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10 Nov 2003

Volume 83, Issue 19, pp. 3855-4062

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 3870 (2003); http://dx.doi.org/10.1063/1.1626004 (3 pages)

Soon-Hong Kwon, Han-Youl Ryu, Guk-Hyun Kim, Yong-Hee Lee, and Sung-Bock Kim
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Defect generation by preferred nucleation in epitaxial Sr2RuO4/LaAlO3

Mark A. Zurbuchen, Yunfa Jia, Stacy Knapp, Altaf H. Carim, Darrell G. Schlom, and X. Q. Pan

Appl. Phys. Lett. 83, 3891 (2003); http://dx.doi.org/10.1063/1.1624631 (3 pages) | Cited 3 times

Online Publication Date: 3 November 2003

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The atomic structure of the film–substrate interface of a (001) Sr2RuO4/(100)c LaAlO3 film, determined by high-resolution transmission electron microscopy and simulation, is reported. The structure of superconductivity-quenching Δc ≈ 0.25 nm out-of-phase boundaries (OPBs) in the film is also reported. Growth in one region on the La-terminated surface is observed to nucleate with a SrO layer. Because two structurally equivalent SrO layers exist within the unit cell, two neighboring nuclei with differing growth order (SrO-RuO2-SrO or RuO2-SrO-SrO) will nucleate an OPB where their misaligned growth fronts meet. Strategies to avoid OPB generation by this mechanism are suggested, which it is hoped may ultimately lead to superconducting Sr2RuO4 films. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
74.78.-w Superconducting films and low-dimensional structures
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Fast diffusion in ZrTiCuNiBe melts

A. Meyer, W. Petry, M. Koza, and M.-P. Macht

Appl. Phys. Lett. 83, 3894 (2003); http://dx.doi.org/10.1063/1.1625793 (3 pages) | Cited 22 times

Online Publication Date: 3 November 2003

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Atomic transport in Zr41.2Ti13.8Cu12.5Ni10Be22.5 and Zr46.8Ti8.2Cu7.5Ni10Be27.5 melts has been investigated with incoherent, quasielastic neutron scattering. From the q dependence of the quasielastic signal an average self-diffusion coefficient of the incoherent scatterers Ni and Ti has been obtained. Values are on a 10−10 m2 s−1 scale. In contrast to the viscosity, the diffusion coefficient is rather independent of the alloy’s composition. Above the liquidus temperature times scales for Ni and Ti self diffusion and for viscous flow differ by up to two orders of magnitude: It appears, that the smaller atoms diffuse in a relative immobile Zr matrix. © 2003 American Institute of Physics.
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66.10.C- Diffusion and thermal diffusion
66.20.-d Viscosity of liquids; diffusive momentum transport
61.25.Mv Liquid metals and alloys

Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, and Ulrich Gösele

Appl. Phys. Lett. 83, 3897 (2003); http://dx.doi.org/10.1063/1.1625775 (3 pages) | Cited 15 times

Online Publication Date: 3 November 2003

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Self-diffusion of ion-implanted 30Si in SiO2 formed directly on Si substrates by thermal oxidation was studied as a function of the temperature and SiO2 thickness (200, 300, and 650 nm). The diffusion coefficient increases by about an order of magnitude with decreasing SiO2 thickness from 650 to 200 nm when silicon–nitride capping layers are placed on top of the SiO2, i.e., the distance between the 30Si diffusers and Si/SiO2 interface has a strong influence. Because the stress on SiO2 by nitride estimated for such a change in diffusivity is unrealistically large, Si species, most likely SiO, generated at the Si/SiO2 interface and diffusing into SiO2 must be affecting the self-diffusion of Si in SiO2. © 2003 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
81.65.Mq Oxidation
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

Large band gaps in elastic phononic crystals with air inclusions

Yun Lai and Zhao-Qing Zhang

Appl. Phys. Lett. 83, 3900 (2003); http://dx.doi.org/10.1063/1.1625998 (3 pages) | Cited 21 times

Online Publication Date: 3 November 2003

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We find that a large absolute band gap can be created by inserting air inclusions in a two-component elastic phononic crystal with small density contrast and filling fraction. The positions of the insertion are chosen to suppress the shear potential energy of the first optical band and lower their frequencies. This is demonstrated in a two-dimensional system consisting of aluminum cylinders in a triangular lattice with a filling fraction of 0.145 embedded in an epoxy host. Both the band structure and the transmission calculations show that the insertion of air cylinders in the earlier system is capable of creating a large elastic band gap with gap/midgap ratio Δω/ωc = 0.53. Such a system makes the realization of a light and effective sonic insulator possible. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
78.20.-e Optical properties of bulk materials and thin films
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Structural and elastic anisotropy of carbon phases prepared from fullerite C60

A. G. Lyapin, V. V. Mukhamadiarov, V. V. Brazhkin, S. V. Popova, M. V. Kondrin, R. A. Sadykov, E. V. Tat’yanin, S. C. Bayliss, and A. V. Sapelkin

Appl. Phys. Lett. 83, 3903 (2003); http://dx.doi.org/10.1063/1.1625432 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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We show that application of nonhydrostatic pressure to cluster-based molecular material, like fullerite C60, provides an opportunity to create elastically and structurally anisotropic carbon materials, including two-dimensional polymerized rhombohedral C60 and superhard graphite-type (sp2) disordered atomic-based phases. There is direct correlation between textured polymerized and/or textured covalent structure and anisotropic elasticity. Whereas this anisotropy is induced by the uniaxial pressure component, in the case of disordered atomic-based phases, it may be governed by the uniform pressure magnitude. © 2003 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
62.50.-p High-pressure effects in solids and liquids
62.20.D- Elasticity

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Shih-Wei Feng, En-Chiang Lin, Tsung-Yi Tang, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 83, 3906 (2003); http://dx.doi.org/10.1063/1.1625434 (3 pages) | Cited 13 times

Online Publication Date: 3 November 2003

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We compared the optical and material properties of an InGaN thin film with an average indium content at 0.31 between as-grown and postgrowth thermally annealed conditions. The major part of the photoluminescence spectrum was shifted from the original yellow band into the blue range upon thermal annealing. Cathodoluminescence (CL) spectra showed that the spectral shift occurred essentially in a shallow layer of the InGaN film. The deeper layer in the as-grown sample contributed blue emission because it had been thermally annealed during the growth of the shallow layer. The spectral change was attributed to the general trends of cluster size reduction and possibly quantum-confined Stark effect relaxation upon thermal annealing. The attribution was supported by the observations in the CL, x-ray diffraction, and high-resolution transmission electron microscopy results. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence
68.37.Lp Transmission electron microscopy (TEM)
78.55.Cr III-V semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Niobium nanoclusters studied with in situ transmission electron microscopy

T. Vystavel, G. Palasantzas, S. A. Koch, and J. Th. M. De Hosson

Appl. Phys. Lett. 83, 3909 (2003); http://dx.doi.org/10.1063/1.1625789 (3 pages) | Cited 7 times

Online Publication Date: 3 November 2003

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Structural aspects of deposited niobium nanoclusters approximately 10 nm in size have been explored by means of high-resolution transmission electron microscopy. The niobium clusters have a bcc structure and a crystal habit of rhombic dodecahedron. In situ heating up to ∼ 800 °C revealed a resistance to high temperatures, in the sense that the cluster habit is preserved. However, the internal structural order of the clusters is altered due to formation of niobium oxide domains within the clusters. Coalescence does not occur even at the highest temperatures, which is attributed to the presence of facets and the occurrence of oxidation during heat treatment. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.37.Lp Transmission electron microscopy (TEM)

Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

Jens Herfort, Hans-Peter Schönherr, and Klaus H. Ploog

Appl. Phys. Lett. 83, 3912 (2003); http://dx.doi.org/10.1063/1.1625426 (3 pages) | Cited 57 times

Online Publication Date: 3 November 2003

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We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si. © 2003 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.50.Bb Fe and its alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Cr Saturation moments and magnetic susceptibilities

Optical properties of Pb(Zr,Ti)O3 thin films on sapphire prepared by metalorganic decomposition process

Chien-Kang Kao, Chuen-Horng Tsai, and I-Nan Lin

Appl. Phys. Lett. 83, 3915 (2003); http://dx.doi.org/10.1063/1.1625428 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2003

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Pb(Zr0.52Ti0.48)O3 (PZT) thin films were synthesized on a sapphire substrate for application as planar optical waveguide devices using a metalorganic decomposition (MOD) process. Pyrochlore phase, which always forms preferentially when the PZT thin films (∼200 nm) are deposited on a sapphire substrate directly, has been effectively suppressed by using a SrTiO3 (STO) film (∼190 nm) as a buffer layer. The PZT/sapphire thin films have a significantly larger refractive index than the STO/sapphire ones: nPZT = 2.2012 and nSTO = 2.0639 (at 632.8 nm) by prism coupling measurement and nPZT′ = 2.215 and nSTO′ = 2.084 (at 632.8 nm) by optical transmission spectroscopic measurement. The STO layer cannot only serve as buffer layer for enhancing the crystallization kinetics of the subsequently deposited PZT thin films, but can also serve as cladding layer in a ridge-type planar waveguide, which uses PZT thin film as core materials. © 2003 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators
68.55.-a Thin film structure and morphology

Formation of silicides in a cavity applicator microwave system

D. C. Thompson, H. C. Kim, T. L. Alford, and J. W. Mayer

Appl. Phys. Lett. 83, 3918 (2003); http://dx.doi.org/10.1063/1.1625430 (3 pages) | Cited 6 times

Online Publication Date: 3 November 2003

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Metal silicides of nickel and cobalt are formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. X-ray diffraction, Rutherford backscattering spectrometry, and four-point-probe measurements are used to identify the silicide phase present and layer thicknesses. Additional processing confirmed that the products attained from heating by microwaves do not differ appreciably from those attained in heating by thermal processes. Materials properties are used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained and specific products isolated. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
84.40.-x Radiowave and microwave (including millimeter wave) technology
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm

M. Sukhotin, E. R. Brown, D. Driscoll, M. Hanson, and A. C. Gossard

Appl. Phys. Lett. 83, 3921 (2003); http://dx.doi.org/10.1063/1.1622121 (3 pages) | Cited 11 times

Online Publication Date: 3 November 2003

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This letter reports the measurement of photocarrier lifetime in ErAs:InGaAs epitaxial material grown on InP substrates. The measurement technique is ultrafast time-resolved phototransmission using a 1.55 μm mode-locked erbium-doped fiber laser. A lifetime of 3.56 ps is found in a sample containing an InAlAs smoothing layer, compared to 0.96 ps in a sample without any InAlAs. The difference is explained using a model of ambipolar diffusion of photocarriers. © 2003 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Evidence of icosahedral short-range order in Zr70Cu30 and Zr70Cu29Pd1 metallic glasses

K. Saksl, H. Franz, P. Jóvári, K. Klementiev, E. Welter, A. Ehnes, J. Saida, A. Inoue, and J. Z. Jiang

Appl. Phys. Lett. 83, 3924 (2003); http://dx.doi.org/10.1063/1.1626266 (3 pages) | Cited 57 times

Online Publication Date: 3 November 2003

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Change in local atomic environment during crystallization of Zr-based glassy alloys was studied by extended x-ray absorption fine structure (EXAFS) spectroscopy. The formation of icosahedral quasicrystalline phase followed by crystallization of tetragonal CuZr2 has been observed in the Zr70Cu29Pd1 glassy alloy during annealing up to 850 K. On the other hand, the binary Zr70Cu30 alloy shows a single glassy to crystalline CuZr2 phase transformation. The local atomic environment of as-quenched Zr70Cu30 alloy is matched to an icosahedral local atomic configuration, which is similar to that of the as-quenched Zr70Cu29Pd1 alloy and the alloy annealed at 593 K containing icosahedral phase. Considering that the supercooled liquid region appears prior to crystallization in the Zr70Cu30 glassy alloy, the observed results support the theory claiming a strong correlation between the existence of local icosahedral short-range order and stability of the supercooled liquid state. © 2003 American Institute of Physics.
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61.43.Fs Glasses
61.44.Br Quasicrystals
78.70.Dm X-ray absorption spectra
81.40.Gh Other heat and thermomechanical treatments
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