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17 Nov 2003

Volume 83, Issue 20, pp. 4083-4258

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Appl. Phys. Lett. 83, 4238 (2003); http://dx.doi.org/10.1063/1.1627935 (3 pages)

H. B. Peng, T. G. Ristroph, G. M. Schurmann, G. M. King, J. Yoon, V. Narayanamurti, and J. A. Golovchenko
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Point defects as result of surface deformation on a GaAs wafer

C. Zamponi, U. Männig, T. E. M. Staab, K. Maier, S. Eichler, and R. Hammer

Appl. Phys. Lett. 83, 4128 (2003); http://dx.doi.org/10.1063/1.1625786 (3 pages) | Cited 2 times

Online Publication Date: 12 November 2003

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Scratches on the surface of an undoped semi-insulating GaAs wafer have been produced by a wedge-shaped single diamond grain. The subsurface damage has been analyzed by a positron microprobe. This instrument provides laterally resolved positron annihilation measurements, which are sensitive to lattice defects like vacancies and dislocations. We can clearly identify different regions of damage which have been characterized both by conventional scanning electron microscopy and the positron microbeam. The latter reveals indications of plastic deformation due to the trace of created defects observed. We discuss the possible implications of the observed ductile behavior of GaAs usually known to be brittle at room temperature and under atmospheric pressure. © 2003 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
68.35.Dv Composition, segregation; defects and impurities
68.47.Fg Semiconductor surfaces
61.72.J- Point defects and defect clusters
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
78.70.Bj Positron annihilation
62.20.F- Deformation and plasticity

Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy

P. Offermans, P. M. Koenraad, J. H. Wolter, M. Beck, T. Aellen, and J. Faist

Appl. Phys. Lett. 83, 4131 (2003); http://dx.doi.org/10.1063/1.1627942 (3 pages) | Cited 13 times

Online Publication Date: 12 November 2003

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We have studied an InGaAs/InAlAs quantum cascade laser structure with cross-sectional scanning tunneling microscopy. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

H. A. W. El Mubarek and P. Ashburn

Appl. Phys. Lett. 83, 4134 (2003); http://dx.doi.org/10.1063/1.1622434 (3 pages) | Cited 14 times

Online Publication Date: 12 November 2003

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This letter investigates the effect of a deep F+ implant on the diffusion of boron in silicon. The effects on boron thermal diffusion and transient enhanced diffusion are separately studied by characterizing the diffusion of a buried boron marker layer in wafers with and without a 185 keV, 2.3 ×1015 cm−2 F+ implant, and with and without a 288 keV, 6 ×1013 cm−2 P+ implant. In samples given both P+ and F+ implants, the fluorine completely eliminates the transient, enhanced boron diffusion caused by the P+ implant, and in samples implanted with F+ only, the fluorine suppresses the boron thermal diffusion by 65%. These results are explained by the effect of the fluorine on the vacancy concentration in the vicinity of the boron profile. © 2003 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si

Mega-electron-volt ion beam induced anisotropic plasmon resonance of silver nanocrystals in glass

J. J. Penninkhof, A. Polman, Luke A. Sweatlock, Stefan A. Maier, Harry A. Atwater, A. M. Vredenberg, and B. J. Kooi

Appl. Phys. Lett. 83, 4137 (2003); http://dx.doi.org/10.1063/1.1627936 (3 pages) | Cited 29 times

Online Publication Date: 12 November 2003

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30 MeV Si ion beam irradiation of silica glass containing Ag nanocrystals causes alignment of Ag nanocrystals in arrays along the ion tracks. Optical transmission measurements show a large splitting of the surface plasmon resonance bands for polarizations longitudinal and transversal to the arrays. The splitting is in qualitative agreement with a model for near-field electromagnetic plasmon coupling within the arrays. Resonance shifts as large as 1.5 eV are observed, well into the near-infrared. © 2003 American Institute of Physics.
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73.22.Lp Collective excitations
61.80.Jh Ion radiation effects
61.82.Bg Metals and alloys
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials

Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1−xN interlayers

T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, and N. Kobayashi

Appl. Phys. Lett. 83, 4140 (2003); http://dx.doi.org/10.1063/1.1628397 (3 pages) | Cited 10 times

Online Publication Date: 12 November 2003

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Crack-free AlGaN thin films were directly grown on SiC substrates by metalorganic vapor phase epitaxy, and their threading dislocation density was reduced by one order of magnitude using 1–2 nm thick, heavily Si-doped AlN multiple interlayers. The interlayers form SixAl1−xN ternary alloys, where the Si molar fraction ranges typically from 0.07 to 0.17. This technique enables us to grow crack-free AlGaN films, since the film thickness of about 1 μm is much smaller than that required in conventional epitaxial lateral overgrowth techniques. Both termination and looping of threading dislocations were observed near the interlayers using cross-sectional transmission electron microscopy. Light emitting devices with the SixAl1−xN multiple interlayers showed a remarkable improvement in the intensity and spectral width of electroluminescence and the series resistance. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
61.72.Lk Linear defects: dislocations, disclinations
68.37.Lp Transmission electron microscopy (TEM)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Band gap tailoring of Nd3+-doped TiO2 nanoparticles

W. Li, Y. Wang, H. Lin, S. Ismat Shah, C. P. Huang, D. J. Doren, Sergey A. Rykov, J. G. Chen, and M. A. Barteau

Appl. Phys. Lett. 83, 4143 (2003); http://dx.doi.org/10.1063/1.1627962 (3 pages) | Cited 49 times

Online Publication Date: 12 November 2003

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Undoped and Nd3+-doped TiO2 nanoparticles were synthesized by chemical vapor deposition in order to tailor the band gap of TiO2. The doping reduced the band gap. The band gap was measured by ultraviolet-visible light absorption experiments and by near-edge x-ray absorption fine structure. The maximum band gap reduction was 0.55 eV for 1.5 at. % Nd-doped TiO2 nanoparticles. Density functional theory calculations using the generalized gradient approximation with the linearized augmented plane wave method were used to interpret the band gap narrowing. The band gap narrowing was primarily attributed to the substitutional Nd3+ ions which introduced electron states into the band gap of TiO2 to form the new lowest unoccupied molecular orbital. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
78.70.Dm X-ray absorption spectra
78.40.Ha Other nonmetallic inorganics
61.72.up Other materials
73.22.-f Electronic structure of nanoscale materials and related systems
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Highly sensitive optical monitoring of molecular film growth by organic molecular beam deposition

C. Goletti, G. Bussetti, P. Chiaradia, A. Sassella, and A. Borghesi

Appl. Phys. Lett. 83, 4146 (2003); http://dx.doi.org/10.1063/1.1626810 (3 pages) | Cited 20 times

Online Publication Date: 12 November 2003

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Reflectance anisotropy spectroscopy (RAS) has been employed to study in situ the growth of thin α-sexithiophene films by organic molecular beam deposition onto an organic substrate. A large anisotropy can be detected by following the line shape evolution of the RAS spectrum; in addition, the signal variation at a fixed wavelength is used to monitor the film growth. The signal intensity scales with the deposited thickness, demonstrating a very high sensitivity of RAS to less than 1/50 of a monolayer. Evidence of the advantages of RAS to monitor in real time the growth of molecular films and to probe in situ their properties is therefore obtained. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Qn Polymers; organic compounds

Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

X. H. Zheng, D. S. Jiang, S. Johnson, and Y. H. Zhang

Appl. Phys. Lett. 83, 4149 (2003); http://dx.doi.org/10.1063/1.1628395 (3 pages) | Cited 6 times

Online Publication Date: 12 November 2003

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The structural and optical properties of GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs grown on a GaAs substrate by molecular beam epitaxy are investigated using high-resolution x-ray diffraction and photoluminescence (PL) measurements. We demonstrated that the insertion of tensile GaAsP layers into the active region of GaAsSb/GaAs QWs effectively improves the structural and optical quality. Even the Sb composition is as high as 0.39. The PL spectra at 11 K and room temperature indicate that the PL peak of strain-compensated QWs has a narrower linewidth and higher intensity in comparison to the sample without strain compensation. The results of PL peak blueshift with increasing excitation show the strain-compensated GaAsSb/GaAs interface characteristic of type-I band alignment. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
78.67.De Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

Long-wavelength emission from nitridized InAs quantum dots

Takashi Kita, Yoshitaka Masuda, Takayoshi Mori, and Osamu Wada

Appl. Phys. Lett. 83, 4152 (2003); http://dx.doi.org/10.1063/1.1627943 (2 pages) | Cited 7 times

Online Publication Date: 12 November 2003

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A technique to grow InAs quantum dots (QDs) to extend the emission wavelength into 1.3 μm range has been developed. We performed nitridation after growing InAs QDs by molecular-beam epitaxy. During nitridation, the reflection high-energy electron diffraction keeps chevron patterns, as well as streak rods, coming from the wetting layer. A longer-wavelength emission line with a narrower spectral linewidth compared with those of InAs QDs has been observed. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.30.Fs III-V and II-VI semiconductors
73.21.La Quantum dots
42.55.Px Semiconductor lasers; laser diodes
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
81.07.Ta Quantum dots

Localization of intrinsic defects in CaF2–BaF2 superlattices

Ricardo Kagimura, H. Chacham, T. M. Schmidt, and R. H. Miwa

Appl. Phys. Lett. 83, 4154 (2003); http://dx.doi.org/10.1063/1.1627473 (3 pages)

Online Publication Date: 12 November 2003

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We perform first-principles calculations for the formation energies of fluorine self-interstitials (Fi−) and fluorine vacancies (VF+) in CaF2–BaF2 superlattices and in the corresponding bulk compounds. In dislocation-free (strained-layer) superlattices, the calculations show that both the Fi− and the VF+ defects are energetically more stable in the CaF2 layers than in the BaF2 layers. If the misfit stress in the superlattices is released (by dislocations, for instance), our results indicate that charge transfer between layers becomes energetically favorable with Fi− in the CaF2 layers and VF+ in the BaF2 layers. This is consistent with recent experiments. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
61.72.J- Point defects and defect clusters

Time-resolved photoluminescence of the size-controlled ZnO nanorods

Sangsu Hong, Taiha Joo, Won Il Park, Yong Ho Jun, and Gyu-Chul Yi

Appl. Phys. Lett. 83, 4157 (2003); http://dx.doi.org/10.1063/1.1627472 (3 pages) | Cited 46 times

Online Publication Date: 12 November 2003

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Size dependence of the time-resolved photoluminescence (TRPL) has been investigated for the ZnO nanorods fabricated by catalyst-free metalorganic chemical vapor deposition. The nanorods have a diameter of 35 nm and lengths in the range of 150 nm to 1.1 μm. The TRPL decay rate decreases monotonically as the length of the nanorods increases in the range of 150 to 600 nm. Decrease of the radiative decay rate of the exciton-polariton has been invoked to account for the results. © 2003 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.47.-p Spectroscopy of solid state dynamics
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Defect-mediated and resonant optical excitation of Er3+ ions in silicon-rich silicon oxide

D. Kuritsyn, A. Kozanecki, H. Przybylińska, and W. Jantsch

Appl. Phys. Lett. 83, 4160 (2003); http://dx.doi.org/10.1063/1.1627483 (3 pages) | Cited 11 times

Online Publication Date: 12 November 2003

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Sensitization of the 4I13/2–4I15/2 Er3+ luminescence at 1.54 μm in silicon-rich silicon oxide (SRSO) is studied in the blue-green range. We show that defects due to excess Si in silica act as luminescence sensitizers. We also suggest that there exist two types of Er centers—isolated ones and others—strongly coupled to defects. In SRSO competition of direct, resonant excitation of Er3+ and indirect processes via defects is observed. Enhancement of the Er emission for off-resonant excitation does not seem to compensate losses in the direct channel of excitation to the 2H11/2 state of Er3+. We suggest that the emission efficiency of Er3+ is limited by distance-dependent transfer rate and little spectral overlap of the interacting states. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials

Mapping of strain fields about thin film structures using x-ray microdiffraction

C. E. Murray, I. C. Noyan, P. M. Mooney, B. Lai, and Z. Cai

Appl. Phys. Lett. 83, 4163 (2003); http://dx.doi.org/10.1063/1.1628399 (3 pages) | Cited 6 times

Online Publication Date: 12 November 2003

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Substrate distortions were mapped near pseudomorphically grown SiGe thin film etched lines of various widths from 1.5 to 20 μm on Si(001) and 190 μm diameter Ni dots on Si(111) using reflection x-ray microdiffraction topography. The strain field extended 30–120 times the thickness of the film away from the feature edge. The profile of the enhanced diffracted intensity was found to follow a characteristic curve when the distance from the feature edge is normalized by a mean interaction distance that depends on the feature size. This normalization and the observed strain decay profiles cannot be predicted or modeled using existing micromechanical models. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.65.Cf Surface cleaning, etching, patterning
68.37.Yz X-ray microscopy

Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

Maria Aboy, Lourdes Pelaz, Luis A. Marqués, Juan Barbolla, Ali Mokhberi, Yayoi Takamura, Peter B. Griffin, and James D. Plummer

Appl. Phys. Lett. 83, 4166 (2003); http://dx.doi.org/10.1063/1.1628391 (3 pages) | Cited 19 times

Online Publication Date: 12 November 2003

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We use kinetic nonlattice Monte Carlo atomistic simulations to investigate the physical mechanisms for boron cluster formation and dissolution at very high B concentrations, and the role of Si interstitials in these processes. For this purpose, high-dose, low-energy B implants and theoretical structures with fully active box shaped B profiles were analyzed. Along with the theoretical B profile, different Si interstitial profiles were included. These structures could be simplifications of the situation resulting from the regrowth of preamorphized or laser annealed B implants. While for B concentrations lower than 1020 cm−3, B clusters are not formed unless a high Si interstitial concentration overlaps the B profile, our simulation results show that for higher B concentrations, B clusters can be formed even in the presence of only the equilibrium Si interstitial concentration. The existence of a residual concentration of Si interstitials along with the B boxes makes the deactivation faster and more severe. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

Chung Foong Tan, Eng Fong Chor, Jinping Liu, Hyeokjae Lee, Elgin Quek, and Lap Chan

Appl. Phys. Lett. 83, 4169 (2003); http://dx.doi.org/10.1063/1.1628814 (3 pages) | Cited 5 times

Online Publication Date: 12 November 2003

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It has been demonstrated that, by incorporating a thin ∼20 nm Si1−yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si1−yCy layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1×1014 cm−2 at 115 keV followed by spike annealing at 1050 °C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si1−yCy layer. © 2003 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.up Other materials
66.30.Lw Diffusion of other defects
61.72.S- Impurities in crystals

Spatial distribution of yellow luminescence related deep levels in GaN

J. W. P. Hsu, F. F. Schrey, and H. M. Ng

Appl. Phys. Lett. 83, 4172 (2003); http://dx.doi.org/10.1063/1.1628398 (3 pages) | Cited 7 times

Online Publication Date: 12 November 2003

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Using two-photon excitation, we study the excitation power density dependence and spatial variation of photoluminescence (PL) in GaN films grown by molecular beam epitaxy. Under our experimental conditions, the excitation power density dependence is quadratic for near band-gap emission (NBE) and linear for yellow luminescence (YL), consistent with the YL process being saturated. The PL mapping reveals NBE fluctuations at the domain-size scale while YL is uniform. These results provide strong evidence that the spatial distribution of deep levels associated with YL is uniform; hence, YL is unrelated to dislocations. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors

Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer

Heiji Watanabe

Appl. Phys. Lett. 83, 4175 (2003); http://dx.doi.org/10.1063/1.1629146 (3 pages) | Cited 13 times

Online Publication Date: 12 November 2003

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We investigated reactions at ZrO2/Si interfaces by means of interface oxidation and atomic-scale roughness caused by postoxidation annealing. When fabricating ZrO2 by in situ reoxidation of a thin Zr metal layer, the interface oxidation that results in Zr–silicate formation accelerates, when the initial Zr layer becomes thicker. This implies that interface oxidation is not dominated by oxidant diffusion through the high-k film, but is accelerated by catalytic effects that occurs within the metal oxide. We also found that, in contrast with a SiO2/Si interface, roughness at the high-k/Si interface monotonously increases with the growth of the interface silicate layers. These results demonstrate the importance of postannealing conditions on high-k gate dielectrics. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing
68.35.Ct Interface structure and roughness
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