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17 Nov 2003

Volume 83, Issue 20, pp. 4083-4258

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Appl. Phys. Lett. 83, 4238 (2003); http://dx.doi.org/10.1063/1.1627935 (3 pages)

H. B. Peng, T. G. Ristroph, G. M. Schurmann, G. M. King, J. Yoon, V. Narayanamurti, and J. A. Golovchenko
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Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

A. Yasan, R. McClintock, K. Mayes, D. H. Kim, P. Kung, and M. Razeghi

Appl. Phys. Lett. 83, 4083 (2003); http://dx.doi.org/10.1063/1.1626808 (3 pages) | Cited 19 times

Online Publication Date: 12 November 2003

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We investigated optical properties of single quantum well AlGaN-based UV 280 nm light-emitting diodes using temperature-dependent photoluminescence (PL) measurement. We found an “S-shaped” temperature dependence of the peak energy. From the Arrhenius plot of integrated PL intensity, we speculate that dislocations as well as thermal emission of carriers out of the quantum well are responsible for the PL quenching behavior. Also a second nonradiative channel with much lower activation energy was found, the origin of which we believe to be quenching of the bound excitons. © 2003 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Jb Light-emitting devices
78.67.De Quantum wells
73.21.Fg Quantum wells
78.55.Cr III-V semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

90 W continuous-wave diode edge-pumped microchip composite Yb:Y3Al5O12 laser

T. Dascalu, N. Pavel, and T. Taira

Appl. Phys. Lett. 83, 4086 (2003); http://dx.doi.org/10.1063/1.1627960 (3 pages) | Cited 14 times

Online Publication Date: 12 November 2003

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High-power continuous-wave (cw) operation of a diode edge-pumped microchip composite Yb:Y3Al5O12 (YAG) laser is reported. Up to 90 W were obtained from a 400-μm-thick Yb:YAG/YAG structure with a 10 at. % Yb:YAG square core of 2×2 mm2 area; the slope efficiency and optical-to-optical efficiency with respect to the pump power were 40% and 28%, respectively. Measurements of the optical phase distortions induced by pumping gives a focus shift bellow 0.05 m and shows the absence of astigmatic effects, indicating the axial heat flow in this pumping configuration. © 2003 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers

Imaging of emission patterns in a T-shaped quantum wire laser

Yasushi Takahashi, Shinichi Watanabe, Masahiro Yoshita, Hirotake Itoh, Yuhei Hayamizu, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West

Appl. Phys. Lett. 83, 4089 (2003); http://dx.doi.org/10.1063/1.1627963 (3 pages) | Cited 5 times

Online Publication Date: 12 November 2003

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Spatially and spectrally resolved microscopic images of spontaneous and stimulated emissions are imaged at the mirror facets of a GaAs T-shaped quantum wire laser with high uniformity. Laser emission from the one-dimensional ground state reveals a circular image located at the core of a T-shaped optical waveguide but significantly smaller in area than the low power spontaneous emission from the same waveguide. These images unambiguously allow assignment of all spontaneous and laser emissions to the wire ground state and respective intersecting wells in the structure. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

R. Bates, S. A. Lynch, D. J. Paul, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, W. R. Tribe, and D. D. Arnone

Appl. Phys. Lett. 83, 4092 (2003); http://dx.doi.org/10.1063/1.1626003 (3 pages) | Cited 43 times

Online Publication Date: 12 November 2003

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The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators
78.66.Li Other semiconductors
73.20.At Surface states, band structure, electron density of states

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, and V. Härle

Appl. Phys. Lett. 83, 4095 (2003); http://dx.doi.org/10.1063/1.1628825 (3 pages) | Cited 39 times

Online Publication Date: 12 November 2003

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Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells

Mid-infrared external-cavity two-segment quantum-cascade laser

C. Peng, H. L. Zhang, and H. Q. Le

Appl. Phys. Lett. 83, 4098 (2003); http://dx.doi.org/10.1063/1.1627486 (3 pages) | Cited 5 times

Online Publication Date: 12 November 2003

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An external-cavity mid-infrared quantum-cascade laser allows broad and continuous wavelength tuning and modulation when controlled with a combination of grating position and cavity phase on a two-segment optical amplifier chip. The electrically controlled phase segment allows fine wavelength tuning to complement the coarse grating tuning. The 4.8-μm laser was tested with CO gas absorption and wavelength modulation spectroscopy, showing a spectral resolution limited by the laser linewidth of ∼550 MHz, but also allowing sublinewidth modulation of ⩽200 MHz. The tuning range from 4.855 to 4.9 μm (0.57 THz) was limited by the device intrinsic gain. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Simultaneous generation of multiple pairs of transverse electric and transverse magnetic output modes from titania zirconia organically modified silicate distributed feedback waveguide lasers

Chao Ye, Lei Shi, Jun Wang, Dennis Lo, and Xiao-lei Zhu

Appl. Phys. Lett. 83, 4101 (2003); http://dx.doi.org/10.1063/1.1627468 (3 pages) | Cited 13 times

Online Publication Date: 12 November 2003

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Output polarization and output wavelength of titania zirconia organically modified silicate distributed feedback waveguide lasers were found to be dependent on the polarization of the crossing pump beams. Output waves with transverse electric polarization were obtained when the pump beams were s-polarized. Transverse electric and transverse magnetic optical waves belonging to the same propagation mode were generated by crossing two circularly polarized or p-polarized pump beams. Tuning of the polarized laser output was also achieved by varying the crossing angle. Up to sixteen output wavelengths corresponding to eight pairs of polarized output from eight propagation modes were observed simultaneously for a planar waveguide with a thickness of 6.7 μm. © 2003 American Institute of Physics.
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42.55.Mv Dye lasers

The electrical turn-on characteristics of vertical-cavity surface-emitting lasers

Yang Liu, Kent D. Choquette, and Karl Hess

Appl. Phys. Lett. 83, 4104 (2003); http://dx.doi.org/10.1063/1.1628816 (3 pages) | Cited 1 time

Online Publication Date: 12 November 2003

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We present a detailed comparison of the electrical turn-on characteristics of 980 nm vertical-cavity surface-emitting lasers (VCSELs) with simulations using a recently extended laser simulator. It is shown that the three recombination mechanisms, spontaneous emission, Shockley–Read–Hall recombination, and Auger recombination, result in distinctly different exponential current–voltage dependencies below threshold. Therefore, information can be extracted about the relative strength of the recombination rates due to those processes, and their relative contributions to the threshold current can be assessed. We show that for the VCSELs studied in this work, spontaneous emission is the dominant contribution to the threshold current. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
79.20.Fv Electron impact: Auger emission
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers

J. R. Cao, Wan Kuang, Sang-Jun Choi, Po-Tsung Lee, John D. O’Brien, and P. Daniel Dapkus

Appl. Phys. Lett. 83, 4107 (2003); http://dx.doi.org/10.1063/1.1627466 (3 pages) | Cited 8 times

Online Publication Date: 12 November 2003

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Lithographically defined multiwavelength photonic crystal laser arrays are reported. The dependence of the threshold pump power on the spectral alignment between the quantum-well gain peak and the cavity resonance wavelength is investigated. This is done at, and slightly above, room temperature. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Continuous-wave laser action at λ = 1064.3 nm in proton- and carbon-implanted Nd:YAG waveguides

M. Domenech, G. V. Vázquez, E. Cantelar, and G. Lifante

Appl. Phys. Lett. 83, 4110 (2003); http://dx.doi.org/10.1063/1.1628817 (3 pages) | Cited 27 times

Online Publication Date: 12 November 2003

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This work reports continuous laser oscillation at λ = 1064.3 nm at room temperature in Nd:YAG planar waveguides fabricated by two different techniques: proton implantation with a multi-implant of energies around 1 MeV and carbon implantation with a single-implant at an energy of 7 MeV. Threshold powers of 11 and 22 mW and slope efficiencies of 7% and 9% were achieved in the proton- and carbon-implanted guides, respectively. The laser outputs show a very high stability operating in cw regime at room temperature. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Ms Insulators

Terahertz pulsed imaging with 1.06 μm laser excitation

C. Baker, I. S. Gregory, W. R. Tribe, I. V. Bradley, M. J. Evans, M. Withers, P. F. Taday, V. P. Wallace, E. H. Linfield, A. G. Davies, and M. Missous

Appl. Phys. Lett. 83, 4113 (2003); http://dx.doi.org/10.1063/1.1627485 (3 pages) | Cited 35 times

Online Publication Date: 12 November 2003

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We report the operation of a pulsed terahertz (THz) imaging system that uses a 120 fs pulse-width laser operating at 1.06 μm, and photoconductive InGaAs emitters and detectors. THz images are presented of biological and nonbiological specimens. The signal-to-noise ratio and frequency range of this system are compared to those obtained from existing pulsed imaging systems based on 0.8 μm excitation. © 2003 American Institute of Physics.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Jb Light-emitting devices
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope

J. H. Jang, W. Zhao, J. W. Bae, D. Selvanathan, S. L. Rommel, I. Adesida, A. Lepore, M. Kwakernaak, and J. H. Abeles

Appl. Phys. Lett. 83, 4116 (2003); http://dx.doi.org/10.1063/1.1627480 (3 pages) | Cited 23 times

Online Publication Date: 12 November 2003

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An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in Cl2-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. Statistical information such as correlation length and rms roughness of the sidewall profile obtained through three-dimensional imaging by AFM has been presented. rms roughness as low as 3.45 nm was measured on the sidewall of 4-μm-deep etched InP/InGaAsP heterostructures. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
81.65.Cf Surface cleaning, etching, patterning
68.37.Ps Atomic force microscopy (AFM)
52.77.Bn Etching and cleaning
81.05.Ea III-V semiconductors
42.87.-d Optical testing techniques

Far-infrared multilayer mirrors

Robert Schiwon, Gerhard Schwaab, Erik Bründermann, and Martina Havenith

Appl. Phys. Lett. 83, 4119 (2003); http://dx.doi.org/10.1063/1.1627479 (3 pages) | Cited 8 times

Online Publication Date: 12 November 2003

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We present a concept for highly reflecting broadband mirrors in the far-infrared. We report on the fabrication of dielectric multilayer mirrors consisting of 1–6 layers of silicon wafers with vacuum gaps in between. By comparison to gold mirrors, we can demonstrate the high reflectivity (>99%) over the frequency range between 40 and 130 cm−1. The measurements are in very good agreement with theoretical predictions. © 2003 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques

Focusing of millimeter-wave radiation beyond the Abbe barrier

A. Pimenov and A. Loidl

Appl. Phys. Lett. 83, 4122 (2003); http://dx.doi.org/10.1063/1.1627474 (3 pages) | Cited 1 time

Online Publication Date: 12 November 2003

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A hemispherical focusing system for millimeter waves is presented. Focusing of the beam to a spot of ∼ 0.3λ was obtained in the frequency range from 100 to 200 GHz. Compared to the scanning near-field optical spectroscopy, the system allows simultaneous imaging of extensive subwavelength objects. As an example, a double slit of size d = 1 mm was clearly resolved using a radiation with a wavelength λ = 2 mm. Using future optically dense lenses, a resolution of the order λ/100 seems to become possible. © 2003 American Institute of Physics.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
42.79.Bh Lenses, prisms and mirrors

Optical parametric chirped-pulse amplification in periodically poled KTiOPO4 at 1053 nm

Igor Jovanovic, Jason R. Schmidt, and Christopher A. Ebbers

Appl. Phys. Lett. 83, 4125 (2003); http://dx.doi.org/10.1063/1.1627467 (3 pages) | Cited 19 times

Online Publication Date: 12 November 2003

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We have demonstrated a high-gain preamplifier for Nd:glass-based chirped-pulse amplification systems using optical parametric chirped-pulse amplification (OPCPA) in periodically poled potassium titanyl phosphate (PPKTP) in a collinear quasi-phase-matched configuration. The absence of birefringent walk-off enables high conversion efficiency and high beam quality using <1 mJ of pump energy. PPKTP has a potential to replace traditional angularly sensitive beta-barium borate preamplifiers for nearly degenerate OPCPA at wavelengths near 1 μm. © 2003 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
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