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10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
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In situ control of the focused-electron-beam-induced deposition process

T. Bret, I. Utke, A. Bachmann, and P. Hoffmann

Appl. Phys. Lett. 83, 4005 (2003); http://dx.doi.org/10.1063/1.1626261 (3 pages) | Cited 29 times

Online Publication Date: 3 November 2003

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A simple quantitative method for in situ control of the focused-electron-beam-induced deposition process is discussed and demonstrated with precursors used for Au, Cu, Rh, and SiO2 deposition. A picoamperemeter monitors the electron current flowing through the sample, which reproducibly drops at a characteristic rate to a plateau value during deposition. These parameters are correlated to deposit geometry, composition, and precursor supply. Monte Carlo simulations of electron backscattering and secondary electron emission by the growing structures show excellent agreement with the experiment. The method could apply to a wide range of charged-particle deposition and etching processes. © 2003 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.Cf Surface cleaning, etching, patterning
79.20.Kz Other electron-impact emission phenomena
79.20.Hx Electron impact: secondary emission

Imaging the charge transport in arrays of CdSe nanocrystals

M. Drndić, R. Markov, M. V. Jarosz, M. G. Bawendi, M. A. Kastner, N. Markovic, and M. Tinkham

Appl. Phys. Lett. 83, 4008 (2003); http://dx.doi.org/10.1063/1.1626268 (3 pages) | Cited 13 times

Online Publication Date: 3 November 2003

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A method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting extremely high resistances or very small diffusion coefficients. © 2003 American Institute of Physics.
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73.61.Ga II-VI semiconductors
73.63.Bd Nanocrystalline materials
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.46.-w Structure of nanoscale materials

High temperature structural studies of HgS and HgSe quantum dots

Syed B. Qadri, Masaru Kuno, C. R. Feng, B. B. Rath, and M. Yousuf

Appl. Phys. Lett. 83, 4011 (2003); http://dx.doi.org/10.1063/1.1625433 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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We report the structural investigations of β-HgS and HgSe quantum dots as a function of temperature between 300 and 600 K using x-ray diffraction. For both the chalcogenides, the zinc-blende structure remains stable up to 600 K without undergoing any phase transformation. The crystallite size increases as a function of temperature. However, for nanocrystallite ∼5.0 nm, lattice parameters show reduction in comparison to their bulk values. With increase in temperature, the lattice parameter increases and approaches the equilibrium value as the crystallite sizes grow to more than 10.0 nm. We attribute the temperature induced increase in crystallite size primarily to normal grain growth, a phenomenon observed in crystalline solids when the crystallite size undergoes gradual increase as function of time at elevated temperatures with accompanying recrystallization of new crystallite nuclei, and we rule out the possibility of size-dependent melting. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
61.46.-w Structure of nanoscale materials
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
61.05.cp X-ray diffraction

Chemical gating of In2O3 nanowires by organic and biomolecules

Chao Li, Bo Lei, Daihua Zhang, Xiaolei Liu, Song Han, Tao Tang, Mahsa Rouhanizadeh, Tzung Hsiai, and Chongwu Zhou

Appl. Phys. Lett. 83, 4014 (2003); http://dx.doi.org/10.1063/1.1625421 (3 pages) | Cited 29 times

Online Publication Date: 3 November 2003

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In2O3 nanowire transistors were used to investigate the chemical gating effect of organic molecules and biomolecules with amino or nitro groups. The nanowire conductance changed dramatically after adsorption of these molecules. Specifically, amino groups in organic molecules such as butylamine, donated electrons to In2O3 nanowires and thus led to enhanced carrier concentrations and conductance, whereas molecules with nitro groups such as butyl nitrite made In2O3 nanowires less conductive by withdrawing electrons. In addition, intrananowire junctions created by partial exposure of the nanowire device to butyl nitrite were investigated, and pronounced rectifying current–voltage characteristics were obtained. Furthermore, chemical gating by low-density lipoprotein cholesterol, the offending agent in coronary heart diseases, was also observed and attributed to the amino groups carried by the bio species. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
87.85.Qr Nanotechnologies-design
87.85.Rs Nanotechnologies-applications

Electromagnetic wave absorption properties of α-Fe/Fe3B/Y2O3 nanocomposites in gigahertz range

Jiu Rong Liu, Masahiro Itoh, and Ken-ichi Machida

Appl. Phys. Lett. 83, 4017 (2003); http://dx.doi.org/10.1063/1.1623934 (3 pages) | Cited 72 times

Online Publication Date: 3 November 2003

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Nanocomposites α-Fe/Fe3B/Y2O3 were prepared by a melt-spun technique, and the electromagnetic wave absorption properties were measured in the 0.05–20.05 GHz range. Compared with α-Fe/Y2O3 composites, the resonance frequency (fr) of α-Fe/Fe3B/Y2O3 shifted to a higher frequency range due to the large anisotropy field (HA) of tetragonal Fe3B (∼0.4 MA/m). The relative permittivity (ϵr = ϵr′−jϵr″) was constantly low over the 0.5–10 GHz region, which indicates that the composite powders have a high resistivity (ρ = ∼ 100 Ω m). The effective electromagnetic wave absorption (reflection loss <−20 dB) was obtained in a frequency range of 2.7–6.5 GHz on resin composites of 80 wt % α-Fe/Fe3B/Y2O3 powders, with thickness of 6–3 mm, respectively. A minimum reflection loss of −33 dB was observed at 4.5 GHz with an absorber thickness of 4 mm. © 2003 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
81.07.Wx Nanopowders
72.80.Tm Composite materials
77.22.Ch Permittivity (dielectric function)
41.20.Jb Electromagnetic wave propagation; radiowave propagation
73.63.Bd Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Synthesis, optical, and magnetic properties of diluted magnetic semiconductor Zn1−xMnxO nanowires via vapor phase growth

Y. Q. Chang, D. B. Wang, X. H. Luo, X. Y. Xu, X. H. Chen, L. Li, C. P. Chen, R. M. Wang, J. Xu, and D. P. Yu

Appl. Phys. Lett. 83, 4020 (2003); http://dx.doi.org/10.1063/1.1625788 (3 pages) | Cited 96 times

Online Publication Date: 3 November 2003

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Diluted magnetic semiconductor Zn1−xMnxO nanowires were synthesized via an in situ doping of manganese in ZnO nanowires using vapor phase growth at 500 °C. The maximum content of the manganese in the ZnO is around 13 at. %, approaching the maximum thermal equilibrium limit of Mn solubility in ZnO at the growth temperature. Structure and composition analysis revealed that the manganese was doped into the lattice structure, forming solid solution instead of precipitation. Magnetic property measurements revealed that the as-doped Zn1−xMnxO nanowires exhibit ferromagnetic behavior with Curie temperature around 37 K. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
75.50.Pp Magnetic semiconductors
75.50.Tt Fine-particle systems; nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.16.Be Chemical synthesis methods
64.75.-g Phase equilibria
68.37.Lp Transmission electron microscopy (TEM)
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
78.30.Fs III-V and II-VI semiconductors

Characterization of isomers in aluminum tris(quinoline-8-olate) by one-dimensional 27Al nuclear magnetic resonance under magic-angle spinning

Marcel Utz, Magesh Nandagopal, Mathew Mathai, and Fotios Papadimitrakopoulos

Appl. Phys. Lett. 83, 4023 (2003); http://dx.doi.org/10.1063/1.1623945 (3 pages) | Cited 17 times

Online Publication Date: 3 November 2003

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Solid-state 27Al NMR spectra under magic-angle spinning of different forms of aluminum tris(quinoline-8-olate) (Alq3) are presented. Alq3 is an organometallic complex of great importance in the context of organic light-emitting diodes. Our results demonstrate a strong difference in the asymmetry of the electric field gradient (EFG) tensor at the aluminum site between the α and the recently discovered δ polymorph of Alq3. While the EFG is nearly planar (η≈1) in the α phase, it is nearly axially symmetric (η≈0) for the δ phase. This result provides strong support to the hypothesis that the δ phase contains the facial isomer of Alq3. While the spectra of both the α and the δ polymorphs exhibit sharp features, highly disordered forms of Alq3 obtained from rapid vapor deposition onto a cold substrate, yield broadened spectra, indicating substantial structural disorder in the local geometry of different Alq3 molecules. © 2003 American Institute of Physics.
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76.60.-k Nuclear magnetic resonance and relaxation
61.66.Hq Organic compounds
71.70.Ch Crystal and ligand fields
71.70.Jp Nuclear states and interactions

Nerve agent detection using networks of single-walled carbon nanotubes

J. P. Novak, E. S. Snow, E. J. Houser, D. Park, J. L. Stepnowski, and R. A. McGill

Appl. Phys. Lett. 83, 4026 (2003); http://dx.doi.org/10.1063/1.1626265 (3 pages) | Cited 138 times

Online Publication Date: 3 November 2003

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We report the use of carbon nanotubes as a sensor for chemical nerve agents. Thin-film transistors constructed from random networks of single-walled carbon nanotubes were used to detect dimethyl methylphosphonate (DMMP), a simulant for the nerve agent sarin. These sensors are reversible and capable of detecting DMMP at sub-ppb concentration levels, and they are intrinsically selective against interferent signals from hydrocarbon vapors and humidity. We provide additional chemical specificity by the use of filters coated with chemoselective polymer films. These results indicate that the electronic detection of sub-ppb concentrations of nerve agents and potentially other chemical warfare agents is possible with simple-to-fabricate carbon nanotube devices. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Kt Nanotube devices
73.63.Fg Nanotubes
85.30.Tv Field effect devices
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Demonstration of planar tunneling through solid inert gas barriers

L. L. A. Adams, Cathryn Christiansen, and A. M. Goldman

Appl. Phys. Lett. 83, 4029 (2003); http://dx.doi.org/10.1063/1.1625773 (3 pages)

Online Publication Date: 3 November 2003

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Metal–insulator–metal junctions were fabricated with insulating barriers of solid Xe. The current–voltage characteristics of these junctions when unshorted were consistent with tunneling theory. The fabrication of junctions with solid inert gas solid insulating barriers may make it possible to carry out tunneling spectroscopy of complex compounds that are susceptible to chemical and mechanical damage. © 2003 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnO

Y. R. Ryu, T. S. Lee, J. H. Leem, and H. W. White

Appl. Phys. Lett. 83, 4032 (2003); http://dx.doi.org/10.1063/1.1625787 (3 pages) | Cited 80 times

Online Publication Date: 3 November 2003

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We report fabrication of homostructural ZnO p–n junctions that contain arsenic (As)-doped ZnO (ZnO:As) and intrinsic n-type ZnO layers. We also describe the metallization process for forming ohmic contacts to p-type ZnO. ZnO films were synthesized on n-type SiC substrates by hybrid beam deposition. Ni/Au metal contacts show linear I–V characteristics indicative of ohmic behavior, while other metal contacts (e.g., In/Au and Ti/Au) show nonlinear characteristics with rectification that reveal the presence of Schottky barriers. The characteristics for p–n junctions composed of ZnO layers are confirmed by I–V measurements. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification

Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers

P. Pohl, F. H. Renner, M. Eckardt, A. Schwanhäußer, A. Friedrich, Ö. Yüksekdag, S. Malzer, G. H. Döhler, P. Kiesel, D. Driscoll, M. Hanson, and A. C. Gossard

Appl. Phys. Lett. 83, 4035 (2003); http://dx.doi.org/10.1063/1.1625108 (3 pages) | Cited 18 times

Online Publication Date: 3 November 2003

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We report electrical conductivity studies of highly-doped GaAs pn diodes containing a strongly n-doped low-temperature-grown (LT)–GaAs layer and pn junctions containing an approximately one monolayer thick ErAs layer. At room temperature, current densities of 1 kA/cm2 for the n-LT–GaAs samples and 6 kA/cm2 for the ErAs samples at 1 V forward bias have been measured. The I–V characteristics under forward bias for the n-LT–GaAs and ErAs samples exhibit significantly different behavior. At low temperatures, the n-LT–GaAs samples reveal a shoulder in the I–V characteristics, which can be explained by a model taking into account tunneling of carriers into LT midgap states. A similar model was able to explain the current transport in the ErAs diodes as tunneling of carriers into metallic regions inside the pn junction. © 2003 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electron drift velocity in AlGaN/GaN channel at high electric fields

L. Ardaravičius, A. Matulionis, J. Liberis, O. Kiprijanovic, M. Ramonas, L. F. Eastman, J. R. Shealy, and A. Vertiatchikh

Appl. Phys. Lett. 83, 4038 (2003); http://dx.doi.org/10.1063/1.1626258 (3 pages) | Cited 33 times

Online Publication Date: 3 November 2003

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Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. No velocity saturation is reached at fields up to 130 kV/cm, when the effect of Joule heating is minimized through application of nanosecond pulses of voltage. The estimated drift velocity is near 2×107 cm/s at 130 kV/cm. Monte Carlo simulation of the drift velocity is carried out with and without effects of channel self-heating for a many-subband model, with hot phonons and electron gas degeneracy taken into account. © 2003 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance

Efficient red organic light-emitting devices based on a europium complex

Junfeng Fang and Dongge Ma

Appl. Phys. Lett. 83, 4041 (2003); http://dx.doi.org/10.1063/1.1626022 (3 pages) | Cited 40 times

Online Publication Date: 3 November 2003

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An efficient organic light-emitting device using a trivalent europium (Eu) complex Eu(Tmphen)(TTA)3 (TTA = thenoyltrifluoroacetone, Tmphen = 3,4,7,8-tetramethyl-1,10-phenanthroline) as the dopant emitter was fabricated. The devices were a multilayer structure of indium tin oxide/N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (40 nm)/ Eu complex:4,4-N,N-dicarbazole-biphenyl (1%, 30 nm)/2,9-dimethyl,4,7-diphenyl-1,10phenanthroline (20 nm)/AlQ (30 nm)/LiF (1 nm)/Al (100 nm). A pure red light with a peak of 612 nm and a half bandwidth of 3 nm, which is the characteristic emission of trivalent europium ion, was observed. The devices show the maximum luminance up to 800 cd/m2, an external quantum efficiency of 4.3%, current efficiency of 4.7 cd/A, and power efficiency of 1.6 lm/W. At the brightness of 100 cd/m2, the quantum efficiency reaches 2.2% (2.3 cd/A). © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds

All-organic thin-film transistors patterned by means of selective electropolymerization

E. Becker, R. Parashkov, G. Ginev, D. Schneider, S. Hartmann, F. Brunetti, T. Dobbertin, D. Metzdorf, T. Riedl, H.-H. Johannes, and W. Kowalsky

Appl. Phys. Lett. 83, 4044 (2003); http://dx.doi.org/10.1063/1.1623951 (3 pages) | Cited 22 times

Online Publication Date: 3 November 2003

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We have fabricated fully patterned all-organic thin-film transistors on polyimide substrates using selectively electropolymerized poly (3,4-ethylenedioxythiophene) doped with poly (styrene sulfonate) (PEDOT:PSS) for the source and drain contacts, PEDOT:PSS Baytron P dispersion for the gate electrodes, poly (4-vinyl phenol) or polyvinyl alcohol for the gate dielectric layers, and pentacene or poly (3-butylthiophene) for the organic active layers. We have built top-gate structures with gates printed on top of the gate dielectric layer. Carrier mobilities as large as 0.01 cm2/V s were measured. Functional all-organic transistors have been realized using a simple and potentially inexpensive technology that does not depend on photolithographical processes and that allows the preparation of feature sizes on the micrometer scale. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
82.35.Cd Conducting polymers
82.45.Aa Electrochemical synthesis
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Noncontact density measurements of tantalum and rhenium in the liquid and undercooled states

Paul-François Paradis, Takehiko Ishikawa, and Shinichi Yoda

Appl. Phys. Lett. 83, 4047 (2003); http://dx.doi.org/10.1063/1.1624475 (3 pages) | Cited 17 times

Online Publication Date: 3 November 2003

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Electrostatic levitation together with multibeam heating and ultraviolet imaging overcame contamination, imaging, and sample position stability problems associated with handling of liquid tantalum and rhenium. Here, the density [ρ(T)] of these metals is reported in the superheated and undercooled states. Over the 2760–3580 K interval, the density of tantalum was measured as ρ(T) = 1.50×104−0.41(T−Tm) kg m−3, where the melting temperature Tm, was 3290 K. For rhenium, the density was determined (2700–3810 K) as ρ(T) = 1.84×104−0.91(T−Tm), with Tm = 3453 K. From these data, respective volume expansion coefficients of 2.7×10−5 and 4.9×10−5 K−1 were calculated. At Tm, the data agree well with the literature values. © 2003 American Institute of Physics.
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61.25.Mv Liquid metals and alloys
64.70.D- Solid-liquid transitions
65.20.-w Thermal properties of liquids

High-brightness, narrowband, and compact soft x-ray Cherenkov sources in the water window

W. Knulst, M. J. van der Wiel, O. J. Luiten, and J. Verhoeven

Appl. Phys. Lett. 83, 4050 (2003); http://dx.doi.org/10.1063/1.1625999 (3 pages) | Cited 9 times

Online Publication Date: 3 November 2003

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Narrowband, soft x-ray Cherenkov radiation at energies of 453 and 512 eV has been generated by 10 MeV electrons in, respectively, titanium and vanadium foils. The measured spectral and angular distribution of the radiation, and the measured total yield ( ≈ 10−4 photon per electron) are in agreement with theoretical predictions based on refractive index data. We show that the brightness that can be achieved using a small electron accelerator is sufficient for practical x-ray microscopy in the water-window spectral region. © 2003 American Institute of Physics.
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07.85.-m X- and γ-ray instruments
41.60.Bq Cherenkov radiation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Dispersive properties of cylindrical Rayleigh waves

Xianmei Wu, Menglu Qian, and John H. Cantrell

Appl. Phys. Lett. 83, 4053 (2003); http://dx.doi.org/10.1063/1.1624466 (3 pages) | Cited 6 times

Online Publication Date: 3 November 2003

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An analytical model of cylindrical Rayleigh waves generated by a laser source is developed that predicts a previously unknown maximum in the Rayleigh wave velocity. The maximum value CR max of the cylindrical Rayleigh wave velocity CR occurs at a critical small value of ωR/CR where ω is the angular frequency and R is the radius of the cylinder. CR max is smaller in magnitude than the longitudinal velocity but larger than the shear velocity in the material. Experimental data, generated by a cylindrically focused laser source, confirm the theoretical predictions for aluminum cylinders. © 2003 American Institute of Physics.
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68.35.Iv Acoustical properties
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

A micro methanol fuel cell operating at near room temperature

T. J. Yen, N. Fang, X. Zhang, G. Q. Lu, and C. Y. Wang

Appl. Phys. Lett. 83, 4056 (2003); http://dx.doi.org/10.1063/1.1625429 (3 pages) | Cited 69 times

Online Publication Date: 3 November 2003

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We present a bipolar micro direct methanol fuel cell (μDMFC) with high-power density and simple device structure. A proton exchange membrane-electrode assembly was integrated in a Si-based μDMFC with micro channels 750 μm wide and 400 μm deep, fabricated using silicon micromachining. The μDMFC has been characterized at near room temperature, showing a maximum power density of 47.2 mW/cm2 when 1 M methanol was fed at 60 °C. The cell voltage dependence on the current density agrees well with the modified Tafel model, in which regimes of kinetic polarization and ohmic polarization are observed without significant presence of the concentration polarization. © 2003 American Institute of Physics.
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82.47.Gh Proton exchange membrane (PEM) fuel cells

Small angle x-ray scattering for sub-100 nm pattern characterization

Ronald L. Jones, Tengjiao Hu, Eric K. Lin, Wen-Li Wu, Rainer Kolb, Diego M. Casa, Patrick J. Bolton, and George G. Barclay

Appl. Phys. Lett. 83, 4059 (2003); http://dx.doi.org/10.1063/1.1622793 (3 pages) | Cited 26 times

Online Publication Date: 3 November 2003

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Characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using small angle x-ray scattering. The transmission scattering geometry employed potentially enables high throughput measurements for future technology nodes of the semiconductor industry, organic and inorganic nanoscale devices, and three-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings using a synchrotron x-ray source. Quantities, such as periodicity and line width, are extracted using minimal modeling. Additional quantities and the potential of a laboratory-based x-ray system are briefly discussed. © 2003 American Institute of Physics.
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61.05.cf X-ray scattering (including small-angle scattering)
78.70.Ck X-ray scattering
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
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Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]

W. K. Metzger, M. W. Wanlass, R. J. Ellingson, R. K. Ahrenkiel, and J. J. Carapella

Appl. Phys. Lett. 83, 4062 (2003); http://dx.doi.org/10.1063/1.1625436 (1 page)

Online Publication Date: 3 November 2003

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Abstract Unavailable
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99.10.Cd Errata
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
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