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10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
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Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures

S. Ye, P. J. Klar, Th. Hartmann, W. Heimbrodt, M. Lampalzer, S. Nau, T. Torunski, W. Stolz, T. Kurz, H.-A. Krug von Nidda, and A. Loidl

Appl. Phys. Lett. 83, 3927 (2003); http://dx.doi.org/10.1063/1.1625791 (3 pages) | Cited 16 times

Online Publication Date: 3 November 2003

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We investigated the temperature-dependent magnetoresistance of granular (Ga,Mn)As/MnAs hybrids grown on (100) GaAs in different transport geometries. The observed magnetoresistance effects are much bigger than for a corresponding (Ga,Mn)As reference sample without MnAs nanoclusters. We find that the magnetoresistance effects depend strongly on the chosen transport geometry. When the external field is perpendicular to the sample plane the effects are largest. The smallest effects occur when the external field is in the sample plane and parallel to the current. Furthermore, we have established by ferromagnetic resonance studies that the magnetic properties of the ensemble of ferromagnetic MnAs nanoclusters is similar for the magnetic field orientations studied. Therefore, the observed anisotropy of the magnetoresistance mainly reflects the difference in current path through the sample which leads to a variation of the degree of interaction between the free carriers in the matrix and nanoclusters. © 2003 American Institute of Physics.
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75.47.Pq Other materials
75.75.-c Magnetic properties of nanostructures
75.50.Pp Magnetic semiconductors
75.30.Gw Magnetic anisotropy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Dd Nonmetallic ferromagnetic materials
75.20.Ck Nonmetals
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Tt Fine-particle systems; nanocrystalline materials

Charge transfer and doping at organic/organic interfaces

H. Peisert, M. Knupfer, F. Zhang, A. Petr, L. Dunsch, and J. Fink

Appl. Phys. Lett. 83, 3930 (2003); http://dx.doi.org/10.1063/1.1622783 (3 pages) | Cited 30 times

Online Publication Date: 3 November 2003

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We studied the electronic properties of technically relevant organic/organic interfaces using photoemission spectroscopy. Representatives of organic semiconductors from the family of the phthalocyanines were evaporated onto PEDOT:PSS [mixture of poly-3,4-ethylenedioxy-thiophene and polystyrenesulfonate] thin films, which are often applied as electrode material in organic semiconductor devices. Besides the formation of interface dipoles we observe energetic shifts of the electronic levels of the semiconductors, which are explained by a doping of the organic semiconductor near the interface due to a mixing of the two organic materials within the interface region. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Rv Polymers and organic compounds
61.72.up Other materials
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures

High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides

Joshua J. Robbins and Colin A. Wolden

Appl. Phys. Lett. 83, 3933 (2003); http://dx.doi.org/10.1063/1.1625435 (3 pages) | Cited 7 times

Online Publication Date: 3 November 2003

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After a decade of intensive materials discovery and optimization, no single transparent conducting oxide has exceeded the intrinsic electrical performance limits suggested in 1992. High mobility oxide (HMO) structures are proposed as an alternative design that can surpass single material performance. Based on oxides with different electron affinities, direct simulations indicate that HMOs could obtain conductivity values >4.2×104 S/cm. The conductivity is very sensitive to the quantum well thickness, and the individual layers must be <5 nm thick in order for HMO structures to surpass the intrinsic limits of a single material. Thus, a high degree of control over crystal structure and interface quality would be required to realize these performance levels. © 2003 American Institute of Physics.
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73.63.Hs Quantum wells
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Le Other inorganic semiconductors
73.21.Fg Quantum wells
73.61.Ga II-VI semiconductors

Temperature dependence of intersubband transitions in InAs/AlSb quantum wells

D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, K. I. Kolokolov, J. Li, and C. Z. Ning

Appl. Phys. Lett. 83, 3936 (2003); http://dx.doi.org/10.1063/1.1626264 (3 pages) | Cited 17 times

Online Publication Date: 3 November 2003

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We have carried out a systematic temperature-dependent study of intersubband absorption in InAs/AlSb quantum wells from 5 to 10 nm well width. The resonance energy redshifts with increasing temperature from 10 to 300 K, and the amount of redshift increases with decreasing well width. We have modeled the transitions using eight-band k⋅p theory combined with semiconductor Bloch equations, including the main many-body effects. Temperature is incorporated via band filling and nonparabolicity, and good agreement with experiment is achieved for the temperature dependence of the resonance. © 2003 American Institute of Physics.
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78.67.De Quantum wells

Electric characteristics of poly(3-hexylthiophene) organic field-effect transistors fabricated on O2 plasma-treated substrates

Yong Suk Yang, Seong Hyun Kim, Sang Chul Lim, Jeong-Ik Lee, Jung Hun Lee, Lee-Mi Do, and Taehyoung Zyung

Appl. Phys. Lett. 83, 3939 (2003); http://dx.doi.org/10.1063/1.1626002 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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Soluble conjugated polymers such as poly(3-hexylthiophene) (P3HT) are very promising candidates for a cheap electronic device on various substrates. In this study we report the effects of O2 plasma treatment of the substrates on the electrical properties of P3HT organic thin-film transistors and metal/insulator/organic semiconductor capacitors. Based on the results of a capacitance–voltage measurement, the effective charge density in the interface between P3HT and SiO2 layer treated by O2 plasma for 30 s was approximately −18.3 nC/cm2. When the period of O2 plasma treatment was longer than 30 s, the field-effect mobility decreased since the amount of charge and the relaxation time constant of interface traps increased. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
52.77.Bn Etching and cleaning
73.50.Dn Low-field transport and mobility; piezoresistance

Isolated double quantum dot capacitively coupled to a single quantum dot single-electron transistor in silicon

Emir G. Emiroglu, David G. Hasko, and David A. Williams

Appl. Phys. Lett. 83, 3942 (2003); http://dx.doi.org/10.1063/1.1626017 (3 pages) | Cited 20 times

Online Publication Date: 3 November 2003

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We report electron transport measurements on a single-island single-electron transistor capacitively coupled to an isolated double quantum dot at 4.2 K. The structure is fabricated through trench isolation in silicon-on-insulator. We detect single-electron polarization of the isolated double quantum dot using the single-electron transistor as a sensitive electrometer, and estimate its charging energy. We observe a large suppression of current and modulation of Coulomb blockade peak heights as a function of applied gate voltages. © 2003 American Institute of Physics.
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85.35.Gv Single electron devices
73.63.Kv Quantum dots
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Ds Quantum interference devices
73.61.Cw Elemental semiconductors

Carbon-based printed contacts for organic thin-film transistors

Erik J. Brandon, William West, and Emily Wesseling

Appl. Phys. Lett. 83, 3945 (2003); http://dx.doi.org/10.1063/1.1625794 (3 pages) | Cited 7 times

Online Publication Date: 3 November 2003

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Organic thin-film transistors (OTFTs) employing a flexible, conductive carbon particle-polymer composite material for the drain-source ohmic contacts are reported herein. The contacts can be deposited using standard stencil printing techniques and are processed at low temperature, thereby facilitating their integration with heat sensitive substrates. The carbon contacts were stencil printed on a silicon dioxide gate dielectric layer, and the poly(3-hexylthiophene) semiconductor was deposited via solution casting from toluene. The OTFTs exhibited field-effect behavior over a range of drain-source and gate voltages, similar to devices employing deposited gold contacts. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds
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