APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Demonstration of planar tunneling through solid inert gas barriers

L. L. A. Adams, Cathryn Christiansen, and A. M. Goldman

Appl. Phys. Lett. 83, 4029 (2003); http://dx.doi.org/10.1063/1.1625773 (3 pages)

Online Publication Date: 3 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal–insulator–metal junctions were fabricated with insulating barriers of solid Xe. The current–voltage characteristics of these junctions when unshorted were consistent with tunneling theory. The fabrication of junctions with solid inert gas solid insulating barriers may make it possible to carry out tunneling spectroscopy of complex compounds that are susceptible to chemical and mechanical damage. © 2003 American Institute of Physics.
Show PACS
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnO

Y. R. Ryu, T. S. Lee, J. H. Leem, and H. W. White

Appl. Phys. Lett. 83, 4032 (2003); http://dx.doi.org/10.1063/1.1625787 (3 pages) | Cited 80 times

Online Publication Date: 3 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report fabrication of homostructural ZnO p–n junctions that contain arsenic (As)-doped ZnO (ZnO:As) and intrinsic n-type ZnO layers. We also describe the metallization process for forming ohmic contacts to p-type ZnO. ZnO films were synthesized on n-type SiC substrates by hybrid beam deposition. Ni/Au metal contacts show linear I–V characteristics indicative of ohmic behavior, while other metal contacts (e.g., In/Au and Ti/Au) show nonlinear characteristics with rectification that reveal the presence of Schottky barriers. The characteristics for p–n junctions composed of ZnO layers are confirmed by I–V measurements. © 2003 American Institute of Physics.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification

Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers

P. Pohl, F. H. Renner, M. Eckardt, A. Schwanhäußer, A. Friedrich, Ö. Yüksekdag, S. Malzer, G. H. Döhler, P. Kiesel, D. Driscoll, M. Hanson, and A. C. Gossard

Appl. Phys. Lett. 83, 4035 (2003); http://dx.doi.org/10.1063/1.1625108 (3 pages) | Cited 18 times

Online Publication Date: 3 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report electrical conductivity studies of highly-doped GaAs pn diodes containing a strongly n-doped low-temperature-grown (LT)–GaAs layer and pn junctions containing an approximately one monolayer thick ErAs layer. At room temperature, current densities of 1 kA/cm2 for the n-LT–GaAs samples and 6 kA/cm2 for the ErAs samples at 1 V forward bias have been measured. The I–V characteristics under forward bias for the n-LT–GaAs and ErAs samples exhibit significantly different behavior. At low temperatures, the n-LT–GaAs samples reveal a shoulder in the I–V characteristics, which can be explained by a model taking into account tunneling of carriers into LT midgap states. A similar model was able to explain the current transport in the ErAs diodes as tunneling of carriers into metallic regions inside the pn junction. © 2003 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electron drift velocity in AlGaN/GaN channel at high electric fields

L. Ardaravičius, A. Matulionis, J. Liberis, O. Kiprijanovic, M. Ramonas, L. F. Eastman, J. R. Shealy, and A. Vertiatchikh

Appl. Phys. Lett. 83, 4038 (2003); http://dx.doi.org/10.1063/1.1626258 (3 pages) | Cited 33 times

Online Publication Date: 3 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. No velocity saturation is reached at fields up to 130 kV/cm, when the effect of Joule heating is minimized through application of nanosecond pulses of voltage. The estimated drift velocity is near 2×107 cm/s at 130 kV/cm. Monte Carlo simulation of the drift velocity is carried out with and without effects of channel self-heating for a many-subband model, with hot phonons and electron gas degeneracy taken into account. © 2003 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance

Efficient red organic light-emitting devices based on a europium complex

Junfeng Fang and Dongge Ma

Appl. Phys. Lett. 83, 4041 (2003); http://dx.doi.org/10.1063/1.1626022 (3 pages) | Cited 40 times

Online Publication Date: 3 November 2003

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
An efficient organic light-emitting device using a trivalent europium (Eu) complex Eu(Tmphen)(TTA)3 (TTA = thenoyltrifluoroacetone, Tmphen = 3,4,7,8-tetramethyl-1,10-phenanthroline) as the dopant emitter was fabricated. The devices were a multilayer structure of indium tin oxide/N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (40 nm)/ Eu complex:4,4-N,N-dicarbazole-biphenyl (1%, 30 nm)/2,9-dimethyl,4,7-diphenyl-1,10phenanthroline (20 nm)/AlQ (30 nm)/LiF (1 nm)/Al (100 nm). A pure red light with a peak of 612 nm and a half bandwidth of 3 nm, which is the characteristic emission of trivalent europium ion, was observed. The devices show the maximum luminance up to 800 cd/m2, an external quantum efficiency of 4.3%, current efficiency of 4.7 cd/A, and power efficiency of 1.6 lm/W. At the brightness of 100 cd/m2, the quantum efficiency reaches 2.2% (2.3 cd/A). © 2003 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds

All-organic thin-film transistors patterned by means of selective electropolymerization

E. Becker, R. Parashkov, G. Ginev, D. Schneider, S. Hartmann, F. Brunetti, T. Dobbertin, D. Metzdorf, T. Riedl, H.-H. Johannes, and W. Kowalsky

Appl. Phys. Lett. 83, 4044 (2003); http://dx.doi.org/10.1063/1.1623951 (3 pages) | Cited 22 times

Online Publication Date: 3 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have fabricated fully patterned all-organic thin-film transistors on polyimide substrates using selectively electropolymerized poly (3,4-ethylenedioxythiophene) doped with poly (styrene sulfonate) (PEDOT:PSS) for the source and drain contacts, PEDOT:PSS Baytron P dispersion for the gate electrodes, poly (4-vinyl phenol) or polyvinyl alcohol for the gate dielectric layers, and pentacene or poly (3-butylthiophene) for the organic active layers. We have built top-gate structures with gates printed on top of the gate dielectric layer. Carrier mobilities as large as 0.01 cm2/V s were measured. Functional all-organic transistors have been realized using a simple and potentially inexpensive technology that does not depend on photolithographical processes and that allows the preparation of feature sizes on the micrometer scale. © 2003 American Institute of Physics.
Show PACS
85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
82.35.Cd Conducting polymers
82.45.Aa Electrochemical synthesis
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close