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3 Nov 2003

Volume 83, Issue 18, pp. 3647-3835

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3737 (2003); http://dx.doi.org/10.1063/1.1623315 (3 pages)

Ian Appelbaum, D. J. Monsma, K. J. Russell, V. Narayanamurti, and C. M. Marcus
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Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices

C. L. Tseng, M. J. Youh, G. P. Moore, M. A. Hopkins, R. Stevens, and W. N. Wang

Appl. Phys. Lett. 83, 3677 (2003); http://dx.doi.org/10.1063/1.1619558 (3 pages) | Cited 6 times

Online Publication Date: 28 October 2003

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The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing

InAs quantum dots on the GaAs(math math math)B surface

Y. Temko, T. Suzuki, M. C. Xu, and K. Jacobi

Appl. Phys. Lett. 83, 3680 (2003); http://dx.doi.org/10.1063/1.1624472 (3 pages) | Cited 9 times

Online Publication Date: 28 October 2003

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We report on InAs quantum dots grown by molecular-beam epitaxy on the stable GaAs(math math math)B surface discovered recently. Atomically resolved scanning tunneling microscopy images acquired in situ reveal compact quantum dots terminated by (math0math), (0mathmath), and (mathmathmath)B facets and an unresolved vicinal (00math) region. A flat base of (mathmathmath)B orientation extends in front of the (math0math) and (mathmathmath)B facets. The quantum dots exhibit a very narrow size distribution attributed to the well ordered substrate and to high nucleation efficiency. © 2003 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Infrared reflectivity of (GaAs)m/(AlAs)n superlattices

G. Yu, N. L. Rowell, D. J. Lockwood, and Z. R. Wasilewski

Appl. Phys. Lett. 83, 3683 (2003); http://dx.doi.org/10.1063/1.1622782 (3 pages) | Cited 9 times

Online Publication Date: 28 October 2003

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We report an original analysis method to model the p-polarized infrared reflectivity (IR) spectra of (GaAs)m/(AlAs)n superlattices (m = 36, 4<n<7) grown on semi-insulating GaAs (100). In our fitting procedure, the first derivative of the IR spectrum was calculated numerically and the respective dielectric functions of the AlAs barriers and GaAs quantum wells were described by two independent factorized models, with the thickness of the AlAs layers treated as a free parameter. The longitudinal and transverse optical phonon frequencies of the GaAs layers were found to be independent of the AlAs layer thickness, while those of the AlAs layer decreased in accordance with theory and their linewidths increased with increasing confinement. © 2003 American Institute of Physics.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.30.Fs III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
73.21.Cd Superlattices
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.65.Cd Superlattices

Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates

Z. G. Hu, J. H. Ma, Z. M. Huang, Y. N. Wu, G. S. Wang, and J. H. Chu

Appl. Phys. Lett. 83, 3686 (2003); http://dx.doi.org/10.1063/1.1619208 (3 pages) | Cited 16 times

Online Publication Date: 28 October 2003

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Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited directly on Si(100) substrates under annealing temperatures of 590 and 700 °C. The optical properties of the BLT films have been investigated using spectroscopic ellipsometry at room temperature in the 0.73–6 eV energy range. To model the dielectric functions of the BLT films, the double Tauc–Lorentz dispersion relation was successfully adopted. A four-layer model was used to fit the measured pseudodielectric function in order to deduce the complex dielectric functions. The results show that the annealing temperature mainly affects the dielectric functions of the BLT films beyond the fundamental band gap energy. The volume fraction of air present in the surface rough layer increases with increasing annealing temperature. The fundamental band gap was observed to shift slightly to a higher energy at a high annealing temperature. The difference of the optical properties due to the structure changes testifies the x-ray diffraction spectral results. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Gh Other heat and thermomechanical treatments
68.55.-a Thin film structure and morphology

Line spectra from doped nano-oxide: A design for nanooptics

Igor S. Altman, Peter V. Pikhitsa, Mansoo Choi, Jae In Jeong, Ho-Jun Song, Igor E. Agranovski, and Thor E. Bostrom

Appl. Phys. Lett. 83, 3689 (2003); http://dx.doi.org/10.1063/1.1624638 (3 pages) | Cited 8 times

Online Publication Date: 28 October 2003

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We report the photoluminescence (PL) observation of extremely sharp zero-phonon lines originating from transitions of Mn2+ and Cr3+ ions embedded into MgO matrix of nanoscale (nanocrystals and films). The excellent performance of PL compared to that from quantum dots makes our finding attractive for applications. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials

F spots and domain patterns in rhombohedral PbZr0.90Ti0.10O3

Haitao Huang, Li Min Zhou, Jun Guo, Huey Hoon Hng, Joo Tien Oh, and Peter Hing

Appl. Phys. Lett. 83, 3692 (2003); http://dx.doi.org/10.1063/1.1624632 (3 pages) | Cited 8 times

Online Publication Date: 28 October 2003

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The microstructure of PbZr0.9Ti0.1O3 ceramics is studied by transmission electron microscopy. Two types of domain patterns are found, namely, the 109° domain with the F spots (½{hkl} superlattice reflections) observed in neighboring domains and the 71° domain with the F spots observed in one domain and having disappeared in the neighboring one. The computer simulation indicates that the F spots are forbidden at h = k positions so that they do not appear in the electron diffraction pattern if viewed along the [math10] direction. Based on this result, the observed two types of domain patterns and their corresponding diffraction patterns can be explained. © 2003 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si

Zhenyang Zhong, J. Stangl, F. Schäffler, and G. Bauer

Appl. Phys. Lett. 83, 3695 (2003); http://dx.doi.org/10.1063/1.1622785 (3 pages) | Cited 12 times

Online Publication Date: 28 October 2003

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The surface morphology of Ge-rich islands on Si (001) substrates capped with 0 to 10 monolayers (MLs) of Si at 550 °C was investigated by atomic force microscopy. An evolution of the island shape from domes to pyramids was observed, which coincides with a dramatic decrease of the island height during overgrowth. The average lateral lattice constant 〈a∥〉 of the Ge-rich islands for a series of samples was obtained from grazing incidence x-ray diffraction. 〈a∥〉 decreases appreciably with deposition of the Si cap layer, even for a cap thickness as low as 1.3 MLs. At the beginning of overgrowth, Si incorporation promotes the shape evolution and the size variation of the islands. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Hd Other semiconductors
68.37.Ps Atomic force microscopy (AFM)
68.49.Uv X-ray standing waves

Formation and localization of internal polymer columnar structures in liquid crystal cells

Qingbing Wang, L.-C. Chien, and Satyendra Kumar

Appl. Phys. Lett. 83, 3698 (2003); http://dx.doi.org/10.1063/1.1623325 (3 pages) | Cited 3 times

Online Publication Date: 28 October 2003

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Internal polymer columnar structures in liquid crystal (LC) cells have been produced using the method of thermally-induced phase separation of LC/prepolymer solution and solidified by photopolymerization. These polymer columns adhere to both substrates and enhance control of the LC cell spacing and mechanical stability. The existence and profile of the polymer columns were investigated by optical and scanning electron microscopy techniques. Supertwisted nematic LC cells with polymer columnar structures have been constructed using this method and their electro-optical characteristics measured. © 2003 American Institute of Physics.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
42.79.Kr Display devices, liquid-crystal devices
78.20.Jq Electro-optical effects
61.25.H- Macromolecular and polymers solutions; polymer melts
42.70.Df Liquid crystals
64.75.-g Phase equilibria
61.41.+e Polymers, elastomers, and plastics
82.50.-m Photochemistry
64.70.D- Solid-liquid transitions
81.30.Fb Solidification
42.70.Jk Polymers and organics

Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy

J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee, and J. M. Arias

Appl. Phys. Lett. 83, 3701 (2003); http://dx.doi.org/10.1063/1.1625776 (3 pages) | Cited 6 times

Online Publication Date: 28 October 2003

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Infrared absorption in HgCdTe epitaxial material has been investigated using infrared spectromicroscopy to study the uniformity at dimensions representative of typical infrared detectors. Infrared transmission measurements were performed on HgCdTe material using an infrared beam diameter of 9 μm. Line scans and area maps of transmission spectra were obtained to investigate statistical variations in infrared absorption. The HgCdTe material demonstrates a high degree of uniformity, with a standard deviation in absorption coefficient near the sensitive turn-on region of less than 3% and standard deviation in extracted Hg1-xCdxTe compositon of 3×10−4. © 2003 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.60.Gz Photodetectors (including infrared and CCD detectors)

Solid-liquid phase transitions in CdTe crystals under pulsed laser irradiation

V. A. Gnatyuk, T. Aoki, O. S. Gorodnychenko, and Y. Hatanaka

Appl. Phys. Lett. 83, 3704 (2003); http://dx.doi.org/10.1063/1.1625777 (3 pages) | Cited 7 times

Online Publication Date: 28 October 2003

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Phase transitions in CdTe crystals irradiated with nanosecond KrF (248 nm) excimer laser pulses were investigated by a numerical simulation and time-resolved reflectivity method. By solving the time-dependent heat flow equation and taking into account the temperature dependences of semiconductor parameters, the time dependence of the surface temperature in a CdTe crystal was calculated as a function of laser pulse intensity. The dynamics of laser-induced melting was directly monitored by measurements of the reflection coefficient of a probe laser beam (532 nm). The melting and ablation thresholds have been determined as 2.5 and 7.3 MW/cm2, respectively. © 2003 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
68.35.Rh Phase transitions and critical phenomena
64.70.D- Solid-liquid transitions
79.20.Ds Laser-beam impact phenomena
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.68.+m Optical properties of surfaces
68.35.Md Surface thermodynamics, surface energies
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