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24 Nov 2003

Volume 83, Issue 21, pp. 4279-4450

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages)

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee
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Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors

Shuang Meng, C. Basceri, B. W. Busch, G. Derderian, and G. Sandhu

Appl. Phys. Lett. 83, 4429 (2003); http://dx.doi.org/10.1063/1.1629373 (3 pages) | Cited 10 times

Online Publication Date: 18 November 2003

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We characterized thin Al2O3 dielectrics with TiN electrodes in a three-dimensional, high-aspect-ratio, metal–insulator–metal capacitor structure. Transmission electron microscopy images did not reveal any interfacial layer(s) or intermixing of the films. This was confirmed by series capacitance analysis. Extensive electrical characterization indicated a well-behaved dielectric response. Time and frequency domain measurements did not show any significant dielectric relaxation. Charge transport was controlled by a direct tunneling mechanism in the field range of 1.5 to 6 MV/cm for a 50 Å film. The Fowler–Nordheim tunneling mechanism dominated the high field range (>6 MV/cm for a 50 Å film), and the leakage currents became independent of dielectric thickness. The electron tunneling effective mass was found to be 0.2 me. © 2003 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling

Characterization of ultrathin dopant segregation layers in nanoscale metal–oxide–semiconductor field effect transistors using scanning transmission electron microscopy

T. Topuria, N. D. Browning, and Z. Ma

Appl. Phys. Lett. 83, 4432 (2003); http://dx.doi.org/10.1063/1.1626001 (3 pages) | Cited 4 times

Online Publication Date: 18 November 2003

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Silicide/Si source/drain interfaces (Co–silicide and Ti–silicide) in nanoscale metal–oxide–semiconductor field effect transistors (MOSFETs) were investigated using scanning transmission electron microscopy and electron energy loss spectroscopy. Z-contrast images of the N-type doped device show substitutional arsenic segregation on Si lattice sites with a very narrow profile precisely at the Co–silicide/Si interfaces. A detailed comparative electron energy loss study of As-doped and undoped devices reveals that arsenic remains electrically active and supplies additional charge carriers at the interface. These characteristics are desirable for optimum device performance with minimum contact resistance. A similar effect is also observed in MOSFETs with a Ti-silicided source/drain. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.35.Dv Composition, segregation; defects and impurities
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.37.Lp Transmission electron microscopy (TEM)
79.20.Uv Electron energy loss spectroscopy

Reversible shift of the transition temperature of manganites in planar field-effect devices patterned by atomic force microscope

I. Pallecchi, L. Pellegrino, E. Bellingeri, A. S. Siri, and D. Marré

Appl. Phys. Lett. 83, 4435 (2003); http://dx.doi.org/10.1063/1.1629399 (3 pages) | Cited 12 times

Online Publication Date: 18 November 2003

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A planar side-gate device for field effect with a La0.67Ba0.33MnO3 channel on a SrTiO3 substrate is fabricated by means of the voltage-biased tip of an atomic force microscope. The peculiar geometry and the high dielectric permittivity of the substrate enhance the channel resistance modulation up to 20% at low temperature by a gate voltage of ±40 V. Moreover, a reversible shift by 1.3 K of the metal–insulator transition temperature (TMI) by field effect is observed. The signs of the changes of resistance and TMI both depend on the sign of the gate voltage, as expected for pure field effect; in particular, the TMI is raised (lowered) by accumulating (depleting) holes in the channel. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
72.60.+g Mixed conductivity and conductivity transitions
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