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24 Nov 2003

Volume 83, Issue 21, pp. 4279-4450

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages)

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee
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Anomalous electro-optic effect in Sr0.6Ba0.4Nb2O6 single crystals and its application in two-dimensional laser scanning

L. Tian, D. A. Scrymgeour, Alok Sharan, and Venkatraman Gopalan

Appl. Phys. Lett. 83, 4375 (2003); http://dx.doi.org/10.1063/1.1627475 (3 pages) | Cited 8 times

Online Publication Date: 18 November 2003

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We report an anomalous electro-optic effect that results in laser scanning along the polarization direction of strontium barium niobate (Sr0.6Ba0.4Nb2O6, or SBN:60) single crystals under external fields. The origin of such unusual phenomenon is believed to arise from inhomogeneous index gradients near the crystal surfaces, possibly arising from space-charge fields. Based on this effect, two-dimensional scanning is demonstrated by using a combination of SBN:60 single crystal (for vertical scanning; full scan angle of 0.79°±0.07°) and lithium tantalate (LiTaO3) (for horizontal scanning; full scan angle of 3.68°±0.14°). © 2003 American Institute of Physics.
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78.20.Jq Electro-optical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Jp Dielectric breakdown and space-charge effects

Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films

S. T. Zhang, X. J. Zhang, H. W. Cheng, Y. F. Chen, Z. G. Liu, N. B. Ming, X. B. Hu, and J. Y. Wang

Appl. Phys. Lett. 83, 4378 (2003); http://dx.doi.org/10.1063/1.1629372 (3 pages) | Cited 36 times

Online Publication Date: 18 November 2003

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High-quality c-axis epitaxial ferroelectric thin films of Bi4Ti3O12 (BTO) and Nd-substituted BTO, Bi3.15Nd0.85Ti3O12 (BNT), were prepared on (001)-LaNiO3-coated (001) LaAlO3 substrates by pulsed-laser deposition. The epitaxial alignments were established by the x-ray diffraction, including θ–2θ and ϕ scans. Compared to the BTO films, the BNT films have significantly improved electrical properties with about 2 times larger remanent polarization, 0.6 times lower coercive field, better fatigue-resisting characteristics, and 1.7 times larger dielectric constant. These results showed experimentally that Nd substitution could enhance the c-axis electrical properties of BTO. The reason for the improved properties of BNT films was discussed. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Thickness dependence of leakage currents in high-permittivity thin films

Herbert Schroeder and Sam Schmitz

Appl. Phys. Lett. 83, 4381 (2003); http://dx.doi.org/10.1063/1.1629141 (3 pages) | Cited 11 times

Online Publication Date: 18 November 2003

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The leakage current through high-permittivity perovskite thin films in the nanometer range is of great technological interest because of the possible applications of these insulating films in future submicroelectronic devices such as dielectrics in Gbit dynamic random access memories or gate oxides in metal–oxide–semiconductor field-effect transistors. The experimental result of decreasing leakage current with decreasing thickness of the dielectric for the same externally applied field can be described by using a model combining thermionic emission at the electrode/dielectric interface and a low-mobility, high-permittivity dielectric with low-permittivity layers at the interfaces, the so-called dead layers. © 2003 American Institute of Physics.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ch Permittivity (dielectric function)
85.30.Tv Field effect devices

Phase transition in relaxor ferroelectrics studied by mechanical measurements

Feng Yan, Peng Bao, and Yening Wang

Appl. Phys. Lett. 83, 4384 (2003); http://dx.doi.org/10.1063/1.1629383 (3 pages) | Cited 8 times

Online Publication Date: 18 November 2003

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We report the mechanical properties of [(1−x)%]Pb(Mg1/3Nb2/3)O3−x%PbTiO3 ceramics with PbTiO3 content changed from 23% to 0% measured at the vibration frequency of about 1 kHz. Two modulus kinks can be observed in any of the samples. The kink appears at higher temperature can be attributed to the stress-induced relaxation of nanodomains. Another modulus kink at a lower temperature appears near the Vogel–Fulcher freezing temperature. An associated internal friction peak can also be observed at this temperature. This kink and the internal friction peak can be explained to be due to a ferroelectric phase transition, which becomes weaker with the decrease of PbTiO3 content. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering

Woo Young Park, Kun Ho Ahn, and Cheol Seong Hwang

Appl. Phys. Lett. 83, 4387 (2003); http://dx.doi.org/10.1063/1.1629790 (3 pages) | Cited 24 times

Online Publication Date: 18 November 2003

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This study investigated the structural and electrical properties of (Ba,Sr)TiO3 (BST) thin film capacitors with thicknesses ranging from 18 to 215 nm, which were prepared by on- and off-axis rf magnetron sputtering technique on Pt/SiO2/Si substrates. The deposition rate and cation composition ratios of the films were controlled to be the same regardless of the sputtering geometry. All the films show elongations in the out-of-plane lattice spacing, suggesting the presence of compressive stress with a smaller value by on-axis sputtering than by the off-axis system. There was no thickness dependence of the strain in the polycrystalline BST films. The BST films deposited using the on-axis system showed a higher bulk dielectric constant with a higher interfacial capacitance and a lower leakage current level than the films produced by the off-axis system. The strain effect was proposed to explain the correlations between the structural and electrical properties. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
81.15.Cd Deposition by sputtering
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds

Evidence of short-range antiferroelectric local states in lanthanum- and titanium-modified Sr0.3Ba0.7Nb2O6 ferroelectric ceramics

H. Amorín, J. Pérez, A. Fundora, J. Portelles, F. Guerrero, M. R. Soares, E. Martínez, and J. M. Siqueiros

Appl. Phys. Lett. 83, 4390 (2003); http://dx.doi.org/10.1063/1.1629377 (3 pages) | Cited 2 times

Online Publication Date: 18 November 2003

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Structural and electrical measurements were performed on lanthanum- and titanium-modified Sr0.3Ba0.7Nb2O6 ferroelectric (FE) ceramics. Dielectric properties show a well-defined relaxor anomaly around −50 °C with double-loop hysteresis curves from this point to the transition temperature. The thesis of short-range antiferroelectric (AFE) local states having incommensurate (INC) structure embedded in the FE polar matrix is proposed to explain the observed behavior. Structural lattice parameters show negative expansion coefficients and INC superlattice diffraction spots were observed through the selected-area diffraction patterns in the [110] zone for this minority local states. The titanium modification of this system seems to be the key fact in the coupling of the INC structure to the AFE local states in the FE–AFE coexistence region. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
61.66.Fn Inorganic compounds
64.70.Rh Commensurate-incommensurate transitions
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Crystal structure and polarization phenomena of epitaxially grown Pb(Zr,Ti)O3 thin-film capacitors

M. Tsukada, H. Yamawaki, and M. Kondo

Appl. Phys. Lett. 83, 4393 (2003); http://dx.doi.org/10.1063/1.1630371 (3 pages) | Cited 9 times

Online Publication Date: 18 November 2003

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{100} oriented Pb(Zr,Ti)O3 (PZT) thin films were deposited by metalorganic chemical vapor deposition on both Ir/MgO(100) and Ir/MgAl2O4/SiO2/Si(100) substrates. The x-ray Φ-scan spectra for the (202) reflections revealed each film had fourfold symmetry, which was epitaxially grown as cube-on-cube. The switchable polarization (Qsw) of the PZT capacitor on the MgO substrate attained 100 μC/cm2 at 1.8 V; however, PZT capacitors on Si had a Qsw of 23 μC/cm2. This difference in Qsw is attributed to the volume fraction of (001) orientation of each PZT film. The difference in orientation between the two kinds of PZT films does not seem to depend on misfit of lattice parameters between PZT and Ir, but on the stress caused by the difference in the thermal expansion coefficients of MgO and Si. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Temperature dependence of the electrical and electromechanical properties of lead zirconate titanate thin films

Hiroshi Maiwa, Seung-Hyun Kim, and Noboru Ichinose

Appl. Phys. Lett. 83, 4396 (2003); http://dx.doi.org/10.1063/1.1629786 (3 pages) | Cited 14 times

Online Publication Date: 18 November 2003

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The temperature dependence of the electrical and electromechanical properties of Pb(Zr,Ti)O3 (PZT) (Zr/Ti=30/70, 52/48, and 70/30) thin films are investigated. The 1-μm-thick PZT thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by chemical solution deposition. The temperature dependence of the dielectric and ferroelectric properties of the films were measured in the temperature range from −250 to 150 °C. The temperature-dependent strain loops from PZT films were measured using scanning probe microscopy in the temperature range from −100 to 150 °C. The field-induced displacement increased with increase of the temperature; however, their temperature dependence was relatively small, compared with that reported for bulk PZT ceramics. The results indicate that a thermally activated extrinsic ferroelastic contribution is not predominant in thin PZT films. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.60.Bs Mechanical and acoustical properties
77.22.Ch Permittivity (dielectric function)
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