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10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
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Room-temperature soldering with nanostructured foils

J. Wang, E. Besnoin, A. Duckham, S. J. Spey, M. E. Reiss, O. M. Knio, M. Powers, M. Whitener, and T. P. Weihs

Appl. Phys. Lett. 83, 3987 (2003); http://dx.doi.org/10.1063/1.1623943 (3 pages) | Cited 44 times

Online Publication Date: 3 November 2003

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Self-propagating formation reactions in nanostructured multilayer foils provide rapid bursts of heat and can act as local heat sources to melt solder layers and join materials. This letter describes the room-temperature soldering of stainless steel specimens using freestanding, nanostructured Al/Ni foils. The products, heats, and velocities of the reactions are described, and the microstructure and the mechanical properties of the resulting joints are characterized. A tensile shear strength of 48 MPa was measured for the reactive foil joints, compared to 38 MPa for conventional joints. Both numerical predictions and infrared measurements show limited heat exposure to the components during reactive joining. © 2003 American Institute of Physics.
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81.20.Vj Joining; welding
68.65.Ac Multilayers
82.60.Cx Enthalpies of combustion, reaction, and formation

Far-infrared absorption in GaAs:Te liquid phase epitaxial films

B. L. Cardozo, E. E. Haller, L. A. Reichertz, and J. W. Beeman

Appl. Phys. Lett. 83, 3990 (2003); http://dx.doi.org/10.1063/1.1624491 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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The far-infrared absorption spectrum of n-type GaAs is of interest for applications such as GaAs photoconductors and blocked impurity band detectors. The linear optical absorption coefficients α for three n-type GaAs films of varying doping concentrations have been measured in the range of 10 to 100 cm−1 using Fourier transform infrared spectrometry. These results show α having maximum values of between 46 cm−1 at 1×1015 cm−3 and approximately 800 cm−1 at 2.1×1016 cm−3. The formation and widening of a donor impurity band with increasing impurity concentration is clearly demonstrated. © 2003 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Efficient third-harmonic generation in a thin nanocrystalline film of ZnO

G. I. Petrov, V. Shcheslavskiy, V. V. Yakovlev, I. Ozerov, E. Chelnokov, and W. Marine

Appl. Phys. Lett. 83, 3993 (2003); http://dx.doi.org/10.1063/1.1623948 (3 pages) | Cited 29 times

Online Publication Date: 3 November 2003

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Nonlinear optical conversion is studied in thin films of wide-bandgap materials. Very high conversion efficiency to the third-harmonic radiation is achieved for an unamplified femtosecond Cr4+:forsterite laser in a submicron-thick film of a nanocrystalline ZnO pulsed-laser-deposited on a fused silica substrate. © 2003 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Hf II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
81.15.Fg Pulsed laser ablation deposition
81.16.Mk Laser-assisted deposition

Remote identification of protrusions and dents on surfaces by terahertz reflectometry with spatial beam filtering and out-of-focus detection

Noboru Hasegawa, Torsten Löffler, Mark Thomson, and Hartmut G. Roskos

Appl. Phys. Lett. 83, 3996 (2003); http://dx.doi.org/10.1063/1.1623949 (3 pages) | Cited 10 times

Online Publication Date: 3 November 2003

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We propose two terahertz reflectometry modalities that are optimized to be sensitive to the curvature of surface features. The first is a dark-field technique that allows the detection of protrusions and dents on surfaces with high sensitivity. It cannot distinguish, however, between convex and concave shapes. This becomes possible with the second technique, which combines out-of-focus imaging with suitable beam filtering. Both methods may be of interest for surface inspection in fabrication environments; for example, for online monitoring during metal processing. © 2003 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
81.70.-q Methods of materials testing and analysis

SiO2-sheathed InS nanowires and SiO2 nanotubes

Y. B. Li, Y. Bando, D. Golberg, and Y. Uemura

Appl. Phys. Lett. 83, 3999 (2003); http://dx.doi.org/10.1063/1.1626259 (3 pages) | Cited 26 times

Online Publication Date: 3 November 2003

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InS nanowires uniformly sheathed with amorphous SiO2 were synthesized via a physical vapor deposition process. InS nanowires were 20–100 nm in diameter, and the SiO2 sheaths were 5–20 nm in thickness. Single-crystalline InS cores displayed orthorhombic structure and their longitudinal directions were preferentially aligned in the [100] orientation. Pure SiO2 nanotubes of typically round cross sections were also obtained by removing InS cores from the prepared nanocables via thermal evaporation. Photoluminescence measurements on these SiO2 nanotubes demonstrated strong visible-light emission peaked at 570 nm. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
78.67.Ch Nanotubes
78.55.Hx Other solid inorganic materials

Self-ordering of Ge islands on step-bunched Si(111) surfaces

A. Sgarlata, P. D. Szkutnik, A. Balzarotti, N. Motta, and F. Rosei

Appl. Phys. Lett. 83, 4002 (2003); http://dx.doi.org/10.1063/1.1626260 (3 pages) | Cited 39 times

Online Publication Date: 3 November 2003

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By using step-bunched Si(111) surfaces as templates, we demonstrate the self-assembly of an ordered distribution of Ge islands without lithographic patterning. Initially, islands nucleate and evolve at step edges, up to complete ripening, forming long ribbons. Subsequently, island nucleation takes place at the center of flat terraces. Ge islands appear to be regularly spaced in scanning tunneling microscope images. The exploitation of this effect provides a possible route to grow ordered arrays of semiconducting nanostructures. © 2003 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

In situ control of the focused-electron-beam-induced deposition process

T. Bret, I. Utke, A. Bachmann, and P. Hoffmann

Appl. Phys. Lett. 83, 4005 (2003); http://dx.doi.org/10.1063/1.1626261 (3 pages) | Cited 29 times

Online Publication Date: 3 November 2003

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A simple quantitative method for in situ control of the focused-electron-beam-induced deposition process is discussed and demonstrated with precursors used for Au, Cu, Rh, and SiO2 deposition. A picoamperemeter monitors the electron current flowing through the sample, which reproducibly drops at a characteristic rate to a plateau value during deposition. These parameters are correlated to deposit geometry, composition, and precursor supply. Monte Carlo simulations of electron backscattering and secondary electron emission by the growing structures show excellent agreement with the experiment. The method could apply to a wide range of charged-particle deposition and etching processes. © 2003 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.Cf Surface cleaning, etching, patterning
79.20.Kz Other electron-impact emission phenomena
79.20.Hx Electron impact: secondary emission

Imaging the charge transport in arrays of CdSe nanocrystals

M. Drndić, R. Markov, M. V. Jarosz, M. G. Bawendi, M. A. Kastner, N. Markovic, and M. Tinkham

Appl. Phys. Lett. 83, 4008 (2003); http://dx.doi.org/10.1063/1.1626268 (3 pages) | Cited 13 times

Online Publication Date: 3 November 2003

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A method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting extremely high resistances or very small diffusion coefficients. © 2003 American Institute of Physics.
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73.61.Ga II-VI semiconductors
73.63.Bd Nanocrystalline materials
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.46.-w Structure of nanoscale materials

High temperature structural studies of HgS and HgSe quantum dots

Syed B. Qadri, Masaru Kuno, C. R. Feng, B. B. Rath, and M. Yousuf

Appl. Phys. Lett. 83, 4011 (2003); http://dx.doi.org/10.1063/1.1625433 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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We report the structural investigations of β-HgS and HgSe quantum dots as a function of temperature between 300 and 600 K using x-ray diffraction. For both the chalcogenides, the zinc-blende structure remains stable up to 600 K without undergoing any phase transformation. The crystallite size increases as a function of temperature. However, for nanocrystallite ∼5.0 nm, lattice parameters show reduction in comparison to their bulk values. With increase in temperature, the lattice parameter increases and approaches the equilibrium value as the crystallite sizes grow to more than 10.0 nm. We attribute the temperature induced increase in crystallite size primarily to normal grain growth, a phenomenon observed in crystalline solids when the crystallite size undergoes gradual increase as function of time at elevated temperatures with accompanying recrystallization of new crystallite nuclei, and we rule out the possibility of size-dependent melting. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
61.46.-w Structure of nanoscale materials
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
61.05.cp X-ray diffraction

Chemical gating of In2O3 nanowires by organic and biomolecules

Chao Li, Bo Lei, Daihua Zhang, Xiaolei Liu, Song Han, Tao Tang, Mahsa Rouhanizadeh, Tzung Hsiai, and Chongwu Zhou

Appl. Phys. Lett. 83, 4014 (2003); http://dx.doi.org/10.1063/1.1625421 (3 pages) | Cited 29 times

Online Publication Date: 3 November 2003

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In2O3 nanowire transistors were used to investigate the chemical gating effect of organic molecules and biomolecules with amino or nitro groups. The nanowire conductance changed dramatically after adsorption of these molecules. Specifically, amino groups in organic molecules such as butylamine, donated electrons to In2O3 nanowires and thus led to enhanced carrier concentrations and conductance, whereas molecules with nitro groups such as butyl nitrite made In2O3 nanowires less conductive by withdrawing electrons. In addition, intrananowire junctions created by partial exposure of the nanowire device to butyl nitrite were investigated, and pronounced rectifying current–voltage characteristics were obtained. Furthermore, chemical gating by low-density lipoprotein cholesterol, the offending agent in coronary heart diseases, was also observed and attributed to the amino groups carried by the bio species. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
87.85.Qr Nanotechnologies-design
87.85.Rs Nanotechnologies-applications

Electromagnetic wave absorption properties of α-Fe/Fe3B/Y2O3 nanocomposites in gigahertz range

Jiu Rong Liu, Masahiro Itoh, and Ken-ichi Machida

Appl. Phys. Lett. 83, 4017 (2003); http://dx.doi.org/10.1063/1.1623934 (3 pages) | Cited 72 times

Online Publication Date: 3 November 2003

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Nanocomposites α-Fe/Fe3B/Y2O3 were prepared by a melt-spun technique, and the electromagnetic wave absorption properties were measured in the 0.05–20.05 GHz range. Compared with α-Fe/Y2O3 composites, the resonance frequency (fr) of α-Fe/Fe3B/Y2O3 shifted to a higher frequency range due to the large anisotropy field (HA) of tetragonal Fe3B (∼0.4 MA/m). The relative permittivity (ϵr = ϵr′−jϵr″) was constantly low over the 0.5–10 GHz region, which indicates that the composite powders have a high resistivity (ρ = ∼ 100 Ω m). The effective electromagnetic wave absorption (reflection loss <−20 dB) was obtained in a frequency range of 2.7–6.5 GHz on resin composites of 80 wt % α-Fe/Fe3B/Y2O3 powders, with thickness of 6–3 mm, respectively. A minimum reflection loss of −33 dB was observed at 4.5 GHz with an absorber thickness of 4 mm. © 2003 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
81.07.Wx Nanopowders
72.80.Tm Composite materials
77.22.Ch Permittivity (dielectric function)
41.20.Jb Electromagnetic wave propagation; radiowave propagation
73.63.Bd Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Synthesis, optical, and magnetic properties of diluted magnetic semiconductor Zn1−xMnxO nanowires via vapor phase growth

Y. Q. Chang, D. B. Wang, X. H. Luo, X. Y. Xu, X. H. Chen, L. Li, C. P. Chen, R. M. Wang, J. Xu, and D. P. Yu

Appl. Phys. Lett. 83, 4020 (2003); http://dx.doi.org/10.1063/1.1625788 (3 pages) | Cited 96 times

Online Publication Date: 3 November 2003

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Diluted magnetic semiconductor Zn1−xMnxO nanowires were synthesized via an in situ doping of manganese in ZnO nanowires using vapor phase growth at 500 °C. The maximum content of the manganese in the ZnO is around 13 at. %, approaching the maximum thermal equilibrium limit of Mn solubility in ZnO at the growth temperature. Structure and composition analysis revealed that the manganese was doped into the lattice structure, forming solid solution instead of precipitation. Magnetic property measurements revealed that the as-doped Zn1−xMnxO nanowires exhibit ferromagnetic behavior with Curie temperature around 37 K. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
75.50.Pp Magnetic semiconductors
75.50.Tt Fine-particle systems; nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.16.Be Chemical synthesis methods
64.75.-g Phase equilibria
68.37.Lp Transmission electron microscopy (TEM)
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
78.30.Fs III-V and II-VI semiconductors

Characterization of isomers in aluminum tris(quinoline-8-olate) by one-dimensional 27Al nuclear magnetic resonance under magic-angle spinning

Marcel Utz, Magesh Nandagopal, Mathew Mathai, and Fotios Papadimitrakopoulos

Appl. Phys. Lett. 83, 4023 (2003); http://dx.doi.org/10.1063/1.1623945 (3 pages) | Cited 17 times

Online Publication Date: 3 November 2003

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Solid-state 27Al NMR spectra under magic-angle spinning of different forms of aluminum tris(quinoline-8-olate) (Alq3) are presented. Alq3 is an organometallic complex of great importance in the context of organic light-emitting diodes. Our results demonstrate a strong difference in the asymmetry of the electric field gradient (EFG) tensor at the aluminum site between the α and the recently discovered δ polymorph of Alq3. While the EFG is nearly planar (η≈1) in the α phase, it is nearly axially symmetric (η≈0) for the δ phase. This result provides strong support to the hypothesis that the δ phase contains the facial isomer of Alq3. While the spectra of both the α and the δ polymorphs exhibit sharp features, highly disordered forms of Alq3 obtained from rapid vapor deposition onto a cold substrate, yield broadened spectra, indicating substantial structural disorder in the local geometry of different Alq3 molecules. © 2003 American Institute of Physics.
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76.60.-k Nuclear magnetic resonance and relaxation
61.66.Hq Organic compounds
71.70.Ch Crystal and ligand fields
71.70.Jp Nuclear states and interactions

Nerve agent detection using networks of single-walled carbon nanotubes

J. P. Novak, E. S. Snow, E. J. Houser, D. Park, J. L. Stepnowski, and R. A. McGill

Appl. Phys. Lett. 83, 4026 (2003); http://dx.doi.org/10.1063/1.1626265 (3 pages) | Cited 138 times

Online Publication Date: 3 November 2003

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We report the use of carbon nanotubes as a sensor for chemical nerve agents. Thin-film transistors constructed from random networks of single-walled carbon nanotubes were used to detect dimethyl methylphosphonate (DMMP), a simulant for the nerve agent sarin. These sensors are reversible and capable of detecting DMMP at sub-ppb concentration levels, and they are intrinsically selective against interferent signals from hydrocarbon vapors and humidity. We provide additional chemical specificity by the use of filters coated with chemoselective polymer films. These results indicate that the electronic detection of sub-ppb concentrations of nerve agents and potentially other chemical warfare agents is possible with simple-to-fabricate carbon nanotube devices. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Kt Nanotube devices
73.63.Fg Nanotubes
85.30.Tv Field effect devices
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