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Applied Physics Letters / Volume 83 / Issue 19 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 83, 3936 (2003); http://dx.doi.org/10.1063/1.1626264 (3 pages)

Temperature dependence of intersubband transitions in InAs/AlSb quantum wells

D. C. Larrabee1, G. A. Khodaparast1, J. Kono1, K. Ueda2, Y. Nakajima2, M. Nakai2, S. Sasa2, M. Inoue2, K. I. Kolokolov3, J. Li3, and C. Z. Ning3

1Department of Electrical and Computer Engineering, Rice Quantum Institute, and Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005
2New Materials Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan
3Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035

(Received 29 April 2003; accepted 17 September 2003)

We have carried out a systematic temperature-dependent study of intersubband absorption in InAs/AlSb quantum wells from 5 to 10 nm well width. The resonance energy redshifts with increasing temperature from 10 to 300 K, and the amount of redshift increases with decreasing well width. We have modeled the transitions using eight-band k⋅p theory combined with semiconductor Bloch equations, including the main many-body effects. Temperature is incorporated via band filling and nonparabolicity, and good agreement with experiment is achieved for the temperature dependence of the resonance. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

semiconductor quantum wells, III-V semiconductors, indium compounds, aluminium compounds, k.p calculations, red shift

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1626264

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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