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10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
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Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor

Sang-Mo Koo, Sergey Khartsev, Carl-Mikael Zetterling, Alex Grishin, and Mikael Östling

Appl. Phys. Lett. 83, 3975 (2003); http://dx.doi.org/10.1063/1.1625425 (3 pages) | Cited 10 times

Online Publication Date: 3 November 2003

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Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr0.52Ti0.48)O3/Al2O3 gate stack on n-type epitaxial channel layer and p-type substrate of 4H-SiC. A memory window, as wide as 5 V, has been observed in the drain current and the ferroelectric gate voltage transfer characteristics. The transistor showed memory effect from room temperature up to 200 °C, whereas stable transistor operation was observed up to 300 °C. The retention of remnant polarization was preserved after 2×104 s at 150 °C with no bias on the gate. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Locking of electric-field-induced non-180° domain switching and phase transition in ferroelectric materials upon cyclic electric fatigue

Ming Liu and K. Jimmy Hsia

Appl. Phys. Lett. 83, 3978 (2003); http://dx.doi.org/10.1063/1.1626262 (3 pages) | Cited 19 times

Online Publication Date: 3 November 2003

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In situ x-ray diffraction measurements are conducted on a polycrystalline ferroelectric material lead-zironate-titanate-5H at different levels of static electric field. The locking of electric-field-induced non-180° domain switching and phase transition after experiencing cyclic electric field is investigated by examining the changes in pseudocubic diffraction profiles. The results show that cyclic electric field with an amplitude lower than the coercive field has little effect on ferroelectric fatigue of the material, whereas cyclic field with an amplitude above the coercive field results in nearly complete locking of non-180° domain switching and phase transition. The results also demonstrate that the locking occurs rather suddenly after 103–104 cycles. This locking phenomenon can explain the dramatic change in piezoelectric coefficients in these materials upon cyclic electric field. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.80.B- Phase transitions and Curie point
77.65.Bn Piezoelectric and electrostrictive constants

Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition

Kwi Young Yun, Minoru Noda, and Masanori Okuyama

Appl. Phys. Lett. 83, 3981 (2003); http://dx.doi.org/10.1063/1.1626267 (3 pages) | Cited 95 times

Online Publication Date: 3 November 2003

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Ferroelectric BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/Si substrates in various oxygen pressures of 0.001–0.1 Torr at a temperature as low as 450 °C by pulsed-laser deposition. The crystallinity of the films was studied by x-ray diffraction. X-ray photoelectron spectroscopy showed that the films have a single phase of perovskite BiFeO3. The BiFeO3 thin films deposited at 0.01–0.1 Torr show good current-density–applied-voltage characteristics. It is obtained from polarization–electric-field characterization that 2Pr is about 71.3 μC/cm2 and 2Ec is 125 kV/cm. Stable current density and saturated ferroelectric hysteresis loop have been observed in BiFeO3 thin films. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
79.60.Dp Adsorbed layers and thin films
77.22.Ej Polarization and depolarization

Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

G. D. Wilk and D. A. Muller

Appl. Phys. Lett. 83, 3984 (2003); http://dx.doi.org/10.1063/1.1626019 (3 pages) | Cited 65 times

Online Publication Date: 3 November 2003

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Atomic-scale electron spectroscopy is used to determine the local electronic structure of atomic-layer-deposited HfO2 gate dielectrics as a function of annealing conditions. Oxygen core-loss spectra from monoclinic crystallites exhibit a more strongly pronounced crystal-field splitting with increasing anneal temperature up to 1000 °C, consistent with a decrease in point defects. Concomitantly, electrical measurements of the same structures show a correlated reduction of fixed charge. An unintentional ∼5 Å SiO2 layer is observed at the top interface, between the HfO2 and poly-Si electrode. No Hf–silicate intermixing is detected at either interface on a scale down to 2 Å. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
61.72.Cc Kinetics of defect formation and annealing
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Uv Electron energy loss spectroscopy
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
71.70.Ch Crystal and ligand fields
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