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10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
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Observation by photothermal microscopy of increased silica absorption in laser damage induced by gold nanoparticles

F. Bonneau, P. Combis, J. L. Rullier, M. Commandré, A. During, J. Y. Natoli, M. J. Pellin, M. R. Savina, E. Cottancin, and M. Pellarin

Appl. Phys. Lett. 83, 3855 (2003); http://dx.doi.org/10.1063/1.1622790 (3 pages) | Cited 17 times

Online Publication Date: 3 November 2003

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In order to understand laser-induced damage in glass, we subjected engineered SiO2 thin films containing sub-micron gold inclusions to high fluences, and observed the results using several means of analysis. We found decoupling in time between the emission of gold and that of silicon with samples containing gold spheres of diameter 3 nm. We have analyzed the changes in the silica optical absorption at 1064 nm, using photothermal deflection microscopy. We find, upon exceeding a sharp fluence threshold, a thousand-fold increase in absorption of the silica matrix around the inclusion. We conclude that ions from the inclusion permeate the surrounding silica, and form a highly absorbent mixture. © 2003 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
61.82.Rx Nanocrystalline materials
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials

Operational stability of electrophosphorescent devices containing p and n doped transport layers

Brian W. D’Andrade, Stephen R. Forrest, and Anna B. Chwang

Appl. Phys. Lett. 83, 3858 (2003); http://dx.doi.org/10.1063/1.1624473 (3 pages) | Cited 65 times

Online Publication Date: 3 November 2003

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The operational stability of low-operating voltage p-i-n electrophosphorescent devices containing fac-tris(2-phenylpyridine) iridium as the emissive dopant is investigated. In these devices, Li-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) served as an n-type electron transport layer, or as an undoped hole blocking layer (HBL), and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane doped 4,4′,4″-tris(3-methylphenylphenylamino) triphenylamine served as a p-type hole transport layer. The glass transition temperature of BPhen can be increased by the addition of aluminum(III)bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq), resulting in improved morphological stability, thereby reducing device degradation. When thermally stable BAlq was used as a HBL in both p-i-n and undoped devices, the extrapolated operational lifetime (normalized to an initial luminance of 100 cd/m2) of the p-i-n and undoped devices are 18 000 and 60 000 h, respectively, indicating that the presence of p and n dopants can accelerate device degradation. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

White-light supercontinuum interference of self-focused filaments in water

K. Cook, A. K. Kar, and R. A. Lamb

Appl. Phys. Lett. 83, 3861 (2003); http://dx.doi.org/10.1063/1.1624640 (3 pages) | Cited 19 times

Online Publication Date: 3 November 2003

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The generation of a horizontal array of stable white-light continuum (WLC) filaments in water is observed using a cylindrical planoconvex lens. The widths of these filaments are measured both directly by imaging and indirectly through analysis of filament interference patterns. The stable interference pattern created by a filament pair is similar to that due to a pair of Young’s slits, and implies a constant phase relationship between the WLC generated by each filament. The experimental results agree well with theoretical predictions for the number of fringes and the fringe spacing. © 2003 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Hz Interference

Fast switching dual-frequency liquid crystal optical retarder, driven by an amplitude and frequency modulated voltage

Andrii B. Golovin, Sergij V. Shiyanovskii, and Oleg D. Lavrentovich

Appl. Phys. Lett. 83, 3864 (2003); http://dx.doi.org/10.1063/1.1625114 (3 pages) | Cited 28 times

Online Publication Date: 3 November 2003

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We demonstrate theoretically and experimentally a fast-switching nematic optical retarder capable to switch a few microns of optical retardation in less than 1 ms. For example, a nematic cell of thickness 14.5 μm switches 0.3 μm of retardation within 0.15 ms and 2.5 μm within 0.5 ms for single passage of beam. The corresponding figure of merit is two orders of magnitude higher than the one known for the best nematic materials synthesized so far. The fit is achieved by employing a dual-frequency nematic liquid crystal in high-pretilt angle cells and a special addressing scheme that features amplitude and frequency modulated voltage. The scheme can be used in spatial light modulators, retarders, beam deflectors, polarization rotator, and displays. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Ci Filters, zone plates, and polarizers
42.70.Df Liquid crystals

Frequency comb generation by four-wave mixing in a multicore photonic crystal fiber

A. V. Husakou and J. Herrmann

Appl. Phys. Lett. 83, 3867 (2003); http://dx.doi.org/10.1063/1.1626000 (3 pages) | Cited 6 times

Online Publication Date: 3 November 2003

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We show that a frequency comb in the telecommunication region around 1550 nm can be generated by four-wave mixing in a doped multicore photonic crystal fiber made from a highly nonlinear glass. Pumping the whole photonic crystal fiber leads to the generation of multichannel signals with well separated single frequencies due to the variation of the dopant mole fraction from core to core. This approach has the potential for a wavelength-division-multiplexing source in telecommunication. © 2003 American Institute of Physics.
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42.81.Wg Other fiber-optical devices
42.70.Qs Photonic bandgap materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Photonic bandedge lasers in two-dimensional square-lattice photonic crystal slabs

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages) | Cited 41 times

Online Publication Date: 3 November 2003

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Square-lattice bandedge lasers are realized by room-temperature optical pumping of photonic crystal air-bridge slabs of InGaAsP quantum wells emitting at 1.5 μm. Lasing modes corresponding to the second bandedges near the X and M points are identified from their spectral positions and polarization directions. A low threshold incident pump power of less than 1 mW is achieved for the laser operating at the second bandedge near the X and M points, with only 15×15 lattice points. The measured characteristics of the bandedge lasers closely agree with the result of calculations based on the plane-wave-expansion method and the finite-difference time-domain method. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Terahertz quantum cascade lasers in a magnetic field

V. Tamosiunas, R. Zobl, J. Ulrich, K. Unterrainer, R. Colombelli, C. Gmachl, K. West, L. Pfeiffer, and F. Capasso

Appl. Phys. Lett. 83, 3873 (2003); http://dx.doi.org/10.1063/1.1626018 (3 pages) | Cited 16 times

Online Publication Date: 3 November 2003

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We have investigated the behavior of a terahertz quantum cascade laser in an external magnetic field. A reduction of the threshold current density and a simultaneous enhancement of the laser emission intensity are observed. Although several mechanisms can induce this effect, the suppression of nonradiative Auger-intersubband transitions through Landau quantization of the in-plane electron motion is the most probable candidate. In addition, the injection rate via resonant inter-Landau-level transfer and the waveguide properties are modulated by the field. We also observed clear shifts of the emission spectra when the external magnetic field is applied, while operating the device at constant voltage or current. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Linear and ultrafast nonlinear optical response of Ag:Bi2O3 composite films

P. Zhou, G. J. You, Y. G. Li, T. Han, J. Li, S. Y. Wang, L. Y. Chen, Y. Liu, and S. X. Qian

Appl. Phys. Lett. 83, 3876 (2003); http://dx.doi.org/10.1063/1.1626023 (3 pages) | Cited 30 times

Online Publication Date: 3 November 2003

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Silver/bismuth oxide composite thin films with Ag concentration varying from 13.2% to 59.3% were prepared by cosputtering in a multitarget magnetron sputtering system. The absorption spectra of these thin films were measured, and the absorption peaks due to surface plasmon resonance of Ag particles showed a redshift behavior with increasing Ag concentration. By using the femtosecond time-resolved optical Kerr effect technique under 800 nm wavelength, the nonlinear optical properties of these films were investigated. The Kerr signals showed an ultrafast rise, suggesting that the main physical mechanism involved in the optical nonlinearity of Ag:Bi2O3 thin films on the femtosecond scale was the pure electronic contributions. The maximum value of the third-order nonlinear optical susceptibility of Ag:Bi2O3 thin films was 4.1×10−10 esu, and occurred at a Ag concentration of about 35.7%. © 2003 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Sq Composite materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.47.-p Spectroscopy of solid state dynamics
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Voltage-tunable, two-band mid-infrared detection based on Si/SiGe quantum-cascade injector structures

P. Rauter, T. Fromherz, G. Bauer, L. Diehl, G. Dehlinger, H. Sigg, D. Grützmacher, and H. Schneider

Appl. Phys. Lett. 83, 3879 (2003); http://dx.doi.org/10.1063/1.1626257 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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Photocurrent spectroscopy has been performed on doped Si/SiGe valence band cascade injector structures in the mid-infrared spectral region. A large tunability of the photoresponse peak wavelength (from 5.2 to 3.2 μm) by an externally applied electric field is observed. The tunability of the photoresponse is a consequence of an electric-field-induced transfer of holes from the deepest to the shallowest quantum well of the injector sequence. Depending on the bias voltage, dark-current-limited peak detectivities of D∗ = 1×109 cmmath/W (peak wavelength 5 μm at −4 V bias) and of D∗ = 1.3×109 cmmath/W (peak wavelength 3.2 μm at 5 V bias) are obtained at a temperature of 77 K. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
72.40.+w Photoconduction and photovoltaic effects

Thermal profiling for optical characterization of waveguide devices

J. A. Hudgings, K. P. Pipe, and R. J. Ram

Appl. Phys. Lett. 83, 3882 (2003); http://dx.doi.org/10.1063/1.1625790 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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We demonstrate a thermal profiling technique for wafer-scale testing of the optical power distribution in photonic integrated circuits. Radiative cooling of the lattice of a semiconductor optical amplifier is observed in response to an optical signal; likewise, lattice heating occurs in an optically injected absorber. We develop a total energy balance model that can be used to quantify modal gain or absorption within these devices, along with longitudinal and vertical thermal impedances and heat transfer coefficients. Spatially resolved thermal profiling in conjunction with our energy balance model accurately describes the optical power distribution inside optoelectronic devices, without recourse to direct optical measurement. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.82.Bq Design and performance testing of integrated-optical systems
42.79.Gn Optical waveguides and couplers
42.55.Px Semiconductor lasers; laser diodes

Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes

J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, and M. Helm

Appl. Phys. Lett. 83, 3885 (2003); http://dx.doi.org/10.1063/1.1626809 (3 pages) | Cited 24 times

Online Publication Date: 3 November 2003

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Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the total intensity with increasing temperature. The implantation dose and temperature dependences of the relative peak intensities provide evidence for the relevance of excitonic traps as a supply for free electron-hole pairs and thus for the origin of the enhanced electroluminescence at elevated temperatures. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.35.Ee Electron-hole drops and electron-hole plasma
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Ultrashort electron bunches generated with high-intensity lasers: Applications to injectors and x-ray sources

S. Fritzler, K. Ta Phuoc, V. Malka, A. Rousse, and E. Lefebvre

Appl. Phys. Lett. 83, 3888 (2003); http://dx.doi.org/10.1063/1.1626016 (3 pages) | Cited 15 times

Online Publication Date: 3 November 2003

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The efficiency of the “forced laser wakefield” regime has recently been demonstrated, with the acceleration of electrons up to 200 MeV with a short pulse, 10 Hz laser [V. Malka et al., Science 298, 1596 (2002)]. Numerical simulations presented in this letter provide strong indications that the resulting electron bunches also have very short durations, less than 100 fs. All these features combine to suggest a number of interesting applications for such a source. We discuss its use as a high-energy injector for conventional accelerators, and assess the characteristics of the x-ray pulses that could be obtained via the channelling effect or Thomson scattering with this electron pulse. © 2003 American Institute of Physics.
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29.25.Bx Electron sources
52.38.Ph X-ray, γ-ray, and particle generation
29.27.Ac Beam injection and extraction
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.20.-c Accelerators
29.27.Eg Beam handling; beam transport
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Defect generation by preferred nucleation in epitaxial Sr2RuO4/LaAlO3

Mark A. Zurbuchen, Yunfa Jia, Stacy Knapp, Altaf H. Carim, Darrell G. Schlom, and X. Q. Pan

Appl. Phys. Lett. 83, 3891 (2003); http://dx.doi.org/10.1063/1.1624631 (3 pages) | Cited 3 times

Online Publication Date: 3 November 2003

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The atomic structure of the film–substrate interface of a (001) Sr2RuO4/(100)c LaAlO3 film, determined by high-resolution transmission electron microscopy and simulation, is reported. The structure of superconductivity-quenching Δc ≈ 0.25 nm out-of-phase boundaries (OPBs) in the film is also reported. Growth in one region on the La-terminated surface is observed to nucleate with a SrO layer. Because two structurally equivalent SrO layers exist within the unit cell, two neighboring nuclei with differing growth order (SrO-RuO2-SrO or RuO2-SrO-SrO) will nucleate an OPB where their misaligned growth fronts meet. Strategies to avoid OPB generation by this mechanism are suggested, which it is hoped may ultimately lead to superconducting Sr2RuO4 films. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
74.78.-w Superconducting films and low-dimensional structures
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Fast diffusion in ZrTiCuNiBe melts

A. Meyer, W. Petry, M. Koza, and M.-P. Macht

Appl. Phys. Lett. 83, 3894 (2003); http://dx.doi.org/10.1063/1.1625793 (3 pages) | Cited 22 times

Online Publication Date: 3 November 2003

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Atomic transport in Zr41.2Ti13.8Cu12.5Ni10Be22.5 and Zr46.8Ti8.2Cu7.5Ni10Be27.5 melts has been investigated with incoherent, quasielastic neutron scattering. From the q dependence of the quasielastic signal an average self-diffusion coefficient of the incoherent scatterers Ni and Ti has been obtained. Values are on a 10−10 m2 s−1 scale. In contrast to the viscosity, the diffusion coefficient is rather independent of the alloy’s composition. Above the liquidus temperature times scales for Ni and Ti self diffusion and for viscous flow differ by up to two orders of magnitude: It appears, that the smaller atoms diffuse in a relative immobile Zr matrix. © 2003 American Institute of Physics.
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66.10.C- Diffusion and thermal diffusion
66.20.-d Viscosity of liquids; diffusive momentum transport
61.25.Mv Liquid metals and alloys

Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, and Ulrich Gösele

Appl. Phys. Lett. 83, 3897 (2003); http://dx.doi.org/10.1063/1.1625775 (3 pages) | Cited 15 times

Online Publication Date: 3 November 2003

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Self-diffusion of ion-implanted 30Si in SiO2 formed directly on Si substrates by thermal oxidation was studied as a function of the temperature and SiO2 thickness (200, 300, and 650 nm). The diffusion coefficient increases by about an order of magnitude with decreasing SiO2 thickness from 650 to 200 nm when silicon–nitride capping layers are placed on top of the SiO2, i.e., the distance between the 30Si diffusers and Si/SiO2 interface has a strong influence. Because the stress on SiO2 by nitride estimated for such a change in diffusivity is unrealistically large, Si species, most likely SiO, generated at the Si/SiO2 interface and diffusing into SiO2 must be affecting the self-diffusion of Si in SiO2. © 2003 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
81.65.Mq Oxidation
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

Large band gaps in elastic phononic crystals with air inclusions

Yun Lai and Zhao-Qing Zhang

Appl. Phys. Lett. 83, 3900 (2003); http://dx.doi.org/10.1063/1.1625998 (3 pages) | Cited 21 times

Online Publication Date: 3 November 2003

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We find that a large absolute band gap can be created by inserting air inclusions in a two-component elastic phononic crystal with small density contrast and filling fraction. The positions of the insertion are chosen to suppress the shear potential energy of the first optical band and lower their frequencies. This is demonstrated in a two-dimensional system consisting of aluminum cylinders in a triangular lattice with a filling fraction of 0.145 embedded in an epoxy host. Both the band structure and the transmission calculations show that the insertion of air cylinders in the earlier system is capable of creating a large elastic band gap with gap/midgap ratio Δω/ωc = 0.53. Such a system makes the realization of a light and effective sonic insulator possible. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
78.20.-e Optical properties of bulk materials and thin films
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Structural and elastic anisotropy of carbon phases prepared from fullerite C60

A. G. Lyapin, V. V. Mukhamadiarov, V. V. Brazhkin, S. V. Popova, M. V. Kondrin, R. A. Sadykov, E. V. Tat’yanin, S. C. Bayliss, and A. V. Sapelkin

Appl. Phys. Lett. 83, 3903 (2003); http://dx.doi.org/10.1063/1.1625432 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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We show that application of nonhydrostatic pressure to cluster-based molecular material, like fullerite C60, provides an opportunity to create elastically and structurally anisotropic carbon materials, including two-dimensional polymerized rhombohedral C60 and superhard graphite-type (sp2) disordered atomic-based phases. There is direct correlation between textured polymerized and/or textured covalent structure and anisotropic elasticity. Whereas this anisotropy is induced by the uniaxial pressure component, in the case of disordered atomic-based phases, it may be governed by the uniform pressure magnitude. © 2003 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
62.50.-p High-pressure effects in solids and liquids
62.20.D- Elasticity

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Shih-Wei Feng, En-Chiang Lin, Tsung-Yi Tang, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 83, 3906 (2003); http://dx.doi.org/10.1063/1.1625434 (3 pages) | Cited 13 times

Online Publication Date: 3 November 2003

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We compared the optical and material properties of an InGaN thin film with an average indium content at 0.31 between as-grown and postgrowth thermally annealed conditions. The major part of the photoluminescence spectrum was shifted from the original yellow band into the blue range upon thermal annealing. Cathodoluminescence (CL) spectra showed that the spectral shift occurred essentially in a shallow layer of the InGaN film. The deeper layer in the as-grown sample contributed blue emission because it had been thermally annealed during the growth of the shallow layer. The spectral change was attributed to the general trends of cluster size reduction and possibly quantum-confined Stark effect relaxation upon thermal annealing. The attribution was supported by the observations in the CL, x-ray diffraction, and high-resolution transmission electron microscopy results. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence
68.37.Lp Transmission electron microscopy (TEM)
78.55.Cr III-V semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Niobium nanoclusters studied with in situ transmission electron microscopy

T. Vystavel, G. Palasantzas, S. A. Koch, and J. Th. M. De Hosson

Appl. Phys. Lett. 83, 3909 (2003); http://dx.doi.org/10.1063/1.1625789 (3 pages) | Cited 7 times

Online Publication Date: 3 November 2003

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Structural aspects of deposited niobium nanoclusters approximately 10 nm in size have been explored by means of high-resolution transmission electron microscopy. The niobium clusters have a bcc structure and a crystal habit of rhombic dodecahedron. In situ heating up to ∼ 800 °C revealed a resistance to high temperatures, in the sense that the cluster habit is preserved. However, the internal structural order of the clusters is altered due to formation of niobium oxide domains within the clusters. Coalescence does not occur even at the highest temperatures, which is attributed to the presence of facets and the occurrence of oxidation during heat treatment. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.37.Lp Transmission electron microscopy (TEM)

Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

Jens Herfort, Hans-Peter Schönherr, and Klaus H. Ploog

Appl. Phys. Lett. 83, 3912 (2003); http://dx.doi.org/10.1063/1.1625426 (3 pages) | Cited 57 times

Online Publication Date: 3 November 2003

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We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si. © 2003 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.50.Bb Fe and its alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Cr Saturation moments and magnetic susceptibilities

Optical properties of Pb(Zr,Ti)O3 thin films on sapphire prepared by metalorganic decomposition process

Chien-Kang Kao, Chuen-Horng Tsai, and I-Nan Lin

Appl. Phys. Lett. 83, 3915 (2003); http://dx.doi.org/10.1063/1.1625428 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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Pb(Zr0.52Ti0.48)O3 (PZT) thin films were synthesized on a sapphire substrate for application as planar optical waveguide devices using a metalorganic decomposition (MOD) process. Pyrochlore phase, which always forms preferentially when the PZT thin films (∼200 nm) are deposited on a sapphire substrate directly, has been effectively suppressed by using a SrTiO3 (STO) film (∼190 nm) as a buffer layer. The PZT/sapphire thin films have a significantly larger refractive index than the STO/sapphire ones: nPZT = 2.2012 and nSTO = 2.0639 (at 632.8 nm) by prism coupling measurement and nPZT′ = 2.215 and nSTO′ = 2.084 (at 632.8 nm) by optical transmission spectroscopic measurement. The STO layer cannot only serve as buffer layer for enhancing the crystallization kinetics of the subsequently deposited PZT thin films, but can also serve as cladding layer in a ridge-type planar waveguide, which uses PZT thin film as core materials. © 2003 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators
68.55.-a Thin film structure and morphology

Formation of silicides in a cavity applicator microwave system

D. C. Thompson, H. C. Kim, T. L. Alford, and J. W. Mayer

Appl. Phys. Lett. 83, 3918 (2003); http://dx.doi.org/10.1063/1.1625430 (3 pages) | Cited 6 times

Online Publication Date: 3 November 2003

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Metal silicides of nickel and cobalt are formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. X-ray diffraction, Rutherford backscattering spectrometry, and four-point-probe measurements are used to identify the silicide phase present and layer thicknesses. Additional processing confirmed that the products attained from heating by microwaves do not differ appreciably from those attained in heating by thermal processes. Materials properties are used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained and specific products isolated. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
84.40.-x Radiowave and microwave (including millimeter wave) technology
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm

M. Sukhotin, E. R. Brown, D. Driscoll, M. Hanson, and A. C. Gossard

Appl. Phys. Lett. 83, 3921 (2003); http://dx.doi.org/10.1063/1.1622121 (3 pages) | Cited 11 times

Online Publication Date: 3 November 2003

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This letter reports the measurement of photocarrier lifetime in ErAs:InGaAs epitaxial material grown on InP substrates. The measurement technique is ultrafast time-resolved phototransmission using a 1.55 μm mode-locked erbium-doped fiber laser. A lifetime of 3.56 ps is found in a sample containing an InAlAs smoothing layer, compared to 0.96 ps in a sample without any InAlAs. The difference is explained using a model of ambipolar diffusion of photocarriers. © 2003 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Evidence of icosahedral short-range order in Zr70Cu30 and Zr70Cu29Pd1 metallic glasses

K. Saksl, H. Franz, P. Jóvári, K. Klementiev, E. Welter, A. Ehnes, J. Saida, A. Inoue, and J. Z. Jiang

Appl. Phys. Lett. 83, 3924 (2003); http://dx.doi.org/10.1063/1.1626266 (3 pages) | Cited 57 times

Online Publication Date: 3 November 2003

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Change in local atomic environment during crystallization of Zr-based glassy alloys was studied by extended x-ray absorption fine structure (EXAFS) spectroscopy. The formation of icosahedral quasicrystalline phase followed by crystallization of tetragonal CuZr2 has been observed in the Zr70Cu29Pd1 glassy alloy during annealing up to 850 K. On the other hand, the binary Zr70Cu30 alloy shows a single glassy to crystalline CuZr2 phase transformation. The local atomic environment of as-quenched Zr70Cu30 alloy is matched to an icosahedral local atomic configuration, which is similar to that of the as-quenched Zr70Cu29Pd1 alloy and the alloy annealed at 593 K containing icosahedral phase. Considering that the supercooled liquid region appears prior to crystallization in the Zr70Cu30 glassy alloy, the observed results support the theory claiming a strong correlation between the existence of local icosahedral short-range order and stability of the supercooled liquid state. © 2003 American Institute of Physics.
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61.43.Fs Glasses
61.44.Br Quasicrystals
78.70.Dm X-ray absorption spectra
81.40.Gh Other heat and thermomechanical treatments
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Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures

S. Ye, P. J. Klar, Th. Hartmann, W. Heimbrodt, M. Lampalzer, S. Nau, T. Torunski, W. Stolz, T. Kurz, H.-A. Krug von Nidda, and A. Loidl

Appl. Phys. Lett. 83, 3927 (2003); http://dx.doi.org/10.1063/1.1625791 (3 pages) | Cited 16 times

Online Publication Date: 3 November 2003

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We investigated the temperature-dependent magnetoresistance of granular (Ga,Mn)As/MnAs hybrids grown on (100) GaAs in different transport geometries. The observed magnetoresistance effects are much bigger than for a corresponding (Ga,Mn)As reference sample without MnAs nanoclusters. We find that the magnetoresistance effects depend strongly on the chosen transport geometry. When the external field is perpendicular to the sample plane the effects are largest. The smallest effects occur when the external field is in the sample plane and parallel to the current. Furthermore, we have established by ferromagnetic resonance studies that the magnetic properties of the ensemble of ferromagnetic MnAs nanoclusters is similar for the magnetic field orientations studied. Therefore, the observed anisotropy of the magnetoresistance mainly reflects the difference in current path through the sample which leads to a variation of the degree of interaction between the free carriers in the matrix and nanoclusters. © 2003 American Institute of Physics.
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75.47.Pq Other materials
75.75.-c Magnetic properties of nanostructures
75.50.Pp Magnetic semiconductors
75.30.Gw Magnetic anisotropy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Dd Nonmetallic ferromagnetic materials
75.20.Ck Nonmetals
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Tt Fine-particle systems; nanocrystalline materials
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