Phys. Lett. 83, 3800 (2003); http://dx.doi.org/10.1063/1.1622108 (3 pages) | Cited 75 times

Online Publication Date: 28 October 2003

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We fabricate and electrically characterize electrospun nanofibers of doped polyaniline/polyethylene oxide (PAn/PEO) blend with sub-30 nm diameter. Fiber diameters near 5 nm are obtained for optimized process parameters. Scanning conductance microscopy (SCM) shows that fibers with diameter below 15 nm are electrically insulating; the small diameter may allow complete dedoping in air or be smaller than phase-separated grains of PAn and PEO. Electrical contacts to nanofibers are made by shadow mask evaporation with no chemical or thermal damage to the fibers. Single fiber I–V characteristics show that thin fibers conduct more poorly than thick ones, in agreement with SCM data. I–Vs of asymmetric fibers are rectifying, consistent with formation of Schottky barriers at the nanofiber-metal contacts. © 2003 American Institute of Physics.
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73.63.Rt Nanoscale contacts
81.07.Lk Nanocontacts
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification

Effect of the large current flow on the low-temperature transport properties in a bundle of single-walled carbon nanotubes

T. Fuse, S. Moriyama, M. Suzuki, Y. Aoyagi, and K. Ishibashi

Appl. Phys. Lett. 83, 3803 (2003); http://dx.doi.org/10.1063/1.1624641 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2003

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A large current flowing process has been used at 1.5 K to modify transport properties of quantum dots in a bundle of single-walled carbon nanotubes. After the processes were applied to the samples a few times, Coulomb oscillations started to be observed that did not appear before the process. The number of Coulomb peaks decreased as the process was repeated. The experimental observations could be explained by the simple model that the nanotube bundle was composed of many single and multiquantum dots in parallel, and some of them were broken by the current flowing process. © 2003 American Institute of Physics.
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73.63.Fg Nanotubes
73.63.Kv Quantum dots
73.23.Hk Coulomb blockade; single-electron tunneling

Field emission from zinc oxide nanopins

C. X. Xu and X. W. Sun

Appl. Phys. Lett. 83, 3806 (2003); http://dx.doi.org/10.1063/1.1625774 (3 pages) | Cited 152 times

Online Publication Date: 28 October 2003

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Nanostructural zinc oxide pins have been fabricated by vapor transport on copper-coated silicon wafer. The nanopins are composed of hexagonal wurtzite-phase zinc oxide with single crystal quality. The growth process includes two steps: (1) growth of a micron-sized zinc oxide dot on the substrate and (2) growth of a sharp tip from the zinc oxide dot. The field emission of the nanopins shows a low field emission threshold (1.92 V/μm at a current density of 0.1 μA/cm−2) and high current density with a field enhancement factor of 657. The emission current density and the electric field follow Fowler–Nordheim relationship. The good performance for field emission is attributed to the single-crystalline structure and the nanopin geometry. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.05.Dz II-VI semiconductors
81.10.Bk Growth from vapor
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