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17 Nov 2003

Volume 83, Issue 20, pp. 4083-4258

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4238 (2003); http://dx.doi.org/10.1063/1.1627935 (3 pages)

H. B. Peng, T. G. Ristroph, G. M. Schurmann, G. M. King, J. Yoon, V. Narayanamurti, and J. A. Golovchenko
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Fluctuation and localization of acoustic waves in bubbly water

Chao-Hsien Kuo, Ken Kang-Hsin Wang, and Zhen Ye

Appl. Phys. Lett. 83, 4247 (2003); http://dx.doi.org/10.1063/1.1627937 (3 pages) | Cited 5 times

Online Publication Date: 12 November 2003

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The fluctuation properties of acoustic localization in bubbly water is explored. We show that the strong localization can occur in such a system for a certain frequency range and sufficient filling fractions of air bubbles. Two fluctuating quantities are considered, that is, the fluctuation of transmission and the fluctuation of the phase of acoustic wave fields. When localization occurs, these fluctuations tend to vanish, a feature able to uniquely identify the phenomenon of wave localization. © 2003 American Institute of Physics.
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43.25.Yw Nonlinear acoustics of bubbly liquids
43.30.-k Underwater sound
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

Fabrication of elastomeric stamps with polymer-reinforced sidewalls via chemically selective vapor deposition polymerization of poly(p-xylylene)

Kahp Y. Suh, Robert Langer, and Jörg Lahann

Appl. Phys. Lett. 83, 4250 (2003); http://dx.doi.org/10.1063/1.1628392 (3 pages) | Cited 18 times

Online Publication Date: 12 November 2003

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We report on the preparation of polydimethylsiloxane stamps with selectively grown polymer sidewalls by chemical vapor deposition polymerization of poly(p-xylylene). Using a thin iron layer as an inhibitor, the deposition occurs only on the sidewalls of the features in relief, resulting in a polymer-reinforced stamp. The wetting properties of stamps can be restored after removing the thin iron layer with an acidic solution, which has been verified by pattern transfer to an underlying substrate using molding and microcontact printing. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.35.Gh Polymers on surfaces; adhesion
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.10.Fq Growth from melts; zone melting and refining
47.85.Np Fluidics
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Quantitative scanning capacitance spectroscopy

W. Brezna, M. Schramboeck, A. Lugstein, S. Harasek, H. Enichlmair, E. Bertagnolli, E. Gornik, and J. Smoliner

Appl. Phys. Lett. 83, 4253 (2003); http://dx.doi.org/10.1063/1.1628402 (3 pages) | Cited 15 times

Online Publication Date: 12 November 2003

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In this work, a setup for quantitative scanning capacitance spectroscopy is introduced, where an ultrahigh precision, calibrated capacitance bridge is used together with a commercially available atomic force microscope (AFM). We show that capacitance data measured with this setup are of comparable quality as data obtained on macroscopic metal oxide semiconductor capacitors. In addition, our setup is sensitive enough to resolve the energy distribution of interface traps with the spatial resolution of an AFM. This is an advantage compared to conventional scanning capacitance microscopes, which have a limited energy resolution and only yield qualitative results due to large modulation voltages. © 2003 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.37.Ps Atomic force microscopy (AFM)
84.32.Tt Capacitors
85.30.Tv Field effect devices

Amorphous germanium recombination junctions in amorphous-silicon-based tandem solar cells

G. Ganguly, D. E. Carlson, and R. R. Arya

Appl. Phys. Lett. 83, 4256 (2003); http://dx.doi.org/10.1063/1.1625795 (3 pages)

Online Publication Date: 12 November 2003

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The recombination junction between two cells in amorphous-silicon-based tandem devices can be improved by inserting doped nanocrystalline silicon layers, which have higher conductivities, between doped amorphous silicon layers. However, long deposition times ( ∼ 15 min) are required to nucleate and grow these thin nanocrystalline silicon layers on an amorphous-silicon layer. We show that by increasing the phosphorus doping in the amorphous silicon n layer, and replacing the nanocrystalline silicon layers with amorphous germanium layers, a similar performance is obtained with a shorter ( ∼ 1 min) deposition time. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
61.72.uf Ge and Si
81.05.Gc Amorphous semiconductors
73.61.Jc Amorphous semiconductors; glasses
61.43.Dq Amorphous semiconductors, metals, and alloys
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