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17 Nov 2003

Volume 83, Issue 20, pp. 4083-4258

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4238 (2003); http://dx.doi.org/10.1063/1.1627935 (3 pages)

H. B. Peng, T. G. Ristroph, G. M. Schurmann, G. M. King, J. Yoon, V. Narayanamurti, and J. A. Golovchenko
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Formation and electron activation energy of self-assembled CdTe quantum wires grown on ZnTe buffer layers

T. W. Kim, E. H. Lee, K. H. Lee, J. S. Kim, and H. L. Park

Appl. Phys. Lett. 83, 4235 (2003); http://dx.doi.org/10.1063/1.1627961 (3 pages) | Cited 4 times

Online Publication Date: 12 November 2003

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Self-assembled CdTe quantum wires (QWRs) were grown on ZnTe buffer layers by using molecular-beam epitaxy. Atomic force microscopy images showed that preferentially oriented CdTe QWRs were formed on ZnTe buffer layers. The activation energy of the electrons confined in the CdTe QWRs, as obtained from the temperature-dependent photoluminescence spectra, was higher than that of electrons in CdTe/ZnTe quantum wells. These results indicate that self-assembled CdTe QWRs grown on ZnTe buffer layers hold promise for potential applications in optoelectric devices operating in the blue–green region of the spectrum. © 2003 American Institute of Physics.
Show PACS
73.21.Hb Quantum wires
78.67.Lt Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
78.55.Et II-VI semiconductors
68.37.Ps Atomic force microscopy (AFM)

Patterned growth of single-walled carbon nanotube arrays from a vapor-deposited Fe catalyst

H. B. Peng, T. G. Ristroph, G. M. Schurmann, G. M. King, J. Yoon, V. Narayanamurti, and J. A. Golovchenko

Appl. Phys. Lett. 83, 4238 (2003); http://dx.doi.org/10.1063/1.1627935 (3 pages) | Cited 41 times

Online Publication Date: 12 November 2003

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Single-walled carbon nanotubes have been grown on a variety of substrates by chemical vapor deposition using low-coverage vacuum-deposited iron as a catalyst. Ordered arrays of suspended nanotubes ranging from submicron to several micron lengths have been obtained on Si, SiO2, Al2O3, and Si3N4 substrates that were patterned on hundred nanometer length scales with a focused ion beam machine. Electric fields applied during nanotube growth allow the control of growth direction. Nanotube circuits have been constructed directly on contacting metal electrodes of Pt/Cr patterned with catalysts. Patterning with solid iron catalyst is compatible with modern semiconductor fabrication strategies and may contribute to the integration of nanotubes in complex device architectures. © 2003 American Institute of Physics.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.16.Hc Catalytic methods
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Gallium nitride nanowires doped with silicon

Ji Liu, Xiang-Min Meng, Yang Jiang, Chun-Sing Lee, Igor Bello, and Shuit-Tong Lee

Appl. Phys. Lett. 83, 4241 (2003); http://dx.doi.org/10.1063/1.1628820 (3 pages) | Cited 28 times

Online Publication Date: 12 November 2003

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High-quality GaN nanowires doped with silicon have been synthesized by hot-filament chemical vapor deposition on Au-coated Si (100) wafers. The GaN was systematically characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, Raman spectroscopy, and photoluminescence (PL). The GaN nanowires had a uniform concentration of 3% Si, a uniform diameter around 10 nm, and a hexagonal wurtzite structure grown along the [001] direction. The intense PL peak of GaN nanowires at 344 nm showed a distinct blueshift from the bulk bandgap emission, revealing a clear quantum confinement effect. The growth of GaN nanowires is discussed in terms of the oxide-assisted metal-catalyst vapor–liquid–solid model. © 2003 American Institute of Physics.
Show PACS
81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.67.Lt Quantum wires
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
61.46.-w Structure of nanoscale materials
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